BaFCl:Eu2+中F色心的浓度和光激励截面与温度和紫外线的辐照波长的关系

本文研究了BaFCl:Eu²⁺在不同波长的紫外线辐照和不同的测定温度下的光激励发光性质.通过改变激励方式及激励光的扫描方向,给出了BaFCl:Eu²⁺光激励发光过程中,两种F色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系.同时我们还研究了在激励读出过程中,对应两种F色心的光激励发光强度与激励温度的关系,并且给出了相应于F(Cl^-)心的热激活能.     

BaFCl∶Eu~（2＋）中F色心的浓度和光激励截面与温度和紫外线的辐照波长的关系

本文研究了ＢａＦＣｌ∶ＥＵ（２＋）在不同波长的紫外线辐照和不同的测定温度下的光激励发光性质．通过改变激励方式及激励光的扫描方向，给出了ＢａＦＣｌ∶Ｅｕ（２＋）光激励发光过程中，两种Ｆ色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系．同时我们还研究了在激励读出过程中，对应两种Ｆ色心的光激励发光强度与激励温度的关系，并且给出了相应于Ｆ（Ｃｌ－）心的热激活能．     

紫外光辐照镍系聚丁二烯的NMR研究

用¹H NMR谱,¹³C NMR谱,二维谱,X-射线衍射等方法研究了镍系高顺式聚丁二烯橡胶(NiBR) 在强紫外（UV）光辐照前后的微观结构变化和分子运动情况. 分析表明NiBR样品随着UV光辐照时间的增加,侧链乙烯基端基双键比主链端基双键更易发生氧化反应;并且随着NiBR样品的各基团的半峰宽值逐渐增加,表明NiBR在UV辐照过程中发生了部分交联反应. 样品的X-射线衍射谱图中结晶峰强度随UV光辐照时间的增加逐渐降低,表明样品的晶形无序程度增加了. 自旋-晶格弛豫时间（T₁）和自旋-自旋弛豫时间（T₂）值给出了有关NiBR辐照前后分子运动变化的信息.      

BuFCl:Eu2+中两种F色心的浓度比值与光激励截面比值的测定方法

本文研究了紫外线辐照下BaFCl:Eu2+的光激励发光性质.通过改变激励方式及激励光的扫描方向,给出了BaFCl:Eu2+光激励发光过程中,两种F色心的浓度比值和光激励截面比值的测定方法.     

K3Ba3C60在不同温度下的Raman光谱研究

研究了K₃Ba₃C₆₀在不同温度下的Raman光谱.发现Raman光谱随温度的变化发生有规律的变化.随着温度的降低,所有模的线宽和强度的变化情况与纯的C₆₀的情况明显不同.径向Ag(2)模的频率在20K到室温之间有一个反常大的向高频漂移(9cm^-1),这表明在C₆₀分子和掺杂离子之间存在着轨道杂化.另外Raman光谱中Ag(1)模两个分量的相对强度随着温度的降低发生有规律的变化. 关键词： 高频漂移 轨道杂化     

掺Bi石英光纤的γ射线辐照和温度影响特性

采用改进的化学气相沉积法制备了尺寸为10/130 μm的掺Bi单包层石英光纤, 把光纤分成若干组之后置于不同剂量的⁶⁰Co γ辐射源下辐照, 测试了光纤在辐照前后的吸收谱和荧光谱, 并测试了光纤在全温度范围(-40–70 ℃)下荧光强度的变化. 实验结果表明, 辐照后700, 800 nm处的吸收峰显著增强, 这是由于辐照导致更多Bi 近红外活性中心的生成. 976 nm光抽运不同剂量辐照后的光纤, 中心位于1230 nm的荧光谱没有明显变化, 验证了掺Bi石英光纤用于太空及辐照环境下光通信的可能性. 在全温度范围内, 分析了荧光强度的变化规律, 为今后掺Bi光纤激光器的稳定工作提供了数据基础.     

γ射线及质子辐照导致CCD光谱响应退化的机制

光谱响应是表征CCD性能的重要参数。为了研究辐射环境对CCD光谱响应产生影响的规律及物理机制,开展了不同粒子辐照实验,对CCD光谱响应曲线的退化形式及典型波长下CCD光响应的退化情况进行了分析。辐射效应对CCD光谱响应的影响可以分为电离总剂量效应和位移效应导致的退化,本文从这两种辐射效应出发,采用⁶⁰Co-γ射线及质子两种辐照条件,研究了CCD光谱响应的退化规律。针对460 nm（蓝光）和700 nm（红光）等典型CCD光响应波长,从辐射效应导致的损伤缺陷方面分析了CCD光谱响应退化的物理机制。研究发现,在⁶⁰Co-γ射线辐照时CCD光谱响应曲线变化是由于暗信号增加导致的,而质子辐照导致CCD对700 nm波长的光响应退化明显大于460 nm波长的光响应,且10 MeV质子导致的损伤比3 MeV质子更明显,表明位移损伤缺陷易导致CCD光谱响应退化。结果表明,电离总剂量效应主要导致CCD光谱响应整体变化,而位移效应则导致不同波长光的响应差异增大。     

氯化聚乙烯辐射效应的NMR研究

用¹H NMR,¹³C NMR谱,二维谱,FT-IR等方法研究了氯化聚乙烯（CPE）在室温下限量空气中经⁶⁰Co γ射线辐照后的辐照效应. 结果表明CPE在辐照过程中以发生裂解反应为主,在裂解反应过程中伴随着HCl脱出,HCl的脱出量随着辐照剂量的增加而增加. 辐照后CPE样品的大分子结构发生相应变化,序列结构为CH₂CHClCHClCH₂CHCl,CH₂CH₂CHClCH₂CH₂,CHClCH₂CHClCH₂CH₂,CHClCH₂CHClCH₂CHCl的单元数量减少,但没有形成新的序列结构类型,T₁ 和T₂值给出了有关辐照前后分子运动变化的信息.     

BuFCl：Eu~（2＋）中两种F色心的浓度比值与光激励截面比值的测定方法

本文研究了紫外线辐照下ＢａＦＣｌ：Ｅｕ２＋的光激励发光性质．通过改变激励方式及激励光的扫描方向，给出了ＢａＦＣｌ：Ｅｕ２＋光激励发光过程中，两种Ｆ色心的浓度比值和光激励截面比值的测定方法．     

丙烯酰胺-甲基丙烯酸共聚物结构的NMR研究

用¹H NMR谱,¹³C NMR谱,DEPT谱,gHMQC,gHMBC二维谱和质子弛豫时间等方法研究了在紫外光辐照条件下丙烯酰胺(AM) -甲基丙烯酸(MAA)共聚合反应,讨论了AM-MAA共聚合反应时间与转化率的关系、共聚单体的连接方式、共聚物序列结构以及不同辐照时间下形成的共聚物链运动. 结果表明在紫外光辐照条件下,AM-MAA共聚物链节中同时存在多种连接方式,当反应时间为45 min时,共聚合转化率可达100%. 从自旋-晶格弛豫时间（T₁）和自旋-自旋弛豫时间（T₂）测定中得出,在辐照1小时范围内,时间越长聚合物长链分子运动速度越快,但主链的链段运动变化不明显.     

Photostimulated luminescence of corrugated fiberboard as an additional screening method for detecting radiated foods

In this study, PSL of non-irradiated and irradiated corrugated fiberboards (CFs) was investigated to evaluate the possibility that CFs can be used as alternative specimens for the screening detection method of food irradiation. The irradiation at a dose of only 0.15 kGy increased PSL signals of the CF over 1 order of magnitude. The PSL signals increased with increasing in gamma irradiation dose and became almost saturated at a dose of 5 kGy. The core of CFs showed PSL signals sufficient for distinguishing irradiated from non-irradiated at least 6 months after irradiation even though the CF was exposed to light and the environmental temperature increased to 50 °C. These results suggest that the PSL property of the core of CFs is useful for detecting irradiation. However, the large variation of PSL signals among CFs made it difficult to set a well-defined “positive” threshold limit to distinguish irradiated from non-irradiated completely. All of the non-irradiated CFs showed PSL signals above 10³ counts, which is much higher than that detected for foods. It is apparent that the threshold limit of EN 13751 is not applicable to detecting irradiated CFs. More detailed collaborative research with large number of samples is needed to establish new threshold limits involving “intermediate” classification.     

Photo- and thermo-stimulated luminescence of CsI—Tl crystal after UV light irradiation at 80 K

Abstract

Thermo- and photo-stimulated luminescence are studied for CsI—Tl crystal after the irradiation with the UV light at 80 K. Creation spectrum of the photostimulated luminescence coincides with the D absorption band of Tl⁺ ions. Nature of the defects created by UV light at low temperatures is discussed basing on the correspondence between the thermostimulated glow curve peaks and thermal evolution of the photostimulation spectra observed after irradiation in the D absorption band. Three bands at 1400, 950 and 580 nm have been observed in the stimulation spectrum at 80 K. The 1400 and 950 nm stimulation bands are presumably explained as the optical transitions in the Tl⁰ centre forming the spatially correlated defect pair with V_k centre while the 580 nm stimulation band is connected with the unperturbed Tl⁰ centres. It is concluded that the Tl⁺ luminescence at low temperature is connected with the electron recombination with the Tl²⁺ centre.     

Mechanism of photostimulated luminescence: BaFCl:Eu2+

We propose a new parallel model based on the analysis of photostimulated luminescence (PSL) process and existing theoretical models. While solving this model, the general expression for PSL is gained. BaFCl:Eu²⁺, one of the PSL materials, is prepared and a series of spectra are measured. We compared the theoretical and experimental results in terms of the decay process, the difference between two kinds of color centers and the relationship between irradiation dose and luminescent intensity. Supported by the National Nature Science Foundation of China.     

Luminescence studies of thallium co-doped KBr:Eu2+ powder phosphors

In this study, photoluminescence (PL) and photostimulated luminescence (PSL) properties in KBr:Eu²⁺, Tl⁺ powder phosphors are reported. PL emission spectra of these Tl⁺ co-doped KBr:Eu²⁺ phosphors show four overlapping bands around 310, 325, 360 and 375 nm in addition to the characteristic of Eu²⁺ ions at 420 nm. These additional short wavelength bands were attributed to centres involving Tl⁺ ions. The decrease in PSL intensity of γ-irradiated KBr:Eu²⁺, Tl⁺ powder phosphors with Tl⁺ concentration and the absence of thallium emission bands in PSL were attributed to the efficient electron trapping by Tl⁺ ions during irradiation.     

Crystal-Size Dependence of Replenishment Effect in BaFBr:Eu

Excitation spectra of photo-stimulated luminescence (PSL) in BaFBr:Eu and BaFBr:Eu ? Na crystals were studied. Replenishment of PSL at liquid helium temperature was investigated in crystals of various sizes including a commercially available X-ray storage phosphor plate (Image Plate). Although a weak replenishment effect was observed in the fine powder crystals, no replenishment effects were observed in Image Plate, while it showed strong PSL at liquid helium temperature. Results indicate that there are two types of PSL centers, one consists of spatially correlated electrons and holes and the other consists of electrons and holes trapped at isolated centers. Lack of the replenishment effect in Image Plate indicates that trapped electrons are stabilized by the surface and need thermal activation to recombine with holes which are possibly trapped at doped Eu^2?.     

Photostimulated luminescence properties of BaFBr:Eu under ion irradiation

The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 10¹² ions/cm², and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons.     

The role of hydrogen- and hydroxyl-doping in CsBr:Eu

Hydrogen- and hydroxyl-doped CsBr:Eu²⁺ storage phosphors were investigated by photostimulated luminescence (PSL) spectra, absorption spectra and PSL lifetime spectra. Hydrogen- and hydroxyl-doping plays an active role related to the trap centers in CsBr:Eu²⁺ storage phosphors. A sharp increase in the PSL yield was observed for non-hydroxyl-doped CsBr:Eu²⁺ annealed in 5%H₂+95%Ar atmosphere. For hydroxyl-doped CsBr:Eu²⁺, the PSL lifetime (361 ns) is obviously shorter than that of typical CsBr:Eu²⁺ storage phosphors.     

Effect of halide ion concentration and irradiation dose dependent photostimulated luminescence investigation in the image screen phosphor CsBr1-xClx:Euy 2+

Photoluminescence(PL) characterization is carried out on CsBr_1-xCl_x:Eu_y²⁺ (x = 0.05, 0.1, 0.2, 0.3 y = 100 ppm, 200 ppm) crystals grown in vacuum with the Bridgman technique. PL studies show an increase in luminescence intensity with a decrease in bromide ion content. F(Br^–) and F(Cl^–) centers are formed due to -ray irradiation at room temperature. Photostimulated luminescence (PSL) emission is found to increase with an increase in irradiation dose from 7.5 Gy to 30 Gy at room temperature. From the results it is demonstrated that out of the different compositions studied, CsBr_0.9Cl_0.1:Eu²⁺ (200 ppm) phosphor has a linear PSL response with respect to irradiation dose.