Effects of oblique-incidence evaporation on magnetic properties of Fe20Ni80/Fe70Co30 bilayer film

Evaporative deposition at oblique incidence is shown to enhance the magnetic anisotropy of an Fe₂₀Ni₈₀ magnetic film and induce magnetic anisotropy in an overlying, strongly isotropic Fe₇₀Co₃₀ film. This deposition method for the formation of an underlayer of several lattice parameters in thickness and semi-hard overlayer of a few thousands Angstroms in thickness achieves a significant change in the magnetization process and strong suppression of the coercive forces of Fe₇₀Co₃₀ in the hard magnetization direction. Soft magnetization of the Fe₇₀Co₃₀ overlayer is not achieved when one of the layers is deposited at oblique incidence. It is anticipated that shape magnetic anisotropy is responsible in part for the magnetic anisotropy induced in both in Fe₂₀Ni₈₀ under- and Fe₇₀Co₃₀ overlayer by oblique incidence evaporation.     

利用氘粒子活化分析测定高温超导体中的氧含量

详细介绍测量高温超导体含氧量的实验方法。测定了YBa₂Cu₃O_y和Bi₂Sr₂CaCuO_y两类超导体内氧的含量。发现在YBa₂Cu_3(1-X)O_y和Bi_2(1-x)Sr₂CaCu₂O_y中随着Cu缺位的增大,氧的变化趋势。用X     

Optical properties of new photovoltaic materials: AgCuO2 and Ag2Cu2O3

AgCuO₂ and Ag₂Cu₂O₃ are new types of semiconductor materials. A theoretical study is presented for both the electronic and optical properties of these new photovoltaic materials in the framework of density functional theory (DFT). The calculated cohesive energy is −3.606 eV/atom and −3.723 eV/atom for Ag₂Cu₂O₃ and AgCuO₂, respectively. Electronic calculations indicate that AgCuO₂ is a small band gap semiconductor and Ag₂Cu₂O₃ is metallic in nature. The valency state of Cu is divalent in Ag₂Cu₂O₃ and trivalent in AgCuO₂. The largest absorption coefficient of CuO₂ is 332 244, which is significantly greater than that of CuInSe₂, CdTe, GaAs, etc.     

Simultaneous formation of contacts and diffusion barriers for VLSI by rapid thermal silicidation of TiW

The formation of (Ti_xW_1–x)Si₂/(Ti_xW_1–x)N, by rapid thermal processing of Ti_xW_1–x on Si in an N₂ ambient is investigated. An activation energy of 1.7 eV is obtained for silicide formation. A distinct snow-ploughing of As atoms is observed during silicide formation whereas the interfacial B concentration decreases with increasing silicide formation temperature. The diffusion barrier properties of the (Ti_xW_1–x)Si₂/(Ti_xWi_1–x)N stack in contact with Al is investigated upon post-metal annealing. No interaction between the layers is found for temperatures as high as 475°C after 60 min. The improved thermal stability of the (Ti_xW_1–x)N layer in contact with Al is attributed to nitrogen blocking of the grain boundaries.     

Effect of absorbed hydrogen on magnetic behavior of Th7Co3 and Th7Ni3

The Pauli paramagnets Th₇Fe₃, Th₇Co₃ and Th₇Ni₃ become superconducting below 1.86 K, 1.83 K and 1.98 K, respectively. These compounds absorb large amounts of hydrogen to form the very hydrogen-rich phases Th₇Fe₃H₃₀, Th₇Co₃H₂₂ and Th₇Ni₃H₂₄. From magnetization studies it is found that hydrogenation results in an increase in the susceptibility of Th₇Co₃, and in a decrease in the susceptibility of Th₇Ni₃, but magnetic ordering is not observed in these two. This is in contrast to the behavior of Th₇Fe₃H₃₀ which is magnetically ordered with a Curie temperature above 350 K.     

锂离子外扩散对扩镁铌酸锂表层结晶特性的影响

利用常规X射线衍射和掠入射X射线衍射对在空气中进行镁离子内扩散的扩镁铌酸锂单晶表层的富氧化镁层特性进行了研究,揭示出镁离子内扩散初期随着体内锂离子的外扩散,首先在富氧化镁层形成Li₃Mg₂NbO₆和Mg₄Nb₂O₉的化合物结构,Li₃Mg₂NbO₆出现在富氧化镁的内表层,而Mg₄Nb关键词：     

Energy Levels in the Forbidden Band of the Bi4Ge3O12 Ceramics

Thermally stimulated luminescence in the Bi₄Ge₃O₁₂ ceramics and also in the ceramics of the parent components Bi₂O₃ and GeO₂ is investigated. The similarity of the curves of the thermally stimulated luminescence in bismuth germanate with the structure of eulytine Bi₄Ge₃O₁₂ and sillenite Bi₁₂GeO₂₀ is explained. The relation of the thermally stimulated luminescence band in Bi₄Ge₃O₁₂ (with a maximum at 143 K) to the disruptions in the germanium sublattice and of the thermally stimulated band (with a maximum at 187 K) to the recombination processes in the bismuth sublattice is shown. It has been established that the light sum in the Bi₄Ge₃O₁₂ ceramics is stored most effectively upon excitation by light in an energy region of 4.4 eV.     

Fe73.5Cu1Nb3B9Si13.5非晶态合金的激波纳米晶化研究

实验表明,非晶态合金在激波影响下会转变为纳米晶.最近的实验进一步发现,Fe_73.5Cu₁Nb₃B₉Si_13.5非晶态合金中的Cu,Nb在激波晶化中的细化作用被抑制,且样品在这种转变之后作进一步的退火处理,其晶粒度变大而晶格常数变小.在激波晶化机理分析中提出了“激波流体晶化”构想. 关键词：     

To the explanation of the “white” line in the X-ray <Emphasis Type="Italic">K</Emphasis>-absorption spectrum of sulfur in NaBiS<Subscript>2</Subscript>

The maximum in the K-absorption spectra of sulfur in LiBiS₂, NaBiS₂, and KBiS₂, which is located more than 12 eV above the absorption edge and is especially strong for NaBiS₂, cannot be explained within single-electron calculations. Apparently, it is not related to any ordering in the arrangement of alkali metal and bismuth atoms in the cation sublattice. A scheme is considered in which a Na₂S-Bi₂S₃ solid solution is formed with subsequent oxidation of Na₂S with the formation of sulfate Na₂SO₄ with sulfur in the valence state +6, as a result of which the absorption edge shifts by approximately 13 eV. Thus, the initial experimental spectrum is treated as a weighted sum of the K-absorption spectra of sulfur in NaBiS₂, Na₂S, Bi₂S₃, and Na₂SO₄.     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

AgxCu50-xZr50非晶态合金及其晶化

采用高频熔炼后的真空单辊急冷技术制备了Ag_xCu_50-xZr₅₀金属玻璃,发现在x<12的范围内都可得到完全的非晶态。测量了x=2,4,6和10的Ag_xCu_50-xZr₅₀金属玻璃的玻璃转变温度和晶化温度,并采用Kissinger方法测定了晶化激活能E_a。发现在金属玻璃Ag_xCu_50-xZr_{50关键词：}     

Magnetic field dependence of vortex activation energy: A comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measuring the resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe₂, MgB₂ and Bi₂Sr₂Ca₂Cu₃O₁₀ (BSCCO) superconductors. Thermally activated flux flow behaviour is seen in all the three systems and clearly identified in bulk MgB₂. While the activation energy at low fields for MgB₂ is comparable to Bi₂Sr₂Ca₂Cu₃O₁₀, its field dependence follows a parabolic behaviour unlike a power-law dependence seen in Bi₂Sr₂Ca₂Cu₃O₁₀. We analyse our results based on Kramer’s scaling for grain boundary pinning in MgB₂ and NbSe₂.      

Density functional study of low-lying isomers of SiO<Subscript>4</Subscript>, GeO<Subscript>4</Subscript> and CO<Subscript>4</Subscript>, and their relation to tetrahedral solid phases

In silica (SiO₂) and in most silicates, atomic associations exist with composition SiO₄ and a structure with four O atoms in tetrahedral coordination around the Si atom. A similar feature is observed in germania (GeO₂) and some solids containing Ge instead of Si, although the number of phases containing GeO₄ tetrahedra is smaller. In contrast, and in spite of the fact that C is in the same column of the periodic table as Si and Ge, CO₂ is a molecular solid, and crystalline and amorphous phases of CO₂ showing CO₄ tetrahedra are only obtained under extremely high pressures. We have investigated the relation between free SiO₄, GeO₄ and CO₄ clusters and the tetrahedral associations found in the solids mentioned above. The lowest energy structure of those three free clusters is planar, but they have near-tetrahedral and distorted-tetrahedral isomers. The promotion energy from the planar structure to the distorted tetrahedral is low in SiO₄, large in CO₄, and intermediate in GeO₄. This correlates with the facility to form tetrahedral associations in the solids.     

Low temperature thermoelectric power of LaB6, PrB6 and NdB6

We have measured the thermoelectric power of LaB₆, PrB₆ and NdB₆ in the temperature range 2–20K. PrB₆ and NdB₆ order antiferromagnetically at T_N = 6.99K and 7.74K respectively, whereas LaB₆ is non-magnetic. The thermoelectric power data have a negative maximum near 5.5K in all three hexaborides. This negative peak is thought to be mainly due to phonon drag in LaB₆. In PrB₆ and NdB₆ there is an additional contribution due to magnon drag. It is expected that the high temperature thermoelectric power is mainly due to an electron diffusion term and a contribution due to spin disorder scattering. The thermoelectric power and the resistivity have been compared in the vicinity of T_N. A qualitative similarity in the temperature derivatives of these two quantities has been found for PrB₆ and NdB₆ near T_N.     

Invariance of the Massless Field Equations under Changes of the Metric

It is shown that the Maxwell equations with sources, expressed in terms of the covariant tensor field F_ijand the current density four-vector Jⁱ, are invariant under the change of the metric g_ijby g_ij = g_ij+ l_il_jif l_iis a principal null direction of F_ijand that an analogous result holds in the case of the massless Klein-Gordon equation if l_iis null and orthogonal to the gradient of the field and in the case of the null dust equations if l_iis parallel to the dust four-velocity. An elementary proof of the following generalization of the Xanthopoulos theorem is also given: Let (g_ij, F_ij) be an exact solution of the Einstein-Maxwell equations and let l_ibe a principal null direction of F_ij, then (g_ij+ l_il_j, F_ij) is also an exact solution of the Einstein-Maxwell equations if and only if (l_il_j, 0) satisfies the Einstein-Maxwell equations linearized about the background solution (g_ij, F_ij). Furthermore, analogous theorems, where the source of the gravitational field is a massless Klein-Gordon field or null dust, are presented.     

Effect of ZnAl2O4 coating on the compressive behaviors of aluminum borate whiskers-reinforced aluminum composites at elevated temperatures

Aluminum borate whiskers (ABOw) with or without ZnAl₂O₄ coating reinforced pure aluminum composites (ABOw/Al, ABOw/ZnAl₂O₄/Al) were fabricated by squeeze casting. The effects of ZnAl₂O₄ coating on the compressive behaviors, microstructures, and matrix textures of the composites were investigated at different temperatures and strain rates. The results indicate that the maximum compressive flow stress of the composites almost linearly decreases with the increase in temperature. The maximum compressive flow stress of ABOw/ZnAl₂O₄/Al composite is higher than that of ABOw/Al composite at the same temperature when the strain rate is larger, however, it is reversed when the strain rate is smaller. It is more serious for the fracture of whiskers in ABOw/ZnAl₂O₄/Al composite than that in ABOw/Al composite at the high compressive strain rate. However, the average length of whiskers in ABOw/ZnAl₂O₄/Al composite is larger than that in ABOw/Al composite at the low compressive strain rate. The strong matrix texture in ABOw/ZnAl₂O₄/Al composite appears at the high compressive strain rate, however, it is observed in ABOw/Al composite at the low compressive strain rate.     

Analysis of the possible reasons for the suppression of superconductivity in the Y1−x PrxBa2Cu3Oy system on the basis of thermoelectric power data

The temperature dependence of the thermoelectric power in samples of Y_1−x Pr_xBa₂Cu₃O_y (x=0−0.6) is investigated. The principal parameters of the system of charge carriers are determined on the basis of an analysis of this dependence within a narrow-conduction-band model, and their variation with increasing praseodymium content is analyzed. It is found that an increase in x leads to a very weak increase in the electron filling and considerable broadening of the conduction band accompanied by strong localization of the charge carriers. It is concluded on the basis of a comparative analysis of the results obtained and data for the YBa₂Cu₃O_y system in the case of aliovalent substitutions in the barium and copper sites that the valence of praseodymium in Y_1−x Pr_xBa₂Cu₃O_y is very close to 3+. It is shown that there is a universal correlation between the effective width of the conduction band and the critical temperature following various cation substitutions in the Y-Ba-Cu-O system. It is concluded that the main reason for suppression of the superconducting properties of Y_1−x Pr_xBa₂Cu₃O_y is the strong modification of the band spectrum caused by praseodymium. Fiz. Tverd. Tela (St. Petersburg) 39, 1520–1525 (September 1997)     

磁泡石榴石外延膜磁参数漂移的起因和抑制方法

本文研究了磁泡石榴石外延膜磁参数漂移的起因和抑制方法。我们认为石榴石外延膜磁参数漂移的主要起因是过饱和熔体的非自发成核和长大,并利用熔体营养料的有效浓度R_eff=R₄-R_n-R_e予以解释。外延过程熔体营养料浓度的消耗是R_n+R_e,而且R_n比R_e对石榴石外延膜磁参数的影响大得多。在回温控制过程中R_n=0,其熔体是相对稳定的。衬底的搅拌可加速熔体的非自发成核和长大。 关键词：     

Geometric and electronic structures of B12C6N6 fullerene

An electron deficient fullerene B₁₂C₆N₆ is studied by using ab initio calculations. The structure is generated by replacing N with C in the B₁₂N₁₂ cage to ensure only B–C and B–N bonds are formed. All the possible isomers are optimized and the low energy structures are determined. C and N atoms in the low energy isomers are inclined to segregate and form B₂C₂ and B₂N₂ squares. Natural bond analysis shows that the atomic orbitals of B, C and N in this cage hybrid approximately in sp^2.3 and then form B–C and B–N bonds. The 2p orbitals perpendicular to the cage surface are partially occupied and the molecular orbitals formed by these orbitals are highly delocalized. The natural charge on N is about −1.17 in both B₁₂N₁₂ and B₁₂C₆N₆, and the charge on C is −0.72 to −0.60. The molecular orbital compositions show that the B–N bonds are the same in B₁₂N₁₂ and B₁₂C₆N₆, and the B–C bonds possess stronger covalent character. The HOMO of B₁₂C₆N₆ is formed by 2p of B and C, and the LUMO is formed by 2p of C. The energy gap of C₂₄, B₁₂N₁₂ and B₁₂C₆N₆ is 2.52, 6.84 and 3.22 eV, respectively.     

Li4SiO4-Li3VO4赝二元系和Li4GeO4-Li4SiO4-Li3VO4赝三元系中新的锂离子导体

本文在室温到300℃的温度范围内研究了Li₄SiO₄-Li₃VO₄和Li₄GeO₄-Li₄SiO₄-Li₃VO₄体系中的离子导电性,发现γ_II相固溶体Li_3+xV_1-xSi_xO₄是好的锂离子导体。所研究的成分中Li_3.3V_0.7Si_0.3O₄的离子电导率最高,室温下为1×10^-5Ω^-1·cm^-1,在42—192℃的电导激活能为0.36eV,电子电导率可以忽略,因而这是迄今所发现的最好的锂离子导体之一。粗略确定了Li₄GeO₄-Li₄SiO₄-Li₃VO₄三元系中电导率高的范围,发现在Li_3.5V_0.5Ge_0.5O₄中Si部分取代Ge可以使电导率进一步提高,Li_3.5V_0.5Ge_0.4Si_0.1O₄的室温电导率可达1.3×10^-5Ω^-1·cm^-1,电导激活能为0.40eV。 关键词：