共查询到20条相似文献,搜索用时 46 毫秒
1.
本文采用分数维方法, 在讨论Al0.3Ga0.7As衬底上GaAs薄膜的分数维基础上, 计算了GaAs薄膜中的极化子结合能和有效质量. 随着薄膜厚度的增加, 极化子结合能和质量变化单调地减小. 当薄膜厚度Lw<70 Å并且衬底厚度Lb<200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著, 随着衬底厚度的增加, 薄膜中极化子的结合能和质量变化逐渐变大; 当薄膜厚度Lw>70 Å或者衬底厚度Lb>200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著. 研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考.
关键词:
分数维方法
GaAs薄膜
极化子
低维异质结构 相似文献
2.
采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品,用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到:在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长;而在单晶硅衬底上,薄膜早期以有限扩散 生长模式生长,当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明,在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实,玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应
关键词:
生长机制
微晶硅薄膜
表面形貌
热丝化学气相沉积 相似文献
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The two-dimensional Laplace integral transform technique has been applied to get the spatial and temporal temperature distributions in both the molten layer thickness of a thin film coated on a substrate, the still solid part of the thin film of the target and the temperature distribution in the substrate. Also a formula for the time dependence of the evaporated part of the thin film of the target as well as the molten layer thickness of the thin film were obtained. Calculations of the obtained relations were carried out during the irradiation with a pulsed laser. The derivation has taken into account the temperature-dependent absorption coefficient of the irradiated surface and the chemical reaction in the vapor of the thin film. As an illustrative example, computations were carried out on an aluminum thin film coated on a glass substrate. 相似文献
5.
D. G. Gromov S. A. Gavrilov E. N. Redichev I. S. Chulkov M. Y. Anisimov S. V. Dubkov S. I. Chulkov 《Applied Physics A: Materials Science & Processing》2010,99(1):67-71
The process of melting with consequent disintegration into droplets of various thickness Au thin films has been studied. An
unexpected character of the melting–disintegration temperature dependence on thin-film thickness has been found: a reduction
of the process temperature has been observed with thickness in the range from 100 to 20 nm; however, the disintegration temperature
starts to increase for Au film thicknesses lower than 20 nm. It is supposed that the observed non-monotonic behavior of the
process temperature is caused by the influence of the substrate interaction with the film, resulting in an entropy change
of the system. 相似文献
6.
S. Henke K. H. Thürer S. Geier B. Rauschenbach B. Stritzker 《Applied Physics A: Materials Science & Processing》1995,60(4):383-389
The growth of epitaxial C60 thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness. 相似文献
7.
D. A. Filippov 《Physics of the Solid State》2012,54(6):1182-1185
The theory of the magnetoelectric effect in a thin magnetoelectric film-passive substrate structure is presented. Based on the simultaneous solution of the constitutive equations and the equations of motion for the film and substrate, the dispersion law has been derived for elastic waves propagating in the sample plane. It has been shown that the elastic vibrations in the substrate propagate in a near-surface layer if the velocity of propagation of elastic vibrations in the substrate is higher than that in the magnetoelectric film. In this case, the substrate thickness almost does not influence the magnitude of the effect. 相似文献
8.
The optimum parameters of laser annealing (crystallization) induced by repetitive pulses with a pulse duration of 100 fs and a wavelength of 800 nm, which falls in the transparency region of the film and, simultaneously, in the absorption region of the substrate, have been investigated experimentally as a function of the thickness of the ferroelectric film. It has been shown that, with an increase in the thickness of the ferroelectric film by 100 nm (in the range from 300 to 600 nm), the required power density of the laser beam increases, on the average, by 0.1 MW/cm2. The optimum exposure time of the laser beam with the desired power increases nonlinearly with an increase in the thickness of the film. 相似文献
9.
J. S. Wang Y. Cheng Q. J. Huang X. J. Liu S. Y. Zhang 《The European physical journal. Special topics》2008,153(1):155-158
The three-dimensional (3D) temperature field of
laser-induced transient thermal grating (TTG) for two-layered structures
such as diamond/substrate is obtained by the finite element method (FEM).
The numerical results indicate that the thickness of the diamond film has a
significant influence on the temperature field. On the other hand, we
further find that variation of the substrate significantly affects on the
temperature distribution in the diamond film, which has been ascribed to the
various thermal conductivities of the substrates. 相似文献
10.
高次谐波体声波谐振器(High-overtone Bulk Acoustic Resonator,HBAR)是由基底、压电薄膜及上下电极所组成的器件,它具有高的品质因数Q和多模谐振频谱特性.从给出HBAR的谐振谱出发,以各层的结构(厚度)和材料特性(特性阻抗和机械衰减因子)为参数,系统研究了机械品质因数QM的谐振谱特性。QM随基底或压电薄膜的厚度变化表现为一系列对应不同阶数的曲线。在给定频率下,QM随基底厚度的增加振荡上升,且最终趋于基底材料的机械品质因数,而其随压电薄膜厚度的增加呈波浪式下降。对于给定结构的HBAR,QM随频率(阶数)的增加呈波浪式下降。此外,考虑电极的厚度对QM的变化规律影响不大。为了获得较大的QM,应选择Al/AlN/Al/Sapphire或YAG结构的HBAR,且基底要较厚,压电薄膜和电极厚度要适中。 相似文献
11.
The effect of substrate roughness on growth of ultra thin diamond-like carbon (DLC) films has been studied. The ultra thin DLC films have been deposited on silicon substrates with initial surface roughness of 0.15, 0.46 and 1.08 nm using a filted cathodic vacuum arc (FCVA) system. The films were characterized by Raman spectroscope, transmission electron microscope (TEM) and atomic force microscopy (AFM) to investigate the evolution of the surface roughness as a function of the film thickness. The experimental results show that the evolution of the surface morphology in an atomic scale depends on the initial surface morphology of the silicon substrate. For smooth silicon substrate (initial surface roughness of 0.15 nm), the surface roughness decreased with DLC thickness. However, for silicon substrate with initial surface roughness of 0.46 and 1.08 nm, the film surface roughness decreased first and then increased to a maximum and subsequently decreased again. The preferred growth of the valley and the island growth of DLC were employed to interpret the influence of substrate morphology on the evolution of DLC film roughness. 相似文献
12.
Ghahraman Solookinejad Amir Sayid Hassan RozatianMohammad Hossein Habibi 《Applied Surface Science》2011,258(1):260-264
Zinc oxide (ZnO) thin film was fabricated by sol-gel spin coating method on glass substrate. X-ray reflectivity (XRR) and its optimization have been used for characterization and extracting physical parameters of the film. Genetic algorithm (GA) has been applied for this optimization process. The model independent information was needed to establish data analyzing process for X-ray reflectivity before optimization process. Independent information was exploited from Fourier transform of Fresnel reflectivity normalized X-ray reflectivity. This Fourier transformation (Auto Correlation Function) yields thickness of each coated layer on substrate. This information is a keynote for constructing optimization process. Specular X-ray reflectivity optimization yields structural parameters such as thickness, roughness of surface and interface and electron density profile of the film. Acceptable agreement exists between results obtained from Fourier transformation and X-ray reflectivity fitting. 相似文献
13.
由于普通的化学气相沉积法制作高掺Sn的二氧化硅薄膜比较容易产生结晶,而溶胶-凝胶法制备薄膜化学组成比较容易控制,可以制作出掺Sn浓度较大的材料。文章采用了溶胶-凝胶的方法制备出了66 mol%和75 mol%两种不同浓度的掺Sn的SiO2薄膜,用浸渍法多次提拉薄膜以增加薄膜的厚度,之后用紫外-可见分光光度计测量了薄膜的透射光谱。之前基于透射光谱的方法计算玻璃基底上薄膜的光学参数都是针对单面薄膜,该文针对浸渍法产生的双面薄膜,建立了相对应的薄膜模型,并分别用包络线法计算出了两种不同薄膜样品的光学参数。计算结果表明两种不同薄膜样品的折射率随着波长的增加而增加,薄膜的厚度都为900 nm左右。 相似文献
14.
The preparation and evaluation of graded multilayer ta-C films deposited by FCVA method 总被引:1,自引:0,他引:1
Gui-Gen Wang Hua-Yu ZhangWen-Yan Li Fang-Xu YangLin Cui Hong-Bo ZuoJie-Cai Han 《Applied Surface Science》2011,257(11):5064-5069
In this study, a series of graded multilayer ta-C films were investigated by varying their sublayer thickness ratios, in which each film sublayer was prepared at different substrate bias by filtered cathode vacuum arc (FCVA) method. The experimental results show that the graded multilayer film structure can effectively decrease the internal stress level of deposited ta-C film, and meanwhile the graded multilayer ta-C films still have high sp3 fractions. The applied substrate bias voltage and sublayer thickness ratio can apparently influence the microstructure characteristics and internal stress of the graded multilayer ta-C films. The graded multilayer ta-C film has larger sp3 fraction when applying a larger negative substrate bias voltage and having a thicker outer sublayer during the film deposition process. However, the internal stress in the as-deposited film also increases with larger thickness of the outer sublayer, and the optimal ratio of sublayer thicknesses is 1:1:1:1 for graded ta-C film with four sublayers. 相似文献
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A new variational method is proposed to investigate the dynamics of the thin film in a coating flow where a liquid is delivered through a fixed slot gap onto a moving substrate. A simplified ODE system has also been derived for the evolution of the thin film whose thickness h_f is asymptotically constant behind the coating front. We calculate the phase diagram as well as the film profiles and approximate the film thickness theoretically, and agreement with the well-known scaling law as Ca~(2/3) is found. 相似文献
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利用XRD技术测试了镀锌钝化膜结合界面的残余应力,同时通过电解抛光法检测了其厚度方向残余应力的分布规律,分析了残余应力对镀锌钝化膜结合强度的影响. 试验结果表明,镀锌钝化膜的残余应力均表现为压应力,并随着基体表面残余应力的增大而减小;钝化膜在2—10μm厚度方向的残应力为-274.5—-428.3MPa,其应力为梯度分布;镀锌钝化膜与基体的界面结合强度与其残余应力成反比,减小薄膜残余应力,有利于提高镀锌钝化膜与基体的结合强度.
关键词:
X射线衍射法(XRD)
镀锌钝化膜
结合强度
残余应力 相似文献
19.
Chung-Jen Ou 《Optical Review》2018,25(3):349-355
Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage. 相似文献
20.
K9和石英玻璃基片上Au膜真空紫外反射特性研究 总被引:3,自引:0,他引:3
采用离子束溅射法,分别在经过不同前期清洗方法处理过的K9及石英玻璃光学基片上,选择不同的镀膜参量,镀制了多种厚度的Au膜。对镀制的Au膜在真空紫外波段较宽波长范围内的反射率进行了连续测量。测试结果表明:辅助离子源的使用方式、Au膜厚度对反射镜的反射率有重大影响。基片材料、镀前基片表面清洗工艺等对反射率也有一定影响。采用镀前离子轰击,可显著提高Au膜反射率及膜与基底的粘合力;获得最高反射率时的最佳膜厚与基片材料、镀膜工艺密切相关。对经过离子清洗的石英基片,膜厚在30 nm左右反射率最高;比较而言,石英基片可获得更高的反射率;辅助离子源的使用还显著影响获得最高反射率时对应的最佳膜厚值,且对K9基片的影响更显著。 相似文献