Current oscillation and chaotic dynamics in superlattices driven by crossed electric and magnetic fields

We have theoretically studied current oscillation and chaotic dynamics in doped GaAsAlAs superlattices driven by crossed electric and magnetic fields. When the superlattice system is driven by a dc voltage, a stationary or dynamic electric-field domain can be obtained. We carefully studied the electric-field-domain dynamics and current self-oscillation which both display different modes with the change of magnetic field. When an ac electric field is also applied to the superlattice, a typical nonlinear dynamic system is constructed with the ac amplitude, ac frequency, and magnetic field as the control parameters. Different nonlinear behaviors show up when we tune the control parameters.     

超晶格中电场单极畴与偶极畴的形成和输运

采用分立漂移模型,数值模拟和分析直流偏压下超晶格中单极电场畴和偶极电场畴的形成和输运.随着超晶格两端接触层掺杂浓度和阱中掺杂浓度的不同,可以得到单极畴、偶极畴以及单极畴与偶极畴共存 关键词： 超晶格 单极畴 偶极畴 电流自激振荡     

Multistability,absolute negative conductivity and spontaneous current generation in semiconductor superlattices in large magnetic fields

We discuss electron transport through a semiconductor superlattice subject to an electric field parallel to, and a magnetic field perpendicular to, the growth axis using a semiclassical balance equation model. We find that the current–voltage characteristic becomes multistable in a large magnetic field; furthermore, hot electrons display novel features in their current–voltage characteristic, including absolute negative conductivity and a spontaneously generated dc current at zero bias.     

超晶格电流振荡的分岔图和Poincaré映射

基于超晶格输运的分立漂移模型,数值模拟了掺杂弱耦合GaAs AlAs超晶格在外加交流偏压下电场畴的输运行为.以黄金分割比固定交流驱动频率,模拟并分析不同交流幅度下电流的准周期、锁频及混沌现象.     

强流相对论环形电子束自调制振荡研究

 主要研究了强流相对论环形电子束在等位谐振腔内的非线性自调制振荡，用小信号理论分析了电子起振的条件，得出了电子起振的扰动频率。基于该理论分析，又提出了一种不外加磁场的新型高功率微波器件，该器件主要由一个圆柱谐振腔和一个同轴波导输出腔构成。用2.5维MAGIC粒子模拟软件对该非线性过程进行数值模拟，分析了输入电压、电流对输出微波功率的影响。模拟结果表明这种结构中确实存在非线性不稳定性，自调制的扰动频率则由电子束的初始能量、电荷密度和电子束的半径以及谐振腔的空间结构给定。利用谐振腔长为4.7 cm、二极管电压为2.8 MV、电流为20 kA的电子束，可以得到频率为4.29 GHz、功率为6 GW的微波输出，束-波转换效率约为11%。     

偏置电压对磁致伸缩/压电层合换能结构磁电性能影响

分析和测试了偏置电压调整时PZT5/Terfenol-D/PZT8层合换能结构磁电性能. 提出了一种磁致伸缩/压电层合磁电换能结构的一阶谐振频率控制方法. 通过改变压电驱动层的直流电压对磁电层合结构的预应变进行改变, 从而调整谐振频率. 分析偏置电压、 应变、 弹性模量、 谐振频率和谐振磁电电压系数之间关系. 分析表明: 在较小应变情况下, 控制电压几乎可以线性调节谐振频率, 而层合结构谐振磁电电压系数几乎与偏置电压无关. 实验研究验证: 理论与实验结果较好吻合. 在-170 V-+170 V的偏置电压时, 谐振频率可以几乎线性调整. 最大频率调整量达到1 kHz, 偏置电压对一阶纵振频率的控制率达到: 2.94 Hz/V. 在偏置磁场为0-225 Oe时, 谐振频率调整量与偏置磁场无关. 偏置磁场会改变谐振磁电电压系数, 在大于178 Oe静态磁场偏置时, 磁电电压系数最大, 达到1.65 V/Oe.     

Splitting of satellites in a time-dependent Kondo model

A time-dependent Kondo model, where both the voltage and the Kondo couplings oscillate on time, is considered. The bosonization technique at the Toulouse limit is applied to study the conductance and the magnetic susceptibility. It is shown that in addition to the satellites of the Kondo peak that appear in the conductance and the susceptibility as a function of the magnetic field or dc voltage, when the voltage oscillates, these satellites further split when the Kondo couplings also oscillate on time. The distance of the satellite splitting solely depends on the ratio between the oscillation frequencies of the voltage and of the Kondo couplings. When the Kondo couplings oscillate more rapidly than the voltage, the distance of the satellite peaks can be smaller than the voltage oscillation frequency.     

Transient electrical response of K0.30MoO3: Effects of isoelectronic dopants

In this paper, we examine the variation of threshold fields and the transient response of tungsten- and rubidium- substituted K_0.30MoO₃. We find that the dc threshold electric field for the onset of nonlinear behavior scales linearly with tungsten concentration, but varies as the square of the rubidium concentration, indicating strong and weak pinning effects, respectively. In tungsten- substituted samples, the threshold field becomes a strong function of frequency in the range 0.01– 1000 Hz. Above a critical frequency which depends on the doping level, the threshold field is proportional to -log (frequency). We interpret these results as a further example of the spin glass- like response of the CDW. Nonlinear conductivity is observed only after the voltage has exceeded the threshold for a finite time interval.     

Current self-oscillations and chaos in semiconductor superlattices

The nonlinear transport properties of weakly coupled superlattices have been investigated by measuring real-time current traces and frequency spectra. Current self-oscillations are observed for the undriven system by simply applying a dc voltage. Doped superlattices as well as photoexcited undoped superlattices can exhibit self-oscillations of the current. When the system is driven with an external ac voltage in addition to the dc voltage, the superlattices exhibit frequency-locked, quasiperiodic, and chaotic windows as a function of the amplitude of the driving voltage.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, opticalabsorption spectra, and terahertz emission of semiconductor superlattice withthe density matrix theory. The excitonic Bloch oscillation is driven by the dcand ac electric fields. The slow variation in the intraband polarizationdepends on the ac electric field frequency. The intraband polarizationincreases when the ac electric field frequency is below the Bloch frequency.When the ac electric field frequency is above the Bloch frequency, theintraband polarization downwards and its intensity decreases. The satellitestructures in the optical absorption spectra are presented. Due to excitonicdynamic localization, the emission lines of terahertz shift in different acelectric field and dc electric field.     

Nonlinear magnetoelectric effect in composite multiferroics

The theoretical and experimental studies of the nonlinear magnetoelectric effect in composite multiferroics in the low-frequency spectral region and in the electromechanical resonance region have been performed. It has been shown that such structures demonstrate a nonlinear magnetoelectric effect, which is quadratic in ac magnetic field strength at weak magnetic fields. In the region of the electromechanical resonance, the resonance excitation of an electric field occurs by means of ac magnetic field at a frequency lower than the resonance frequency by a factor of two. In the low-frequency spectral region, there is a difference of amplitude values of two neighboring voltage maxima due to the superposition of signals from the linear and nonlinear effects, and the difference is proportional to the dc magnetic field strength in weak fields. The results of the experimental study of the two-layer permendur-lead zirconate titanate structure are presented.     

光脉冲对光导开关非线性导通性能的影响

设计了异面结构的GaAs光导开关,开关厚度为0.6mm,电极间隙为3mm。利用半导体激光二极管对开关进行了触发实验。随着开关两端偏置电压不断升高,开关输出脉冲幅度线性增加,输出波形与光脉冲相似,当偏置电压超过一定阈值,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关进入了非线性工作模式。开关进入非线性模式,除了与偏置电压有关外,还与触发光脉冲前沿、能量有关,实验发现触发光脉冲前沿越快,能量越高,开关越容易进入非线性工作模式,所需的偏置电压也越低,但当电压低至某一阈值时(实验中约6kV),即使增加触发光能,开关也无法进入非线性模式。     

电光调制对外部光注入垂直腔表面发射激光器的偏振转换及其非线性动力学行为的操控性研究

针对主和副垂直腔表面发射激光器构成的外部注入激光器系统的偏振转换及其非线性动力学行为, 利用周期性极化铌酸锂晶体中准相位匹配线性电光调制, 本文提出了一种新的操控方案并且探索了其控制规律. 研究结果发现, 受到平行光注入或正交光注入的副激光器输出偏振度随外加电场成周期性振荡变化, 其振荡波峰轨迹包络曲线为正弦曲线, 而振荡波谷轨迹包络曲线为余弦曲线; 选取一定的主激光器偏置电流, 通过对来自主激光器的光进行电光调制, 受到两种方式注入的副激光器可以输出任意偏振模, 并且其非线性动力行为经历不同的演变. 另外, 副激光器的偏振度仅依赖于外加电场, 与副激光器的偏置电流无关.     

Absolute negative conductivity and spontaneous current generation in semiconductor superlattices with hot electrons

We study transport through a semiconductor superlattice with an electric field parallel to and a magnetic field perpendicular to the growth axis. Using a semiclassical balance equation model with elastic and inelastic scattering, we find that (1) the current-voltage characteristic becomes multistable in a large magnetic field and (2) "hot" electrons display novel features in their current-voltage characteristics, including absolute negative conductivity and a spontaneous dc current at zero bias. We discuss experimental situations providing hot electrons to observe these effects.     

Self-Oscillating Mode of a Nanoresonator

The paper proposes a new graphene resonator circuit which operates on the principle of a self-oscillator and has no drawbacks typical of nanoresonators as mass detectors and associated with their law quality factor, eigenfrequency errors (measurements from resonance curves), and dependence of quench frequency on oscillation frequency (curves with quenching for nonlinear systems). The proposed circuit represents a self-oscillator comprising an amplifier, a graphene resonator, and a positive feedback loop with a graphene oscillation transducer, and its major advantage is in self-tuning to resonance frequency at slowly varying resonator parameters, compared to oscillation periods. The graphene layer with a conducting substrate beneath it forms a capacitor which is recharged by a dc voltage source as its capacitance varies due to graphene deformation, and the recharge current is an oscillation- dependent signal transmitted from the transducer to the amplifier input. The graphene layer is placed in a magnetic field and is deformed when a current from the amplifier output is passed through. By properly choosing the magnetic field direction and the amplifier gain, it is possible to provide swinging oscillation whose amplitude is limited by the amplifier nonlinearity. For the proposed system we present an electromechanical model, dimensionless equations of motion, and numerical data demonstrating the generation of steady-state oscillations with eigenfrequency. Also presented is an analysis showing that the system can have only one limit cycle and that this cycle is always stable. The proposed resonator circuit can be used as a mass detector which determines the added mass from a change in self-oscillation frequency.     

Experimental investigation of the breakdown of the Onsager-Casimir relations

We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We find that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than 1 flux quantum) and that its magnitude depends on billiard geometry. In addition, we find an unexpected asymmetry in the power spectrum of the magnetoconductance with respect to reversal of magnetic field and bias voltage.     

Giant change in the magnetoimpedance of the magnetic tunnel junction by an AC bias voltage

Electron tunneling through a nonstationary magnetic tunnel junction has been studied in the approximation of a small-amplitude ac electric field. The effect of a giant change in the magnetoimpedance of a magnetic tunnel junction, which occurs at some frequencies of an ac bias voltage, has been predicted. The dependence of the effect of a giant change in the magnetoimpedance on the height and thickness of the magnetic tunnel junction and on the dc bias voltage has been studied.     

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

Magnetic-Field Dependence of Raman Coupling Strength in Ultracold ~(40)K Atomic Fermi Gas

We experimentally demonstrate the relation of Raman coupling strength with the external bias magnetic field in degenerate Fermi gas of ~(40)K atoms.Two Raman lasers couple two Zeeman energy levels,whose energy splitting depends on the external bias magnetic field.The Raman coupling strength is determined by measuring the Rabi oscillation frequency.The characteristics of the Rabi oscillation is to be damped after several periods due to Fermi atoms in different momentum states oscillating with different Rabi frequencies.The experimental results show that the Raman coupling strength will decrease as the external bias magnetic field increases,which is in good agreement with the theoretical prediction.     

Metastable state of sliding CDW in K0.3MoO3

The narrow band noise and the transient voltage oscillation were investigated in a k_0.3MoO₃ sample, which showed different I–V characteristics in the non-linear conductivity region for dc and pulse methods. For repeated current pulses, after a sufficiently long duration of dc current, the voltage response showed relaxation behavior with a relaxation time of about 30 min at 77 K. Similar relaxation was also observed for the opposite case of a dc current applied after repeated pulses. The slope of frequency of voltage oscillation against CDW current was constant through these relaxation process in both dc and pulse cases. But the peak of narrow band noise is larger and sharper after repeated pulses than in the dc stationary state. This result was understood as an enhancement of the coherent-phase region for voltage oscillation in the case of repeated pulses.