TiAl过渡层对电弧离子镀沉积TiAIN膜层的影响

利用电弧离子镀，在不锈钢和SiCp增强2024铝基复合材料基底上沉积TiAIN薄膜。结果表明：TiAIN膜层直接沉积在不锈钢基底上，膜层呈[111]择优取向；然而，TiAIN膜层沉积在不锈钢基底的TiAl过渡层上，膜层呈[220]方向择优取向；并且随着过渡层从零开始增厚，TiAIN膜层的织构系数T(111)逐渐减小，而T(200)逐渐增大，但膜层一直以[220]方向择优取向，内应力的存在可能是膜层产生[220]方向择优取向的原因。在复合材料基底TiAl过渡层上沉积，随着负脉冲偏压的增加，TiAIN膜层的择优取向由[111]向[200]转变。在不锈钢基底上，没有TiAl过渡层时，膜层表面相对光滑，大颗粒较少；有了TiAl过渡层，表面大颗粒较多；TiAl过渡层不同沉积时间对膜层表面影响不大，颗粒尺寸相差无几。没有TiAl过渡层时，膜层结合强度很差，有了TiAl过渡层，结合强度明显增加，但结合强度的大小随过渡层沉积时间(厚度)变化。     

基于电沉积过渡层沉积CVD金刚石薄膜的研究

在硬质合金的Cu、Ni、Cr电沉积过渡层上采用热丝CVD法沉积出金刚石薄膜.利用SEM和Raman对金刚石薄膜进行了研究,对影响膜基结合强度的因素进行了分析,利用压痕法对金刚石薄膜与基体的结合强度进行了检验.结果表明,在Cr过渡层上沉积的金刚石薄膜的质量和膜基结合性能较好,优于在Cu、Ni过渡层上沉积的金刚石薄膜的质量和膜基结合性能.     

Si基上电沉积Cu薄膜的形貌与择优取向

采用电化学沉积技术在Si衬底上沉积了Cu膜.场发射扫描电镜和X射线衍射分析表明:膜中存在Cu纳米颗粒, 并且表现出择优取向,与衬底的取向和斜切角度以及沉积电流密度有关.在Si(100) 衬底上,铜(220)晶面的织构系数随电流密度的增加而增加.在相同沉积条件下,在斜切角较小的Si(111)和Si(100)衬底上择优取向面都是铜 (220) 面,而在斜切角为4°的Si(111)衬底上铜(111)晶面为择优取向面.     

化学溶液法制备涂层导体过渡层La2Zr2O7厚膜的研究

为制备高质量的双轴织构La2Zr2O7(LZO)涂层导体过渡层,本文采用化学溶液法(Chemical solution deposition,简称CSD法),以乙酰丙酮镧和乙酰丙酮锆为溶质,丙酸为溶剂配制成前驱盐溶液,在立方织构的Ni-5 at;W基底上用快速一步法退火工艺制备了LZO种子层及双层LZO厚膜.SEM观察种子层呈岛状均匀排列,符合种子层形貌特点.XRD结果显示0.06 mol/L浓度种子层上制备的LZO厚膜具有很强的双轴立方织构,其中(222)面Phi扫描和(400)面摇摆曲线半高宽值分别为6.37°和5.82°.SEM观察发现120 nm厚的LZO薄膜表面平整,无裂纹,为后续沉积YBCO提供了很好的模板.     

工艺参数对高功率MPCVD金刚石膜择优取向的影响研究

使用自行研制的椭球谐振腔式MPCVD装置,以H2-CH4为气源、沉积功率8 kW条件下,在不同CH4浓度、沉积温度和气体流量工艺条件下制备了大面积金刚石膜.使用X射线衍射仪对金刚石膜的择优取向的变化规律进行了研究.实验结果表明,高功率条件下工艺参数对金刚石膜的择优取向有不同程度的影响.在CH4浓度由0.5;上升到1.0;时,金刚石膜的择优取向由(220)转变为(111),由1.O;上升到2.5;时,则由(111)转变为(220)以及(311);在700 ～ 1050℃温度范围内,随着沉积温度的升高,金刚石膜(111)择优取向生长的倾向增高,当沉积温度高于1050℃时,金刚石膜改变了原先的以(111)择优取向生长的趋势,变为了以(100)择优取向生长;在气体流速为200～1000 sccm范围内时,随气体流量的增加,金刚石膜(111)择优取向的倾向增加.当气体流量大于1000sccm时,金刚石膜(111)择优取向的倾向又稍有降低.     

在预涂陶瓷过渡层的多谱段ZnS衬底上沉积金刚石膜的探索研究

本文采用真空电子束蒸镀技术在多谱段ZnS衬底上沉积了适合金刚石膜沉积的致密陶瓷过渡层,并利用微波等离子体CVD金刚石膜低温沉积技术进行了金刚石膜沉积研究.发现在陶瓷过渡层上的金刚石形核极其困难,其原因可能是陶瓷涂层在沉积过程中龟裂导致ZnS蒸汽扩散逸出干扰金刚石形核所致.本文采用诱导形核技术在过渡层/ZnS试样表面观察到极高密度(1010/cm2)的金刚石形核,并对金刚石/过渡层/ZnS试样的红外透过特性进行了评价.     

基于离子渗铌过渡层的金刚石刀具涂层结合性能研究

对含钴量10wt;的硬质合金刀片进行酸碱两步法预处理后采用双辉离子渗技术在表面渗铌过渡层,采用热丝化学气相沉积金刚石涂层.通过SEM、Raman等手段表征涂层形貌和质量,用压痕法检测膜基结合性能,研究了该预处理方法对金刚石生长及其结合性能的影响.结果表明,相比传统的过渡层制备方法,双辉离子渗技术具有更大的优势,铌过渡层填补了酸碱两步法产生的孔隙,在高温作用下向基体内部扩散并浸润WC颗粒,与基体结合紧密,减小了疏松层厚度,同时阻挡了Co的扩散,提高了形核密度并细化了金刚石晶粒,涂层质量和膜基结合性能得到改善.     

过渡层对纳米非晶碳薄膜场发射性能的影响

采用微波等离子体化学气相沉积法在经研磨处理后的Si(111)面上制备出了纳米非晶碳薄膜.为改善薄膜的场发射性能,在研磨好的Si基底上运用直流磁控溅射法沉积了一层金属过渡层.本文分别选择三种常见金属:钛(Ti)、鉬(Mo)、镍(Ni)来作对比试验.结果发现用钛作为过渡层时薄膜场发射效果最好,主要表现为开启电场低,同一电场下发射电流大,发射点密度较大且分布均匀等.利用迭代法计算了钛作为过渡层时制备的纳米非晶碳薄膜的有效发射面积和功函数.     

石英衬底上大晶粒多晶Si薄膜的制备与结构表征

利用高频感应加热化学气相沉积工艺,以H2稀释的SiH4作为反应气体源,在未抛光的粗糙石英衬底上直接沉积制备了具有均匀分布的大晶粒多晶Si膜.采用扫描电子显微镜、X射线衍射和可见-紫外分光光度计等检测手段,测量和分析了沉积膜层的表面形貌、晶粒尺寸、择优取向与光反射等特性.结果表明,多晶Si膜中Si晶粒的尺寸大小和密度分布不仅与工艺参数有关,而且强烈依赖于衬底的表面状况.1000℃下沉积薄膜的平均晶粒尺寸为～3μm,择优取向为<111>晶向.反射谱测量表明,920℃下制备薄膜的反射率比1000℃下制备的更低,最低值达18.4;,这应归功于前者具有更大的表面粗糙度.     

缓冲层厚度对Ge/Si多层膜的影响

采用离子束溅射技术,通过改变Si缓冲层厚度,在p型Si衬底生长了一系列的Ge/Si多层膜样品.利用Raman光谱、X射线小角衍射以及原子力显微镜等分析测试技术,研究了多层薄膜的结晶、膜层结构、表面形貌等性质.结果表明:通过引入缓冲层,在一定程度上可以提高颗粒的结晶性;随着缓冲层逐渐沉积,来自界面态的影响有了明显的减弱,且多层膜结构的生长得到有效改善.红外吸收光谱实验表明多层膜的吸收特性与其周期结构密切相关,因此可以通过改变缓冲层厚度的方法,实现对多层薄膜红外吸收特性的调制.     

Characterization of reactive DC magnetron sputtered TiAlN thin films

Thin films of about 1μm Titanium Aluminum Nitride (TiAlN) were deposited onto mild steel substrates by reactive direct current (DC) magnetron sputtering using a target consisting of equal segments of titanium and aluminum. X‐ray diffraction (XRD) analysis showed that the TiAlN phase had preferred orientations along 111 and 200 with the face‐centered cubic structure. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) analyses indicated that the films were uniform and compact. Photoluminescence (PL) spectra reveal that TiAlN thin films are of good optical quality. Laser Raman studies revealed the presence of characteristic peaks of TiAlN at 312.5, 675, and 1187.5 cm^–1. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

衬底温度对碲化镉薄膜结构及光学性能的影响

碲化镉(CdTe)因具有良好的光电性能和吸收性能经常被作为太阳电池的吸收层材料.以纯度为99.99;的CdTe陶瓷靶为靶材在玻璃衬底上采用射频磁控溅射的方法制备了一系列的CdTe薄膜,研究了衬底温度对样品薄膜的厚度、结构和光学性能的影响.结果表明:随着衬底温度的增加薄膜的厚度在逐渐地减少;制备的薄膜都是立方闪锌矿结构且具有高度的(111)面择优取向;薄膜对可见光有较好的吸收性能,随衬底温度的增加而减小.     

Characterization of ion beam sputtered ZrN coatings prepared at different substrate temperatures

Zirconium nitride (ZrN) coatings were prepared on Si (100) by single ion beam sputtering in N₂ and Ar mixture at different substrate temperatures. Structure and morphology of the ZrN coatings were analyzed using X‐ray diffraction and atomic force microscopy. Rutherford backscattering technique was utilized for the determination of composition and thickness of the coatings. Electrical properties of the ZrN coatings were determined by four point‐ probe and Hall test. The results showed that the growth of ZrN with a preferred (111) orientation was achieved. The coating thickness depended on the substrate temperature and coating surface roughly remained smooth. The resistivity of the coatings varied from 1× 10^‐3 to 14× 10^‐3 Ω cm depending on the substrate temperature. A correlation between resistivity and charge carrier density was established to explain the electrical behavior of the coatings. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

An X-ray scattering study of hydrogenated nanocrystalline silicon with varying crystalline fraction

Using X-ray diffraction (XRD) and small angle X-ray scattering (SAXS), we probed the nanostructural features of several PECVD grown nc-Si:H thin films with varying crystalline volume fraction. XRD results of a mixed phase film, 70% a-Si:H and 30% c-Si:H, show these crystallites have a preferred [220] orientation in the growth direction. Another film with approximately 90% c-Si also shows elongated grains, but with a preferred [111] orientation. The SAXS results also show an increase in scattering intensity when compared to the mixed phase material. In the mixed phase material, models show that the electron density fluctuations between the amorphous and crystalline phases are not enough to explain the measured SAXS scattering. Hydrogen clustered at the crystallite boundaries and in void regions of the a-Si phase must be included as well.     

衬底温度对Cu2O薄膜结构和性能的影响

采用射频磁控溅射技术在石英衬底上制备了Cu2O薄膜。系统研究了衬底温度对薄膜结构、光学和电学性能的影响。XRD的结果显示,在所有衬底温度条件下均可得到单相的Cu2O结构,而且随着衬底温度由500 K升至800 K,薄膜表现出(111)择优取向的生长特点。电学和光学测试结果表明,室温电导率和光学带隙随着衬底温度的升高而增加,800 K制备的薄膜的带隙值最高约为2.58 eV。     

闭合状态对磁控溅射Cr镀层生长过程的影响

利用非平衡磁控溅射离子镀技术于不同磁场闭合状态下在单晶硅基体上制备出Cr膜,采用扫描电子显微镜和X射线衍射仪观察并分析了不同闭合状态下镀层的微观形貌和晶体择优生长趋势.结果表明:闭合状态显著影响着Cr膜生长过程中的柱状晶取向和致密度.不闭合状态下,Cr膜截面组织为典型疏松的柱状晶体组织,镀层沿(110)面择优生长;半闭合状态下,Cr膜截面组织为较致密的柱状晶体组织,在不同生长时期,镀层沿(110)或(200)面择优生长;完全闭合状态下,Cr膜截面组织在初始1 μm范围内,为致密纤维状晶体组织,随后呈现致密的无明显柱状晶体形貌,镀层沿(200)面择优生长.     

Crystalline growth of germanium thin films on single crystal silicon substrates by solid phase crystallization

We have studied the epitaxial-like growth of germanium (Ge), due to solid phase crystallization (SPC) from amorphous Ge (a-Ge) deposited on single crystal silicon (Si) substrate. The crystalline growth of Ge following the orientation of Si substrates was successfully obtained by the SPC at 400 °C or higher. The preferential growth on Si (111) substrates continues up to 10,000 Å. Different orientations from the substrate orientation in XRD patterns are slightly observed in the growth on Si (100) substrates at 450 °C, but the preferential growth of (100) orientation continued in the whole film thickness in TEM images. The epitaxial-like growth of Ge may be more preferable on the Si (111) substrate than the (100) one.     

AES and FTIR characterization of sol–gel alumina films

In this work we obtained sol–gel alumina coatings on AISI 304 stainless steel substrates. Alumina sols were prepared by using aluminum isopropoxide (AI) as precursor, acetic acid (HOAc) as catalyst, ethanol (C₂H₅OH) or isopropanol (C₃H₈O) as solvent, and water. The as-prepared solutions were deposited on stainless steel substrates by means of the dip-coating technique. The obtained composites were characterized by Fourier transform infrared spectroscopy (FTIR) and Auger electron spectroscopy (AES). We observed that the concentration of AlO type bonds in the obtained alumina coatings depends on the solvent type used, temperature and peptization state of the sol, withdrawal speed, and number of dipping cycles. AES experiments showed that the interface formed between the alumina coating and substrate surface is in general formed by several layers of different chemical compositions.     

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1]_ScN//[0 0 1]_Si and [1 0 0]_ScN//[1 0 0]_Si, despite the high (11%) lattice mismatch between ScN and Si. The film grain size increases and the film ω-FWHM decreases with increasing Sc flux, but the film roughness increases. Films grown under similar conditions on 111-oriented Si resulted in mixed 111 and 100 orientations, indicating that the 100 orientation is favoured both due to texture inheritance from the substrate and due to the growth conditions used.