Crystalline growth of germanium thin films on single crystal silicon substrates by solid phase crystallization |
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Authors: | Atsushi Suzuki Masao Isomura |
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Institution: | Course of Electrical and Electronic System, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan;Nagoya University;Hokkaido University;Tokyo Institute of Technology;Gifu University;Hiroshima University |
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Abstract: | We have studied the epitaxial-like growth of germanium (Ge), due to solid phase crystallization (SPC) from amorphous Ge (a-Ge) deposited on single crystal silicon (Si) substrate. The crystalline growth of Ge following the orientation of Si substrates was successfully obtained by the SPC at 400 °C or higher. The preferential growth on Si (111) substrates continues up to 10,000 Å. Different orientations from the substrate orientation in XRD patterns are slightly observed in the growth on Si (100) substrates at 450 °C, but the preferential growth of (100) orientation continued in the whole film thickness in TEM images. The epitaxial-like growth of Ge may be more preferable on the Si (111) substrate than the (100) one. |
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