纳秒激光刻蚀玻璃基质铬薄膜直写微光栅结构

利用波长为351 nm的半导体泵浦全固态脉冲激光器,采用双光束干涉方法,对蒸镀在石英玻璃衬底上的铬薄膜直接刻蚀形成微光栅结构的方法进行了实验研究.通过实验,分析了激光能量和脉冲数与微光栅结构槽形和一级衍射效率之间的关系.利用光学显微镜和原子力显微镜检测分析光栅槽形,测得槽深为253 nm的最佳微光栅结构,并测得其在波长为532 nm的激光的一级衍射效率为6.5%.结果表明:在激光能量为1 150 μJ时,适当增加曝光脉冲数有利于提高制备光栅的槽深和一级衍射效率.     

镍金属表面双光束激光干涉直写研究

利用波长为351 nm的半导体抽运全固态脉冲激光器,采用双光束干涉方法,对金属镍板表面直接刻蚀形成微光栅结构的方法进行了实验研究.通过改变激光功率和激光脉冲数等实验参量,研究其对制备的微光栅结构槽形和一级衍射效率的影响.利用扫描电镜和原子力显微镜测量光栅槽形,测得光栅周期为1.25 μm,光栅槽深为10～280 nm,并测量了相应的衍射效率.发现当采用激光单脉冲能量为1.2 mJ,采用10个脉冲加工时,测得槽深为280 nm,一级衍射效率最高（18%）的微光栅结构.利用光栅的衍射理论对衍射效率变化进行了分析.该研究拓展了纳秒激光在加工微结构方面的应用,为在金属材料表面制作纳米压印模版提供了一种新方法.     

多光束纳秒紫外激光制作硅表面微结构

使用波长351 nm的半导体泵浦全固态脉冲激光器作为光源,经过位相光栅分束,形成干涉光场,在硅表面直接刻蚀微结构,制作了周期为0.55 μm,槽深可达55 nm的一维微光栅和周期为1.25 μm,刻蚀深度45 nm的正交微光栅结构.给出了微光栅形貌结构的扫描电子显微镜和原子力显微镜的测量结果.正交微光栅的一级衍射效率在1.8%～6.3%之间.该研究是改变硅表面微结构,优化硅材料特性的一种新方法,并扩展了大功率激光刻蚀在表面微加工领域的应用.     

多光束纳秒紫外激光制作硅表面微结构

使用波长351 nm的半导体泵浦全固态脉冲激光器（DPSSL）作为光源,经过位相光栅分束,形成干涉光场,在硅表面直接刻蚀微结构,制作了周期为0.55 µm,槽深可达55 nm的一维微光栅和周期为1.25 µm,刻蚀深度45nm的正交微光栅结构。给出了微光栅形貌结构的扫描电子显微镜(SEM)和原子力显微镜(AFM)的测量结果。正交微光栅的一级衍射效率在1.8%到6.3%之间。该研究是改变硅表面微结构,优化硅材料特性的一种新方法,并扩展了大功率激光刻蚀在表面微加工领域的应用。     

基于锥面衍射实现高效率双光栅光谱合成

分析了基于锥面衍射的双光栅光谱合成系统的可行性,设计了激光入射角为Littrow角附近的双多层介质膜(MLD)光栅光谱合成系统,开展了两路合成实验。当入射极角等于自准直入射角,入射方位角为6°时,光栅衍射效率近似等于光束自准直入射时的衍射效率。基于锥面衍射原理,对中心波长为1050.24 nm和1064.33 nm的两束光纤激光子束进行合成,入射极角为43.99°,测得合成效率为92.9%,较基于非锥面衍射的双光栅光谱合成系统的合成效率提高了8.8%;测得合成光斑光束质量Mx 2=1.204,My 2=1.467,与基于非锥面衍射的双光栅光谱合成系统输出光斑光束质量基本一致。     

软X射线位相型金透射光栅的设计与制作

根据衍射光栅的标量理论,计算并讨论了金透射光栅在软X波段衍射效率对光栅厚度和占宽比的依赖关系.结果表明,选择合适的光栅槽深和占宽比,高达 21.9%的衍射效率可能被获得,远高于振幅型光栅的+1级衍射效率10.14%.通过全息光刻与电镀转移技术制作的位相型金透射光栅由300nm的聚酰亚胺薄膜支撑,光栅槽深200nm,占宽比为0.55,周期为1μm,面积为20mm×5mm.在国家同步辐射装置上,测得其+1级透射衍射效率在波长λ=7.425nm时获得最大值,约为16%. 关键词： 透射位相光栅 全息光刻 电镀     

用于光谱合束技术的透射光栅设计与优化

设计并制作了一种亚波长透射光栅,利用该光栅实现了半导体激光阵列光谱合束。基于严格耦合波理论,对光栅占空比、脊高和周期等进行了设计,模拟了不同结构参数对光栅衍射效率的影响,从而实现了光栅衍射效率的优化。理论计算表明,优化后的光栅对940nm激光的-1级衍射效率可达92%。实验结果表明,激光阵列光谱合束后,输出功率为46.2 W,光束质量为3.9mm·mrad。     

基于体布拉格光栅的Nd:YAG/Cr4+:YAG激光器波长调谐特性

通过建立包含体布拉格光栅波长特性的速率方程模型,模拟了不同泵浦功率、体布拉格光栅中心衍射效率和带宽情况下,激光器的波长调谐特性,包括波长调谐范围、激光光谱、能量和脉冲宽度。实验搭建了以体布拉格光栅作为输出镜的激光二极管泵浦Nd:YAG/Cr~(4+):YAG激光器,测试了不同体布拉格光栅温度和泵浦功率时的激光波长、线宽、能量和脉冲宽度,实验结果和理论分析结果基本相符。在重复频率为10 kHz,脉冲宽度为40μs,峰值功率为10.7 W的矩形脉冲泵浦下,通过调整中心衍射效率为70%,带宽为60 pm的体布拉格光栅温度,获得了1 063.77～1 064.48 nm的波长调谐。当体布拉格光栅为50℃时,获得了单脉冲能量为109.5μJ,脉冲宽度为1.71 ns,中心波长为1 064.432 nm,线宽为38.3 pm,光束质量M~2因子小于1.2的激光输出。研究结果可为体布拉格光栅的应用、激光器的光谱分析及设计提供参考。     

基于等效折射率人工剪裁的宽带高效光栅耦合器

利用不同占空比的亚波长结构剪裁光栅槽的等效折射率来改变光栅的衍射特性实现衍射输出光束与单模光纤之间的模式匹配,通过优化埋氧化层厚度和集成底部金反射镜,可以改善光栅耦合器弱的方向性,从而设计出用于SOI波导与光纤之间高效率耦合的光栅耦合器。采用本征模展开方法,模拟了光栅耦合器随剪裁的光栅槽等效折射率变化的相关特性,在SOI波导和单模光纤之间对波长为1550nm的光获得了最高93.1%的耦合效率,3dB带宽为82nm。     

宽带镀金正弦光栅

为了满足强激光系统中大尺寸镀金光栅对糟深均匀性的要求,采用梯形光栅-涂胶-离子束溅射镀膜和全息光刻-离子束溅射镀膜两种方法,分别制作了线密度为1 740线/mm,槽深为210 nm的宽带镀金正弦光栅.测得其TM波、-1级自准值平均衍射效率在750～850 nm范围内大于87％,最高可达90％.这两种方法易控制光栅槽深,去掉光刻胶后基底可继续使用,且制作的光栅的衍射效率和带宽能满足国内一般宽带镀金脉冲压缩光栅的使用要求.     

Investigation of plumes produced by material ablation with two time-delayed femtosecond laser pulses

We experimentally investigated and herewith reported the results of laser ablation of copper and gold with two time-delayed femtosecond laser pulses at 800 nm in vacuum. The ablation plume dynamic was monitored by fast plume imaging and time- and space-resolved optical emission spectroscopy. Optical microscopy was used to follow the ablation depth as a function of the delay between the two laser pulses. Nanoparticles deposition on mica substrates was analysed by atomic force microscopy.We estimate roughly the plume's atomization degree - that is the mass fraction of atomized material over the total ablated mass - from the relative intensities of radiation emitted from atoms and nanoparticles. It is shown that the atomization degree depends critically on the time delay between both laser pulses and on the characteristic time of electron-lattice relaxation. The increase of the atomization degree is accompanied by the decrease of the ablation depth. Atomic force microscopy measurements confirm the partial atomization of nanoparticles, as the analyses of particle deposition on mica substrates show a large decrease of the number of nanoparticles for large delay between the two pulses.     

Femtosecond laser micromachining of grooves in indium phosphide

Femtosecond laser micromachining of indium phosphide is investigated using 150 fs light pulses at a center wavelength of 800 nm. The ablation rate for micromachining of grooves is investigated as a function of pulse energy, feed rate, number of passes over the same groove, and the light polarization relative to the cutting direction. A logarithmic dependence of the groove depth on the laser fluence is observed with two regimes characterized by different ablation rates and different thresholds. The groove depth is found to be inversely proportional to the feed rate or equivalently linearly proportional to number of pulses delivered per unit area. With multiple passes over the same groove the depth increases linearly up to about 20 consecutive passes. Above 20 passes the ablation rate decreases until a depth limit is approached. The best results in terms of groove geometry and depth limit are obtained with the polarization of the beam perpendicular to the cutting direction. PACS 42.62.Cf; 79.20.Ds; 81.20.Wk     

Backside etching of fused silica with Nd:YAG laser

The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography was studied. The comparable high threshold fluences of about 3 and 7 J/cm² for 18 and 73 ns pulses, respectively, are caused by the high reflectivity of the fused silica-gallium interface and the high thermal conductivity of gallium. For the 18 and 73 ns long pulses the etch rate rises almost linearly with the laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. Incubation processes are almost absent because etching is already observed with the first laser pulse at all etch conditions and the etch rate is constant up to 30 pulses.The etched grooves are Gaussian-curved and show well-defined edges and a smooth bottom. The roughness measured by interference microscopy was 1.5 nm rms at an etch depth of 0.6 μm. The laser-induced backside etching with gallium is a promising approach for the industrial application of the backside etching technique with IR Nd:YAG laser.     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

超短激光脉冲对宽带光学物质的微加工

通过讨论超快飞秒激光脉冲和长脉冲宽度的激光脉冲紧导致宽能隙透明电介质的损伤机理和比较超短激光脉冲与长激光脉冲对宽能隙透明电介质的损伤程度，得出超短激光脉冲是一种可对透明宽带电介质进行加工的有效工具的结论。当波长为800nm，脉冲宽度为150fs的激光脉冲紧聚焦到不同的宽能隙透明电介质（K9玻璃和ZK6玻璃）体内时，可制作不同光栅常数的光栅，并在波长为635nm的He-Ne连续激光的垂直照射下，对光栅的远场相对衍射效率和光栅的衍射效率进行了测量。     

Femtosecond laser micromachining of grooves in silicon with 800 nm pulses

Femtosecond laser micromachining of grooves in silicon is investigated using 150 fs pulses with a center wavelength of 800 nm. Ablation rates are investigated as a function of pulse energy, translation speed, and the number of consecutive passes. The effect of the laser polarization relative to the translation direction is observed, and the morphologies of the groove walls are examined. In addition, the uniformity of the groove depth is investigated as a function of the number of passes of the sample under the beam. PACS 42.62.Cf; 79.20.Ds; 81.20.Wk     

受激发射损耗荧光显微镜的模型设计及参量优化

受激发射损耗荧光显微镜利用荧光饱和和激发态荧光受激损耗的非线性关系,通过限制损耗区域,可突破远场光学显微术的衍射极限分辨力并实现三维成像。基于对粒子速率方程组的修正,建立了描述荧光团各能级粒子数概率时间特性的模型,并定义了时间平均损耗效率判据。采用高斯函数模拟两束入射激光脉冲通过对模型的数值计算,模拟了激发脉冲的SIED激光脉冲的光强、脉冲宽度以及两束光的延迟时间等参量与损耗效率之间的关系,并获得了各参量的最佳值,优化了损耗效率,为提高系统分辨力提供了有效的途径。     

Thin films of silver nanoparticles deposited in vacuum by pulsed laser ablation using a YAG:Nd laser

We report the deposition of thin films of silver (Ag) nanoparticles by pulsed laser ablation in vacuum using the third line (355 nm) of a YAG:Nd laser. The nanostructure and/or morphology of the films was investigated as a function of the number of ablation pulses, by means of transmission electron microscopy and atomic force microscopy. Our results show that films deposited with a small number of ablation pulses (500 or less), are not continuous, but formed of isolated nearly spherical Ag nanoparticles with diameters in the range from 1 nm to 8 nm. The effect of increasing the number of pulses by one order of magnitude (5000) is to increase the mean diameter of the globular nanoparticles and also the Ag areal density. Further increase of the number of pulses, up to 10,000, produces the formation of larger and anisotropic nanoparticles, and for 15,000 pulses, quasi-percolated Ag films are obtained. The presence of Ag nanoparticles in the films was also evidenced from the appearance of a strong optical absorption band associated with surface plasmon resonance. This band was widened and its peak shifted from 425 nm to 700 nm as the number of laser pulses was increased from 500 to 15,000.