Li2Sr0.995-xSiO4:0.005Eu2+,xLa3+荧光粉的晶体结构与发光特性

采用高温固相反应法在还原气氛下制备了Li2Sr0.995-x SiO4:0.005Eu2+,xLa3+荧光粉。利用X射线衍射仪、荧光光谱仪和紫外可见分光光度计对样品的晶体结构、激发光谱、发射光谱与荧光衰减寿命以及漫反射光谱进行测试分析。实验结果表明:所制得的样品为单一相的Li2SrSiO4晶体结构化合物。Li2Sr0.995-x SiO4:0.005Eu2+,xLa3+荧光粉的激发光谱均呈现出宽激发带,其中最强的激发峰位于408 nm左右。在此波长激发下可得到峰值位于570 nm左右的宽波段单峰发射光谱,其对应于Eu2+离子4f65d1→4f7电子跃迁。La3+掺杂Li2SrSiO4:Eu2+荧光粉基质产生了晶格缺陷[2La·Sr·V″Sr],其可以吸收光能并将能量传递给发光中心离子Eu2+,进而增强Li2Sr0.995SiO4:0.005Eu2+荧光粉的发光强度。漫反射光谱和荧光衰减寿命测试结果也证实La3+掺杂能够增加Eu2+的激发态吸收能量,延长发光中心Eu2+离子荧光衰减寿命。     

Li2SrSiO4:Ce3+,Tb3+荧光粉的发光特性及Ce3+→Tb3+的能量传递

用固相反应法合成了具有单相的Li2EuSiO4结构的Li2Sr1-x-ySiO4:xCe3+,yTb3+系列样品。荧光光谱研究表明,Li2SrSiO4:Ce3+发射很强的蓝光,最强的激发峰位于360 nm;而Li2SrSiO4:Tb3+发射很强的绿光,最强的激发激发峰位于243 nm,但在350～410 nm的激发非常微弱。在Ce3+,Tb3+共掺杂的样品Li2Sr0.99-ySiO4:0.01Ce3+,yTb3+中,观察到Ce3+对Tb3+的共振能量传递。由于Ce3+对Tb3+能量传递,Tb3+的激发光谱中出现360 nm附近的宽激发峰。控制Tb3+/Ce3+掺杂浓度比可以实现绿蓝双基色的调制。这种双基色的荧光粉有望在紫外激发的白光LED中获得应用。     

Ce3+,Tb3+,Eu3+共掺杂Sr2MgSi2O7体系的白色发光和能量传递机理

通过正交试验,采用高温固相法制备了Sr2-x-y-zMgSi2O7∶xCe3+,yTb3+,zEu3+系列样品.使用X射线衍射仪和荧光光谱仪表征了样品的物相和发光性质,并讨论了Ce3+-Tb3+-Eu3+共掺杂Sr2MgSi2O7体系中的能量传递过程.实验结果表明,在327 nm波长激发下,所合成荧光粉的发射峰主要位于387 nm(蓝紫)、542nm(绿)和611 nm(红)处;分别以387,542和611 nm为监控波长,所得激发光谱显示荧光粉在327 nm处有最好的激发.在327 nm光激发下,系列样品发光进入白光区.最优化的荧光粉为Sr1.91MgSi2O7∶0.01Ce3+,0.05Tb3+,0.03Eu3+,其色坐标为(0.337,0.313),是一种潜在的发光二极管(LED)用白色荧光粉.     

KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)荧光粉的制备与发光性能研究

采用高温固相反应法制备了KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)系列荧光粉。利用X射线衍射仪对样品的物相结构进行了分析,结果表明:稀土离子的掺入没有改变荧光粉的主晶相。利用荧光光谱仪对样品的发光性能进行了测试,发现在近紫外光激发下掺杂Eu2+离子的样品具有宽带发射峰,最强发射位于450 nm左右,对应于Eu2+离子的4f65d1→4f7辐射跃迁。随着Eu2+掺杂量的增加,发射光从蓝光逐渐转变到蓝白光。另外,KSrBP2O8:Tb3+和KSrBP2O8:Eu3+能够在近紫外光激发下分别发射出绿光和红光,其最佳掺杂浓度分别为0.04%和0.08%(摩尔分数)。     

TiO2对ZnO/ZnS:Eu3+荧光粉发光性能的影响

采用溶胶-凝胶-沉淀法制备ZnO/ZnS/2TiO2:Eu3+荧光粉,并采用X射线衍射(XRD)、红外光谱(IR)、透射电镜(TEM)以及荧光光谱技术对其结构、组成、形貌和发光性能进行表征,探讨其发光机理。结果显示,ZnO/ZnS/2TiO2:Eu3+荧光粉的结构在温度高于600℃时趋于稳定状态,呈不规则结构,由ZnO、TiO2和ZnS构成。IR谱图表明,Ti-O-Ti桥氧键网络结构有利于Eu3+之间的能量传递。荧光光谱分析表明,引入TiO2使Eu3+光谱选律禁阻解除,提高了ZnO/ZnS/2TiO2:Eu3+荧光粉的发光性能,且当nZn(NO3)2:nTiO2=1:2时荧光粉的发光性能最好,612 nm处的5D0→7F2电偶极跃迁为最强发射峰,最佳退火温度为600℃。     

Li+共掺杂对Er3+-Yb3+∶TiO2紫外、可见和红外发光同步增强研究

采用溶胶-凝胶(Sol-gel)法制备了Li+共掺杂的Er3+-Yb3+∶TiO2粉末。976 nm激光激发下在波长350~1700 nm范围内观察到了紫外、蓝色、绿色和红色上转换发光和红外下转换发光。随着Li+共掺杂浓度由0增大到20mol%,Er3+-Yb3+∶TiO2的紫外、可见和红外发光强度同步增强。低Li+共掺杂浓度引起的Li+固溶以及高Li+共掺杂浓度引起的相变过程相继破坏了Er3+的晶体场对称性,导致紫外、可见和红外发光显著增强。结果表明共掺杂Li+是一种提高Er3+掺杂材料发光性能的有效方法。     

NaY(WO4)2∶Eu3+/Tb3+/Tm3+白色荧光粉的制备与发光性能

采用溶剂热法合成了一种单一相白色荧光粉NaY(WO4)2∶Eu3+,Tb3+,Tm3+。通过X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)及荧光光谱(PL)对制备的系列样品的物相、形貌和荧光性质进行了表征。结果表明:在荧光粉NaY(WO4)2∶x%Eu3+,4%Tb3+,1%Tm3+(x=5,10,15,20)中,随着Eu3+掺入量的增加,发光从绿光区进入白光区。同时观察到Tb3+到Eu3+的有效能量传递。     

GdPO4∶Eu3+和GdPO4∶Ce3+,Tb3+纳米晶多元醇法的合成与表征

首次采用多元醇的方法合成了GdPO4:Eu3+和GdPO4:Ce3+,Tb3+纳米晶,并利用X-射线衍射(XRD),傅立叶变换红外光谱(FTIR),透射电镜(TEM),光致发光光谱(PL)及热重和差示扫描量热分析(TG-DSC)对产物进行了表征.结果表明,产物为单斜晶系独居石结构正磷酸盐;形貌为梭形,长轴600～700 nm,短轴50～200 nm;纳米晶在水中有良好的分散性.GdPO4:Eu3+水溶液在251 nm激发下.发射光谱以Eu3+的5D0-7F1 (592 nm)磁偶极跃迁强度最大;GdPO4:Ce3+,Tb3+纳米晶水溶液的激发光谱在240～300nm处有一宽的吸收带,峰值位于262 nm,为Ce3+离子的4f-5d跃迁吸收,发射光谱呈现Tb3+特征绿色发射,最强峰位于544 nm.讨论了GdPO4:Ce3+,Tb3+体系中敏化发光机理,通过光谱分析证实了存在Ce3+→Gd3+→Tb3+的能量传递过程.     

氧分压对ZnO:Eu~(3+),Li~+薄膜结构和光学性质的影响

利用脉冲激光沉积(PLD)法在Si(111)衬底上制备了ZnO:Eu~(3+),Li+薄膜,分别通过XRD谱和光致发光(PL)谱测试研究了氧分压不同时薄膜结构和发光性质。XRD谱研究表明,所有样品均仅出现ZnO基质的(002)衍射峰,说明Eu~(3+)已进入ZnO基质晶格,没有单独形成结晶氧化物。PL谱研究表明,当用325 nm的光激发样品时,样品的发光仅由ZnO基质的紫外发光和绿光发射组成,没有出现稀土Eu~(3+)的特征发光峰。当用395 nm的光激发样品时,在594和613 nm处出现两个明显的Eu~(3+)特征发光峰,分别属于Eu~(3+)的磁偶极跃迁(~5D_0→~7F_1)和电偶极跃迁(~5D_0→~7F_2),而且随着氧压的增加,594 nm处的发光峰强度变化不大,但613 nm处的发光峰强度明显增强。     

快速合成宽带激发、窄带发射白光LED用Li2CaSiO4∶Eu2+蓝-绿荧光粉

采用微波辅助法合成了蓝-绿色荧光粉Li2CaSiO4∶Eu2+,该荧光粉能很好的与紫外光及蓝光LED匹配。分别采用X射线衍射(XRD)、扫描电镜(SEM)和激发-发射光谱(PLE/PL)对样品进行了表征。X射线衍射数据与标准卡片PDF#27-290很好吻合。扫描电镜测试表明样品粒径在2~5μm。在紫外光和蓝光激发下,Li2CaSiO4∶1%Eu2+发射主峰位于478 nm,对应于Eu2+的t2g→8S7/2电子跃迁,半高峰宽31 nm。样品发光性能与Eu2+掺杂浓度有关,且Eu2+的最佳掺杂浓度为1%。合成的样品色坐标为(0.09,0.24),可作为白光LED用蓝-绿色荧光材料。     

Sr2SiO4:Eu3+发光材料的制备及其光谱特性

采用溶胶-凝胶法制备了Sr2SiO4:Eu3+发光材料. 测量了Sr2SiO4:Eu3+材料的激发与发射光谱, 发射光谱主峰位于618 nm处;监测618 nm发射峰时, 所得激发光谱主峰分别为320、397、464 和518 nm. 研究了Sr2SiO4:Eu3+材料在618 nm的主发射峰强度随Eu3+浓度的变化情况. 结果显示, 随Eu3+浓度的增大, 发射峰强度先增大; 当Eu3+浓度为7%时(x), 峰值强度最大; 而后随Eu3+浓度的增大, 峰值强度减小. 在Eu3+浓度为7%的情况下, 研究了电荷补偿剂Li+的掺杂浓度(x(Li+))对Sr2SiO4:Eu3+材料发射光谱强度的影响. 结果显示, 随x(Li+)的增大, 材料发射光谱强度先增大后减小, 当x(Li+)为8%时, 峰值强度最大.     

Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.     

Gd3Ga5O12∶Eu3+发光纳米晶的燃烧合成及性质

以尿素为燃烧剂,乙二醇为分散剂采用燃烧法制备了Gd3Ga5O12∶Eu3+纳米晶。利用X射线衍射、电镜和荧光光谱对前驱体和热处理后样品的结构、形貌和发光性能进行了表征。XRD结果表明:700℃热处理2 h即可获得立方结构Gd3Ga5O12∶Eu3+纳米晶。根据Scherrer公式估算经700℃和900℃热处理2 h获得的纳米晶的一次性粒径分别为28 nm和42 nm。发射光谱和激发光谱的结果表明:特征发射峰来自于5D0-7FJ跃迁,而来自于Eu3+的5D0→7F1的磁偶极跃迁发射最强;宽激发带主要来自于Eu-O电荷迁移带和Gd3Ga5O12基质吸收。发射强度和激发强度随热处理温度的提高而增强。     

ZnO纳米棒薄膜的湿化学法制备及光致发光特性

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.     

Tunable photoluminescent and cathodoluminescent properties of ZnO and ZnO:Zn phosphors

ZnO and ZnO:Zn powder phosphors were prepared by the polyol-method followed by annealing in air and reducing gas, respectively. The samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectra (XPS), electron paramagnetic resonance (EPR), and photoluminescence (PL) and cathodoluminescence (CL) spectra, respectively. The results indicate that all samples are in agreement with the hexagonal structure of the ZnO phase and the particle sizes are in the range of 1-2 microm. The PL and CL spectra of ZnO powders annealed at 950 degrees C in air consist of a weak ultraviolet emission band (approximately 390 nm) and a broad emission band centered at about 527 nm, exhibiting yellow emission color to the naked eyes. When the sample was reduced at the temperatures from 500 to 1050 degrees C, the yellow emission decreased gradually and disappeared completely at 800 degrees C, whereas the ultraviolet emission band became the strongest. Above this temperature, the green emission ( approximately 500 nm) appeared and increased with increasing of reducing temperatures. According to the EPR results and spectral analysis, the yellow and green emissions may arise from the transitions of photogenerated electron close to the conduction band to the deeply trapped hole in the single negatively charged interstitial oxygen ion (Oi(-)) and the single ionized oxygen vacancy (V.O) centers, respectively.     

橙红色荧光粉BaZnP2O7∶Eu3+的制备与发光特性

采用高温固相法合成了BaZnP2O7∶Eu3+荧光粉, 并对其发光性质进行了研究.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Y202S:Eu3+,Bi3+ Phosphor

As an Hg-free lamp using phosphor,the Bi3+ and Eu3+ co-doped Y2O2S phosphors were prepared and their luminescence properties under vacuum uitraviolet(VUV) excitation were investigated.The VUV photolumineseent intensity of Y2O2S:Eu3+ was weak,however,considerably stronger red emission at 626 nm with good color purity was observed in Y2O2S:Eu3+,Bi3+ systems.Investigation on the photoluminescence reveals that the strong VUV luminescence of Y2O2S:Eu3+,Bi3+ at 147 nm is mainly because the Bi3+ acts as a medium and effectively performs the energy transfer process: Y3+-O2→Bi3+→Eu3+,while the intense emission band at 172 nm is attributed to the absorption of the characteristic 1So-1P1 transition of Bi3+ and the direct energy transfer from Bi3+ to Eu3+.The Y2O2S:Eu3+,Bi3+ shows excellent VUV optical properties compared with the commercial (Y,Gd)BO3:Eu3+.Thus,the Y2O2S:Eu3+,Bi3+ can be a potential red VUV-excited candidate applied in Hg-free lamps for backlight of liquid crystal display.     

Preparation, characterization and photoluminescence properties of BaB2O4: Eu3+ red phosphor

A new red emitting BaB2O4: Eu3+ phosphor was synthesized by solid-state reaction method. X-ray powder diffraction (XRD) analysis confirmed the monoclinic formation of BaB2O4. Field-emission scanning electron-microscopy (FE-SEM) observation indicated that the microstructure of the phosphor consisted of irregular grains with heavy agglomerate phenomena. Upon excitation with 394 nm light, the BaB2O4: Eu3+ phosphor shows bright red emissions with the highest photoluminescence (PL) intensity at 611 nm due to 5D0→7F2 transitions of Eu3+ ions. The CIE chromaticity coordinates are calculated from the emission spectrum to be x=0.64, y=0.35. The effects of the Eu3+ concentration on the PL were investigated. The results showed that the optimum concentration of Eu3+ in BaB2O4 host is 6 mol% and the dipole-dipole interaction plays the major role in the mechanism of concentration quenching of Eu3+ in BaB2O4: Eu3+ phosphor. The effect of charge compensation on the emission intensity was also studied. The charge compensations of Li+, Na+ and K+ anions all increased the luminescent intensity of BaB2O4: Eu3+. K+ anion gave the best improvement to enhance the intensity of the emission, indicating K+ is the optimal charge compensator. All properties show that this phosphor could serve as a potential candidate for application as a red phosphor for NUV chip LED.     

棒状LaF3∶Eu3+纳米晶的制备与发光性能

采用一种简单的液相反应法在室温下合成了棒状的LaF3∶Eu3+纳米晶, 对其结构和发光性能进行了表征. XRD分析结果表明, 室温下即可得到结晶良好的六方晶相的LaF3, 灼烧之后样品的衍射峰增强, 没有杂相产生. TEM照片表明, 棒状LaF3∶Eu3+纳米材料的直径为8 nm左右, 长度达到50 nm. 荧光光谱表明, 室温下合成的棒状LaF3∶Eu3+纳米晶的最强发射峰位于589 nm, 对应于Eu3+的5D0-7F1跃迁发射, 说明Eu3+占据LaF3基质中La3+晶格点的C2对称格位上. 同时Eu3+的猝灭摩尔分数为5%, 荧光寿命随着灼烧温度的升高而延长.