Luminescence study of γ-ray and C5+ ion beam-irradiated LiCaBO3:Cu phosphor

Cu-doped LiCaBO₃ phosphors were prepared by modified solid-state synthesis and the formation of compound was confirmed by X-ray diffraction study. LiCaBO₃:Cu⁺ (Cu?=?0.02, 0.05, 0.1 and 0.2?mol%) were studied for photoluminescence (PL) study and prominent PL emission spectra were obtained for Cu⁺ with transition ³d₉⁴s₁?→?³d₁₀. The phosphors were further studied by thermoluminescence (TL) property for exposure to γ-ray irradiation of 1.2?rad with ¹³⁷Cs source. TL of LiCaBO₃:Cu was also studied for C⁵⁺ (3.75?×?10¹²?ion?cm^?2) beam irradiation for 1?min exposure time. Trapping parameters (activation energy and frequency factor) for single deconvoluted peaks were obtained by Chen's peak shape method.     

Influences of Mg^2＋ ion on dopant occupancy and upconversion luminescence of Ho^3＋ ion in LiNbO3 crystal

The effects of a Mg^2＋ ion on the dopant occupancy and upconversion luminescence of a Ho^3＋ ion in LiNbO3 crystal are reported. The birefringence gradient of the crystal is measured to investigate the optical homogeneity. The X-ray powder diffraction spectrum and the upconversion luminescence are used to investigate defect structure and spectroscopic properties of Mg,Ho：LiNbO3. Under 808-nm excitation, blue, red, and very intense yellow-green bands are observed. Based on the energy levels of Ho^3＋ in LiNbO3, and the pump intensity dependence of the observed emission, an excitation scheme is presented. The upconversion emission spectra reveal an enhancement of upconversion intensity when the Mg^2＋ ions are introduced into Ho：LiNbO3. The main upconversion mechanism is discussed in this work.     

Controlled synthesis and analysis of He–H+3 in a 3.7 K ion trap

Complexes of the triatomic hydrogen ion with helium were synthesised in a low-temperature 22-pole rf ion trap at He number densities of up to 10¹⁶ cm^?3. Absolute ternary rate coefficients for sequentially attaching He atoms have been determined from the growth of complexes with increasing storage time. The number of helium-tagged ions is significantly reduced when increasing the nominal temperature from 4 to 25 K. Competition between attachment and dissociation via collisions leads to stationary He_n–H⁺₃ (n up to 9) distributions. State-specific excitation of the trapped H⁺₃ ions via IR transitions significantly reduces the formation of complexes. Tuning the laser to Δv₂ = 1 transitions in the range of 2726 cm^?1 leads to LIICG lines, i.e., to spectra caused by laser-induced inhibition of complex growth. In addition, almost 100 lines have been found between 2700 and 2765 cm^?1, which are attributed to laser-induced dissociation of the in situ formed He–H⁺₃ complex ions. These lines are not yet assigned; however, their absorption strength, statistics and predissociation lifetimes provide interesting information on both the stable complexes as well as on scattering resonances in low-energy H⁺₃+He collisions. New calculations of the potential energy surface will help to analyse the dissociation spectrum. There are some indications that para-H⁺₃ is enriched under the conditions of the present experiment.     

Effect of 30 Mev Li 3+ ion and 8 MeV electron irradiation on n-channel MOSFETs

The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C.     

Temperature and frequency dependent electrical properties of 50 MeV Li3+ ion irradiated polymeric blends

The polymeric blends of polyvinyl chloride (PVC) and polyethylene terephthalate (PET) with equal composition by weight have been irradiated with 50 MeV Li³⁺ ions at different fluences. The AC electrical properties of polymeric blends were measured in the frequency range 0.05–100 kHz, and at temperature range 40–150 ^°C using LCR meter. There is an exponential increase in conductivity with log of frequency and effect is significant at higher fluences. The value of tan δ and dielectric constant are observed to change appreciably due to irradiation. The loss factor (tan δ) versus frequency plot suggests that the capacitors of polymeric blend of PVC and PET may be useful below 10 kHz. No change in dielectric constant was observed over a wide temperature range up to 150 ^°C. Thermal stability was studied by thermogravimetric analysis. Thermal analysis revealed that chain scission is the dominant phenomena in the polymeric blends resulting in the reduction of its thermal stability. It appears from differential scanning calorimetry studies that the melting temperature decreases as fluence increases. FTIR spectra measurements also revealed that the material suffered severe degradation through bond breaking beyond the fluence of 2.3×10¹³ ions/cm².     

Non-Born-Oppenheimer study of the muonic molecule ion 4Heμ^+

Accurate non-Born-Oppenheimer variational calculations of all bound states of the positive muon molecular ion 4Heμ^+ have been performed using explicitly correlated Gaussian functions in conjunction with the global vectors.All the energies obtained are accurate in the order of 10-6 Hartree(1 Hartree=27.2114 eV).Compared with the binding energies obtained from calculations based on the Born-Oppenheimer potential with the mass-weighted adiabatic corrections(Chem.Phys.Lett.110487(1984)),the largest relative deviation is up to 15%.By analyzing the average interparticle distances and possibility distributions of interparticle distances of this system,it is confirmed that the Born-Oppenheimer approximation is reasonable for this system and that 4Heμ^+ can be regarded as a system of positive muon bound to a slightly distorted helium atom.     

Surface enhancement of molecular ion H_2~+ yield in a 2.45-GHz electron–cyclotron resonance ion source

High current hydrogen molecular ion beam is obtained with a specially designed stainless steel liner permanent magnet2.45-GHz electron–cyclotron resonance(ECR) ion source(PMECR II) at Peking University(PKU). To further understand the physics of the hydrogen generation process inside a plasma chamber, theoretical and experimental investigations on the liner material of the plasma chamber in different running conditions are carried out. Several kinds of materials, stainless steel(SS), tantalum(Ta), quartz, and aluminum(Al) are selected in our study. Experimental results show that stainless steel and tantalum are much better than others in H~+_2 generation. During the experiment, an increasing trend in H~+_2 fraction is observed with stainless steel liner after O_2 discharge inside the ion source. Surface analyses show that the roughness change on the surface after O_2 discharge may be responsible for this phenomenon. After these studies, the pure current of H~+_2 ions can reach 42.3 mA with a fraction of 52.9%. More details are presented in this paper.     

Sensing of Zn2+ion by N-Furfurylsalicylaldimine Based on CHEF Process†

The recognition ability of N-Furfurylsalicylaldimine (HL) toward various cations (Pb²⁺, Hg²⁺, Ba²⁺, Cd²⁺, Ag⁺, Zn²⁺, Cu²⁺, Ni²⁺, Co²⁺, K⁺, Sr²⁺, and Na⁺) has been studied by UV–Vis and fluorescence spectroscopy. The compound showed highly selective fluorescence signaling behaviour for Zn²⁺ ions in methanol-water medium based on CHEF process and is capable of distinguishing Zn²⁺ from Cd²⁺ ion. From single crystal X-ray analysis it is revealed that a Zn²⁺ ion binds two ligand molecules through imine nitrogen and phenolate oxygen atom.

Influence of ion–ion correlation on Na+ transport in Na2Ni2TeO6: molecular dynamics study

Molecular dynamics (MD) study of Na⁺ transport in Na₂Ni₂TeO₆ is performed systematically with varying strength of Na⁺–Na⁺ short range repulsions to understand the physical principle governing ion transport mechanism. Na⁺ diffusion is enhanced by nearly an order of magnitude with reduced Na⁺–Na⁺ short range repulsion within the studied range. A similar behavior is also observed in other systems, e.g., AgI and Na₂Zn₂TeO₆, where mobile ions are located closely. The Na⁺ ion occupancy in Na₂Ni₂TeO₆ shows a significant shift from Na1 to Na2 sites gaining some degree of correlation. The study also emphasizes how mobile ion size influences the ionic diffusion. The fresh insight such as microscopic migration pathways, energy barriers, and jumping mechanism of Na⁺ are derived from the study.     

Study of SHI-induced ion beam mixing in Y3+: YIG employing X-ray diffraction and Mössbauer spectroscopy

The consequences of swift heavy ion (SHI) irradiation (Li^3?+?, 50 MeV, fluence =?5 × 10¹³ ions/cm²) on the structural and microscopic magnetic properties of Y^3?+?-substituted yttrium iron garnet (Y_3?+?x Fe_5???x O₁₂, x = 0.0, 0.2 and 0.4) have been studied at 300 K. It is found that an additional YFeO₃-phase observed along with bcc garnet phase, is completely removed for x = 0.2 composition while its percentage formation considerably reduces for x = 0.4 composition after irradiation. Similar effect has been observed for specimens sintered at 1,500°C. The SHI-induced ion beam mixing has been revealed through X-ray diffraction and Mössbauer spectroscopy.     

Nuclear fusion rates from resonant states of 3Hedμ molecular ion

We present new theoretical calculations of nuclear fusion rates λ _f ^J from the resonant states of the muonic molecular ion ³Hedμ ⁺⁺ with total angular momenta J=0,1. As a byproduct, new very accurate variational wave functions for these states have been obtained. Using these wave functions, the probability density |Ψ(R=0)|² in a fusion region has been calculated by extrapolating the variational solution to small internuclear distances by means of the multi-channel adiabatic solution. Calculated fusion rates for the states J=0 and J=1 are: λ _f ⁰ =1.9·10⁵s^-1 and λ _f ¹ =0.65·10³s^-1, respectively. This revised version was published online in August 2006 with corrections to the Cover Date.     

Influence of 120 MeV Si9+ ion irradiation on ZnTe semiconductor thin films

ABSTRACT

ZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120?MeV Si⁹⁺ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1?×?10¹¹ ions cm^?2. However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31?eV (pristine) to 2.17?eV after irradiation of Si⁹⁺ ions.     

Monomode channel waveguide in KTiOPO4 crystal produced by Rb+ ion exchange combined with Si+ ion implantation

A novel ion exchanged channel KTiOPO₄ waveguide formation technique is introduced, which can avoid a metal mask being dissolved in an ion exchanged molten salt. Rb⁺ ion exchange (340°C, 30 min) was first applied to a KTP sample to produce a planar waveguide substrate, and then Si⁺ ion implantation (3.0 MeV and 1.5 MeV with doses of 1×10¹⁵ ions/cm² and 6×10¹⁴ ions/cm², respectively) was carried out to construct channel stripes on the planar waveguide surface that has been deposited by a specially designed photoresist mask. The two-dimensional cross sectional refractive index profile of the channel waveguide was reconstructed by considering the shape of the channel waveguide as well as the index distribution of the planar waveguide.     

Visible luminescence properties of Er3+–Dy3+ codoped tellurite glasses

Er³⁺ and Dy³⁺ codoped tellurite glasses have been synthesized. Five emission bands in the PL spectrum under 325 nm pumping were observed. Three of them correspond to Er³⁺ and the other two correspond to Dy³⁺, respectively. The PL spectrum revealed that the intensity of Dy³⁺ characteristic emission was enhanced as Er³⁺ concentration increased while keeping Dy³⁺ concentration constant. Due to small mismatch between the energy level of Er³⁺:⁴F_7/2 and Dy³⁺:⁴F_9/2 resonant energy was possibly transferred between them. This process can give rise to an enhancement of the PL intensity of 484 and 574 nm from Dy³⁺. The PL spectra of these glasses cover the blue, green and red wavelength range and the intensities of those emission bands could be controlled by adjusting the concentration of relevant rare-earth ions. These glasses with the controllable CIE coordinates might be a potential candidate for the widely realistic application such as solid-state white lighting and multicolor display.     

Scheme for teleportation of unknown states of trapped ion

A scheme is presented for teleporting an unknown state in a trapped ion system. The scheme only requires a single laser beam. It allows the trap to be in any state with a few phonons, e.g. a thermal motion. Furthermore, it works in the regime, where the Rabi frequency of the laser is on the order of the trap frequency. Thus, the teleportation speed is greatly increased, which is important for decreasing the decoherence effect. This idea can also be used to teleport an unknown ionic entangled state.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

A tentative multiphoton ionization of CS2 molecule: Spectroscopy of Ã2πu state of CS 2 + ion

The spectroscopic study of excited molecular cationCS ₂ ⁺ (òπ_u ) by a different method is presented. In this technique the decay of excited states is monitored by measuring the photons emitted. The peaks in the photon spectrum would correspond to the energy levels of the ion. The vibrational-vibrational, vibrational-electronic interactions have been observed. Symmetry forbidden excitation of one quantum of bending vibration is observed which gives unperturbed value for the bending vibration. The Renner-Teller splitting for the δ_g and Σ _g ^- components of the bending mode (v ₂ ^′ = 1) in the upper excited òπ_u state has been observed. A tentative vibrational analysis of the Ã→ X system has been made.     

Angular dependence of the superexchange interaction Fe3+-O2−-Cr3+

The super-exchange interaction parametersI(Fe, Cr) of Fe³⁺ and Cr³⁺ in iron doped rate-earth orthochromitesRCr_0.99Fe_0.01 O₃ (R=La, La_0.5Nd_0.5, Nd, Sm, Gd, Dy, Y, Er, Yb or Lu) have been obtained from⁵⁷Fe magnetic hyperfine structure measurementsvia the Mössbauer effect.The dependence of the experimental valuesI(Fe, Cr) on the Fe–O–Cr average superexchange angle (depending upon the relative size of the rare-earth (RE) ionR ³⁺) is well described by the equationI(d⁵, d ^N ) = _N + _N cos + _N cos² .Within the accessible range of super-exchange angles 142°156°, the Fe³⁺–O^2––Cr³⁺ interaction is negative (antiferromagnetic). However, a theoretical analysis predicts a sign reversal forI(Fe, Cr.) at about 162° and thus ferromagnetic character of the interaction between 162° and 180°.The spin-only super-exchange interaction integrals fore _g andt _2g electrons, separately, are also calculated. Their angular dependence is accounted for by the behaviour of the antiferromagnetic kinetic and ferromagnetic potential exchange which are of different character when passing from 180° to 90° super-exchange geometry. The magnitude and the sign of the spin-only super-exchange integral for an arbitrary 3d cation, pair is predicted.     

AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams

Ion beam nitridation of Si(100) as a function of N⁺₂ ion energy in the range of 2–10 keV has been investigated by in-situ Auger electron spectroscopy (AES) analysis and Ar⁺ depth profiling. The AES measurements show that the nitride films formed by 4–10 keV N⁺₂ ion bombardment are relatively uniform and have a composition of near stoichiometric silicon nitride (Si₃N₄), but that formed by 2 keV N⁺₂ ion bombardment is N-rich on the film surface. Formation of the surface N-rich film by 2 keV N⁺₂ ion bombardment can be attributed to radiation-enhanced diffusion of interstitial N atoms and a lower self-sputtering yield. AES depth profile measurements indicate that the thicknesses of nitride films appear to increase with ion energy in the range from 2 to 10 keV and the rate of increase of film thickness is most rapid in the 4–10 keV range. The nitridation reaction process which differs from that of low-energy (< 1 keV) N⁺₂ ion bombardment is explained in terms of ion implantation, physical sputtering, chemical reaction and radiation-enhanced diffusion of interstitial N atoms.