Ferromagnetic features of zero-bias conductance peaks in a ferromagnet/insulator/superconductor junction

We present a general formula for tunneling conductance in ballistic ferromagnet/ferromagnetic insulator/superconductor junctions where the superconducting state has the opposite spin pairing symmetry. The formula shows, correctly, that ferromagnetism has been induced by the effective mass difference between up- and down-spin electrons. This effectively mass mismatched ferromagnet and a standard Stoner ferromagnet have been employed in this paper. As an application of the formulation, we have studied the tunneling effect for junctions including a spin-triplet p-wave superconductor, where we choose a normal insulator for the insulating region, although our formula can be used for a ferromagnetic insulator. Then, we have been able to devote our attention to features of a ferromagnetic metal. The conductance spectra show a clear difference between the two ferromagnets depending upon the method of normalization of the conductance. In particular, an essential difference is seen in the zero-bias conductance peaks, reflecting the characteristics of each ferromagnet. From the obtained results, we suggest that the measurements of the tunneling conductance in the junction provide us with useful information about the mechanism of itinerant ferromagnetism in metals.     

Tunneling Conductance and Magnetoresistance in Ferromagnet/Ferromagnet/d-Wave Superconductor Double Tunnel Junctions

The tunneling conductance and tunneling magnetoresistance (TMR) are investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave superconductor (FM/I/FM/I/d-wave SC) structures by applying an extended Blonder-Tinkham-Klapwijk (BTK) approach. We study the effects of the exchange splitting in the FM, the magnetic impurity scattering in the thin insulator interface of FM/I/FM, and noncollinear magnetizations in adjacent magnetic layers on the TMR. It is shown (1) that the tunneling conductance and TMR exhibit amplitude-varying oscillating behavior with exchange splitting, (2) that with the presence of spin-flip scattering in insulator interface of FM/I/FM, the TMR can be dramatically enhanced, and (3) that the TMR depends strongly on the angle between the magnetization of two FMs.     

Nonlocal transport properties of topological insulator F/I/SC/I/F junction with perpendicular magnetization

We investigate theoretically the nonlocal transport properties in a ferromagnet/insulator/superconductor/insulator/ferromagnet (F/I/SC/I/F) junction with perpendicular magnetization formed on a topological insulator. The nonlocal conductance through the junction depends strongly on whether the perpendicular magnetizations of the two ferromagnets are in a parallel or an antiparallel alignment. This stems from the fact that on the surface of three dimensional topological insulator the exchange field acts as vector potential and from spin-momentum locking property of the topological insulator surface states. It is found that the nonlocal conductance as a function of barrier strength of the I regions exhibits a quantum switch on-off property.     

NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导和隧穿磁电阻

在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层，FI为铁磁绝缘体或半导体层)的基础上，我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上，利用转移矩阵方法，对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明，在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值. 关键词： 双自旋过滤隧道结 隧穿磁电阻 非磁绝缘(半导)体间隔层     

量子线/绝缘层/p波超导体结的隧道谱

用Bogoliubov-de Gennes方程来研究量子线/绝缘层/p波超导体结(q/I/p)中的准粒子输运过程，利用推广的Blonder，Tinkham和Klapwijk模型计算绝对零度和有限温度下q/I/p的一级谐波隧道谱.和量子线/绝缘层/d波超导体结的一级谐波隧道谱不同的是q/I/p的一级谐波隧道谱中存在零偏压电导峰.随着q/I/p中绝缘层的势垒散射增强，q/I/p的一级谐波隧道谱中零偏压电导峰变高.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

Differential conductance in normal-metal/insulator/metal/d-wave superconductor junction carrying a supercurrent

This paper applies the Bogoliubov--de Gennes equation and the Blonder--Tinkham--Klapwijk approach to study the oscillatory behaviour of differential conductance in a normal metal/insulator/metal/d-wave superconductor junction carrying a supercurrent I_s. We find that (i) a three-humped structure appears at a nearly critical supercurrent I_s and z ≈ 0.5 for the normal metal/insulator/metal/d_x² + y²-wave superconductor junction; (ii) the zero-bias conductance peak splits into two peaks with sufficiently large applied current for the normal metal/insulator/metal/d_xy-wave superconductor junction; (iii) the conductance spectrum exhibits oscillating behaviour with the bias voltage and the peaks of the resonances are suppressed by increasing supercurrent I_s.     

Conductance in normal metal/insulator/ferromagnetic superconductor tunnel junctions

In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes equation for a ferromagnetic superconductor (FS). In the framework of the Blonder-Tinkham-Klapwijk model, we present the differential conductance of the normal metal/insulator/FS junctions. It is shown that the exchange energy h in the FS can lead to the Zeeman splitting of the conductance peaks and the energy difference between the two splitting peaks is equal to 2h. The observation of such Zeeman splitting in the conductance spectrum can be taken as evidence for the coexistence between superconductivity and ferromagnetism.     

Ferromagnetic insulator effects in ferromagnetic semiconductor/ferromagnetic insulator/p-wave superconductor junctions

The effect of the ferromagnetic insulator on tunneling conductance in ferromagnetic semiconductor/ferromagnetic insulator/p-wave superconductor (FS/FI/P) junctions is studied based on a scattering theory. Three kinds of pairings for the P side are chosen: p_x, p_{y ,}p_x+ip_y waves. It is shown that the spin filtering effect originating from the exchange field in the FI strongly modifies the normalization conductance. Many novel features including the zero-bias conductance dip and splitting are exhibited for fixed spin polarization in the FS. The tunneling spectrum for the heavy holes is much different from that for the light holes due to the different mismatches in the effective mass and Fermi velocity between FS and P.     

Tunneling transport in topological insulator normal metal/insulator/d-wave superconductor junctions

We investigate the tunneling conductance in a normal metal/insulator/d-wave superconductor (NM/I/d-wave SC) junction with a barrier of thickness d and with an arbitrary gate voltage V(0) applied across the barrier region, formed on the surface of a topological insulator, using the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk?(BTK) formalism. We find that the tunneling conductance as a function of both d and V(0) displays an oscillatory behavior whose amplitude decreases with increase of V(0). We also find that when the Andreev resonant condition is met, the tunneling conductance approaches a maximum value of 2G(0), independent of the gate voltage V(0).     

Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass

We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, relativistic mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced relativistic mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced relativistic mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.     

Tunneling Conductance in Normal Metal/Insulator/Triplet Superconductor Junction

Tunneling conductance in normal metal/insulator/triplet superconductor junctions is studied theoretically as a function of the bias voltage at zero temperature and finite temperature. The results show there are zero-bias conductance peak, zero-bias conductance dip and double-minimum structures in the spectra for p-wave superconductor junctions. The existence of such structures in the conductance spectrum can be taken as evidence that the pairing symmetry of Sr2RuO4 is p-wave symmetry.     

Shot Noise in Ferromagnetic Superconductor Tunnel Junctions

In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes (BdG) equation for a ferromagnetic superconductor (FS). Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normal-metal insulator ferromagnetic superconductor junction. It is shown that the exchange energy E_h in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2E_h. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.     

Tunneling Conductance in Normal Metal/Insulator/Triplet Superconductor Junction

Tunneling conductance in normal metal/insulator/triplet superconductor junctions is studied theoretically as a function of the bias voltage at zero temperature and finite temperature. The results show there are zero-bias conductance peak, zero-bias conductance dip and double-minimum structures in the spectra for p-wave superconductor junctions. The existence of such structures in the conductance spectrum can be taken as evidence that the pairing symmetry of Sr2RuO4 is p-wave symmetry.     

铁磁绝缘层对正常金属/铁磁绝缘层/正常金属/p波超导结隧道谱的影响

在正常金属/铁磁绝缘层/正常金属/自旋三重态p波超导隧道结中,考虑到铁磁绝缘层的磁散射和粗糙界面散射,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了铁磁绝缘层对隧道结微分电导的影响.研究表明:(1)对于px波,粗糙界面散射和磁散射都能使零偏压电导峰变低,能隙处凹陷升高;随着磁散射的增强,谱线的尖锐峰消失,宽峰逐渐变为凹陷;(2)对于py波,粗糙界面散射和磁散射都能使零能凹陷上移,能隙峰变低,随着粗糙界面散射的增强,两能隙峰间距减小;随着中间正常金属层厚度的增加,能隙内电导随外加偏压呈现振荡行为,能隙外电导仅与普通势垒有关;(3)对于px+ipy波,随着粗糙界面散射的增强,零偏压电导峰被压低,双凹陷处的值逐渐增大为小的能隙峰,而磁散射并不改变谱线中各凹陷处的电导值.     

N/I/d波超导体c轴隧道结的微分电导

以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究.结果表明:在N/I/d波超导体c轴隧道结的隧道谱中存在V型结构、能隙外的凹陷和小的零偏压电导峰.这一结果能很好的解释相关的实验现象.     

金属-绝缘层-铁磁/超导结的隧道谱与散粒噪声

通过求解Bogoliubov-de Gennes(BdG)方程,利用推广的Blonder-Tinkham-Klapwijk(BTK)的理论,计算了金属-绝缘层-铁磁／超导态(N／L／FS)结的微分电导、平均电流和散粒噪声功率．研究表明：铁磁超导态中的磁交换能能使微分电导峰产生Zeeman劈裂,劈裂峰的能量问隔为2Eh,结界面势垒散射抑制隧道结的微分电导、平均电流和散粒噪声功率．     

正常金属/自旋三重态p波超导体结隧道谱的奇异性

利用Blonder，Tinkham和Klapwijk理论计算了正常金属/绝缘层/正常金属/自旋三重态的p波超导体结的隧道谱和平均电流.计算结果表明：在自旋三重态p波超导结的隧道谱中存在零偏压电导峰、零偏压电导凹陷和双凹陷结构，并有微分电导随偏压震荡的现象出现，在I-V曲线上出现电流台阶.这些结果在理论上支持Sr₂RuO₄的超导态是自旋三重态p波超导态. 关键词： 自旋三重态超导体 p波超导体 隧道谱     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Universal behaviors of magnon-mediated spin transport in disordered nonmagnetic metal-ferromagnetic insulator heterostructures

We numerically investigate magnon-mediated spin transport through nonmagnetic metal/ferromagnetic insulator (NM/FI) heterostructures in the presence of Anderson disorder, and discover universal behaviors of the spin conductance in both one-dimensional (1D) and 2D systems. In the localized regime, the variance of logarithmic spin conductance σ²(lnG_T) shows a universal linear scaling with its average ⟨lnG_T⟩, independent of Fermi energy, temperature, and system size in both 1D and 2D cases. In 2D, the competition between disorder-enhanced density of states at the NM/FI interface and disorder-suppressed spin transport leads to a non-monotonic dependence of average spin conductance on the disorder strength. As a result, in the metallic regime, average spin conductance is enhanced by disorder, and a new linear scaling between spin conductance fluctuation rms(G_T) and average spin conductance G_T is revealed which is universal at large system width. These universal scaling behaviors suggest that spin transport mediated by magnon in disordered 2D NM/FI systems belongs to a new universality class, different from that of charge conductance in 2D normal metal systems.