Photovoltaic Characteristic of La0.7Sr0.3MnO3/ZnO p-n Heterojunction

We report on the photovoltaic properties of Lao.7Sro.3MnO3//ZnO heterojunction fabricated by pulsed laser deposition methods. Nanosecond photovoltaic pulses are observed in this junction in the wavelength range from ultraviolet-visible to infrared. A qualitative explanation is presented, based on an analysis of the photovoltaic signals of p-n heterojunction.     

Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers

ZnO/ZnGa₂O₄ composite layers were synthesized by simple thermal oxidation of ZnS substrates with gallium in the air. The continuous-wave and time-resolved photoluminescence measurements for the composites were performed at room temperature. It is found that the visible deep level emission from ZnO in ZnO/ZnGa₂O₄ composite layer was almost suppressed. In addition, the UV emission with long lifetime was also observed in comparison with that of pure ZnO layer without ZnGa₂O₄.     

Aqueous synthesis and enhanced photocatalytic activity of ZnO/Fe2O3 heterostructures

We report a facile synthesis of ZnO/Fe₂O₃ heterostructures based on the hydrolysis of FeCl₃ in the presence of ZnO nanoparticles. The material structure, composition, and its optical properties have been examined by means of transmission electron microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and diffuse reflectance UV–visible spectroscopy. Results obtained show that 2.9 nm-sized Fe₂O₃ nanoparticles produced assemble with ZnO to form ZnO/Fe₂O₃ heterostructures. We have evaluated the photodegradation performances of ZnO/Fe₂O₃ materials using salicylic acid under UV-light. ZnO/Fe₂O₃ heterostructures exhibited enhanced photocatalytic capabilities than commercial ZnO due to the effective electron/hole separation at the interfaces of ZnO/Fe₂O₃ allowing the enhanced hydroxyl and superoxide radicals production from the heterostructure.     

Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width

Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D⁰X, and D⁰X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an ‘S’-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively.     

Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube

We have demonstrated the crystalline ZnO-Al₂O₃ core-shell nanowire structure by atomic layer deposition (ALD) at a temperature 100 °C. The core-shell structure could have potential applications in the fabrication of ZnO field effect transistor. After dissolving the ZnO core, shape defined, rigid and robust crystalline Al₂O₃ shelled nanostructures have been fabricated. Nanowire ZnO nanostructures have been replicated by alumina shell. This is one of the most effective techniques for producing core-shell or shell/hollowed nanostructures of any desired objects. The Al₂O₃ shelled nanostructures could have potential applications as space confined nanoreactors, drug delivery, nanofluidic channels and optical transmitting.     

Synergistic effect of efficient adsorption g-C3N4/ZnO composite for photocatalytic property

Novel g-C₃N₄/ZnO composite photocatalyst was synthesized from an oxygen-containing precursor by direct thermal decomposition urea in air without any other templates assistance. Different percentages of g-C₃N₄ were hybridized with ZnO via the monolayer-dispersed method. The prepared g-C₃N₄/ZnO composites were characterized by XRD, SEM, UV–vis diffuse reflectance spectra (DRS), FT-IR, TEM and XPS. The composites showed much higher efficiency for degradation of Rhodamine B (RhB) than ZnO under UV and visible light irradiation. Especially, the photocatalytic efficiency was the highest under UV light irradiation when the percentage of g-C₃N₄ was 6%. The improved photocatalytic activity may be due to synergistic effect of photon acquisition and direct contact between organic dyestuff and photocatalyst. Then, effective separation of photogenerated electron–hole pairs at the interface of g-C₃N₄ is an important factor for improvement of photocatalytic activity. This work indicates that g-C₃N₄ hybrid semiconductors photocatalyst is a promising material in pollutants degradation.     

Optical properties of oxide magnetic ZnO, Zn0.95Mn0.05O and Cu2O nanopowders

ZnO, Zn_0.95Mn_0.05O and Cu₂O nanocrystals are synthesized. Excitonic lines in absorption spectra of these materials are detected. In photoluminescence and photoluminescence excitation spectra of Zn_0.95Mn_0.05O the dangling bond hybrid (DBH) state is found. It has splitted out from the top of the valence band due to the hybridization between d-states of the Mn impurity and the p-states of oxygen.     

Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO3 Heterojunctions

An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.     

Optical properties of acceptor-exciton complexes in ZnO/SiO2 quantum dots

The binding energy E_b of the acceptor-exciton complex (A⁻,X) as a function of the radius (or of the impurity position of the acceptor) and the normalized oscillator strength of (A⁻,X) in spherical ZnO quantum dots (QDs) embedded in a SiO₂ matrix are calculated using the effective-mass approximation under the diagonalzation matrix technique, including a three-dimensional confinement of the carrier in the QD and assuming a finite depth. Numerical results show that the binding energy of the acceptor-exciton complexes is particularly robust when the impurity position of the acceptor is in the center of the ZnO QDs. It has been clearly shown from our calculations that these physical parameters are very sensitive to the quantum dot size and to the impurity position. These results could be particularly helpful, since they are closely related to experiments performed on such nanoparticles. This may allow us to improve the stability and efficiency of the semiconductor quantum dot luminescence which is considered critical.     

Structural, compositional and magnetic characterization of bulk V2O5 doped ZnO system

This paper investigates the structural, compositional and magnetic properties of vanadium doped ZnO bulk samples prepared by solid state reaction technique. The Rietveld refinement analysis for XRD results of samples showed small change in lattice parameters for 3 and 5% vanadium doped ZnO samples indicating the substitution of Zn²⁺ ions by vanadium ions in ZnO lattice. Raman spectroscopy reveals the change in ZnO modes positions due to vanadium doping. The appearance of E₁ and E₂ modes showed that the wurtzite structure of ZnO is still maintained after doping of vanadium oxide. XPS analysis confirms the presence of the different elements and oxidation states of vanadium ions. M-H curves obtained from VSM showed weak ferromagnetism in the samples. The observation of ferromagnetic behavior indicates the formation of ZnVO phase with V²⁺ ion substitution in the ZnO lattice. XPS scans of the etched bulk samples confirmed the 2+ oxidation state of vanadium ions in our samples explaining the origin of ferromagnetism.     

On the room-temperature ferromagnetism in (ZnO)0.98(MnO2)0.02

Room-temperature ferromagnetism (RTFM) is investigated in the polycrystalline bulk (ZnO)_0.98(MnO₂)_0.02 samples prepared by a modified solid-state sintering route. Successive sintering of a sample was carried out in air at different temperatures in the range of 400-1000 °C. The study of magnetization and phase-investigation in the sample was carried out after each sintering step. The progressive suppression of impurities and the consequent reduction in RTFM is clearly observed in the samples with increase in the sintering temperature up to 800 °C. The subsequent successive sintering of the (ZnO)_0.98(MnO₂)_0.02 sample up to 1000 °C yields fully paramagnetic sample exhibiting wurtzite structure. The studies support the conjecture (Kundaliya et al., Nat. Mater. 3 (2004) 709 [18]) that RTFM in this system has an origin related to a randomly distributed impurity phase produced by local dissolution of ZnO and MnO₂.     

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

High quality epitaxial ZnO films were grown on c-Al₂O₃ substrates with Cr₂O₃ buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr₂O₃ layer was formed by oxidation of the Cr-metal layer deposited on the c-Al₂O₃ substrate using oxygen plasma. The epitaxial relationship was determined to be ZnO//Cr₂O₃//Cr//Al₂O₃ and ZnO//Cr₂O₃//[0 0 1]Cr//Al₂O_3. The Cr₂O₃ buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr₂O₃ buffer.     

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.     

Low-field transport properties of (1−x)La0.7Ca0.2 Sr0.1MnO3+x(ZnO) composites

Composite samples (1−x)La_0.7Ca_0.2Sr_0.1MnO₃(LCSMO)+x(ZnO) with different ZnO doping levels x have been investigated systematically. The structure and morphology of the composites have been studied by the X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The XRD and SEM results indicate that no reaction occurs between LCSMO and ZnO grains, and that ZnO segregates mostly at the grain boundaries of LCSMO. The magnetic properties reveal that the ferromagnetic order of LCSMO is weakened by addition of ZnO. The results also show that ZnO has a direct effect on the resistance of LCSMO/ZnO composites, especially on the low-temperature resistance. With increase of the ZnO doping level, T_P shifts to a lower temperature and the resistance increases. It is interesting to note that an enhanced magnetoresisitance (MR) effect for the composites is found over a wide temperature range from low temperature to room temperature in an applied magnetic field of 3 kOe. The maximum MR appears at x=0.1. The low field magnetoresistance (LFMR) results from spin-polarized tunneling. However, around room temperature, the enhanced MR of the composites is caused by magnetic disorder.     

Growth behaviour of ZnO thin films and nanowires on SrTiO3 substrates

We report on comparative investigations of ZnO thin films and nanowires grown on SrTiO₃ (STO) single crystal substrates. Using pulsed laser deposition technique, we could grow ZnO thin films with ()- and (0001)-orientations on (100)- and (110)-orientated STO substrates, respectively. ZnO nanowires, grown by vapour condensation method with Au catalyst layers, did not show preferential alignment on either of the STO substrates. When the ZnO(0001)/STO(110) film was used as seed layer, we obtained dense and vertically aligned nanowires. Whereas, few and inclined nanowires were grown on the ZnO()/STO(100) film. We discuss possible origins to cause all the observations.     

Effect of ZnO/CdO on the structure and electrical conductivity in Li2O·MO·Bi2O3·B2O3 glasses (M=Zn, Cd)

Studies of structural and electrical properties have been carried out on a number of glasses with wide ranging compositions in the glass systems Li₂O·MO·Bi₂O₃·B₂O₃ (where M=Zn or Cd), in order to understand the effect of transition metal (TM) ions on the structure of these glasses. The density and molar volume measurements have also been made to understand the structural changes occurring in these glasses. The dc conductivity measured in the temperature range 423-623 K obeys Arrhenius law. It increases with increase in Li₂O/MO ratio. The results of infrared spectra indicate that TM ions (Zn²⁺ or Cd²⁺) behave as network former in the present system. Boron exists in both tri- and tetra-hedral units in these glasses and no boroxol ring formation takes place in the glass structure. Values of theoretical optical basicity have also been reported.     

As-doped p-type ZnO films grown on SiO2/Si by radio frequency magnetron sputtering

p-Type ZnO:As films with a hole concentration of 10¹⁶-10¹⁷ cm⁻³ and a mobility of 1.32-6.08 cm²/V s have been deposited on SiO₂/Si substrates by magnetron sputtering. XRD, SEM, Hall measurements are used to investigate the structural and electrical properties of the films. A p-n homojunction comprising an undoped ZnO layer and a ZnO:As layer exhibits a typical rectifying behavior. Our study demonstrates a simple method to fabricate reproducible p-type ZnO film on the SiO₂/Si substrate for the development of ZnO-based optoelectronic devices on Si-based substrates.     

Dependences of the surface and the optical properties on the O2/O2 + Ar flow-rate ratios for ZnO thin films grown on ZnO buffer layers

ZnO active layers on ZnO buffer layers were grown at various O₂/O₂ + Ar flow-rate ratios by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughnesses of the ZnO active layers grown on ZnO buffer layers decreased with decreasing O₂ atmosphere, indicative of an improvement in the ZnO surfaces. The type of the ZnO active layer was n-type, and the resistivity of the layer increased with increasing O₂ atmosphere. Photoluminescence spectra from the ZnO active layers grown on the ZnO buffer layers showed dominant peaks corresponding to local levels in the ZnO energy gap resulting from oxygen vacancies or interstitial zinc vacancies, and the peak positions changed significantly with the O₂/O₂ + Ar flow rate. These results can help improve understanding of the dependences of the surface and the optical properties on the O₂/O₂ + Ar ratio for ZnO thin films grown on ZnO buffer layers.     

Nonlinear properties and stability against DC accelerated aging stress of praseodymium oxide-based ZnO varistors by Er2O3 doping

The microstructure, nonlinear properties, and stability against DC accelerated aging stress of ZnO-Pr₆O₁₁-CoO-based varistors doped with Er₂O₃ was investigated at sintering temperatures of 1300 and 1350 °C. The addition of Er₂O₃ to ZnO-Pr₆O₁₁-CoO-based varistor greatly improved the nonlinear properties and the varistor sintered at 1300 °C exhibited good nonlinearity, with nonlinear exponent of 52.8 and leakage current of 9.8 μA The increase of sintering temperature deteriorated the nonlinear properties, whereas it greatly improved the stability.     

IR and Raman investigation on the structure of (100-x)B2O3-x[0.5 BaO-0.5 ZnO] glasses

Glasses with molar composition of (100-x)B₂O₃-x[0.5 BaO-0.5 ZnO], x=40, 50, 60, 70 were prepared from the melts of ZnO, BaCO₃ and H₃BO₃ mixture. The structure and thermal behavior were characterized by IR and Raman spectroscopy, DSC and Dilatometer. The investigation shows that the transition of the structural unit [BO₄] (B^IV) to [BO₃] (B^III) happens when BaO and ZnO content x increases in the borate glass, resulting in fewer B^III-O-B^IV bonds and more B^III-O-B^III bonds. At the same time, the diborate groups, which are found to be the predominant structural group of the glass with high B₂O₃ content, gradually changes into ring-type metaborate, pyro- and orthoborate groups. With increasing ZnO and BaO content x, the glass transition temperature (T_g) and the softening point (T_f) decreases, while linear expansion coefficient (α) increases, that comes from the weakening of the glass network.