Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.     

斜程大气湍流中激光回波的闪烁指数

根据光波斜程传输理论以及随高度变化的ITU-R大气折射率结构常数模型,考虑内尺度及从发射机到目标和从目标到接收机双斜程路径影响的条件下,应用修正Hill湍流折射率起伏功率谱,对反射器目标激光回波闪烁指数进行了研究。推导了回波闪烁指数随菲涅耳率的变化关系,数值分析了不同内尺度、传输距离、激光波长以及目标高度对回波闪烁指数的影响。结果表明:内尺度和目标高度对回波闪烁指数的影响要远大于波长和传输距离的影响。     

碱处理浓度对预脱铝ZSM-5成孔过程及其MTG反应性能的影响

在80℃水浴条件下,对ZSM-5分子筛进行酸碱处理改性;重点考察了碱处理溶液浓度对酸预处理脱铝后ZSM-5分子筛微观结构及其催化甲醇制汽油(MTG)性能的影响。通过BET、XRD、FT-IR、NH₃-TPD和TEM等手段对样品进行表征。结果表明,单独酸处理没有改变分子筛孔结构,单独碱处理产生了并不明显的介孔。酸预处理后再碱处理可促进介孔的产生,产生更为显著的介孔结构;而且随着碱处理强度的增加,分子筛样品的介孔/微孔比表面积比例和孔体积均先增大后降低。酸浓度2mol·L^-1,碱浓度0.4mol·L^-1条件处理得到的分子筛,介孔比表面积比例和孔容均达到最大,酸量和酸强度最低。在400℃,0.1MPa,WHSV=2.1h^-1条件下,甲醇制汽油反应性能最佳:汽油收率由未改性时的30wt%提高到34wt%,寿命更是由16h延长到135h,芳烃含量由原来的73wt%降至20wt%。     

碱处理浓度对预脱铝ZSM-5成孔过程及其MTG反应性能的影响

在80℃水浴条件下,对ZSM-5分子筛进行酸碱处理改性;重点考察了碱处理溶液浓度对酸预处理脱铝后ZSM-5分子筛微观结构及其催化甲醇制汽油(MTG)性能的影响。通过BET、XRD、FT-IR、NH₃-TPD和TEM等手段对样品进行表征。结果表明,单独酸处理没有改变分子筛孔结构,单独碱处理产生了并不明显的介孔。酸预处理后再碱处理可促进介孔的产生,产生更为显著的介孔结构;而且随着碱处理强度的增加,分子筛样品的介孔比表面积比例和孔体积均先增大后降低。酸浓度2 mol·L^-1,碱浓度0.4 mol·L^-1条件处理得到的分子筛,介孔比表面积比例和孔容均达到最大,酸量和酸强度最低。在400℃,0.1 MPa,WHSV=2.1 h^-1条件下,甲醇制汽油反应性能最佳:汽油收率由未改性时的30wt%提高到34wt%,寿命更是由16 h延长到135 h,芳烃含量由原来的73wt%降至20wt%。     

Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO3 Heterojunctions

An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.