本体聚合法制备PbSe/PMMA量子点光纤材料

通过本体聚合法,制备出以聚甲基丙烯酸甲酯(PMMA)为基底的PbSe量子点光纤材料PbSe/PMMA.用透射电镜(TEM)观测了PMMA中PbSe量子点的形貌特征,用紫外可见近红外分光光度仪和荧光光谱仪分析了吸收谱和荧光发射(PL)谱.结果表明,PbSe/PMMA材料中生成的PbSe量子点为近似球形、边界明晰、分布均匀...     

CdSe/CdS/ZnS量子点光纤的增益研究

采用油相法合成了CdSe/CdS/ZnS量子点,相对于CdSe量子点,其吸收光谱、发射光谱均发生了红移。利用COMSOL Multiphysics软件模拟CdSe/CdS/ZnS量子点光纤和甲苯光纤的电场分布,结果表明CdSe/CdS/ZnS量子点光纤的电场强度高于甲苯光纤。采用中心波长为532 nm的稳态半导体激光器作为光源,对甲苯光纤、CdSe/ZnS量子点光纤、CdSe/CdS/ZnS量子点光纤进行电压信号测试,发现CdSe/ZnS量子点光纤和CdSe/CdS/ZnS量子点光纤的电压信号值相对于甲苯光纤电压信号值分别增强了6.28 mV和18.43 mV,表明双壳型量子点光纤的增益高于单壳型量子点。     

基于CdSe/ZnS量子点薄膜结构的高双折射光子晶体光纤的色散与损耗控制

基于有限元法,设计了一种六边形排列含CdSe/ZnS量子点薄膜结构的高双折射光子晶体光纤,分析了具有不同厚度CdSe/ZnS量子点薄膜光子晶体光纤的色散及损耗特性.结果表明,含CdSe/ZnS量子点薄膜结构的光子晶体光纤在x和y方向均存在基模.当泵浦光波长逐渐增加时,具有相同厚度CdSe/ZnS量子点薄膜光子晶体光纤的双折射值逐渐增大,x和y方向总色散先增大后减小且存在两个零色散点,损耗逐渐增大并在可见光波段趋近于零;具有不同厚度CdSe/ZnS量子点薄膜光子晶体光纤随CdSe/ZnS量子点薄膜厚度的增加,在相同泵浦光波长处,双折射值逐渐减小,x和y方向总色散逐渐减小且两个零色散点逐渐靠近,损耗逐渐增大.通过沉积不同厚度CdSe/ZnS量子点薄膜和选择合适泵浦光波长,可有效控制光子晶体光纤的色散和损耗.     

微腔中CdSe量子点荧光增强效应

文章主要研究了CdSe量子点微腔结构,微腔结构包括上下分布式布拉格反射镜(DBR),中间的有源层为溶解在聚甲基丙烯酸甲酯(PMMA)中的CdSe胶体量子点.采用传递矩阵法模拟微腔的反射光谱,对实验测试曲线进行较好的拟合.通过测试微腔结构的光致荧光(PL)光谱,其半峰宽(FWHM)由未加入微腔的CdSe量子点样品的27.9 nm,减小到微腔结构的7.5 nm,在微腔中的量子点,由于腔模式的出现,其发光谱的品质因数增加了3.6倍,达到了荧光增强的效果. 关键词： CdSe量子点 微腔效应 荧光增强     

界面电子转移对量子点荧光闪烁行为的影响

利用激光扫描共聚焦显微系统分别测量了CdSe/ZnS量子点在SiO2玻片表面、铟锡氧化物(ITO)纳米粒子表面和聚甲基丙烯酸甲酯(PMMA)薄膜表面上的荧光闪烁行为.研究发现,不同界面环境中量子点的亮态发光持续时间的概率密度都服从指数修正的幂律分布P(t)∝t-αexp(-t/μ).与处于SiO2玻片表面的情况相比,在ITO表面上的单量子点具有非常短暂的亮态发光持续时间,而在PMMA表面的单量子点亮态发光持续时间最长.这种荧光闪烁行为的不同主要归因于量子点与三种材料之间的界面电子转移特性.     

以UV胶为纤芯本底的CdSe/ZnS量子点光纤光致荧光光谱的传光特性

制备了一种以紫外（UV）固化胶为纤芯本底的CdSe/ZnS量子点掺杂光纤.通过测量不同掺杂浓度和光纤长度下的量子点光致荧光光谱,得到了荧光峰值强度与量子点掺杂光纤浓度和长度的关系,确定了UV胶纤芯本底下的量子点的吸收系数、合适的掺杂浓度和光纤长度.结果表明|UV胶在光纤中具有吸收小、收缩率低、与石英光纤包层折射率匹配、性能稳定等特点,是一种比较理想的实验室制备量子点光纤纤芯本底的材料.     

以UV胶为纤芯本底的CdSe/ZnS量子点光纤光致荧光光谱的传光特性

制备了一种以紫外(UV)固化胶为纤芯本底的CdSe/ZnS量子点掺杂光纤.通过测量不同掺杂浓度和光纤长度下的量子点光致荧光光谱,得到了荧光峰值强度与量子点掺杂光纤浓度和长度的关系,确定了UV胶纤芯本底下的量子点的吸收系数、合适的掺杂浓度和光纤长度.结果表明:UV胶在光纤中具有吸收小、收缩率低、与石英光纤包层折射率匹配、...     

退火对CdSe量子点荧光影响的色度学研究

制备出两种尺寸的CdSe量子点.结合色度学分析,比较了固化在PMMA基质中两种尺寸CdSe量子点在退火中发生的不同变化以及相应光谱颜色的改变.小尺寸CdSe量子点在退火中有团聚的趋势,退火后荧光明显红移,如果退火温度超过一定范围,会产生显著的双尺寸分布效应,对应的色度坐标有从白光区域向上移动到绿色区域的趋势.较大尺寸的CdSe量子点,其热稳定性相对更好,退火造成荧光红移,对应绿色区域中的色度坐标有向右移动的趋势,但颜色改变不明显,因此更适合于发光显示方面的应用.     

复合荧光CdSe量子点-脂质体的制备与表征

通过脂质体方法成功地将三辛基氧化膦(TOPO)包覆的CdSe发光量子点从非极性有机溶剂转移到生物相容性的水溶液中.分别通过透射电镜(TEM)、荧光Mapping图像,以及光致发光(PL)光谱进行表征.TEM照片显示制备的CdSe核量子点为球形,具有良好的单分散特性,平均粒径约为3nm.CdSe-脂质体复合体的平均尺寸大约20nm,TEM清楚地显示了CdSe量子点被诱捕在脂质体中.荧光Mapping显示了CdSe-脂质体复合体的发光强度分布.脂质体方法转移TOPO包覆的CdSe量子点,借助了磷脂的双分子链与CdSe表面的TOPO配体之间的疏水相互作用,在CdSe的第一配体层外部形成第二配体层,保留了CdSe的存在环境,光致发光光谱表明,量子点-脂质复合体基本保持了CdSe核量子点的发射效率.     

壳层相关的CdSe核/壳量子点发光的热稳定性

测量了CdSe/ZnS(3 ML)核/壳结构及CdSe/CdS(3 ML)/ZnCdS(1 ML)/ZnS(2 ML)核/多壳层结构量子点在80~460 K范围内的光致发光光谱,研究了壳层结构对CdSe量子点发光热稳定性的影响。详细地分析了CdSe量子点的发光峰位能量、线宽和积分强度与温度之间的关系,发现CdSe量子点的发光热稳定性依赖于壳层结构。CdS/ZnCdS/ZnS多壳层结构包覆CdSe量子点在低温和高温部分的热激活能均大于ZnS壳层包覆的CdSe量子点,具有更好的发光热稳定性。此外,在300-460-300 K加热-冷却循环实验中,CdS/ZnCdS/ZnS多壳层结构包覆CdSe量子点的发光强度永久性损失更少,热抵御能力更强。     

CdSe/PMMA: Plastic fiber material containing CdSe quantum dots

An optical gain plastic, CdSe/PMMA, poly-methyl methacrylate doped with CdSe quantum dot (QD), is reported in this study. With a narrow size distribution of the QD prepared by organic synthesis, the measured results show that the photoluminescence (PL) peak intensity is enhanced by ～2.5 times, FWHM broadened by ～10 nm, and the PL peak wavelength blue shifted by ～25 nm in the CdSe/PMMA compared with plain CdSe QD. Under continuous irradiation of 473-nm laser, the PL peak intensity is positively correlated with time within the first hour after the samples are fabricated, but gradually stabilizes afterward. The obtained results suggest that the CdSe/PMMA material reported here is a desirable optical gain plastic. Potential applications include high gain wideband fiber amplifiers or other photonic devices in the future due to its high flexibility, low weight and low cost.     

Preparation of Nanocomposites Based on PMMA and CdSe,CdSe/CdS Quantum Dots

Russian Physics Journal - Nanocomposites based on PMMA and CdSe, CdSe/CdS quantum dots were developed. Quantum dots (QD) of CdSe, CdSe/CdS with sizes from 2.0 nm to 4.0 nm were obtained by...     

低浓度掺杂CdSe/ZnS量子点光纤光致荧光光谱特性研究

制备了一种半导体量子点CdSe/ZnS低浓度掺杂的光纤,测量了不同掺杂浓度和不同光纤长度下光纤出射端的光致荧光光谱,分析了掺杂光纤长度和浓度对量子点光纤荧光光谱特性的影响.结果表明,与掺入光纤前相比,光纤中的量子点荧光发射峰值波长出现红移.在掺杂光纤长度为1~20 cm和掺杂浓度为(0.33~2.5)×10－2mg/mL的实验范围内,红移量随着掺杂光纤长度的增加和掺杂浓度的提高而增大.对给定的激励功率,荧光发射峰值强度对应有一个最佳的量子点光纤长度.对于给定的量子点光纤长度,荧光发射峰值强度对应有一个最佳的量子点掺杂浓度.     

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.     

较高掺杂浓度下CdSe/ZnS量子点光纤光致荧光光谱

制备了一种较高浓度掺杂的CdSe/ZnS量子点掺杂光纤.测量了不同掺杂浓度和不同光纤长度下的量子点光纤光致荧光光谱,得剑了荧光峰值增益最大时的量子点掺杂浓度和光纤长度.与低浓度掺杂光纤相比,较高掺杂浓度光纤中的荧光峰值光强明显提高.荧光峰值光强随光纤长度的变化在短距离内(L<1 cm)急剧上升,之后缓慢均匀下降.波长473 nm激励光强随光纤}乏度的变化呈指数形式衰减,消光系数为0.26～1.02 cm-1.在给定激励光强和激励波长的条件下,光纤中可达到最大荧光辐射的晕子点总数为一恒量.光纤中的荧光峰值波长存在红移,红移大小约8～15 nm,红移量与掺杂浓度以及光纤长度有关.这些实验结果可为今后量子点光纤放大器的研制提供参考.     

Steady State and Time Resolved Spectroscopic Study of CdSe and CdSe/ZnS QDs:FRET Approach

This article highlights some physical studies on the relaxation dynamics and Förster resonance energy transfer (FRET) of semiconductor quantum dots (QDs) to proximal dye molecule and the way these phenomena change with core to core-shell QD is discussed. Efforts to understand the optical and carrier relaxation dynamics of CdSe and CdSe/ZnS QDs are made by using absorption, steady-state fluorescence and time-resolved fluorescence (TCSPC) techniques. Steady-state as well as time-resolved fluorescence measurements were employed to evaluate the QD PL quenching induced by the proximal Rhodamine 101 dye molecule and to examine the influence of deep trap states on energy transfer efficiency. The FRET parameters such as spectral overlap, Förster distance, intermolecular distance for each donor-acceptor pair are determined and variation of these parameters from core to core-shell QD is discussed.     

塑料光纤相位调制灵敏度的研究

研究了压电涂层PMMA纤芯塑料光纤中的相位调制.射频信号通过对光纤外层的压电涂层作用,使纤芯中产生应变,从而对光纤中的光信号进行相位调制.数值计算结果表明,与传统的石英光纤相比,PMMA塑料光纤的相位调制的灵敏度要高数十倍以上.     

Re-charging the luminescence states in CdSe/ZnS quantum dots at the conjugation to Osteopontin antibodies

The paper presents the original study of photoluminescence (PL) and Raman scattering spectra of core–shell CdSe/ZnS quantum dots (QDs) covered by the amine-derivatized polyethylene glycol (PEG) with luminescence interface states. First commercially available CdSe/ZnS QDs with emission at 640 nm (1.94 eV) covered by PEG polymer have been studied in nonconjugated states. PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in a CdSe core and to the hot electron–hole recombination via high energy luminescence states. The study of high energy PL bands in QDs at different temperatures has shown that these PL bands are related to luminescence interface states at the CdSe/ZnS or ZnS/polymer interface. Then CdSe/ZnS QDs have been conjugated with biomolecules—the Osteopontin antibodies. It is revealed that the PL spectrum of bioconjugated QDs changed essentially with decreasing hot electron–hole recombination flow via luminescence interface states. It is shown that the QD bioconjugation process to Osteopontin antibodies is complex and includes the covalent and electrostatic interactions between them. The variation of PL spectra due to the bioconjugation is explained on the basis of electrostatic interaction between the QDs and biomolecule dipoles that stimulates re-charging QD interface states. The study of Raman scattering of bioconjugated CdSe/ZnS QDs has confirmed that the antibody molecules have the electric dipoles. It is shown that CdSe/ZnS QDs with luminescence interface states are promising for the study of bioconjugation effects with specific antibodies and can be a powerful technique in biology and medicine.