Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.     

太赫兹互补金属氧化物半导体场效应管探测器理论模型中扩散效应研究

针对基于经典动力学理论传统模型中忽略扩散效应的问题,通过对基于玻尔兹曼理论的场效应管传输线模型的理论分析,建立了包含扩散效应的太赫兹互补金属氧化物半导体(CMOS)场效应管探测器理论模型,研究扩散效应对场效应管电导及响应度的影响.同时,将此模型与忽略了扩散效应的传统模型进行了对比仿真模拟,给出了两种模型下的电流响应度随温度及频率变化的差别.依据仿真结果,并结合3σ原则明确了场效应管传输线模型中扩散部分省略的依据和条件.研究结果表明:扩散部分引起的响应度差异大小主要由场效应管的工作温度及工作频率决定.其中工作频率起主要作用,温度变化对差异大小影响较为微弱;而对于工作频率而言,当场效应管工作频率小于1 THz时,模型中的扩散部分可以忽略不计;而当工作频率大于1 THz时,扩散部分不可省略,此时场效应管模型需同时包含漂移、散射及扩散三个物理过程.本文的研究结果为太赫兹CMOS场效应管理论模型的精确建立及模拟提供了理论支持.     

$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导     

Double-gate-all-around tunnel field-effect transistor

In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.     

Large signal analysis of double quantum well transistor laser

In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers.     

Off-resonant activation of optical emission

Recent reports have identified a three-wave optically parametric mechanism for the active enhancement of fluorescence using off-resonant radiation. In this Letter it is shown by numerical simulation that the output of a laser system optically pumped just below threshold, can be strongly enhanced by this mechanism, using an ancillary beam of moderate intensity. The electrodynamics and kinetics of the nonlinear optical mechanism are analyzed, model calculations performed, and the output is illustrated graphically. The response demonstrates a novel method for achieving all-optical transistor action.     

采用发射极非均匀指间距技术改善功率异质结双极晶体管热稳定性的研究

为了提高多发射极功率异质结双极晶体管的热稳定性,本文利用耦合热阻表征发射极指间距变化对发射极指间热耦合作用的影响,得到了耦合热阻与发射极指间距之间的变化关系,提出了发射极非均匀指间距技术.通过热电反馈模型对采用发射极非均匀指间距技术的功率HBT进行热稳定性分析,得到了多发射极指上的温度分布.结果表明,多发射极HBT在采用非均匀发射极指间距技术后,峰值温度明显下降,温度变化幅度更加平缓,有效地提高了器件的热稳定性. 关键词： 异质结双极晶体管 耦合热阻 指间距     

Electromechanical single electron transistor in strong dissipative structure

In the experiment of electromechanical single electron transistor, two tunneling junctions are not the same completely because of manufacturing processes or quantum effects. We simplify these complexities as an asymmetric-junction device with two unequal initial capacitances. A model system of a single electron transistor with strong dissipation is investigated, where the metal cluster of mechanical motion is coupled to drain and source electrodes. This semiclassical system considers the difference between drain capacitor and source capacitor, simulated by using Monte Carlo methods. The voltage regions are distributed into the efficient-shuttle region and the non-shuttle region by the shuttle mechanism of the island. A symmetric-junction device only works in the efficient-shuttle region. However, both kinds of mechanisms occur in an asymmetric-junction device, where we observe restrained currents and negative differential conductance phenomena.     

22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究

利用计算机辅助设计技术数值仿真工具, 研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应, 系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响. 模拟结果表明, 掺杂地平面和量子效应对于单粒子瞬态效应影响很小, 重离子入射产生大量电荷, 屏蔽了初始电荷分布的差异性. 单粒子瞬态效应以及收集电荷和重离子入射位置强相关, 超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端. 当栅功函数从4.3 eV变化到4.65 eV时, 单粒子瞬态电流峰值从564 μA减小到509 μA, 收集电荷从4.57 fC减小到3.97 fC. 超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制, 但是收集电荷却与衬底偏置电压弱相关. 关键词： 超薄体全耗尽绝缘体上硅 单粒子瞬态效应 电荷收集 数值仿真     

不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究

针对国产锗硅异质结双极晶体管(SiGe HBT),采用半导体器件三维计算机模拟工具,建立单粒子效应三维损伤模型,研究不同偏置状态对SiGe HBT单粒子效应的影响.分析比较不同偏置下重离子入射器件后,各端口电流瞬变峰值和电荷收集量随时间的变化关系,获得SiGe HBT单粒子效应与偏置的响应关系.结果表明:不同端口对单粒子效应响应的最劣偏置不同,同一端口电荷收集量和瞬变电流峰值的最劣偏置也有所差异.载流子输运方式变化和外加电场影响是造成这种现象的主要原因.     

Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor

The process-related surface state effect is investigated the fabrication of SiC devices, and a nonllnear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is propose, which takes into account the surface related parameters. The frequency-and temperature-dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices     

A gravitating light-ball: Stationary states and developing collapse

A ball filled with a light-gas is studied in the frame of GR in the spherically symmetric case. Equations of motion suitable for the numerical solution are developed and it is shown that the variables of the gravitational field can be excluded from the equations of motion, thus reducing the gravitational interaction into an equivalent direct interaction of the matter with itself. The stationary states, oscillation modes and instability modes are computed and the processes of decay of unstable states and of collapse are studied.     

超强激光场等离子体中电子纵向运动的研究

在数值求解一维Maxwell场方程和流体运动方程的基础上,得到了超强激光场下等离子体中电子纵向运动的行波解,并分析了等离子体静电场对电子纵向运动的影响. 关键词： 等离子体 相对论 电子 超强激光场     

Harmonic pulsed excitation and motion detection of a vibrating reflective target

Elasticity imaging is an emerging medical imaging modality. Methods involving acoustic radiation force excitation and pulse-echo ultrasound motion detection have been investigated to assess the mechanical response of tissue. In this work new methods for dynamic radiation force excitation and motion detection are presented. The theory and model for harmonic motion detection of a vibrating reflective target are presented. The model incorporates processing of radio frequency data acquired using pulse-echo ultrasound to measure harmonic motion with amplitudes ranging from 100 to 10,000 nm. A numerical study was performed to assess the effects of different parameters on the accuracy and precision of displacement amplitude and phase estimation and showed how estimation errors could be minimized. Harmonic pulsed excitation is introduced as a multifrequency radiation force excitation method that utilizes ultrasound tonebursts repeated at a rate f(r). The radiation force, consisting of frequency components at multiples of f(r), is generated using 3.0 MHz ultrasound, and motion detection is performed simultaneously with 9.0 MHz pulse-echo ultrasound. A parameterized experimental analysis showed that displacement can be measured with small errors for motion with amplitudes as low as 100 nm. The parameterized numerical and experimental analyses provide insight into how to optimize acquisition parameters to minimize measurement errors.     

RF focusing of ion beams in the axisymmetric periodic structure of a linac

A new approach to the analysis of charge particle motion in periodic resonant RF accelerators is suggested. A three-dimensional equation of motion in the Hamiltonian form is derived. This equation makes it possible to carefully study the relationship between the transverse and the longitudinal dynamics of the ion beams at low initial energies. General conditions for RF focusing in ion linacs are formulated. Basic results are compared with numerical simulation data for the beam dynamics in the polyharmonic field of the accelerating cavity. A version of an RF-focusing proton accelerator in which the current transmission coefficient is close to that in an accelerator with radio frequency quadrupole is described.     

Chaotically Temporal Retrieval of Memory

A neural network with nonlinear delays to produce temporal retrieval of memory is presented. In this network, chaotic motion of the local fields provides a mechanism for the system to escape from one memory to another. It is proved by numerical investigations that the chaotic temporal process can explore the topological structure of the state space and the system has better efficiency of searching global minimum of the energy function than the Hopfield model. The characters of the system show that it may have great potential use in solving combinatorial optimization problems with its complex dynamics.     

Bubble motion in inclined pipes

Highly nonlinear free-surface flows in vertical, inclined, and horizontal pipes are analyzed. The problem of bubble motion in a vertical pipe is closely related to the Rayleigh-Taylor instability problem. Inclined pipe flows are intensively studied as related to gas and oil transportation. A new theory of motion of large bubbles in pipes is developed. As distinct from previous approaches, which relied on semiempirical methods or numerical fitting, analytical methods of potential theory and complex analysis are used. A careful comparison of 2D and 3D solutions is presented. It is shown that a higher dimensionality may not correspond to a higher bubble velocity. For the first time, free-surface flows in inclined pipes are analyzed by means of direct numerical simulation, which makes it possible to develop a new approach to the Rayleigh-Taylor instability problem (bubbles with wedge-and cone-shaped noses).     

Theoretical analysis for surface tilt and translation detection based on speckle photography in the Fresnel domain

The theoretical and numerical analysis in this work show that both surface tilting and translational motion can be simultaneously calculated using the speckle photographic technique by recording consecutive speckle pattern images in two different Fresnel diffraction distances. A simulation example based on the proposed scheme is given to verify the method’s validity and high accuracy of the calculated motion detection. Compared with other previous works the results show that this method is efficient and easy to implement.