共查询到19条相似文献,搜索用时 46 毫秒
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在0—10T磁场范围内,系统地测量了YBa2Cu3O7-δ外延薄膜处于磁场平行和垂直膜面两种情况下的R-T曲线和I-V曲线, 并对该样品的不可逆线和磁通玻璃线作了直接的比较.结果表明, 由不同约化电阻率判据给出的不可逆线和磁通玻璃线遵守相同的H∝(T(0)-T(H))n 关系.对于不可逆线, n=3/2,对于磁通玻璃线,n=4/3.不可逆线的位置不仅与判据有关而且与测量电流密度也有关,磁通玻璃线位于不可逆线的下方.探讨
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为了得到在高背景噪音下对弱信号光的提取,实验研究了基于87Rb D1线5S1/2F=2→5P1/2 F'=1跃迁的795 nm法拉第反常色散光学滤波器.充铷的样品池所含87Rb的比例高于自然铷,样品池处在均匀的磁场中并且夹在两个相互正交的偏振片之间.入射的探测光通过样品池,与原子相互作用,由于法拉第旋转效应实现滤波功能.改变实验条件,透射结果随之明显变化.当温度从340 K升高到360 K,透射谱的变化情况被细致记录,并且分析了导致透射情况变化的原因.在适当的工作温度以及磁场条件下,得到线宽为约220 MHz的超窄带透射谱线,谱线透过率约为48%.87Rb D1线的实验结果优于85Rb的吸收线. 相似文献
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设计了一种脉冲形成线用新型CaO-TiO2-Al2O3基介质陶瓷体系,采用传统固相法通过优化组分和制备工艺,调控材料的微结构,获得了介电性能优异的介质陶瓷。其介电常数在15~35之间可调,介电损耗小于0.002,频率稳定性好。在厚度为1 mm时,介电强度高达50 kV/mm。研究了厚度对CaO-TiO2-Al2O3基介质陶瓷介电强度的影响规律,当厚度从1 mm减小到0.1 mm时,介电强度呈非线性增大,从50 kV/mm(1 mm厚样品)提高到92 kV/mm(0.1 mm厚样品),可见,CaO-TiO2-Al2O3基介质陶瓷的电击穿与其机械损坏具有相似性。结合CaO-TiO2-Al2O3基介质陶瓷的化学组分和微观结构,CaO-TiO2-Al2O3基介质陶瓷优越的电击穿特性可以用弱点击穿理论解释。 相似文献
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本文利用最近建立的能精确求解双原子分子P线系发射光谱的物理新公式, 研究了NbN分子从电子态d1Σ+向b1Σ+电子态跃迁中(1,1)跃迁带的P支发射光谱. 获得的计算结果不仅很好地重现了已知低转动态的实验谱线数据, 同时也预言了该跃迁带包含转动量子数J=80在内的高振转激发态的精确P线系发射光谱. 该方法在理论上为实验技术难以精确测量的双原子分子体系提供了一种获得精确的高激发态谱线数据的物理新方法. 从而可以为那些需要NbN分子高激发态跃迁谱线的研究工作提供必要的数据. 相似文献
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Ph(Mg_(1/3)Nb_(2/3)_(0.380)Ti_(0.360)Zr_(0.260)O_3中的Pb为6%mol的Ba所置换的晶片,比置换量为5%mol的Ba,有更优良的压电性和均匀性,其K_t=0.503,K_p=0.658,N_t=2050KC·mm,tgδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3188,用3%molBa和3%molSr复合置换Pb(Mg_(1/3)Nb_(2/3))_0.380Ti_(0.360)Zr_(0.260)O_3的Pb时仍保持纯Ba置换的良好均匀性和压电性,其K_t=0.504,K_p=0.660,N_t=2060KC·mm,thδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3356.它们良好的压电性和均匀性合乎制作超声实时显像线阵晶片的要求.在线阵晶片中重现这些优良性能的工艺条件是现实的,因而得到实际应用. 相似文献
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H. AROUI M. BROQUIER A. PICARD-BERSELLINI J.P. BOUANICH M. CHEVALIER S. GHERISSI 《Journal of Quantitative Spectroscopy & Radiative Transfer》1998,60(6):1011-1023
The intensities and foreign gas broadening coefficients of 57 selected lines of the ν4 band of NH3 have been measured in the region of 1550 cm-1 using a high resolution Brucker Fourier transform spectrometer. The line intensities were obtained by using the methods of absorbance at the line center and by fitting Voigt profiles to the measured shapes of the lines. The latter method also provides the collisional widths of the lines. In addition, collision cross relaxation coefficients of O2 and air foreign gases were measured for 9 doublets of NH3 in the ν4 band. The J and K quantum numbers dependencies of pressure-broadening coefficients and line intensities are discussed. The observed air broadening and cross relaxation coefficients were found to be in reasonable quantitative agreement with the concentration-weighted average of the N2 and O2 broadening coefficients. The comparison of our present and previous results obtained for the NH3–H2, NH3–air, NH3–N2 and NH3–CO2 collisions shows an increase of the pressure broadening and cross relaxation coefficients with quadrupole moment of the foreign gas. The analysis of the line intensities was based on the third-order theory of line strengths and yields effective transition moments, vibrational band strengths and correction parameters of the symmetric and antisymmetric partial bands of the fundamental ν4 band. 相似文献
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本文讨论二价铁对铁氧体的铁磁共振线宽的影响。由于在尖晶石型铁氧体中,二价铁的基态是轨道单态,晶场的直接效应很小。二价铁对铁磁共振性质有显著影响的原因是各向异性交换作用引起二价铁磁矩不与总磁矩平行,因而使得文献[1]中所述的纵分支对共振性质起作用。我们推广文献[1]中的方法,使之适用于强交换耦合体系,并用之计算了二价铁对共振线宽的影响。计算表明,体系间的交换耦合的强弱对线宽的影响很小。对含二价铁反型尖晶石型铁氧体算得的结果解释了[100]方向线宽随温度的变化不出现极大,而在其他方向则出现极大的现象。导出的线宽的各向异性也与实验相符。 相似文献
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K.V. Ivanovskikh A. Meijerink A. Speghini C. Ronda M. Bettinelli 《Journal of luminescence》2010,130(5):893-16384
The silicates Ca3Sc2Si3O12, Ca3Y2Si3O12 and Ca3Lu2Si3O12, both undoped and doped with Pr3+ ions, have been synthesized by solid-state reaction at high temperature. The luminescence spectroscopy and the excited state dynamics of the materials have been studied upon VUV and X-ray excitation using synchrotron radiation. All doped samples have shown efficient 5d-4f emission upon direct VUV excitation of 5d levels, but only Ca3Sc2Si3O12:Pr3+ shows luminescence upon interband VUV or X-ray excitation. The VUV excited emission spectra of Ca3Y2Si3O12:Pr3+ and Ca3Lu2Si3O12:Pr3+ show features attributed to emission from two distinct sites accommodating the Pr3+ dopant. The decay kinetics of the Pr3+ 5d-4f emission in Ca3Sc2Si3O12:Pr3+ upon VUV excitation across the band gap are characterized by decay times in the range 25-28 ns with no significant rise after the excitation pulse. They appear to be faster upon X-ray irradiation than for VUV excitation. Weak afterglow components are attributed to defect luminescence. 相似文献
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利用环形腔掺钛宝石激光自动扫描系统、公里级怀特池系统和信号探测系统,我们对氧分子A带重叠谱线区(13162.85~13165.33cm ̄(-1))进行了高分辨吸收光谱测量,给出了8条谱线的线宽、线强的实验值。同时通过对测量数据的分析,首次证明在谱线重叠区,谱线之间的线相干效应不仅影响谱线之间的吸收率,而且同样影响线参数测量值的精度。在0.1MPa与光程为1km时,它对线强、线宽的测量值和透过率的最大影响分别可达8.8%、16.6%和8.3%。 相似文献
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Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2 nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO2/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 °C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications. 相似文献