锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Ionisationsgleichung für Plasmen des mittleren Temperatur- und Dichtebereiches

By evaluation of classical rate coefficients for ionization and recombination in a plasma a modified ionization formula is given for the intermediate range of electron temperature and density which is of interest for laboratory experiments. In accordance with recent spectroscopic measurements another ionization formula is discussed using the cross-sections ofBates andKingston. This formula meets the physical phenomena better than previous calculations. In hydrogen it yields the tenfold value for the neutral plasma component as would be expected from the Saha-equation.     

Exploration of strong-field double ionization of C_3H_6 with the structures of propene and cyclopropane in intense laser fields

By using classical ensemble method, we investigate the double ionization of C_3H_6 molecule with different structures(propene and cyclopropane) in intense laser fields. The numerical results show that the non-sequential double ionization occurs in propene molecule rather than cyclopropane molecule in 1200 nm laser field. To further explain this interesting phenomenon, the momentum distribution of double ionized electrons is presented and the result presents the "finger-like" structure at about 30 TW/cm~2 of propene molecule, and this structure is more obvious than that in cyclopropane molecule.The above phenomena are also demonstrated by analysing the energy distributions of double-ionized electrons versus time. Moreover, we also investigated the angular distribution at the end of pulse, which is different between propene and cyclopropane.     

相对论全腔轴向提取磁控管阳极释气数值模拟研究

相对论电子轰击阳极产生二次电子和释气以及释气电离产生的击穿现象是限制全腔轴向提取透明阴极磁控管（TCMAC）工作性能的一个重要因素。本研究对TCMAC中轰击产生的阳极二次电子以及释气电离现象进行了物理建模以及三维数值模拟研究,考察了其对TCMAC运行性能的影响。初步计算结果表明,二次电子发射与阳极释气对TCMAC工作都有一定影响,释气后电离产生的正离子数大于系统中电子数时,会导致TCMAC击穿。     

多脉冲磁绝缘线振荡器阴极释气电离仿真研究

在磁绝缘线振荡器（MILO）阴极释气电离物理建模技术以及三维自洽运算基础上,研究了残存气体脉冲缩短,并分析了释气电离对多脉冲MILO运行的影响。把多脉冲释气分为脉冲内阴极释气脉间残余气体累积两个部分,研究了不同释气率以及残余气体对整个器件的运行产生影响。计算结果表明,多脉冲运行MILO最主要影响因素是释气后电离产生的正离子,当正离子密度超过发射电子密度时,束波互作用被破坏。     

Phase-dependent effects of a few-cycle laser pulse

The Keldysh theory of above-threshold ionization (ATI) is applied to few-cycle laser pulses in order to explore the potential of a recently published new method to measure "carrier-envelope phase difference" phenomena. In this experiment, the carrier-envelope phase difference dependent left-right asymmetry of few-cycle ATI was measured and investigated with a correlation technique. Here, we explore spectral features of the asymmetry, present a theoretical analysis of the experiment, and establish a method to determine the duration of few-cycle pulses whose carrier-envelope phase differences are not controlled.     

磁绝缘线振荡器阴极释气电离粒子模拟

阴极释气电离产生的击穿现象是限制磁绝缘线振荡器(MILO)工作性能的一个可能因素,也是限制其重频运行的主要障碍。利用三维全电磁粒子模拟程序对高功率微波器件MILO中阴极释气电离现象的物理建模技术以及实现三维自洽运算所需的粒子模拟技术进行了分析研究。对不同相对释气率的情况进行了模拟计算,模拟计算结果表明,当释气率超过一定阈值时,电离导致的等离子体会使微波输出功率迅速下降。     

激光触发多级多通道开关触发延迟及其抖动特性

 研究了激光触发多级多通道开关的触发延迟时间及其抖动与激光脉冲能量等实验参量的依赖关系，建立了零维数值模拟模型对实验现象进行了理论解释。实验结果表明：触发延迟时间及其抖动随激光脉冲能量、工作电压、气压上升呈下降趋势；随SF₆-N₂混合气中SF₆体积百分含量上升呈上升趋势。欠压比大于等于90%时200kV原理型激光触发多级多通道开关触发延迟时间抖动小于1ns。     

Predicting intense-field photoionization of atoms and molecules from their linear photoabsorption spectra in the ionization continuum

We report a new approach to intense-field photoionization that is based on the ad hoc assumption that m photons of energy arriving within a typical electronic response time are effectively equivalent to a single photon of energy . The heuristic model contains no adjustable parameters and unifies apparent multiphoton and field aspects. Moreover, nonsequential, suppressed and above-threshold ionization phenomena become readily understandable. Predicted ionization intensities are in satisfactory agreement with available experimental data ranging from C₆H₆ to Ne^{3 +} , from femtosecond to nanosecond laser pulses, and from ultraviolet to infrared laser radiation.Received: 20 January 2004, Published online: 17 August 2004PACS: 32.80.Rm Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states) - 32.80.Wr Other multiphoton processes - 42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift     

负微分迁移率和碰撞电离对GaAs光导开关非线性特性的影响

对GaAs光导开关非线性工作时,负微分迁移率和碰撞电离的作用进行了数值分析,给出了考虑和未考虑碰撞电离作用时的外电路电流输出波形,以及载流子和电场的空间分布和随时间演变的情况.计算表明GaAs材料的负微分迁移率引起的微分负阻,会导致阴极附近电场的动态增强,使得阴极附近的电场达到本征碰撞电离发生的阈值电场,从而引发本征碰撞电离的发生.分析结果表明,碰撞电离可以极大地延长电流输出的时间,但仅考虑负微分迁移率特性的本征碰撞电离过程不足以完全解释观察到的所有非线性现象,必须进一步考虑其它高电场效应.     

空腔电离的电子迁移理论

本文将电子迁移方程应用于研究空腔电离现象,证明了空腔的存在对腔内电子能谱的影响可归结为在空腔内分布一均匀电子源。导出了这一等效源谱的表示式。计算了等效电子源在平行板电离室中沉积的能量。与实验相比,明显地证实新理论比Spencer-Attix理论更好地描述了空腔电离现象。 关键词：     

释气对介质沿面闪络击穿影响的粒子模拟

为研究释气下的高功率微波介质沿面闪络击穿物理机制,首先建立了理论模型,包括:动力学方程、粒子模拟算法、次级电子发射、蒙特卡罗碰撞模型以及碰撞退吸附气体分子模型;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别研究了弱退吸附、强退吸附以及释气分子运动速率对沿面闪络击穿的影响.研究结果表明:介质沿面闪络击穿本质是沉积功率的持续增加.弱退吸附下,次级电子倍增占优,随着退吸附系数的增加,碰撞电离效应对次级电子倍增有促进作用,主要表现为介质窗表面静电场、表面碰撞电子平均能量以及表面碰撞电子数目的增加,此处的表面碰撞电子主要是次级电子倍增形成的;释气分子运动速率高导致介质面附近气压下降,不利于次级电子与气体分子间碰撞电离过程形成.强退吸附下,气体碰撞电离效应占优,随着退吸附系数的增加,离子数增加速度表现为电离频率增加的指数增长形式,碰撞电离效应对次级电子倍增有抑制作用,主要表现为介质窗表面静电场为负、表面碰撞电子平均能量的降低,但是表面碰撞电子数目却得以增加,此处的表面碰撞电子主要是贴近介质面的气体碰撞电离形成的;释气分子运动速率高导致气体厚度增加,扩大了气体碰撞电离作用区域,有利于气体碰撞电离.     

Methodologies for determination of soil ionization gradient

In this paper the results of the research being carried out on the impulse characteristics of soils and more specifically the ionization voltage gradient are presented. The determination of the soil ionization voltage and the respective gradient using a universally accepted method is yet to be established. Aiming at meeting this need, the present paper critically presents these methods and records the ionization gradient values for soil types, which have derived from different experimental approaches. The comprehensive study of these methods is intended to serve as a guide for researchers studying the nonlinear phenomena developed in the soil.     

分子对飞秒激光场响应的含时密度泛函理论研究

采用含时密度泛函理论方法研究线性分子碳化锂(Li2C2)对飞秒激光场响应的电子-离子动力学行为.在典型的近共振和非共振的激光频率作用下,分别对比分析了分子的共振和非共振电离过程.研究发现:分子在共振频率激光场的作用下发生更强的电离过程,并倾向于发生库伦爆炸,键长的振荡断裂与电离相互促进影响,而分子在较弱的激光场作用下发生单光子电离过程;随着双脉冲时间间隔的增加,离化电子数在一定范围内呈振荡上升趋势,随后趋于常数.     

Zum Charakter der teilkorrelierten Fluktuationserscheinungen in Argon-Niederdruck-Schwachstrom-Säulen im transversalen Magnetfeld

The elementary theory of ionization waves, given by Pekárek, is modified to include the influence of a magnetic field. The resulting dispersion ralation delivers an interpretation of the wave phenomena in argon low-pressure low-current columns under the influence of a local transversal field. The suppresion of ionization waves by weak magnetic fields as well as the excitation of wave-packet-like fluctuations in the case of strong magnetic fields can be shown.     

分子对飞秒激光场响应的含时密度泛函理论研究

采用含时密度泛函理论方法研究线性分子碳化锂（Li2C2）对飞秒激光场响应的电子-离子动力学行为。在典型的近共振和非共振的激光频率作用下,分别对比分析了分子的共振和非共振电离过程。研究发现：分子在共振频率激光场的作用下发生更强的电离过程,并倾向于发生库伦爆炸,键长的振荡断裂与电离相互促进影响,而分子在较弱的激光场作用下发生单光子电离过程;随着双脉冲时间间隔的增加,离化电子数在一定范围内呈振荡上升趋势,随后趋于常数。     

Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor

Scattering of a standing surface plasmon by rapid ionization in a semiconductor is investigated. We show that, for a standing plasmon, in contrast with a traveling plasmon, the scattering depends on the plasmon phase at the moment of ionization. By changing the moment of ionization, we can control the energy that is transferred into newly excited modes, which include a frequency-upshifted standing surface plasmon, transient outgoing radiation, and free-streaming currents with a static magnetic field in the semiconductor. The phenomena that are described open new possibilities for probing the dynamics of surface excitations in semiconductors on an ultrashort time scale.     

Memory in nonlinear ionization of transparent solids

We demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO2 the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant (approximately 20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics.     

Effects of ionization gradients on inertial-confinement-fusion capsule hydrodynamic stability

A linear perturbation analysis based on velocity potentials is adapted to include the regional, average-ion charge states (Z) in an imploding, inertial-confinement-fusion capsule and shown to lead to superclassical Rayleigh-Taylor growth following deceleration onset. The added instability is ascribed to an inverted ion-entropy gradient driven by the stepwise ionization mismatch DeltaZ across the fuel-pusher interface and is predicted to principally occur in low Atwood-number (<0.5) implosions associated with low-Z pushers. Similar instability enhancement may pertain to supernovae phenomena and ionization fronts in H II protostellar regions.