Superconductivity in CuIr2-xAlxTe4 telluride chalcogenides

The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr$_{2-x}$Al$_{x}$Te$_{4}$ ($0 \leqslant x \leqslant 0.2$). Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al doping. Meanwhile, the superconducting transition temperature ($T_{\rm c}$) kept changing with the change of doping amount and rose towards the maximum value of 2.75 K when $x=0.075$. The value of normalized specific heat jump ($\Delta C/\gamma T_{\rm c}$) for the highest $T_{\rm c}$ sample CuIr$_{1.925}$Al$_{0.075}$Te$_{4}$ was 1.53, which was larger than the BCS value of 1.43 and showed the bulk superconducting nature. In order to clearly show the relationship between SC and CDW states, we propose a phase diagram of $T_{\rm c}$ vs. doping content.     

Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film

As a special order of electronic correlation induced by spatial modulation, the charge density wave (CDW) phenomena in condensed matters attract enormous research interests. Here, using scanning—tunneling microscopy in various temperatures, we discover a hidden incommensurate stripe-like CDW order besides the ($sqrt{7}$ × $sqrt{3}$) CDW phase at low-temperature of 4 K in the epitaxial monolayer 1T-VSe₂} film. Combining the variable-temperature angle-resolved photoemission spectroscopic (ARPES) measurements, we discover a two-step transition of an anisotropic CDW gap structure that consists of two parts Δ₁ and Δ₂. The gap part Δ₁ that closes around ～ 150 K is accompanied with the vanish of the ($sqrt{7}$ × $sqrt{3}$) CDW phase. While another momentum-dependent gap part Δ₂ can survive up to ～ 340 K, and is suggested to the result of the incommensurate CDW phase. This two-step transition with anisotropic gap opening and the resulted evolution in ARPES spectra are corroborated by our theoretical calculation based on a phenomenological form for the self-energy containing a two-gap structure Δ₁ + Δ₂, which suggests different forming mechanisms between the ($sqrt{7}$ × $sqrt{3}$) and the incommensurate CDW phases. Our findings provide significant information and deep understandings on the CDW phases in monolayer 1T-VSe₂} film as a two-dimensional (2D) material.     

Growth of Mn5Ge3 ultrathin film on Ge（111）

The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a （√3 × √3） R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T^2-dependent behaviour is observed to remain up to 220 K.     

$\mathsf{\sqrt{3}}$ linear structures in the Te/Ni(111) system

Surface structures in the Te/Ni(111) system are revealed by using reflection high-energy electron diffraction combined with X-ray and ultraviolet photoelectron spectroscopies. At a 0.33 mono-layer (ML)-Te/Ni(111) surface, a reversible structural phase transition is observed with a transition temperature T_c of 380 C. The diffraction pattern from the low temperature phase is accompanied by streaks. The high and low temperature phases are characterized by and rectangle, respectively. The mechanism of the phase transition is explained by the order-disorder transition with a rumpled chain model. Both 0.51 ML- and 0.44 ML-Te/Ni(111) surfaces exhibit the complex diffraction patterns accompanied by diffuse streaks. These surface structures are characterized by the rectangle and , respectively. All diffuse streaks obtained at the above surfaces are consistently interpreted in the view of the ill-ordered arrangements of the well-ordered linear chains. It is shown that the linear structure is the key in the Te/Ni(111) system.Received: 1 December 2003, Published online: 20 April 2004PACS: 61.14.Hg Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) - 68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties - 64.60.Cn Order-disorder transformations; statistical mechanics of model systems     

Creating large NOON states with imperfect phase control

Optical NOON states ${{\left( {\left| {\left. {N,0} \right\rangle + } \right|\left. {0,N} \right\rangle } \right)} \mathord{\left/ {\vphantom {{\left( {\left| {\left. {N,0} \right\rangle + } \right|\left. {0,N} \right\rangle } \right)} {\sqrt 2 }}} \right. \kern-\nulldelimiterspace} {\sqrt 2 }}${{\left( {\left| {\left. {N,0} \right\rangle + } \right|\left. {0,N} \right\rangle } \right)} \mathord{\left/ {\vphantom {{\left( {\left| {\left. {N,0} \right\rangle + } \right|\left. {0,N} \right\rangle } \right)} {\sqrt 2 }}} \right. \kern-\nulldelimiterspace} {\sqrt 2 }} are an important resource for Heisenberg-limited metrology and quantum lithography. The only known methods for creating NOON states with arbitrary N via linear optics and projective measurements seem to have a limited range of application due to imperfect phase control. Here, we show that bootstrapping techniques can be used to create high-fidelity NOON states of arbitrary size.     

Transition parameters of Li-like ions(Z = 7–11) in dense plasmas

The energy levels, transition energies, transition probabilities, weighted oscillator strengths, and line strengths of Lilike ions(Z = 7–11) in dense plasmas are investigated in this work. The relativistic effects and electron correlation effects are described by the MCDHF method. The ion sphere model is applied to include the dense plasma screening effect. The ground configuration 1 s~22 s and the excited 1 s~22 p, 1 s~23 l(l = 0–2) are considered. The configuration sets are enlarged until n = 7 where the calculated energy levels have converged. The critical free electron densities of 1 s~23 d states are estimated.Except for 1 s~23 s–1 s~23 p transitions, the transition energies for Δn = 0 increase, and for Δn ≠ 0 decrease with increasing free electron densities. For 1 s~23 s–1 s~23 p transitions, the spectra show blue-shift at lower free electron densities and red-shift at higher free electron densities, and the energy level crossing phenomens are observed at higher free electron densities.     

Realization of semiconducting Cu2Se by direct selenization of Cu(111)

Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu₂Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu₂Se. The observed moiré pattern indicates a lattice mismatch between Cu₂Se and the underlying Cu(111)-$\sqrt{3}$×$\sqrt{3}$ surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu₂Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu₂Se is a semiconductor with an indirect band gap of ～ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.     

Analysis of the Possible $D\bar{D}_{s0}^*(2317)$ and $D^*\bar{D}_{s1}^*(2460)$ Molecules with QCD Sum Rules *

In this article, we assume that there exist the pseudoscalar $D\bar{D}_{s0}^*(2317)$ and $D^*\bar{D}_{s1}^*(2460)$ molecular states $Z_{1,2}$ and construct the color singlet-singlet molecule-type interpolating currents to study their masses with the QCD sum rules. In calculations, we consider the contributions of the vacuum condensates up to dimension-10 and use the formula $\mu=\sqrt{M_{X/Y/Z}^{2}-(2{\mathbb{M}}_{c})^{2}}$ to determine the energy scales of the QCD spectral densities. The numerical results, $M_{Z_1}=4.61_{-0.08}^{+0.11}\,\text{GeV}$ and $M_{Z_2}=4.60_{-0.06}^{+0.07}\,\text{GeV}$, which lie above the $D\bar{D}_{s0}^*(2317)$ and $D^*\bar{D}_{s1}^*(2460)$ thresholds respectively, indicate that the $D\bar{D}_{s0}^*(2317)$ and $D^*\bar{D}_{s1}^*(2460)$ are difficult to form bound state molecular states, the $Z_{1,2}$ are probably resonance states.     

Analysis of the tetraquark and hexaquark molecular states with the QCD sum rules

In this article, we construct the color-singlet-color-singlet type currents and the color-singlet-colorsinglet-color-singlet type currents to study the scalar D*■*, D*D* tetraquark molecular states and the vector D*D*■*, D*D*D* hexaquark molecular states with the QCD sum rules in details. In calculations, we choose the pertinent energy scales of the QCD spectral densities with the energy scale formula ■for the tetraquark and hexaquark molecular states respectively in a consistent way. We obtain stable QCD sum rules for the scalar D*■*, D*D*tetraquark molecular states and the vector D*D*■* hexaquark molecular state, but cannot obtain stable QCD sum rules for the vector D*D*D* hexaquark molecular state. The connected(nonfactorizable)Feynman diagrams at the tree level(or the lowest order) and their induced diagrams via substituting the quark lines make positive contributions for the scalar D*D* tetraquark molecular state, but make negative or destructive contributions for the vector D*D*D* hexaquark molecular state. It is of no use or meaningless to distinguish the factorizable and nonfactorizable properties of the Feynman diagrams in the color space in the operator product expansion so as to interpret them in terms of the hadronic observables, we can only obtain information about the short-distance and long-distance contributions.     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.     

Spin polarization effect for Os2 molecule

Density functional Theory （DFT） （B3p86） of Gaussian03 has been used to optimize the structure of Os2 molecule. The result shows that the ground state for Os2 molecule is 9-multiple state and its electronic configuration is ^9∑^＋g, which shows spin polarization effect of Os2 molecule of transition metal elements for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions with higher energy states. So, the fact that the ground state for Os2 molecule is a 9-multiple state is indicative of spin polarization effect of Os2 molecule of transition metal elements. That is, there exist 8 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Os2 molecule is minimized. It can be concluded that the effect of parallel spin of Os2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell-Sorbie potential functions with the parameters for the ground state ^9∑^＋g and other states of Os2 molecule are derived. Dissociation energy De for the ground state of Os2 molecule is 3.3971eV, equilibrium bond length Re is 0.2403nm, vibration frequency ωe is 235.32cm^-1. Its force constants f2, f3, and f4 are 3.1032×10^2aJ·nm^-2, -14.3425×10^3aJ·nm^-3 and 50.5792×10^4aJ·nm^-4 respectively. The other spectroscopic data for the ground state of Os2 molecule ωexe, Be and ae are 0.4277cm^- 1, 0.0307cm^- 1 and 0.6491 × 10^-4cm^-1 respectively.     

Spin polarization effect for Cr2 molecule

Density functional theory （DFT） （B3P86） of Gaussian 03 has been used to optimize the structure of the Cr2 molecule, a transition metal element molecule. The result shows that the ground state for the Cr2 molecule is a 13- multiple state, indicating that there exists a spin polarization effect in the Cr2 molecule. Meanwhile, we have not found any spin pollution because the wave function of the ground state does not mingle with wave functions of higher-energy states. So the ground state for Cr2 molecule being a 13-multiple state is indicative of spin polarization effect of the Cr2 molecule among transition metal elements, that is, there are 12 parallel spin electrons in the Cr2 molecule. The number of non-conjugated electrons is greatest. These electrons occupy different spatial orbitals so that the energy of the Cr2 molecule is minimized. It can be concluded that the effect of parallel spin in the Cr2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell Sorbie potential functions with the parameters for the ground state and other states of the Cr2 molecule are derived. The dissociation energy De for the ground state of the Cr2 molecule is 0.1034eV, equilibrium bond length Re is 0.3396 nm, and vibration frequency we is 73.81cm^-1. Its force constants f2, f3 and f4 are 0.0835, -0.2831 and 0.3535 aJ. nm^-4 respectively. The other spectroscopic data for the ground state of the Cr2 molecule ωeχe, Be and αe are 1.2105, 0.0562 and 7.2938 x 10^-4cm^-1 respectively.     

A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes

Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details.     

A new transition metal diphosphide α-MoP2 synthesized by a high-temperature and high-pressure technique

Monoclinic $\alpha $-MoP$_{2}$, with the OsGe$_{2}$-type structure (space group $C2/m$, $Z = 4$) and lattice parameters $a = 8.7248(11) $ Å, $b = 3.2322(4) $ Å, $c = 7.4724(9) $ Å, and $\beta =119.263^\circ $, was synthesized under a pressure of 4 GPa at a temperature between 1100 ${^\circ}$C and 1200 ${^\circ}$C. The structure of $\alpha $-MoP$_{2}$ and its relationship to other transition metal diphosphides are discussed. Surprisingly, the ambient pressure phase orthorhombic $\beta $-MoP$_{2}$ (space group Cmc2$_{1}$) is denser in structure than $\alpha $-MoP$_{2}$. Room-temperature high-pressure x-ray diffraction studies exclude the possibility of phase transition from $\beta $-MoP$_{2}$ to $\alpha $-MoP$_{2}$, suggesting that $\alpha $-MoP$_{2}$ is a stable phase at ambient conditions; this is also supported by the total energy and phonon calculations.     

Spin polarization effect for molecule Ta2

Density functional theory （DFT） （B3p86） has been used to optimize the structure of the molecule Ta2. The result shows that the ground state of molecule Ta2 is a 7-multiple state and its electronic configuration is ^7∑u^＋, which shows the spin polarization effect for molecule Ta2 of transition metal elements for the first time. Meanwhile, spin pollution has not been found because the wavefunction of the ground state does not mix with those of higher states. So, the fact that the ground state of molecule Ta2 is a 7-multiple state indicates a spin polarization effect of molecule Ta2 of the transition metal elements, i.e. there exist 6 parallel spin electrons and the non-conjugated electrons are greatest in number. These electrons occupy different space orbitals so that the energy of molecule Ta2 is minimized. It can be concluded that the effect of parallel spin of the molecule Ta2 is larger than the effect of the conjugated molecule, which is obviously related to the effect of d-electron delocalization. In addition, the Murrell-Sorbie potential functions with parameters for the ground state ^7∑u^＋ and other states of the molecule Ta2 are derived. The dissociation energy De, equilibrium bond length Re and vibration frequency we for the ground state of molecule Ta2 are 4.5513eV, 0.2433nm and 173.06cm^-1, respectively. Its force constants f2, f3 and f4 are 1.5965×10^2aJ.nm^-2, -6.4722×10^3aJ·nm^-3 and 29.4851×10^4aJ·nm^-4, respectively. Other spectroscopic data we xe, Be and αe for the ground state of Ta2 are 0.2078cm^-1, 0.0315 cm^-1 and 0.7858×10^-4 cm^-1, respectively.     

Synthesis and photoluminescence properties of Nd2O3 nanoparticles modified by sodium bis 2-ethylhexyl sulfosuccinate

This paper reports that Nd₂O₃ nanoparticles modified by AOT(sodium bis(2-ethylhexyl) sulfosuccinate) were prepared using microemulsion method in the system of water and propanol/AOT/toluene. Transmission electron microscopy shows that the Nd₂O₃ nanoparticles take the shape of sphere with 18\,nm and 31nm with different preparation. The organic sol of Nd₂O₃ nanoparticles is very stable at room temperature. X-ray diffraction results show that the product has hexagonal phase structure. Two ultraviolet emission band at 344\,nm and 361\,nm corresponding to the transition of ⁴D_3/2→4I_9/2 and 2P_3/2→⁴I₁₁₂ or ⁴D_3/2 →⁴I_13/2 were observed.     

Magnetic field induced phase branches of the superconducting transition in two-dimensional square π-loop arrays

Based on the results of explicit forms of free energy density for each possible arrangement of magnetization fluxes in large-scale two-dimensional （2D） square π-loop arrays given by Li et al [2007 Chin. Phys. 16 1450], the field-cooled superconducting phase transition is further investigated by analysing the free energy of the arrays with a simplified symmetrical model. Our analytical result is exactly the same as that obtained in Li＇s paper by means of numerical calculations. It is shown that the phase transition splits into two branches with either ferromagnetic or anti-ferromagnetic flux ordering, which depends periodically on the strength of external magnetic flux φe through each loop and monotonically on the screen parameter β of the loops in the arrays. In principle, the diagram of the phase branches is similar to that of its one-dimensional counterpart. The influence of thermal fluctuation on the flux ordering during the transition from normal to superconducting states of the π-loop arrays is also discussed.     

Magnetic field induced phase branches of the superconducting transition in two-dimensional square π-loop arrays

Based on the results of explicit forms of free energy density for each possible arrangement of magnetization fluxes in large-scale two-dimensional (2D) square $\pi $-loop arrays given by Li \textit{et al} [2007 {\em Chin. Phys.} {\bf 16} 1450], the field-cooled superconducting phase transition is further investigated by analysing the free energy of the arrays with a simplified symmetrical model. Our analytical result is exactly the same as that obtained in Li's paper by means of numerical calculations. It is shown that the phase transition splits into two branches with either ferromagnetic or anti-ferromagnetic flux ordering, which depends periodically on the strength of external magnetic flux $\phi_{\e}$ through each loop and monotonically on the screen parameter $\beta $ of the loops in the arrays. In principle, the diagram of the phase branches is similar to that of its one-dimensional counterpart. The influence of thermal fluctuation on the flux ordering during the transition from normal to superconducting states of the $\pi $-loop arrays is also discussed.     

Effects of preparation parameters on growth and properties of β-Ga2O3 film

The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.     

Temperature-dependent structure and magnetization of YCrO3 compound

We have grown a YCrO$_3$ single crystal by the floating-zone method and studied its temperature-dependent crystalline structure and magnetization by x-ray powder diffraction and PPMS DynaCool measurements. All diffraction patterns were well indexed by an orthorhombic structure with space group of $Pbnm$ (No. 62). From 36 K to 300 K, no structural phase transition occurs in the pulverized YCrO$_3$ single crystal. The antiferromagnetic phase transition temperature was determined as $T_\textrm{N} = 141.58(5)$ K by the magnetization versus temperature measurements. We found weak ferromagnetic behavior in the magnetic hysteresis loops below $T_\textrm{N}$. Especially, we demonstrated that the antiferromagnetism and weak ferromagnetism appear simultaneously upon cooling. The lattice parameters ($a$, $b$, $c$, and $V$) deviate downward from the Grüneisen law, displaying an anisotropic magnetostriction effect. We extracted temperature variation of the local distortion parameter $\varDelta$. Compared to the $\varDelta$ value of Cr ions, Y, O1, and O2 ions show one order of magnitude larger $\varDelta$ values indicative of much stronger local lattice distortions. Moreover, the calculated bond valence states of Y and O2 ions have obvious subduction charges.