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A novel yellow emitting phosphor Dy3+,Bi3+ co-doped YVO4 potentially for white light emitting diodes
作者姓名:慈志鹏  王育华  张加弛
作者单位:Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China;Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
基金项目:Project supported by the National Natural Science Foundation of China (Grant No.~10874061).
摘    要:Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details.

关 键 词:phosphor  light-emitting  diode  vanadate
收稿时间:5/5/2009 12:00:00 AM

A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes
Ci Zhi-Peng,Wang Yu-Hua and Zhang Jia-Chi.A novel yellow emitting phosphor Dy3+,Bi3+ co-doped YVO4 potentially for white light emitting diodes[J].Chinese Physics B,2010,19(5):57803-057803.
Authors:Ci Zhi-Peng  Wang Yu-Hua and Zhang Jia-Chi
Institution:Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
Abstract:Novel Y$_{1 - x - y}$VO$_{4}$:$x$Dy$^{3 + }$, $y$Bi$^{3 + }$ ($0.01 \le x \le 0.05, 0 \le y \le 0.20$) phosphors for light emitting diode (LED) were successfully synthesised by solid-state reaction. The calculation results of electronic structure show that YVO$_{4}$ has a direct band gap with 3~eV at $G$. The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states. An efficient yellow emission under near-ultraviolet (365 nm) excitation is observed. Compared with the pure YVO$_{4}$:Dy$^{3 + }$ samples, the Dy$^{3 + }$, Bi$^{3 + }$ co-doped samples show a more intensive emission peak (at 574~nm) and a new broad emission band (450--770~nm), due to the $^{4}F_{9 / 2}-{}^{6}H_{13 / 2 }$ transition of Dy$^{3 + }$ and the emission of the VO$_{4}^{3 - }-$Bi$^{3 + }$ complex respectively. The optimum chromaticity index of Y$_{1 - x - y}$VO$_{4}$:$x$Dy$^{3 + }$, $y$Bi$^{3 + }$ ($0.01 \le x \le 0.05, 0 \le y \le 0.20$) is (0.447, 0.497), which indicates that YVO$_{4}$:Dy$^{3 + }$, Bi$^{3 + }$ has higher colour saturation than the commercial phosphor YAG: Ce$^{3 + }$. The effects of concentration of Dy$^{3 + }$, Bi$^{3 + }$, electric states and the photoluminescence properties are discussed in details.
Keywords:phosphor  light-emitting diode  vanadate
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