Floating-zone growth and property characterizations of high-quality La2-хSrхCuO4 superconductor crystals

We have grown underdoped(x=0.11,0.12) and optimally doped(x=0.16) La2 x SrxCuO4 single crystals by the traveling-solvent floating-zone technique.In order to prepare good quality cuprate crystals,we have made much effort to optimize the preparation procedures.For example,we haveadopted the sol-gel route to prepare a highly fine and homogeneous La2xSrxCuO4 precursor powder for fabricating a very dense ceramic feed rod used for the floating-zone growth,and we have also used quite a slow growth rate.The high quality of the grown crystals has been verified by double-crystal x-ray rocking curves,with the full-width-at-half-maximum being only 113-150 arcseconds,which are the best data reported so far for La2xSrxCuO4 crystals.The superconducting critical temperatures of the grown crystals are 30,31 and 38.5 K for x=0.11,0.12 and 0.16 samples,respectively,according to magnetic measurements.     

Anomalous thermal expansion of high-temperature superconductors Bi2Sr2−x LaxCuO6 at low temperatures

The low-temperature thermal expansion of Bi₂Sr_2?x La_xCuO₆ single crystals with different doping levels is measured. The effect of a magnetic field on the thermal expansion of Bi₂Sr_2?x La_xCuO₆ is studied. Anomalous (negative) thermal expansion whose characteristics depend on the doping level of the sample is revealed at T ≤ 10–20 K. It is found that these characteristics are significantly affected by moderately strong magnetic fields (2–4 T). The experimental results can be interpreted within a model relating the anomalous thermal expansion in high-temperature superconductors at low temperatures and the strong effect of the magnetic field on this expansion to the change in the stabilizing role of the charge-density waves in the oxygen sublattice.     

Magnetization anomaly and anisotropy of Bi2Sr2CaCu2−xNixO8 single crystals

We have observed the anomalous magnetization of Bi₂Sr₂CaCu_2−xNi_xO₈ (x = 0 and 0.02) single crystals. Anisotropy decreases with iodine intercalation although it expands the space between CuO₂ layers. Iodine intercalation seems to suppress the magnetization anomaly for Ni = 1% crystals, but not for Ni = 1% substituted crystals. We have discussed these results in terms of the increase of anisotropy by Ni substitution and the dimensional crossover of flux lines. Effects of both oxygen concentration and substitution of a magnetic element for the Cu site on the anisotropy of Bi₂Sr₂CaCu₂O₈ crystals show the same tendency as the case of the YBa₂Cu₃O₇ superconductor.     

Magnetic order in LaEuSrCuO studied [2pt] by Fe Mössbauer spectroscopy

⁵⁷Fe M?ssbauer effect studies of La_1.65Eu_0.20Sr_0.15CuO₄ doped with 0.5 at% ⁵⁷Fe performed in the temperature region 300 K > T > 4.2 K give an onset temperature for magnetic ordering of K. This temperature practically is the same as that found in Nd doped La_2-xSr_xCuO₄. It indicates that the magnetic ordering temperature in the LTT phase of rare earth (RE) doped La_2-xSr_xCuO₄ is independent of the RE moment. The direction of the ⁵⁷Fe magnetic moment in the magnetically ordered state is within the CuO₂ plane, while it has been found to be parallel to the c-axis in Nd doped La_2-xSr_xCuO₄. Received: 23 June 1998 / Accepted: 14 July 1998     

Low-temperature anomalies in thermal expansion of HTSCs: System Bi2Sr2−x LaxCuO6

The data on thermal expansion at low temperatures have been obtained for HTSC single crystals of the system Bi₂Sr_2?x La_xCuO₆ with different doping levels. Anomalous (negative) thermal expansion is observed in the temperature range from 5 to 20 K. It is shown that the anomaly vanishes in an overdoped sample. An anomalously strong effect of magnetic fields of 2–4 T on the negative thermal expansion domain is observed. The effect of field screening, frozen field, doping level, defects and oxygen vacancies on the region of thermal expansion anomalies is investigated. The origin of the observed anomalies in the properties of the system Bi₂Sr_2?x La_xCuO₆, as well as other HTSC systems in which similar anomalies have been observed, is discussed.     

Doping dependence of the vortex glass and sublimation transitions in the high-T<Subscript>c</Subscript> superconductor La<Subscript>2-x</Subscript>Sr<Subscript>x</Subscript>CuO<Subscript>4</Subscript> as determined from macroscopic measurements

Magnetization and ac-susceptibility measurements are used to characterize the mixed phase of the high-temperature cuprate superconductor La_2-xSr_xCuO₄ over a large range of doping (0.075 0.20). The first order vortex lattice phase transition line H_FOT(T), the upper critical field H_c2(T) and the second peak H_sp(T) have been investigated up to high magnetic fields (8 Tesla applied perpendicular to the CuO₂ planes). Our results reveal a strong doping dependence of the magnetic phase diagram, which can mainly be explained by the increasing anisotropy with underdoping. Within our interpretation, the first order vortex lattice phase transition is due to the sublimation (rather than melting) of the vortex lattice into a gas of pancake vortices, whereas the second peak is related to the transition to a more disordered vortex glass state.     

Direct observations of vortices in a high-Tc superconductor (La1-xSrx)2CuO4 by scanning SQUID microscopy

In order to investigate the behavior of vortices in high-T_c superconductors under low magnetic fields, we have performed scanning SQUID microscopy (SSM) on the ab-surfaces of (La_1-xSr_x)₂CuO₄ (LSCO) single crystals at low temperatures. The observed magnetic images clearly demonstrated vortices in units of K₀ (=hc/2e) below T_c. Vortices trapped inside the overdoped LSCO tended to be arranged in a one-dimensional manner, while those in optimally doped crystals were randomly distributed. From the variable-temperature SSM measurements, it was directly visualized that the normal state with regular magnetic-field distribution gradually changed into the inhomogeneous Meissner state, and finally vortices evolved, with decreasing temperature.     

Magnetic order in La2-x Bax CuO4 and La1.6-x Nd0.4 Srx CuO4 for x=0.125

We present μSR experiments on La_2-x Ba_x CuO₄ and La_1.6-x Nd_0.4 Sr_x CuO₄ for x=0.125. Both of these materials order magnetically with T_N\approx30\ K, while a superconducting sample of La_1.4 Nd_0.4 Sr_0.2 CuO₄ showed no evidence for static copper moments. Our results support the conclusion that the so‐called “1/8” anomaly in La_2-x Ba_x CuO₄ is a result of static (pinned) charge segregation. This revised version was published online in August 2006 with corrections to the Cover Date.     

Cu掺杂La0.67Sr0.33CuxMn1-xO3薄膜的光诱导效应研究

分别采用溶胶-凝胶和射频磁控溅射的方法制备了La_0.67Sr_0.33Cu_xMn_1-xO₃（x=0.05, 0.10和0.15）系列块材和薄膜,研究了Cu部分替代对薄膜光诱导特性的影响.实验结果表明随着Cu掺杂量的增加,薄膜的金属-绝缘转变温度向低温方向移动,且导电性降低.在金属相激光作用诱导电阻增大.光致电阻相对变化极大值随着Cu含量的增加而增大,当 关键词： 锰氧化物 光诱导 Cu掺杂 晶格效应     

钙钛矿型稀土锰氧化合物Nd0.5Sr0.4Pb0.1Mn1-x FexO3中Mn位的Fe替代效应

对Nd_0.5Sr_0.4Pb_0.1Mn_1-xFe_x O₃系列多晶样品的结构，磁和转变特性进行了实验研究.在x=0.00—0.10的范围内获得了单相样品，Fe³⁺的替代并没有引起整个系列的结构变化，然而Mn位的掺杂却强烈地抑制了Nd _0.5Sr_0.4Pb_0.1MnO₃的铁 关键词： 磁结构 磁性 P')" href="#">磁转变温度T_P 双交换作用     

Effect of cobalt on the magnetoresistance characteristics of rare-earth doped manganites

The effect of cobalt-doping on the magnetic, transport and magnetoresistance characteristics of La_1-xSr_xMnO₃ was investigated. The results show that the magnetoelectric property of rare-earth doped manganites is greatly affected by substitution of Co for Mn sites. The Curie temperature as well as the magnetic moment decreases with the increase of doping concentration, and the samples exhibit obvious characteristics of the spin glass state. Moreover, the magnetoresistance is evidently modulated by doping concentration, and the relevant temperature dependence is also suppressed. In addition, low-temperature magnetoresistance is significantly promoted as doping concentration increases, which renders a value of approximately 50% in the temperature range of 5--200~K and varies within 12.5%. It can be attributed to the effect of spin scattering, induced by cobalt doping, on the itinerant electrons of Mn ions, thus introducing a spin-disorder region into the ferromagnetic region of double-exchange interaction between neighbouring Mn³⁺ and Mn ³⁺ ions.     

The possible origin of incommensurate spin textures in HTSC

An model of La_2-xSr_xCuO₄ explaining the features of incommensurate spin textures without any assumption of stripe formation is proposed. The foundations of this model are the mechanism of negative-U center formation proposed earlier and the concept of specific ordering of doped ions. It is shown that within the framework of the proposed model the features of “stripe” textures of La_2-xSr_xCuO₄ reflect exclusively the geometrical relations existing in a square lattice and the competition between different types of doped hole ordering.     

La2CuO4+δ和La2-xSrxCuO4系统中的电子输运性质

 本文解释了La₂CuO_4+δ（0≤δ≤0.09）和La_2-xSr_xCuO₄（0≤x≤0.3）两种p型系统含铜稀土氧化物中的电阻和Seebeck系数与温度的依赖关系，在室温以上，一氧大气压下的La₂CuO_4+δ系统趋于失氧；在500 K以上，超导样品显示出失氧的一级相变，并且恢复到反铁磁相。在转变温度T₁≈300 K以下，对0<δ<0.05成份的样品，相分离成反铁磁相和超导相；而在T_cρ≈100 K的温度范围内，超导相进一步分离成富空穴和贫空穴畴。在0.04≤δ≤0.09范围内，T_c处的电阻陡降出现了台阶；我们认为，它反映了电子成对的起伏。在La_2-xSr_xCuO₄系统中，对于成分为01≈300 K以上，空穴的运动是弥散的，但是ΔH_m=0；而对于x≥0.22的样品，经历了从平滑到Fermi液态的转变。成份为0c1范围（其中空穴继续以弥散方式运动）是亚稳的，但是，在T_cρ≤150 K范围，出现了电荷起伏。当样品冷却通过T₁时，对于成份为0.15≤x≤0.2的样品，经历了由弥散到强质量增强巡游电子状态的转变；在T_c处，从均匀的修饰电子的正常态凝聚成超导的载流子对。在超导成份样品的正常态中，不寻常的电子-晶格相互作用，可以归结为在CuO₂面上从更离子性的到共价性的Cu:3d_x²-r²─O:P_σ键合的转变；通过这种转变，轨道杂化和Hubbard U参量随Cu─O键长和Cu原子上的外表局域氧化态都产生灵敏的变化。     

Electronic structure and optical properties of Nb-doped Sr2TiO4 by density function theory calculation

This paper investigates the effect of Nb doping on the electronic structure and optical properties of Sr2TiO4 by the first-principles calculation of plane wave ultra-soft pseudo-potential based on density functional theory(DFT).The calculated results reveal that due to the electron doping,the Fermi level shifts into conduction bands(CBs) for Sr2 Nb x Ti1 x O4 with x=0.125 and the system shows n-type degenerate semiconductor features.Sr2TiO4 exhibits optical anisotropy in its main crystal axes,and the c-axis shows the most suitable crystal growth direction for obtaining a wide transparent region.The optical transmittance is higher than 90% in the visible range for Sr2 Nb 0.125Ti0.875O4.     

A位的Gd掺杂对La0.7Sr0.3MnO3体系磁电性质的影响

通过实验研究了La_0.7-xGd_xSr_0.3MnO₃(x= 0.00，0.10，0.15，0.20，0.30 ，0.40，0.50，0.60，0.70)体系的M-T曲线、M-H曲线、红外光谱、拉曼光谱、ρ-T曲线和M R-T曲线.实验结果表明：随着Gd掺杂的增加，体系从长程铁磁有序向自旋团簇玻璃态和反铁 磁状态转变，高掺杂时的输运性质在其磁背景下发生异常.Gd掺杂引起的磁结构变化和额外 的磁性耦合将导致庞磁电阻效应. 关键词： 磁结构 输运行为 庞磁电阻效应     

Zn1-xMnxS(001)稀磁半导体薄膜的能量稳定性、磁性和电子结构

通过基于广义梯度近似的总能密度泛函理论研究不同Mn掺杂浓度的ZnS(001)薄膜的电学和磁学特性. 计算单个Mn原子和两个Mn原子处于各种掺杂位置及不同的磁耦合状态时的能量稳定性.计算了单个Mn原子掺杂和两个Mn原子掺杂的ZnS(001)薄膜的态密度. 不同掺杂组态的p-d杂化的程度不同. 不同掺杂组态,Mn原子所处的晶场环境不同,所以不同掺杂组态的Mn的3d分波态密度峰的劈裂有很大的不同. 掺杂两个Mn原子时,得到三种稳定组态的基态都是反铁磁态. 分析了以上三种能量稳定的组态中,两个Mn原子在不同磁耦合状态下的3d态密度图. 当两原子为铁磁耦合时,由于d-d电子相互作用,使反键态的态密度峰明显加宽. 随着Mn掺杂浓度的增加,Mn原子有相互靠近,并围绕S原子形成団簇的趋势. 对于这样的组态,Mn原子之间为反铁磁耦合能量更低.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

Si掺杂的铁磁形状记忆合金Co50Ni21Ga29Six的物性研究

成功生长了Co₅₀Ni₂₁Ga₂₉:Si(x=1,2)单晶样品,对其磁性,马氏体相变及其相关性质进行了细致的测量.发现掺Si成分的单晶具有非常迅速的马氏体相变行为、2.5％的大相变应变、大于100 ppm的磁感生应变和4.5％的相变电阻.进一步研究指出,在CoNiGa合金中掺入适量Si元素,能够降低材料的马氏体相变温度,减小相变热滞后,提高材料的居里温度,并使得磁性原子的磁矩有所降低.尤其重要的是Si元素的添加能够增大材料马氏体的磁晶各向异性能,改善马氏体变体的迁移特性,从而获得更大的磁感生应变. 关键词： 铁磁形状记忆合金 Heusler合金 50Ni₂₁Ga₂₉Si_x')" href="#">Co₅₀Ni₂₁Ga₂₉Si_x     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

Microwave Absorption by Charge Density Waves in La2–xSrxCuO4

The results of studying the La_2–xSr_xCuO₄ (x = 0.077−0.195) crystals with the microwave absorption, direct current resistance and magnetic susceptibility measurements are presented. The doping-temperature phase diagram with the boundaries of the areas with charge density waves, superconducting fluctuation and the bulk superconductivity state is plotted. The doping range of the charge density wave existence is found to be broader than that obtained from the X-Ray Diffraction study. It spreads at least down to x = 0.077.