Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBr^{MA=CH3NH3^+}perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.     

Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.     

Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction （XRD）. Morphology of the sample is observed by a scanning electron microscope （SEM）. Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development.     

Grow Large High-Quality Diamonds with Different Seed Surfaces

Large high-quality type Ib diamond crystals have been grown with different seed surfaces by temperature gradient method at 5.5 CPa, 1500-1600K, with NiMnCo alloy as the metal solvent. Compared with {100} as the growth surface, the growth region of large high-quality diamond crystals with {111} as the growth surface at a higher growth rate shifts markedly from lower temperatures （suitable for {100}-facet growth） to higher temperatures （suitable for {111}-facet growth）. However, regardless of different growth surfaces, {100} or {111}, the grown crystals of sheet-shaped shape are most difflcult for metal inclusions to be trapped into, and whether or not matched growth between the seed surfaces and the growth temperatures determines the crystal shapes. In view of the growth rates, large high-quality diamond crystals of sheet-shaped shapes can be grown at a growth rate of above 2.5 mg/h, while the growth rate of large high-quality diamond crystals should not be beyond 1.5 mg/h for tower-shaped crystals.     

Growth and spectroscopic characteristics of Nd-doped PbWO₄ crystal

Nd-doped PbWO4 crystals are grown by using the modified Bridgman method.The spectroscopic properties of the crystals are investigated.The changes of the absorption band at 350 nm are discussed for samples annealed at 740℃ and 1040℃.The radiative lifetime of the 4 F 3/2 level is calculated by using the Judd-Ofelt theory according to the absorption spectrum of 0.5 at.% Nd-doped PbWO 4 crystal.The spontaneous Raman scattering properties of the crystals are analysed.     

Superconductivity in Undoped CaFe_2As_2 Single Crystals

Single crystals of undoped CaFe_2As_2 are grown by an FeAs self-flux method,and the crystals are quenched in ice-water rapidly after high-temperature growth.The quenched crystal undergoes a collapsed tetragonal structural phase transition around 80 K revealed by the temperature-dependent x-ray diffraction measurements.Superconductivity below 25 K is observed in the collapsed phase by resistivity and magnetization measurements.The isothermal magnetization curve measured at 2K indicates that this is a typical type-Ⅱ superconductor.For comparison,we systematically characterize the properties of the furnace-cooled,quenched,and post-annealed single crystals,and find strong internal crystallographic strain existing in the quenched samples,which is the key for the occurrence of superconductivity in the undoped CaFe_2As_2 single crystals.     

Kinetics of Spherical Interface in Crystal Growth

The growth kinetics of spherical NiAl and CuZr crystals are studied by using molecular dynamics simulations.The growth rates of crystals are found to increase with the grain radius. The simulations show that the interface thickness and the Jackson α-factor increase as the growth proceeds, indicating that the interface becomes increasingly rough during growth. Due to the increasing interface roughening, the fraction of repeatable growth sites at interface f is proposed to actually increase in growth. An attachment rate, which is defined as the fraction of atoms that join the crystal interface without leaving, is used to approximate f, displaying a linear increase. With this approximation, we predict the growth rates as a function of the crystal radius, and the results qualitatively agree with those from the direct simulations.     

Metal--Insulator Transition in Ca-Doped Sr14-xCaxCu24O41 Systems Probed by Thermopower Measurements

High quality Sr14-xCaxCu24O41 single-crystals are successfully grown by floating-zone technique, and the trans- port properties are studied. The temperature dependence of resistivity along the c-axis direction is semiconductor- like for x ≤ 10 and it can be fitted by the thermal activation equation p = po exp（ △ /kBT） with kB being the Boltzmann constant and A the activation energy. A break in the slope of thermopower （S） versus the inverse temperature （1 IT） corresponding to the formation of charge-density waves （CD W） is first observed for x ≤ 6. The temperature dependence of thermopower becomes metallic for x ≥ 8 while the resistivity is still semiconductorlike. We propose that the insulation behaviour of the resistivity in the Ca doping range 8 ≤ x ≤ 11 could result from the localization of the charge carriers due to the disorder induced by Ca doping and a revised electronic phase diagram is derived based on our observations.     

Crystals based on solid solution of Ag_(1-x) Tl_xBr_(1-x) I_x for the manufacturing of IR fibers

For the development of fiber optics for the range from 0.2 to 50.0 μm, one needs light-stable, nonhygroscopic,ductile crystals that would be transparent within this spectral range and have a lack of cleavage, and from which the flexible infrared(IR) fibers are extruded. The crystals based on solid solutions of silver and monadic thallium halides meet the conditions listed above. Consequently, by differential thermal and x ray analyses, we study the Tl Br–Tl I phase diagram using the crystals with optimal compositions, which we grow ourselves. We also manufacture light-stable nanocrystalline IR fibers that are transparent at longer wavelengths compared with Ag Cl–Ag Br fibers.     

Growth and spectroscopic characteristics of Nd-doped PbWO4 crystal

Nd-doped PbWO4 crystals are grown by using the modified Bridgman method.The spectroscopic properties of the crystals are investigated.The changes of the absorption band at 350 nm are discussed for samples annealed at 740℃ and 1040℃.The radiative lifetime of the 4 F 3/2 level is calculated by using the Judd-Ofelt theory according to the absorption spectrum of 0.5 at.% Nd-doped PbWO 4 crystal.The spontaneous Raman scattering properties of the crystals are analysed.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

Magnetic order in La2-x Bax CuO4 and La1.6-x Nd0.4 Srx CuO4 for x=0.125

We present μSR experiments on La_2-x Ba_x CuO₄ and La_1.6-x Nd_0.4 Sr_x CuO₄ for x=0.125. Both of these materials order magnetically with T_N\approx30\ K, while a superconducting sample of La_1.4 Nd_0.4 Sr_0.2 CuO₄ showed no evidence for static copper moments. Our results support the conclusion that the so‐called “1/8” anomaly in La_2-x Ba_x CuO₄ is a result of static (pinned) charge segregation. This revised version was published online in August 2006 with corrections to the Cover Date.     

La2CuO4+δ和La2-xSrxCuO4系统中的电子输运性质

 本文解释了La₂CuO_4+δ（0≤δ≤0.09）和La_2-xSr_xCuO₄（0≤x≤0.3）两种p型系统含铜稀土氧化物中的电阻和Seebeck系数与温度的依赖关系，在室温以上，一氧大气压下的La₂CuO_4+δ系统趋于失氧；在500 K以上，超导样品显示出失氧的一级相变，并且恢复到反铁磁相。在转变温度T₁≈300 K以下，对0<δ<0.05成份的样品，相分离成反铁磁相和超导相；而在T_cρ≈100 K的温度范围内，超导相进一步分离成富空穴和贫空穴畴。在0.04≤δ≤0.09范围内，T_c处的电阻陡降出现了台阶；我们认为，它反映了电子成对的起伏。在La_2-xSr_xCuO₄系统中，对于成分为01≈300 K以上，空穴的运动是弥散的，但是ΔH_m=0；而对于x≥0.22的样品，经历了从平滑到Fermi液态的转变。成份为0c1范围（其中空穴继续以弥散方式运动）是亚稳的，但是，在T_cρ≤150 K范围，出现了电荷起伏。当样品冷却通过T₁时，对于成份为0.15≤x≤0.2的样品，经历了由弥散到强质量增强巡游电子状态的转变；在T_c处，从均匀的修饰电子的正常态凝聚成超导的载流子对。在超导成份样品的正常态中，不寻常的电子-晶格相互作用，可以归结为在CuO₂面上从更离子性的到共价性的Cu:3d_x²-r²─O:P_σ键合的转变；通过这种转变，轨道杂化和Hubbard U参量随Cu─O键长和Cu原子上的外表局域氧化态都产生灵敏的变化。     

Magnetic order in LaEuSrCuO studied [2pt] by Fe Mössbauer spectroscopy

⁵⁷Fe M?ssbauer effect studies of La_1.65Eu_0.20Sr_0.15CuO₄ doped with 0.5 at% ⁵⁷Fe performed in the temperature region 300 K > T > 4.2 K give an onset temperature for magnetic ordering of K. This temperature practically is the same as that found in Nd doped La_2-xSr_xCuO₄. It indicates that the magnetic ordering temperature in the LTT phase of rare earth (RE) doped La_2-xSr_xCuO₄ is independent of the RE moment. The direction of the ⁵⁷Fe magnetic moment in the magnetically ordered state is within the CuO₂ plane, while it has been found to be parallel to the c-axis in Nd doped La_2-xSr_xCuO₄. Received: 23 June 1998 / Accepted: 14 July 1998     

The possible origin of incommensurate spin textures in HTSC

An model of La_2-xSr_xCuO₄ explaining the features of incommensurate spin textures without any assumption of stripe formation is proposed. The foundations of this model are the mechanism of negative-U center formation proposed earlier and the concept of specific ordering of doped ions. It is shown that within the framework of the proposed model the features of “stripe” textures of La_2-xSr_xCuO₄ reflect exclusively the geometrical relations existing in a square lattice and the competition between different types of doped hole ordering.     

The anomaly of the specific heat of La2-xSrxCuO4+δ near Tc

The specific heat of three polycristalline samples of La_2-xSr_xCuO_4+δ (x = 0.15, 0.15, 0.16) near T_c was measured with a resolution better than 0.1%. The anomaly at T_c is analysed for fluctuations for the first time. It is well described by a superposition of a mean field step and a contribution due to gaussian fluctuations. By a fit of a Lawrence-Doniach type of model to the specific heat near T_c we estimate ΔC_MF and the anisotropic coherence lengths ξ and ξ⊥ of the superconductor.     

Magnetic interaction in Mg, Ti, Nb doped manganites

An effect of Mn substitution with Me=Mg²⁺, Ti⁴⁺, Nb⁵⁺ in manganites has been investigated by preparing La_0.7Sr_0.3(Mn_1-xMe_x)O₃ and La_1-xSr_x(Mn_{1 - x/2}Nb_x/2)O₃ series. It was established that substitution of manganese with magnesium up to x = 0.16 leads to a collapse of a long-range ferromagnetic order whereas La_0.7Sr_0.3(Mn ^{3 +} _0.85Nb ^{5 +} _0.15)O₃ is ferromagnet with T _C = 123 K and exhibits a large magnetoresistance below Curie point despite an absence of four-valent manganese. Hypothetical magnetic phase diagrams are constructed for La_0.7Sr_0.3(Mn_1-xMe_x)O₃ and La_1-xSr_x(Mn_{1 - x/2}Nb_x/2)O₃. Our results show that Mn³⁺-O-Mn³⁺ exchange interaction is ferromagnetic in the orbitally disordered manganites as well as an increase of Mn⁴⁺ content above 50% from a total amount of manganese ions leads to formation of a spin glass state due to a competition between antiferromagnetic Mn⁴⁺-O-Mn⁴⁺ and ferromagnetic Mn³⁺-O-Mn⁴⁺(Mn³⁺) superexchange interactions. Received 24 January 2002 Published online 9 July 2002     

Relationship between structural phase transition and carrier concentration in La2−x−ySrxRyCuO4 (R = Ce or Tb)

We have studied the relationship between the crystal structure and the carrier concentration in La_2?x?ySr_xCe_yCuO₄ by low-temperature X-ray diffraction method. The analysis for the [1 1 0]_t peak of the tetragonal index confirms that the high-temperature tetragonal phase changes to the low-temperature orthorhombic one in both La_1.89Sr_0.11CuO₄ and La_1.88Sr_0.11Ce_0.01CuO₄. We have also examined the effects of Tb substitution for La-site on the superconductivity and the structure in La_2?x?ySr_xTb_yCuO₄. A dip of the critical temperature T_c(x) due to the 1/8 anomaly and a maximum of T_c(x) at the optimum carrier concentration do not depend on the Tb concentration. This result suggests the possibility that Tb is introduced as the trivalent ion for x = 0.07–0.18.     

La2-xSrxCu1-yZnyO4: Tc and ns/m* correlations seen with muon spin rotation

We report the muon spin rotation experiments on Zn substituted La_1-x Sr_x CuO₄, for four zinc concentrations y=0.0,0.0025,0.005,0.01, at strontium concentrations x=0.15,0.20. We find that T_ c in the optimally doped (x=0.15) and overdoped (x=0.20) 2:1:4 decreases linearly with increasing zinc concentration. Plotted against the planar zinc concentration, the T_c’s of both series seem to fall on the same line. The superconducting carrier density/effective mass ratio, n_ s/m^*, at first decreases linearly, rising above this line for higher zinc concentrations. This behavior may result from the localization of carriers in an area \xi_ab around each zinc atom. This revised version was published online in August 2006 with corrections to the Cover Date.