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通过电子束辐照实验和有限元模拟研究了ITER类型面对等离子体的高纯钨材料在瞬态热冲击下的行为。在新建成的电子束实验平台EMS-60上进行了ITER等离子体发生大破裂不稳定下的模拟实验,实验中样品的基体温度为室温,脉冲宽度为1-5ms,能量负载范围是1~5MJ-m-2。实验后通过扫描电镜观察了样品的再结晶、裂纹及熔化情况,讨论了裂纹形成机理。通过有限元模拟,得出在5ms的脉冲负载下钨的裂纹阈值为1.5MJ-m-2,与实验结果符合很好。     

等离子体驱动碎片加速器中脉冲充气电磁阀

在等离子体碎片加速器中设计和安装了脉冲充气电磁阀,气体脉冲的上升时间小于0.1ms,脉宽为0.2～2ms之间,一次脉冲进气量是1021～1022个气体分子.阀头的运动可用一组偏微分方程来描述,计算结果可以合理解释充气参数与工作电压关系中的跳变的出现.     

长脉冲激光辐照下环氧树脂的热烧蚀规律

 研究了树脂基复合材料中常用的E-51环氧树脂在ms级脉冲激光辐照下热烧蚀率及质量烧蚀率的变化规律,分析了脉冲激光的辐照时间、峰值功率密度、重复频率以及脉宽对烧蚀率的影响。研究结果表明：随辐照时间的增加热烧蚀率逐渐增大,但辐照一定时间后,热烧蚀率趋于稳定;峰值功率密度的增加能明显提高热烧蚀率,但随峰值功率密度的增加,热烧蚀率的增幅减小直至趋于一定值;热烧蚀率不随脉冲激光重复频率和脉宽的变化而改变,当峰值功率密度一定时,热烧蚀率一定,质量烧蚀率与频率和脉宽成正比。     

超快脉冲激光辐照金属薄膜热-力效应的模拟研究

基于双曲双温两步热传导和热电子崩力模型,考虑到超快脉冲激光辐照金属薄膜材料过程中的热-力耦合效应,得到了完全耦合的、非线性的超快热弹性模型.运用具有人工粘性和自适应步长的有限差分算法,以脉宽为100 fs的脉冲激光辐照200 nm厚金膜为例,对薄膜体内的电子-晶格温度及温度梯度、热应力和电子热流进行了数值模拟研究.结果表明：脉冲辐照早期为明显的非平衡加热阶段,同时形成较大的热电子崩力;电子热流出现双峰现象;超快加热引起的热应力是导致薄膜力学损伤的主要原因.     

大功率Nd∶YAG固体激光器

介绍了一台单级输出灯泵浦大功率脉冲Nd∶YAG激光器。该激光器脉宽0.1-10ms可调,频率1-1000hz可调,总注入电功率12kw。试验得到激光器参数脉冲宽度和频率协调改变,可使激光器在整个脉宽范围内都能稳定500w输出;最大单脉冲能量56J;总体电光效率4.2%;光束质量为25mm.mrad;功率稳定性±2%。     

基于固体薄片超连续飞秒光源驱动的高次谐波产生实验

本文报道了采用基于熔石英薄片超连续的少周期飞秒光源驱动高次谐波产生的实验研究.实验中通过将重复频率1kHz的飞秒钛宝石激光放大器所输出的能量0.8mJ、脉宽30fs的脉冲聚焦到7片0.1mm厚的熔融石英片中,得到了覆盖带宽大于倍频程的展宽光谱.利用啁啾镜补偿色散后,经瞬态光栅频率分辨光学开关法测得脉宽为6.3fs,对应约2.3个光学周期.利用压缩后的激光脉冲聚焦作用于惰性气体,并通过调节尖劈插入量改变脉宽,分别测得了分立以及连续的高次谐波截止区信号,结果与6.3fs的脉冲宽度相符合.     

介质参数对受激布里渊散射脉宽压缩的影响

 利用KrF激光和SF₆介质从理论和实验上研究了声子寿命和增益系数等介质参数对SBS脉宽压缩比和能量反射率的影响。理论上采用一维瞬态模型对SBS过程进行数值模拟，考虑了瞬态过程、介质吸收以及泵浦耗空的影响，计算了SBS介质不同参数对脉冲压缩影响的规律。实验表明，在实验参数的变化范围内声子寿命越短、增益系数越小，越有利于脉宽压缩。在0.68MPa下，脉宽压缩比达到8。数值模拟了声子寿命和介质增益系数单独变化时对SBS过程影响的规律，发现在声子寿命和增益系数同时变化时，SBS对泵浦脉冲的压缩有最佳点。     

Z箍缩驱动混合堆第一壁热-力学瞬态响应分析

利用ANSYS程序对Z箍缩驱动聚变-裂变混合堆(Z-FFR)第一壁在瞬态热流加载下的热-力学响应进行了模拟计算，分析了第一壁温度、应力随时间和深度的分布。结果表明，周期性脉冲加载不会导致第一壁产生温度累积效应，第一壁温度峰值409 ℃，出现在钨层表面，钨层最大应力140 MPa，锆合金基底最大应力33 MPa。     

强流脉冲电子束作用下金属锆的微观结构与应力状态

利用强流脉冲电子束 (HCPEB) 技术对金属纯锆进行表面处理, 采用X射线衍射, 扫描电子显微镜及透射电子显微镜详细分析了辐照诱发的表层微观结构和缺陷. X射线分析结果表明, HCPEB辐照后在材料表层诱发幅值为GPa量级的压应力, 并形成{0002}, {1012}, {1120}及{1013}织构. 表层微观结构观察表明, 与其他金属材料不同, HCPEB辐照在材料表层诱发的熔坑数量极少, 多次轰击甚至几乎没有表面熔坑的形成. 此外, 在快速的加热和冷却状态下, 在表面熔化层形成大量的超细晶粒结构, 同时诱发马氏体相变和强烈的塑性变形. 1次HCPEB辐照后表层内形成的变形微结构以位错为主, 孪晶数量较少; 5 次辐照样品的位错密度迅速增高, 孪晶数量也显著增加; 10次辐照后样品中的变形微结构以变形孪晶为主, 且出现二次孪晶现象. 表层晶粒内部变形的晶体学特征不仅决定了表层的织构演化行为, 而且还起到细化晶粒的作用, 为纯锆及锆合金表面强化提供了一条有效的途径. 关键词： 强流脉冲电子束 纯锆 微观结构 应力状态     

脉冲激光辐照氮化硅陶瓷损伤阈值的光谱测量

氮化硅陶瓷具有耐高温、耐腐蚀和耐磨损等优异性能, 可应用于金属材料和高分子材料难以胜任的极端工作环境。但具备这些优良特性的同时也给其加工带来了不便,传统的磨削加工方法效率低,设备损耗严重, 激光辅助加工为其提供了一种新途径。将等离子体光谱法和显微成像法相结合,对脉冲激光辐照氮化硅陶瓷的损伤阈值进行了测量,并分析了损伤机理。实验选用热压烧结氮化硅陶瓷为靶材,参考ISO21254国际损伤阈值测试标准搭建试验系统,采用1-on-1法利用Nd3+∶YAG固体脉冲激光分别在纳秒和微秒脉宽下辐照氮化硅陶瓷,两种脉宽分别选取10个能量密度梯度进行激光辐照,每个能量密度辐照10个点。利用光纤光谱仪采集光谱信息,利用金相显微镜获取显微图像信息,将光谱结果与显微成像结果对比分析, 发现纳秒脉宽下材料一旦损伤光谱上就会出现等离子体峰,通过分析光谱中等离子体峰,元素指认是否含有材料中特征元素即可判断损伤,为了区别空气电离击穿同时测量了空气等离子体光谱对比分析剔除干扰。微秒脉宽下显微图像观察到刚开始损伤时,光谱中只出现较强热辐射谱线并未出现等离子体谱线,进一步增加激光能量密度,光谱中会出现少量等离子体峰,因此不能直接以等离子体峰判断材料损伤阈值。利用金相显微镜观察损伤形貌,纳秒脉宽下在损伤区域内部观察到明显的烧蚀冲击状损伤,光谱呈现出大量等离子体谱线,说明纳秒激光辐照氮化硅损伤机制主要为等离子体冲击波引起的力学损伤效应。微秒脉宽在辐照区域边缘发现热烧蚀痕迹,损伤区内观察到大量熔融物,出现明显热辐射光谱,说明微秒激光辐照氮化硅损伤机制主要是由于长脉宽热积累引起的热损伤效应,随着能量密度增加热辐射谱上叠加有等离子体峰,等离子体峰值强度与损伤程度一致。利用零几率损伤阈值法对两种方法测得结果进行了拟合,分析发现等离子体光谱法更适用于纳秒脉宽下损伤阈值测量,得到结果为0.256 J·cm-2;显微成像法适用于微秒脉宽下损伤阈值测量,得到结果为6.84 J·cm-2。     

The surface modified composite layer formation with boron carbide particles on magnesium alloy surfaces through pulse gas tungsten arc treatment

A novel fabrication process of surface modified composite layer by pulse current gas tungsten arc (GTA) surface modification process was used to deposit B₄C particles on the surface of magnesium alloy AZ31. This method is an effective technique in producing a high performance surface modified composite layer. During the pulse current GTA surface modification process, considerable convection can exist in the molten pool due to various driving forces and the pulse current could cause violent stirring in the molten pool, and the large temperature gradient across the boundary between the GTA modified surface and matrix metal resulted in rapid resolidification with high cooling rates in the molten pool, so that the process result notable grain refinement in the GTA surface modified composite layer. The hardness and wear resistance of the GTA surface modified composite layer are superior to that of as-received magnesium alloy AZ31. The hardness values and wear resistance of GTA surface modified composite layer depend on the GTA process parameters and the B₄C particles powder concentration and distribution. The optimum processing parameters for the formation of a homogeneous crack/defect-free and grain refinement microstructure were established.     

Melting and resolidification of gold film irradiated by nano- to femtosecond lasers

Rapid melting and resolidification of a free-standing gold film subject to nano- to femtosecond laser pulses are investigated using the two-temperature model in conjunction with an interfacial tracking method. The interfacial velocity, as well as elevated melting temperature and depressed solidification temperature, in the ultra-fast phase-change process are obtained by considering the interfacial energy balance and nucleation dynamics. A nonlinear electron heat capacity and a temperature-dependent electron–lattice coupling factor for the rapid phase change are taken into account. Effects of laser pulse width and fluence on melting and resolidification are also studied. PACS 42.62.Eh; 63.20.Kr; 64.70.Dv     

On-line determination of average grain size of polycrystalline silicon from melt duration of molten silicon

We demonstrate a method of on-line determination of the average grain size of polycrystalline silicon (poly-Si) deduced from the melt duration of molten silicon during the phase transformation using an in-situ optical measurement system. Optical measurements revealed that the entire phase transformation processes are melting, nucleation, and resolidification. The average grain size of poly-Si can be directly deduced from the melt duration of molten Si under a thickness uniformity of precursor a-Si thin films below ±5%, a pulse-to-pulse variation in the excimer-laser-beam energy below 2% (standard deviation), and a laser-beam spatial homogeneity below 2.5%.     

The mechanism of nanobump formation in femtosecond pulse laser nanostructuring of thin metal films

The physical mechanisms responsible for the formation of nanobump structures on a surface of a thin metal film irradiated by a tightly focused femtosecond laser pulse are investigated in a large-scale molecular dynamics simulation. The simulation is performed with a combined atomistic-continuum model adapted for an adequate representation of laser-induced processes at the length-scale of the entire laser spot. The relaxation of the compressive stresses generated by the fast laser heating is identified as the main driving force responsible for the separation of the metal film from the substrate and formation of the nanobump. The kinetics of the transient melting and resolidification, occurring under conditions of the fast cooling due to the two-dimensional electron heat conduction, defines the shape of the nanobump. The predictions of the simulation are related to the surface structures observed in femtosecond laser nanostructuring.     

Studies of resolidification of non-thermally molten InSb using time-resolved X-ray diffraction

We have used time-resolved X-ray diffraction to monitor the resolidification process of molten InSb. Melting was induced by an ultra-short laser pulse and the measurement conducted in a high-repetition-rate multishot experiment. The method gives direct information about the nature of the transient regrowth and permanently damaged layers. It does not rely on models based on surface reflectivity or second harmonic generation (SHG). The measured resolidification process has been modeled with a 1-D thermodynamic heat-conduction model. Important parameters like sample temperature, melting depth and amorphous surface layer thickness come directly out of the data, while mosaicity of the sample and free carrier density can be quantified by comparing with models. Melt depths up to 80 nm have been observed and regrowth velocities in the range 2–8 m/s have been measured. PACS 68.18.Jk; 61.10.Nz; 78.47.+p     

Ultrafast solid–liquid–vapor phase change of a gold film induced by pico- to femtosecond lasers

Melting, vaporization and resolidification processes of thin gold film irradiated by a femtosecond pulse laser are studied numerically. The nonequilibrium heat transfer in electrons and lattice is described using a two-temperature model. The solid–liquid interfacial velocity, as well as elevated melting temperature and depressed solidification temperature, is obtained by considering the interfacial energy balance and nucleation dynamics. An iterative procedure based on energy balance and gas kinetics law to track the location of liquid–vapor interface is utilized to obtain the material removal by vaporization. The effect of surface heat loss by thermal radiation was discussed. The influences of laser fluence and duration on the evaporation process are studied. Results show that higher laser fluence and shorter laser pulse width lead to higher interfacial temperature, deeper melting and ablation depths.     

Transient response analysis of photoconductive detector under ultra-short laser pulse radiation

The transient response characteristics of HgCdTe photoconductive detector under the radiation of ultra-short laser pulse have been discussed in detail. Specifically, the transient effect of pulse width to the temperature of electronics and crystal lattice, and corresponding resistance changes of detector are mainly discussed. Based on traditional drift-diffusion model, considering that the temperature of electronics and crystal lattice are different under the ultra-short laser pulse, the double-temperature equation is joined to describe the semiconductor carriers’ dynamics features. Using the numerical method, the transient response characteristics of detector in the case of ultra-short pulse have been worked out. The calculation results show that: When the pulse width is greater than nanosecond pulse, the temperature of electronics will be equal to which of crystal lattice. If the pulse width is less than nanosecond pulse, the temperature of electronics is higher than which of the latter. After the end of a pulse, the rebound resistance of detector will be higher than the dark resistance because of the thermal effect. The heat effect is more obvious when a pulse with narrower width and higher energy density incident to the detector.     

金属火灾熔痕的显微组织及物相成分的实验研究

利用X-射线衍射(XRD)和3D图像处理软件(Image-pro)研究了四种不同火灾类型金属熔痕的显微组织、平均晶粒度、物相组成及其分布规律。结果表明：金属火灾熔痕主要由立方晶系的Cu₂O和胞、枝状的Cu组成。在四种不同的起火方式下,金属熔痕的显微组织和成分有显著的差别：(1)一次短路的火灾熔痕平均晶粒度为3～5 μm,其Cu₂O含量最低;过载熔痕的平均晶粒度与一次短路的类似,但其Cu₂O含量为30%左右;(2)二次短路熔痕中含有一定数量直径较大的微观空洞,平均晶粒度约为30 μm;其Cu和Cu₂O衍射峰出现展宽和辟裂,烧蚀程度最深;(3)火灾熔痕中粗大的Cu₂O等轴晶衍射峰强度最大,且显微组织中几乎没有微观空洞存在。