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1.
利用CST电磁场仿真软件模拟设计了基于开口谐振环-介质-光栅3层结构的超宽谱透射式的太赫兹波正交偏振转换器件,研究了各层透射系数谱以及结构参量对偏振转换的影响,通过计算结构电场和电流分布分析了器件的工作原理.模拟结果表明:设计的器件实现在0.5~2.7THz频谱内,将入射的y偏振太赫兹光转换成x偏振光,转换效率高达99%.由结构电场分布以及表面电流分布推出,入射的y偏振太赫兹光耦合到开口环上,形成振荡的电偶极子,并辐射出太赫兹波x偏振分量.底部光栅层的作用是透过x偏振分量,并将剩余的y偏振光反射回开口环层,并在开口环层和光栅层间形成法布里-珀罗反射进一步提高偏振转换效率.可通过优化介质层厚度、光栅宽度和阵列周期关键参量来优化器件的转换性能.  相似文献   

2.
付亚男  张新群  赵国忠  李永花  于佳怡 《物理学报》2017,66(18):180701-180701
提出了一个基于谐振环结构的宽带且高效的太赫兹线偏振转换器.该结构由金属-电介质-金属三层构成,位于顶层的是基于开口谐振环的超表面,中间为介质层,底部为金属板.实验结果表明,该结构可以在0.59-1.24 THz频率范围内将线偏振的太赫兹波偏振方向旋转90°,转换率超过80%.通过计算该结构在所研究的频率范围内反射光的偏振角和椭圆角,证实了该结构可以在较宽的频率范围内实现高效的线偏振转换.对该结构在偏振转换率高的频率下表面电流和电场进行仿真,分析了高偏振转换率和宽带的机理.同时,研究了该结构的偏振转换率对入射角以及偏振角的依赖性,结果表明该结构在0°-30°入射角范围内、-10°-10°偏振角范围内均有很好的偏振转换性能.  相似文献   

3.
随着太赫兹技术及其应用的快速发展,各类太赫兹控制器件需求也随之增加,作为太赫兹系统重要器件之一,太赫兹波移相器成为当前研究热点。已有移相器存在着尺寸较大、结构复杂、相移量较小等问题,为克服上述缺陷,提出一种光栅-液晶复合结构太赫兹移相器,该器件结构为石英、石墨烯、液晶盒、光栅结构、石墨烯和石英组成。通过改变石墨烯电极上电压,使液晶折射率发生改变,相移器的相位因折射率改变而发生变化,通过控制外加电压可以实现对太赫兹波相移量有效调控。计算结果表明,该移相器在0.39~0.46 THz频率范围内实现了400°相移量,回波损耗小于-11 dB,在频率0.43 THz处,最大相移量达到422°。太赫兹波入射角在0°~30°范围内变化,移相器的相移量保持不变,而且该器件对入射太赫兹波偏振态不敏感。所设计的太赫兹移相器具有相移量大、结构尺寸小等优点,在未来的太赫兹通信、安检、医疗、传感、成像等领域中具有广阔的应用前景。  相似文献   

4.
基于VO2薄膜相变原理的温控太赫兹超材料调制器   总被引:1,自引:0,他引:1       下载免费PDF全文
刘志强  常胜江  王晓雷  范飞  李伟 《物理学报》2013,62(13):130702-130702
利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词: 太赫兹超材料 2薄膜')" href="#">VO2薄膜 调制器 相变  相似文献   

5.
为提高单层石墨烯薄膜电控太赫兹调制器的调制深度,提出一种臂型金属网格微结构与石墨烯结合的太赫兹波透射调制器件.通过臂型金属网格结构激发的共振耦合场增强石墨烯与太赫兹波的相互作用,使石墨烯在外加电压调制下对太赫兹波透射幅度的调制深度获得大幅提升.通过有限元仿真分析了金属结构参数对石墨烯与太赫兹波相互作用增强规律的影响,理论结果表明,臂型网格结构使石墨烯对太赫兹波透射幅度调制深度从7.7%提升到了28.2%.在理论结果的基础上,基于光刻工艺完成了器件的结构制作,实验测试中获得了24%的太赫兹幅度调制深度,且调制深度曲线与理论仿真规律基本一致.  相似文献   

6.
基于氧化铟纳米薄膜及金属线栅的特性,利用紫外激光诱导以金属线栅为衬底的氧化铟纳米结构,研究其对于太赫兹偏振透射的调制特性。实验中在金属线栅上滴入溶于乙醇的氧化铟溶液,并使溶液恰好浸润在金属线栅缝隙中,同时将加热台的温度调至340 ℃,对金属线栅中的氧化铟进行热退火。结果表明,氧化铟-金属线栅线长方向与太赫兹电场偏振方向垂直时,在低强度紫外光的照射下,该样品对太赫兹的透射强度有较为明显的衰减,当紫外光功率密度为7 mW·cm-2时,样品对太赫兹的调制深度可达71%;当氧化铟-金属线栅线长方向与太赫兹电场偏振方向平行时,紫外光激发下的样品对太赫兹的调制效果明显减弱,当紫外光功率密度为7 mW·cm-2时,调制深度约为20%。氧化铟纳米薄膜中存在的氧空位,使该材料对紫外光具有特殊响应。在无紫外光照射下,样品环境中的氧气分子被吸附到氧化铟表面,由于化学反应生成O2-离子态。当用光子能量大于氧化铟禁带宽度的紫外光激发样品时,在氧化铟表面激发出电子空穴对,空穴会被氧化铟表面的O2-离子态和缺陷态束缚,从而释放电子到导带,增强了样品的电导率。在太赫兹波频段内,透过氧化铟样品的太赫兹强度与氧化铟电导率有很好的相关性。金属线栅利用金属表面可存在的自由电子的振荡, 使电场方向与线栅方向平行的太赫兹偏振光激发电子沿线栅方向振荡,当电子与金属晶格中的原子碰撞时,此偏振光发生衰减并伴随辐射;而电场方向与线栅方向垂直的太赫兹偏振光,由于周期性结构的限制,无法激发自由电子振荡, 主要表现出透射特性。结合氧化铟的表面缺陷特性,紫外光可实现作为氧化铟-金属线栅结构的光控偏振开关作用,氧化铟-金属线栅结构偏振器能很好地应用于太赫兹波频段的光控偏振调制。  相似文献   

7.
由人工构造超表面所制成的电磁器件能够实现太赫兹频段的滤波、调控、传感、探测等功能,对太赫兹波在通信、成像领域的应用至关重要.基于纳米印刷技术设计制备了一种柔性透明双螺旋超表面,并利用该超表面构建了一款太赫兹旋转可调滤波器,通过旋转超表面实现太赫兹波透射率的有规律调谐.在旋转90°后,0.52 THz处的透射率由8%增至67%,而0.92 THz处的透射率由68%降至3%,实现调制深度大于88%的主动调控.并且,所提出的纳米印刷超表面具有超薄、柔性、可见光透明的优良性质,有利于太赫兹可调器件的小型化、轻量化及大面积制备.  相似文献   

8.
周璐  赵国忠  李晓楠 《物理学报》2019,68(10):108701-108701
提出了一种基于双开口谐振环单元结构超表面的太赫兹宽带涡旋光束产生器.该结构由金属-电介质两层构成,位于顶层的是基于双开口谐振环单元结构的超表面,底层为介质层.对单元结构阵列进行数值仿真,圆偏振的入射光可以被转换成相应的交叉偏振透射光,通过旋转表层金属谐振环,可以控制交叉偏振透射光具有相同的振幅和不同的相位.这些单元结构按照特定的规律排列,可以形成用以产生不同拓扑荷数的涡旋光束的涡旋相位板.以拓扑荷数1和2为例,设计了两种涡旋相位板,数值分析了圆偏振波垂直入射到该涡旋相位板生成交叉圆偏振涡旋光束的特性.结果表明,在1.39—1.91 THz的频率范围内产生了比较理想的不同拓扑荷数的涡旋光束,且透过率高于20%,最高可达到24%,接近单层透射式超表面的理论极限值.  相似文献   

9.
孟田华  赵国忠 《光子学报》2013,(9):1061-1064
利用太赫兹时域光谱系统,测量了3种在硅衬底上淀积厚度为100nm金膜的椭圆环阵列结构后,并且分析了各样品在太赫兹波段的透射增强现象及产生机理.结果表明:在整个太赫兹波段,此组结构样品的透射系数均在0.68以上,产生明显的透射增强;当太赫兹波的偏振方向与椭圆环长轴之间的夹角为90°时,3个样品在1.67THz处的共振峰是由于短轴方向的电子形成偶极子振荡与入射太赫兹波进行耦合产生的;夹角为0°时,周期阵列样品无明显共振峰,而分形阵列样品的共振峰则不如斑图阵列样品的明显;样品结构的对称性越差,透射谱的信息越丰富.此外,分析相位差谱也验证了共振增强透射的存在.  相似文献   

10.
非线性克尔效应对飞秒激光偏振的超快调制   总被引:1,自引:0,他引:1       下载免费PDF全文
研究了近红外飞秒激光的偏振在太赫兹频率的超快调制.利用抽运-探测光谱技术,通过改变两个脉冲之间的延迟时间可以控制光脉冲的旋转角.在Li:NaTb(WO42磁光晶体中观察到探测光的偏振随延迟时间变化的高速振荡,振荡信号的中心频率为0.19 THz.这种超快偏振调制现象可以解释为,抽运-探测实验构置中,前向传播的抽运光诱导的光学克尔非线性引起被晶体远端表面所反射的背向传播的探测光脉冲偏振面的额外旋转.通过改变抽运光的圆偏振旋性可以控制探测光调制信号的相位和振幅.实验结果表明,非线性光学克尔效应可以作为一种全新的手段,在磁光晶体中实现近红外飞秒激光以太赫兹频率的超快偏振调控.这将在超快磁光调制器等全光器件中得以应用.实验结果将有助于偏振依赖的超快动力学过程的研究.  相似文献   

11.
In this paper, an ultra-wideband chirality selective metastructure absorber is proposed that enables differential absorption and reflection of circularly polarized waves in the terahertz (THz) range. The structure achieves circular dichroism (CD) by using asymmetrically split metal rings as fundamental meta-atoms. Most critically, the high impedance surface and air-resonant cavities are inserted separately in the meta-atoms and dielectric substrate to enhance CD and broaden the bandwidth of absorption. The metastructure absorber can achieve more than 90% absorption of right circularly polarized waves at 0.675–1.244 THz, and it can maintain more than 90% reflection of left circularly polarized waves at 0.607–1.229 THz without changing the direction of rotation. Besides, its CD can reach more than 80% at 0.687–1.213 THz with a relative bandwidth of 55.3%. Spin-selective absorption, which is closely related to breaking chiral symmetry, is investigated through power loss distribution, wide-angle incidence, and scan parameter optimization. The proposed strategy is further validated in the THz band, and the polarization selection and manipulation techniques can be applied to chiral sensing/radio-thermometry, circular polarization detectors/lasers, and molecular spectroscopy.  相似文献   

12.
设计了一种基于双芯负曲率光纤的新型低损耗大带宽太赫兹偏振分束器,该器件以环烯烃共聚物为基底,沿圆周等间距分布着12个含内嵌管的圆形管,通过上下对称的两组外切小包层管将纤芯分成双芯.采用时域有限差分法对其导模特性进行分析,详细研究了各个参数对其偏振分束特性的影响,分析了该偏振分束器的消光比、带宽、传输损耗等性能.仿真结果表明:当入射光频率为1 THz,分束器长度为6.224 cm时, x偏振光的消光比达到120.8 d B,带宽为0.024 THz, y偏振光的消光比达到63.74 d B,带宽为0.02 THz,传输总损耗低至0.037 d B/cm.公差分析表明结构参数在±1%的偏差下,偏振分束器仍然可以保持较好的性能.  相似文献   

13.
Polarized terahertz (THz) wave generation is of great significance for chiral and anisotropic sensing applications. However, how to manipulate amplitude, polarization, and ellipticity of the THz generation is still a fundamental challenge. Herein, polarized THz wave generation is achieved from a bilayer metamaterial consisting of T-shaped structure (TSS) and split resonator rings (SRRs) by combining Maxwell and hydrodynamic equations. The elliptically polarized THz wave can be synthetized directly from horizontally and vertically polarized THz components due to the orthogonal nonlinear photocurrents along the arm-directions of TSS and SRRs, respectively. Besides, the ellipticity and the orientation angle of the THz polarization ellipse can be modulated by the twist angle between the SRRs and TSS layers. The maximum ellipticity can reach 0.34 while the orientation angle is tunable from −0.45 to 0.48π by tuning the twist angle. This work proposes an interlayer coupling method for the polarized THz sources based on metamaterials in potential circular dichroism and chiral sensing applications.  相似文献   

14.
Coupled dielectric‐metal gratings are investigated for broadband terahertz (THz) wave polarization conversion and asymmetric transmission by the experiments and numerical simulations, which are composed of the subwavelength Si grating and metallic wire grating layers. The dielectric grating layer with a large artificial birefringence and low dispersion is employed as a phase engineered waveplate, and the metal wire grating arranged with a 45° angle to the dielectric grating is utilized as a high‐efficiency polarizer. Due to the subwavelength integration, this coupled grating presents a local resonance coupling mechanism between dielectric and metal gratings, which greatly enhances the polarization rotation and expands the bandwidth, not a simple combination with dielectric and metallic gratings. The results demonstrate that a broadband asymmetric transmission with an extinction ratio of 30dB from 0.2 to 1.2 THz is achieved and the highest transmission of 90% can be obtained. It provides a simple way towards practical applications for THz artificial dispersion materials, polarization control and asymmetric transmission.  相似文献   

15.
Haotian Du 《中国物理 B》2022,31(6):64210-064210
A switchable terahertz (THz) polarization converter based on vanadium dioxide (VO2) metamaterial is proposed. It is a 5-layer structure which containing metal split-ring-resonator (SRR), the first polyimide (PI) spacer, VO2 film, the second PI spacer, and metal grating. It is an array structure and the period in x and y directions is 100 μm. The performance is simulated by using finite integration technology. The simulation results show that, when the VO2 is in insulating state, the device is a transmission polarization converter. The cross-linear polarization conversion can be realized in a broadband of 0.70 THz, and the polarization conversion rate (PCR) is higher than 99%. Under thermal stimulus, the VO2 changes from insulating state to metallic state, and the device is a reflective polarization converter. The linear-to-circular polarization conversion can be successfully realized in a broadband of 0.50 THz, and the PCR is higher than 88%.  相似文献   

16.
谷文浩  常胜江  范飞  张选洲 《物理学报》2016,65(1):10701-010701
基于锑化铟材料在太赫兹波段的横向磁光效应,提出了一种金属-空气-锑化铟-金属非对称周期性亚波长线栅阵列结构的表面等离子体器件,研究了外加磁场和温度对不同频率透射波聚焦特性的影响.结果表明,在外加磁场强度B=0.6 T、温度T=172 K时,可实现0.8 THz透射光束的聚焦,焦点处能流密度透过率比没有外加磁场时增强28倍.对于不同频率入射波,通过主动调节磁场强度和温度,能实现从0.4—0.8 THz宽频带的聚焦,而且焦点处的透过率相比于无外加磁场时的普通狭缝聚焦透过率增强20倍以上,该器件是太赫兹波段理想的可调谐、宽频段、高透过率的聚焦器件.  相似文献   

17.
Broadband antireflection coatings for passive terahertz (THz) components are extremely important in the application of THz technology. Metallic nano‐films are commonly used for this purpose. Here a new approach to realize polarization independent broadband antireflection in THz range, based on a meta‐surface design is experimentally demonstrated. The internal reflection of a broadband THz pulse (spectral bandwidth of 0.06 – 4 THz) at a Si/air interface can be fully suppressed with a Cr square mesh with deep‐subwavelength dimensions. Small nonuniformity of the meta‐surface structure can enhance the tolerance on structural parameters for achieving the AR condition. The design concept is applicable to other metals and frequency ranges as well, which opens a new window for future AR coatings.  相似文献   

18.
In this paper, a metastructure multifunctional device for circular-to-linear polarization conversion (PC) and perfect absorption is proposed in which the electrical conductivity of the silicon material is controlled by light, thus changing the function of the device. The paper also explores three methods of optimizing bandwidth and their mechanisms, which are analyzed by means of current and energy density diagrams. The unit structure of this device adopts a 2 × 2 array, which is used for differentiated reflection of circular polarization waves, and forms linear polarization waves after reflection. In the other state, ultrawideband absorption can be achieved by changing the conductivity of silicon by external optical pumping, and the bandwidth is widened by inserting air resonators. In general, the device can form a PC at 0.89–1.31 THz with a relative bandwidth of 38% when there is no illumination. The resulting linear polarization wave has an axial ratio greater than 19 dB. When the silicon is excited by light resulting in a stable conductivity of around 9000 S m−1, the absorption band is 0.89–2.01 THz, the relative bandwidth is 77%, and the absorption rate is above 90%. This device can be used for communication, electromagnetic cloaking, and modulation.  相似文献   

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