p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂13 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为175 cm^-1,与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂13 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义. 关键词： 最大模式增益 p型掺杂 InAs/GaAs量子点激光器     

Nonlinear dynamics of doped semiconductor quantum dot lasers

We discuss the influence of wetting layer doping on the turn-on dynamics of a quantum dot (QD) laser by using a microscopically based rate equation model which separately treats the dynamics of electrons and holes. As the carrier-carrier scattering rates depend nonlinearly on the wetting layer carrier densities we observe drastic changes of relaxation oscillation frequency and damping if the wetting layer is doped. We gain insight into the nonlinear dynamics of the QD laser by a detailed analysis of various sections of the five-dimensional phase space focusing on changes in the coupling between QD electron and holes dynamics.     

Effect of gain compression above and below threshold on the chirp characteristics of 1.55 µm distributed feedback laser

We have observed and quantified the adiabatic and transient chirp in a directly modulated laser. The wavelength excursion for both chirp terms is well characterized by the phase rate equation model that describes the chirp behavior. In this study, the effect of gain compression and linewidth enhancement factor, below and above threshold, on the chirp characteristics is investigated by simulation. We have observed the trade-off between the two chirp terms i.e., transient part of the chirp is reduced by the strong damping introduced by gain compression, while as the adiabatic part increases with gain compression. We have observed that above threshold the α-factor increases with bias current, which is attributed to the enhancement of gain compression coefficient. It is shown that the higher the maximum gain, the lower the effects of gain compression and lower the α-factor. Finally, the effects of gain compression on the transmission characteristics are investigated.     

激光测深系统中大动态范围压缩技术的实验研究

分析了分通道、距离选通、光电倍增管变增益、正交偏振等多种技术相结合的方法,用以改善机载激光测深系统中激光回波的动态范围。并研制了相应的变增益部件,开展了水池试验以及海上现场试验。试验结果表明,多种方法相结合的技术可对水底信号的动态范围进行有效压缩,满足机载测深系统对浅海测量的动态范围要求;但正交偏振技术对信号测量压缩的改善效果并不明显。报道了试验过程中出现的光电倍增管后脉冲对水深测量的影响。对动态范围压缩技术进一步研究提供了有价值的参考。     

Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.     

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.     

The impact of nonequilibrium gain in a spectral laser diode model

We describe the inclusion of nonequilibrium gain into a self-consistent 2.5D CW spectral laser diode model and report on the use of this model to investigate the origin of gain compression in a 975 nm high-brightness tapered QW laser diode. Nonequilibrium gain is calculated using a dynamic gain model, which simulates the dynamic relaxation of the quantum well carrier energy distributions under the influence of steady-state electrical and optical excitation. Calculated gain and spontaneous emission spectra are included in the laser model via parameterised look up tables. Both simulated and experimentally measured intracavity spontaneous emission spectra show an increased carrier density and a blue-shift of the gain maximum with increasing bias caused by carrier heating and spectral hole burning. The accurate incorporation of nonequilibrium gain compression is therefore vital for the accurate prediction of the operating characteristics of these devices and for the experimental determination of the active region temperature.     

Nonlinear diffraction in a quantum-dot system with allowance for the Hubbard interaction

The propagation of monochromatic laser radiation in a volume system of quantum dots (QDs) that are tunnel-coupled along one axis is considered. The electron energy spectrum of the QD system is modeled in the tight-binding approximation with allowance for the Coulomb interaction of electrons in the Hubbard model. The electromagnetic field of laser radiation in a QD system is described quasi-classically by Maxwell equations; as applied to this problem, they are reduced to a non-one-dimensional wave equation for the vector potential. As a result of the analysis of the wave equation in the approximation of varying amplitudes and phases, an effective equation describing the electromagnetic field in a QD system is obtained and numerically solved. The influence of the parameters of the system and the amplitude and frequency of the field of incident laser radiation on the character of its propagation is investigated. Nonmonotonic dependences of the factor characterizing the laser beam diffraction spread on the parameters of the electron energy spectrum of the system are obtained.     

A self-consistent model for a SOA-based fiber ring laser including the mode-locked pulse properties

In this paper, we present a self-consistent model of an optically mode-locked semiconductor fiber ring laser. The fiber laser uses a semiconductor optical amplifier (SOA) as the gain medium, while mode-locking is achieved by its gain modulation, via an external optical pulsed signal. We solved the model analytically developing a novel technique, where we have assumed double saturation of the SOA by both the mode-locked and the externally introduced pulsed signal. The study revealed the locus of the laser parameters to achieve mode-locking. In particular, it was found that SOA gain and energy of the externally introduced signal are two critical parameters that must simultaneously set properly for exact mode-locking. Another outcome of our analysis is that the study of the chirp parameter should be carried out keeping the nonlinear terms of the SOA gain. We have also investigated a slightly detuning regime of operation that revealed a fast change of the mode-locking process.     

Demonstration of microwave frequency shifting by use of a highly chirped mode-locked fiber laser

We report an experimental demonstration of a photonic microwave shifter using a highly chirped mode-locked fiber laser. The system is based on dispersive compression or expansion of highly chirped optical pulses that are amplitude modulated by the microwave signal. Using this technique, we demonstrated frequency shifting of a microwave signal from 10 GHz down to 5 GHz and up to 25 GHz.     

The statistical fluctuation of a single-mode laser system driven by coloured pump noise with signal modulation and the quantum noise with cross-correlation between its real and imaginary parts

Using the linear approximation method, this paper studies the statistical property of a single-mode laser driven by both coloured pump noise with signal modulation and the quantum noise with cross-correlation between its real and imaginary parts, and calculates the steady-state mean normalized intensity fluctuation and intensity correlation time. It analyses the influences of the modulation signal, the net gain coefficient, the noise and its correlation form on the statistical fluctuation of the laser system respectively. It is found that the coloured pump noise modulated by the signal has a great suppressing action on the statistical fluctuation of the laser system; the pump noise self-correlation time and the specific frequency of modulation signal have the result that the statistical fluctuation tends to zero. Furthermore, the `colour' correlation of pump noise has much influences on the statistical fluctuation of the laser system. Increasing the intensity of pump noise will augment the statistical fluctuation of the laser system, but the intensity of quantum noise and the coefficient of cross-correlation between its real and imaginary parts have less influence on the statistical fluctuation of the laser system. Therefore, from the conclusions of this paper the statistical property can be known and a theoretical basis for steady operation and output of the laser system can be provided.     

Theory of non-Markovian dynamics in resonance fluorescence spectrum

We present a detailed theoretical study of non-Markovian dynamics in the fluorescence spectrum of a driven semiconductor quantum dot (QD), embedded in a cavity and coupled to a three-dimensional (3D) acoustic phonon reservoir. In particular, we investigate the effect of pure dephasing on one of the side-peaks of the Mollow-triplet spectrum, expressed in terms of the off-diagonal element of the reduced system operator. The QD is modeled as a two-level system with an excited state representing a single exciton, and ground state represents the absence of an exciton. Coupling to the radiative modes of the cavity is treated within usual Born–Markov approximation, whereas dot-phonon coupling is discussed within non-Markovian regime beyond Born approximation. Using an equation-of-motion technique, the dot-phonon coupling is solved exactly and found that the exact result coincides with that of obtained within Born approximation. Furthermore, a Markov approximation is carried out with respect to the phonon interaction and compared with the non-Markovian lineshape for different values of the phonon bath temperature. We have found that coupling to the phonons vanishes for a resonant pump laser. For a non-resonant pump, we have characterized the effect of dot-laser detuning and temperature of the phonon bath on the lineshape. The sideband undergoes a distinct narrowing and acquires an asymmetric shape with increasing phonon bath temperature. We have explained this behavior using a dressed-state picture of the QD levels.     

基于现役装置的冲击点火可行性概念研究

以冲击点火物理特性的研究为基础, 分析冲击点火对高功率激光驱动器的物理需求, 然后从总体层面概括给出基于现役装置(神光III等间接驱动中心点火高功率激光装置) 研究冲击点火面临的关键技术问题. 研究表明, 基于现役装置的冲击点火主要面临两个层面的问题, 首先是非均匀光路排布下实现均匀辐照的工程层面问题, 其次是在现役装置上高效实现冲击点火激光脉冲的激光技术层面问题. 通过研究 分别对两个层面的问题提出相应的解决思路, 为后续研究奠定基础.     

40J激光装置研制

 报道了一台输出能量在40J量级的激光装置。该装置从星光Ⅱ激光装置分光作为光源,由放大器链、能源系统和支撑桁架等三大部分构成。对整个激光装置的模拟计算结果表明：装置的增益能力足够输出40J,B积分满足ΔB小于1.8的要求。研制了一种全腔水冷新型放大器,对其小信号增益系数和增益均匀性进行了测量,实验得出增益系数β为0.034cm ^-1,增益均匀性为91.84%。结果表明这种放大器完全能满足此激光装置的设计要求。     

基于光束偏转的扫描式宽带光参量啁啾脉冲放大

光参量啁啾脉冲放大(OPCPA)是超短激光脉冲领域的重要技术之一,增大增益带宽对提高OPCPA的转换效率、实现宽带光参量放大具有重要的意义.本文将光束偏转和非共线OPCPA有机结合,提出了基于光束偏转的扫描式宽带OPCPA模型.分析了通过光束偏转来时刻改变非共线角,以保证各频率成分的相位匹配,从而增大增益带宽的基本原理.采用提出的扫描式宽带OPCPA,针对800 nm中心波长、带宽约为100 nm信号光的光参量放大进行了数值计算.结果表明:经过扫描式OPCPA后,信号光的带宽与放大之前几乎相同,光谱没有窄化;扫描式OPCPA比固定非共线角方式的放大极大地增加了增益带宽和转换效率,实现了宽带的光参量放大;要满足信号光各频率成分的相位匹配,达到最大的增益带宽和转换效率,需要尽量减小加载到钽铌酸钾(KTa_(1-x) Nb_xO_3, KTN)电光晶体上的电压抖动和电压延时.     

Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition between the inhomogeneous broadening (due to the QD size dispersion) and the homogenous broadening as well as a nonlinear gain variation associated to a multimode laser emission. The double laser emission and the temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is studied both experimentally and theoretically.     

Integrated quantum-dot laser devices: modulation stability with electro-optic modulator

In view of integrated nanostructured devices we investigate the impact of an electro-optic modulator (EOM) section on the light dynamics of an adjacent quantum-dot (QD) laser. Using the Lang–Kobayashi model we analyze the nonlinear dynamics of the coupled system. We determine the effect of the detuning between the optical transition of the EOM and the QD laser and the influence of the material model of the EOM on the QD laser dynamics. The model of the EOM is based on Maxwell–Bloch equations with voltage dependent loss rates.     

Femtosecond hybrid mode-locked semiconductor laser and amplifier dynamics

We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers.     

Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.