少子寿命和表面形貌与多孔硅发光性能的关系

研究了不同时间腐蚀的多孔硅的光致发光性能与多孔硅的表面形貌和少子寿命之间的关系。结果表明,多孔硅的发光来自与氧空位有关的缺陷,而多孔硅表面的氢原子能够钝化多孔硅表面的非辐射中心从而提高多孔硅的发光效率。多孔硅的空隙度随腐蚀时间的延长而增大,这也导致了多孔硅的少子寿命的降低,从而造成多孔硅的光致发光效率随多孔硅空隙度的增大以及少子寿命的降低而提高。另外,原子力显微照片表明长时间的腐蚀使多孔硅表面层被化学腐蚀,从而降低了多孔硅表面的粗糙度。     

Field emission behavior of cuboid zinc oxide nanorods on zinc-filled porous silicon

Single-crystalline zinc oxide (ZnO) nanorods with cuboid morphology have been prepared on the zinc-filled porous silicon substrate using a vapor phase transport method. Field-emission measurements showed that the turn-on field and threshold field of the cuboid ZnO nanorods film were about 3.2 and 8.2 V/μm respectively. From the emitter surface, a homogeneous emission image was observed with emission site density (ESD) of ∼10⁴ cm⁻². The better emission uniformity and the high ESD may be attributed to a large number of ZnO nanocrystallites as emitter on the surface of the nanorod end contributing to emission.     

Optimization of porous silicon preparation technology for SERS applications

A series of porous silicon samples prepared at different etching parameters, namely etchant composition, etching time and current density, was investigated as substrates for surface-enhanced Raman scattering (SERS). Silver nanostructures were deposited on porous silicon by immersion plating method and Rhodamine 6G was used as analyte. The relation between the etching parameters, morphology of porous silicon surface and its SERS efficiency after silver deposition is examined. We show that a high HF content in the etchant allows the formation of a film with close-packed silver nanocrystals, which possess strong surface enhancement properties.     

Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements.     

Effect of surface modification by thermally oxidization and HF etching on UV photoluminescence emission of porous silicon

Photoluminescence of porous silicon (PS) is instable due perhaps to the nanostructure modification in air. The controllable structure modification processes on the as-prepared PS were conducted by thermal oxidization and/or HF etching. The PL spectra taken from thermally oxidized PS showed a stable photoluminescence emission of 355 nm. The photoluminescence emission taken from both of PS and oxidized porous silicon (OPS) samples etched with HF were instable, which can be reversibly recovered by the HF etching procedure. The mechanism of UV photoluminescence is discussed and attributed to the transformation of luminescence centers from oxygen deficient defects to the oxygen excess defects in the thermal oxidized PS sample and surface absorbed silanol groups on PS samples during the chemical etched procedure.     

The conversion of wettability in transparent conducting Al-doped ZnO thin film

We report on the systematic changes of surface wettability in one of the most promising transparent conducting oxide materials, Al-doped ZnO (AZO) thin films. It was revealed that the characteristic surface wettability, which would make a key role in adhesion with other layers of optoelectronic device, can be largely changed by Al concentrations and film growth temperature. Keeping the electrical conductivity constant, the water contact angle (WCA) of a 2 mol% AZO film was changed by about 50 ^°C depending on the surface roughness. In the samples grown at 300 ^°C, the roughness enhancement was large and a hydrophobic surface formed, whereas in the samples grown at 500 ^°C a hydrophilic surface formed. We attributed the variation in surface wettability with growth temperature to changes in surface morphology. This result suggests that 2 mol% Al doping concentration can be considered as a critical concentration in changing of surface morphology of AZO as well as in electrical properties.     

Stable ultraviolet photoluminescence emission in n-type porous silicon

This very paper is focusing on the investigation of porous silicon preparation with n-type silicon wafer by means of electrochemical anodization in the dark and, particularly, on its stable ultraviolet photoluminescence emission. A lateral electrical potential was applied, for this purpose, on silicon wafers, driving the electrons away and letting holes appear on the surface of the silicon wafer to enhance the electrochemical etching process. Characterizations have been made with scanning electronic microscope, fluorescence spectrophotometer and Fourier transform infrared spectroscope. An ultraviolet photoluminescence emission of 370 nm is found in the as-prepared n-type porous silicon, which seems to be well associated with the formation of oxygen-related species (twofold coordinated silicon defect) during the anodic oxidation. The result characterized by photo-bleaching performance indicates that the ultraviolet photoluminescence emission is so stable—only 7% reduction within 3600 s. Meanwhile the morphology of as-prepared n-type porous silicon is investigated.     

Tuning the cathodoluminescence of porous silicon films

We have obtained intense cathodoluminescence (CL) emission from electron beam modified porous silicon films by excitation with electrons with kinetic energies below 2 keV. Two types of CL emissions were observed, a stable one and a non-stable one. The first type is obtained in well-oxidized samples and is characterized by a spectral peak that is red shifted with respect to the photoluminescence (PL) peak. The physically interesting and technologically promising CL is however the CL that correlates closely with the PL. Tuning of this CL emission was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. We also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the PL that follows the electron irradiation.     

Rh6G/氧化多孔硅复合膜的荧光光谱

为了发展性能良好的固体染料激光器,多孔介质中镶嵌激光染料是一种可行的途径。将氧化多孔硅作为基质材料,通过浸泡的方式将激光染料Rh6G嵌入其中,形成Rh6G/氧化多孔硅复合膜,对比研究了Rh6G在无水乙醇、多孔硅、多孔氧化硅中的荧光特性。结果表明,经高温氧化后,氧化多孔硅透明度提高,其荧光强度明显变弱,在复合膜中已检测不到其荧光行为。相比于在无水乙醇溶液中,在氧化多孔硅中Rh6G发射光谱的半峰全宽有所展宽,峰值波长略有红移,对称性大为提高,具有类似单体发光特性,这种现象与纳米孔对Rh6G的聚集程度的限制有关。     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

Luminescence and photoconductivity properties of porous polycrystalline silicon

In recent years, the photoluminescence and the photoconductivity of porous silicon were comprehensively studied. But the photoluminescence and the photoconductivity of porous polycrystalline silicon have not been wholely studied. In this paper, the results showed that luminescent property of the samples prepared by poly-crystal silicon wafers may be related to the defects on Si complexes surface, which can be proved by microwave-detected photoconductivity decay measurements. Furthermore, the luminescence of samples was disappeared under the external illumination, which may be related to the elimination of luminescent-centers. In addition, the conductivities of the samples were dependent on etched time and current density, and the large porosity of samples led to isotropic photoconductivity, which may be related to the change of energy band structure of the devices.     

Surface and bulk structural properties of nanostructured porous silicon prepared by electrochemical etching at different etching time

Nanostructured porous silicon (NPSi) is versatile nanomaterials, and attractive area in device application after visible luminescence was observed from NPSi by Canham (1990). NPSi has been prepared by electrochemical techniques with silicon wafer as a based material. The electrolyte solution consists of ethanol and hydrofluoric acid at volume ratio of 1:1. The etching time was varied while other preparation parameters were fixed to produce different porosity of NPSi samples. The structural properties of samples were measured using field emission scanning electron microscope and Raman spectrometer. The surface structural study has shown the surface roughness increase at inertial stage but decrease gradually with longer etching time. However, nanostructured surface was decreased with increasing of etching time. From side view measurement, the nanopillar of NPSi becomes smaller size while increase of etching time. The crystallinity of PSi is observed by Raman scattering varied with different etching time. The photoluminescence measurement will be carried out to study the correlation between optical and structural properties.     

Field emissions of graphene films deposited on different substrates by CVD system

<正>Graphene films are deposited on copper(Cu) and aluminum(Al) substrates,respectively,by using a microwave plasma chemical vapour deposition technique.Furthermore,these graphene films are characterized by a field emission type scanning electron microscope(FE-SEM),Raman spectra,and field emission(FE) I-V measurements.It is found that the surface morphologies of the films deposited on Cu and Al substrates are different:the field emission property of graphene film deposited on the Cu substrate is better than that on the Al substrate,and the lowest turn-on field of 2.4 V/μm is obtained for graphene film deposited on the Cu substrate.The macroscopic areas of the graphene samples are all above 400 mm~2.     

Surface properties of nano-Al2O3 film and its application in the preparation of morphine electrochemical sensor

In this study, alumina nanoparticles and film were synthesized by sol–gel method and thermally grown. The chemical composition, morphology, and structural properties of the grain nanostructures of the nanoaggregate aluminum atoms on the silicon surface are characterized by X-ray diffraction, energy dispersive spectroscopy, and scanning electron microscopy techniques which show that the atomic ratio of Al and O elements is about 60:45 and the mass ratio is about 70:31. This point reveals that there is no intermediate layer between Al₂O₃ and the silicon substrate. In conclusion, this nanoparticle shows good electron conductivity at the surface of a carbon paste electrode that shows its ability in the preparation of a nanosensor in morphine analysis. The linear response range and detection limit were found to be 0.1–550 and 0.03 μmol L^?1, respectively. The proposed sensor was successfully applied for the determination of morphine in real samples such as human urine and drug.     

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.     

多孔硅的表面碳膜钝化

报道对多孔硅（ＰＳ）进行碳膜（ＣＦ）钝化处理的结果。红外吸收光谱表明,经钝化处理样品的表面由Ｓｉ－Ｃ、Ｓｉ－Ｎ和Ｓｉ－Ｏ键所覆盖;荧光我谱表明,经钝化处理的样品较未处理的样品发光强度提高４￣４．５倍,且发光峰位明显蓝移;存放实验显示,经钝化处理的样品发光强度稳定、发光峰位不变。这些结果表明正丁胺可以在多孔硅表面形成优良的钝化碳膜,是一种十分有效的多孔硅后处理途径。     

Effect of Au film and absorption groups on minority carrier life of porous silicon

In this paper, the samples were prepared with or without metal assistance in different time. The effect of Au film and absorption groups on minority carrier life of porous silicon was studied by using μ-PCD measurements, and the result was further proved by FTIR spectra and SEM images. The results were showed that the existed hydrogen-related groups on the surface of porous silicon would decrease the minority carrier life and the grid Au film also can decrease the minority carrier life. The minority carrier life may be controlled by the more effective factor, metal elements or absorption groups.     

Increased porous morphology and thermal degradation of electron beam-irradiated PVDF-HFP/LiCLO4 polymer electrolyte

The effect of 8?MeV energy electron beam radiation at 40, 80 and 120?kGy dosage on surface morphology and thermal properties of lithium perchlorate-doped poly (vinylidene fluoride-co-hexafluoropropylene) polymer electrolyte films have been studied. The field emission scanning electron microscopic image shows small-porous structured morphology for unirradiated film, but it changed drastically into large and deep porous structure as well as the size of spherulites is reduced for 120?kGy confirming the influence of irradiation on morphology. The atomic force microscope reveals the significantly changed surface roughness of unirradiated film from 116.8 to 123.4?nm with a hill-like pattern morphology for 120?kGy confirming the increased amorphousity after irradiation. The thermal study confirmed that the decrease in the melting point of unirradiated film 160.86–155.24°C for 120?kGy doses is attributed to the formation of defects by the chain scissioning process resulting in the degradation of polymer electrolytes at high dose.     

Field electron emission from amorphous carbon thin films grown by RF magnetron sputtering

Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(0 0 1) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate temperatures. Furthermore, a-C:N film exhibits field emission property better than that of undoped a-C film. These results are explained in terms of the change in surface morphology and structural properties of a-C film.     

Annealing and amorphous silicon passivation of porous silicon with blue light emission

The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700-900 °C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900 °C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.