以能带理论诠释直流聚乙烯绝缘中空间电荷的形成和抑制机理

高压直流塑料交联聚乙烯电缆的研发难点是消除其中的空间电荷效应. 目前, 国内外学者普遍通过添加纳米粒子在聚乙烯体内形成深陷阱捕获电荷的机理来抑制电荷积聚, 但此抑制机理违背了电场的基本理论. 以能带理论全面阐述聚合物介质中空间电荷的形成和抑制机理, 从一级陷阱模型出发, 应用电荷入陷和脱陷动力方程, 推导了聚合物介质中空间电荷的形成过程. 在聚合物介质中引入深陷阱后, 介质Fermi能级位移, 电极与介质之间界面接触由Ohm接触转变为阻塞接触. 考虑到无定形相中大量的陷阱密度, 电荷耗尽区宽度小于100 Å, 电极与介质之间的界面对电子变得透明, 形成中性接触, 在电压作用下, 这种聚乙烯介质中不再可能形成空间电荷. 最后, 在纯聚乙烯和纳米改性后含有深陷阱的聚乙烯两种试样上, 分别测量了电导与电场强度的关系和空间电荷分布曲线, 实验结果符合理论推导. 关键词： 直流绝缘 能带理论 空间电荷 抑制机理     

极化电荷与自由电荷之间区别的演示实验

通过将导体放入静电场发生的静电感应现象和将绝缘体（电介质）放入静电场发生的极化现象,演示一组实验,生动地显示了电介质被极化出的正、负电荷,既不能离开电介质,也不能在电介质中自由移动,就是将带有极化电荷的电介质与导体接触,极化电荷也不会与导体上的自由电荷中和,即极化电荷牢固地束缚在介质上．说明极化电荷与自由电荷之间的本质区别,加深学生对这些概念的理解和运用．     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

用于电介质中空间电荷分布测量的Tikhonov反卷积算法

研究了使用压力波法测量平板电介质试样的空间电荷分布的数值解法,使用基于Tikhonov正则化方法的反卷积算法得到了真实的空间电荷分布.在反卷积算法中使用了相关的技术处理,如小波包过滤高频噪音,Tikhonov正则化方法处理积分方程等.利用数值实验研究了噪声对反卷积算法的影响,结果表明,在无噪或者低噪环境下,反卷积算法能够非常好地计算出电介质中的空间电荷分布;在处理有噪数据时,反卷积的结果受到明显的影响,但仍然有较高的计算精度.正则化参数α对空间电荷分布的数值解起着明显的光滑作用,但是对于解的积分值却影响不大.对实际测量数据进行处理的结果表明,反卷积算法成功地计算出了固体电介质中的空间电荷分布和电场分布.     

Electric fields and surface charge in a thin-film ferroelectric-dielectric switchable structure that were determined with a spectral probe

A new method is proposed to study the macroscopic ac fields in the elements of thin-film ferroelectric-dielectric heterostructures during their electric switching. For this purpose, the local field surrounding dielectric molecules is measured. It is important that the dielectric has a characteristic very narrow molecular absorption band, which is used as an electric-field probe. The heterostructure under study consists of a glass substrate, a transparent electrode, a 170-nm-thick layer of polymer ferroelectric, a 40-nm-thick dielectric layer, and a semitransparent electrode. Both functional layers are grown by the Langmuir-Blodgett method. An ac electric field is applied to the electrodes, and the local field having appeared in the dielectric is measured by the electroabsorption method. With allowance for the Lorentz factor, the local field is easily converted into the macroscopic field in the dielectric layer and, then, in the ferroelectric layer. The classical Sawyer-Tower scheme is used as an additional tool to determine the surface charge to be switched at the dielectric-ferroelectric interface.     

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results.     

Electric Charges in Superconducting Mesoscopic Samples

The distribution of the electric charge density in mesoscopic superconducting disks and cylinders is studied within the phenomenological Ginzburg-Landau approach. We found that even in the Meissner state the mesoscopic sample exhibits a non-uniform charge distribution such that a region near the sample edge becomes negatively charged. When vortices are inside the sample there is a superposition of the negative charge located at the vortex core and this Meissner charge, and, as a result, the charge at the sample edge changes sign as a function of the applied magnetic field.     

Electric field involved transport at elevated temperature in nanocrystalline silicon carbide nitride (nc-SiCN) thin films for harsh environment applications

The present study represents a systematic temperature dependent charge transport and dielectric properties of nanocrystalline silicon carbide nitride (nc-SiCN) thin films grown on Pt/Ti/SiO₂/Si substrate. A large negative temperature coefficient of resistance (TCR) ranging from 6200 to 2300 ppmK^-1 in the temperature range 300–773 K, suggests that the nc-SiCN thin films could be useful for futuristic thermal-based sensors. The current density vs. electric field (J-E) characteristics was measured at different temperatures (300–673 K). Detailed J-E analysis revealed an ohmic conduction at the low applied electric field (<65 kV/cm) within the entire temperature range. However, at high electric field (>65 kV/cm), space charge limited conduction (SCLC) mechanism was found to be dominating in low measurement temperature (300–473K), whereas, a transition from SCLC mechanism to Poole-Frenkel mechanism was observed with further increment in the temperature beyond 473 K. The temperature invariant dielectric tunability (n_r ∼10%) and low zero electric field leakage current density (J ∼10⁻⁷A/cm²) at 673 K temperature, demonstrates the feasibility of nc-SiCN thin films for tunable device applications in the high-temperature and harsh environment.     

电介质/半导体结构样品电子束感生电流瞬态特性

电子束照射下电介质/半导体样品的电子束感生电流(electron beam induced current,EBIC)是其电子显微检测的重要手段.结合数值模拟和实验测量,研究了高能电子束辐照下SiO2/Si薄膜的瞬态EBIC特性.基于Rutherford模型和快二次电子模型研究电子的散射过程,基于电流连续性方程计算电荷的输运、俘获和复合过程,获得了电荷分布、EBIC和透射电流瞬态特性以及束能和束流对它们的影响.结果表明,由于电子散射效应,自由电子密度沿入射方向逐渐减小.由于二次电子出射,净电荷密度呈现近表面为正、内部为负的特性,空间电场在表面附近为正而在样品内部为负,导致一些电子输运到基底以及一些出射二次电子返回表面.SiO2与Si界面处俘获电子导致界面附近负电荷密度高于周围区域.随电子束照射样品内部净电荷密度逐渐降低,带电强度减弱.同时,负电荷逐渐向基底输运,EBIC和样品电流逐渐增大,电场强度逐渐减小.由于样品带电强度较弱,表面出射电流和透射电流随照射基本保持恒定.EBIC、透射电流及表面出射电流均随束流呈现近似正比例关系.对于本文SiO2/Si薄膜,透射电流随束能的升高逐渐增大并接近于束流值,EBIC在束能约15 keV时呈现极大值.     

Experiment and simulation of space charge suppression in LDPE/MgO nanocomposite under external DC electric field

In this paper, space charge dynamics under DC electric field of −100 kV/mm in low-density polyethylene (LDPE) and its nanocomposite containing a small amount of MgO nanoparticles were measured using an improved pulsed electro-acoustic (PEA) system. Unlike negative packet-like space charge accumulating in LDPE films, no remarkable space charge was observed in LDPE/MgO nanocomposite films, which indicated that the introduction of MgO nanoparticles played a key role on the space charge suppression. Different with current qualitative models, this paper describes space charge suppression on the basis of simulation using the bipolar charge transport model, which featured bipolar charges injection, transport, trapping, recombination, and extraction process. It was shown from the simulation that trap depth, trap concentration, local electric field and charge injection barrier height were all significant factors on the space charge suppression process. A deeper trap depth in LDPE/MgO nanocomposites made it easier for traps to capture mobile carriers. And a larger trap concentration effectively slowed down the whole carrier movement although there seemed a trap concentration threshold less than 30 Cm⁻³, above which this effect became slight. In addition, both the high permittivity of LDPE/MgO nanocomposites and low local electric field in the vicinity of cathode led to a larger injection barrier height based on the Schottky injection law, which would tremendously block the charge injection. At last, the suppression mechanism of space charge formation in the LDPE/MgO nanocomposites is presented.     

毫米级栅型电场分布FEP薄膜驻极体的制备及其电荷存储性能研究

采用电晕注极和热注极技术, 在厚度为25 μm的氟化乙丙烯共聚物(FEP)表面制备了宽度为2 mm和3 mm的具有栅型电场分布的驻极体, 研究了注极温度和电极宽度对其电荷存储性能的影响. 样品注极后经150天的存储, 栅型电场分布变得清晰而有规律, 覆盖铝电极区电位已衰减至接近零, 未覆盖铝电极区仍保持高电位; 对电极宽度为2 mm和3 mm的样品, 覆盖铝电极区与未覆盖铝电极区的表面电位差分别为110 V和130 V(电场强度差分别为44 kV/cm和52 kV/cm). 表面电位跟踪测试结果表明: 电晕注极样品初始表面电位高于热注极样品; 在相同的注极方法下, 注极温度越高初始表面电位越高, 电极宽度越小初始表面电位越低. 依据电晕注极和热注极原理对实验结果的分析表明, FEP和金属铝在电荷存储性能上的差异是FEP表面蒸镀铝电极后能获得栅型电场分布的原因所在.     

聚乙烯空间电荷包行为的形成机理与仿真方法研究

聚乙烯中的空间电荷包行为是空间电荷的一种特殊的输运行为.研究表明,空间电荷包行为由于受材料本身特性、外加电场大小以及环境温度等的影响,导致其产生过程及传输特性上存在较大差异,这些因素给空间电荷包行为产生机理研究带来了较大困难.通过对电荷的电极注入过程、载流子的体内迁移规律及空间电荷与体内陷阱的相互作用机制进行分析,探讨了不同外加电场及不同深度陷阱能级对电荷包行为造成的相关影响,在此基础上建立物理模型来描述电荷包的产生和迁移过程.模型中提出了在高于阈值电场时,载流子迁移速度与电场关系存在负微分迁移率的假设.基于此模型对空间包行为的模拟结果与实验结果取得较好的一致. 关键词： 空间电荷包 数值模拟 负微分迁移率     

点电荷与介质球系统电势的计算和讨论

计算了点电荷与介质球系统的电势．指出点电荷与导体球、点电荷与无限大导体平面或介质分界平面均匀外电场中有导体球或介质球系统的电势都可由点电荷与介质球系统的电势给出。     

Electrostatic potential in cylindrical dielectric media using the image charge method

We derive a simple analytical expression for the electric potential produced by a point charge in a cylindrical pore with relative permittivity different from that of the surrounding medium. The interface between the pore and the surrounding media may contain electric charge or be electrically neutral. The expression reduces to the known solutions when the surrounding dielectric medium is identical to the pore or an electric conductor. We discuss the convergence of the series expansion and numerically evaluate the electrostatic potential inside the cylindrical pore. The calculated potential shows the effect of the dielectric permittivity difference of the media. The results demonstrate that the expression can be implemented in a numerical dynamic simulation of charged systems in cylindrical geometry. We also give an expression for the case when the source charge is in the medium outside the cylinder.     

A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

A new partial-SOI (PSOI) high voltage device structure called a CI PSOI (charge island PSOI) is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n⁺-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n⁺-regions on the interface by the force with ionized donors in the undepleted n⁺-regions, and therefore effectively enhance the electric field of the dielectric buried layer (E_I) and increase the breakdown voltage (BV), thereby alleviating the self-heating effect (SHE) by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and E_I of the CI PSOI LDMOS increase to 631~V and 584~V/μ m from 246~V and 85.8~V/μ m for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.     

厚度对非极性聚合物薄膜驻极体电荷储存及电荷动态特性的影响

以Du Pont公司的商用Teflon FEP A型薄膜为例，通过热脉冲技术、等温表面电位衰减测量和开路热刺激放电电流谱分析等实验结果，讨论了经常温和高温电晕充电后样品厚度对薄膜驻极体的沉积电荷密度、薄膜驻极体的内电场、体电导率以及电荷储存稳定性的影响.通过热脉冲技术组合电导率温度曲线的测量，研究了在不同温度条件下样品厚度对沉积电荷层的平均电荷重心移动的影响.结果表明：在充电参数一定的条件下，随着膜厚的降低，储存电荷密度上升，但电荷稳定性有所下降.因此，合理地调控薄膜厚度，可以有效地优化驻极体的电荷储存能 关键词： 厚度 驻极体 电荷储存能力 电荷稳定性     

Backward Charge Transfer in Conjugated Polymers

It has been known that the static polarizability of a polymer chain with a biexciton is negative. In order to understand this peculiar fact, this paper studies the dynamical process of the charge transfer in the polymer chain induced by an external electric field E during forming the biexciton. The time dependence of the charge distribution in the chain reveals that the charge transfer is backward: the positive charge shifts in the opposite direction of the external electric field. Such a backward charge transfer (BCT) produces an opposite dipole, which makes the polarization negative. The effect of electron interaction on the BCT is illustrated.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.