Quantum transport and two-parameter scaling at the surface of a weak topological insulator

Weak topological insulators have an even number of Dirac cones in their surface spectrum and are thought to be unstable to disorder, which leads to an insulating surface. Here we argue that the presence of disorder alone will not localize the surface states; rather, the presence of a time-reversal symmetric mass term is required for localization. Through numerical simulations, we show that in the absence of the mass term the surface always flow to a stable metallic phase and the conductivity obeys a one-parameter scaling relation, just as in the case of a strong topological insulator surface. With the inclusion of the mass, the transport properties of the surface of a weak topological insulator follow a two-parameter scaling form.     

Efficient compact model for calculating the surface potential of carbon-nanotube field-effect transistors using a curve-fitting method

This paper presents an analytical method to compute the surface potential of ballistic metal-oxide semiconductor field-effect transistor (MOSFET)-like carbon-nanotube field-effect transistors (CNFETs). The proposed compact model considers the surface potential as functions of the carbon-nanotube diameter, gate insulator thickness, gate voltage and drain voltage. One of the advantages of this model is that there is no need to refer to the numerical model to recalculate the surface potential each time nanotube diameter or insulator thickness is changed. Instead of using a constant smoothing parameter regardless of the device size and applied bias voltages, a parameter calculated for the specific situations is employed to provide the simulation results with higher accuracy. The validity of the proposed model was verified by comparing the simulated output characteristics of three CNFETs with those of the numerical model and the previous compact model.     

最大平均相关高度滤波算法在畸变目标识别中的应用

为了解决在联合变换相关器上无法识别复杂背景下畸变目标(目标的平面内旋转或尺寸改变)的问题,对其应用最大平均相关高度滤波算法进行畸变目标识别.首先在频域内优化最大平均相关高度滤波器的三个性能控制参量|然后将优化好的最大平均相关高度频域滤波器映射到物空间,得到最大平均相关高度参考模板.作为实例,本文对复杂背景下的军舰和汽车目标进行了光学识别实验,结果表明,当滤波器的控制参量为γ=1,α=0,β=0.1时,得到的MACH参考模板最为清晰,目标产生的相关峰最为尖锐明亮.通过这种方法,在联合变换相关器上能够得到的比例畸变容差为28%,旋转畸变容差为20°,对于超出上述畸变容差范围的目标,相关峰强度逐步减弱,但部分仍然可以识别.改进后的MACH滤波器在畸变目标的探测领域具有很强的优势和良好的应用前景.     

Computer simulations of insulator charge neutralisations with a corona ioniser – Influence of initial surface charge distribution

This is a report of a numerical investigation of the phenomena of charge neutralisations of an insulating plate with different initial surface charge distributions with the use of a continuously balanced DC ioniser. The early phase phenomena of the insulator charge neutralisation are complicated and depend significantly on the relationship between the initial surface charge distribution and ioniser placement. In addition, the results of simulations demonstrate that ionisers themselves can cause over-neutralisation during the early phase of neutralisation; however, when ions can move towards the opposite side of the plate, the ioniser can eliminate the over-neutralised charges. We propose having the ioniser face the charged side of an insulator to avoid such problems.     

A review of Monte Carlo simulations for the Bose–Hubbard model with diagonal disorder

We review the physics of the Bose–Hubbard model with disorder in the chemical potential focusing on recently published analytical arguments in combination with quantum Monte Carlo simulations. Apart from the superfluid and Mott insulator phases that can occur in this system without disorder, disorder allows for an additional phase, called the Bose glass phase. The topology of the phase diagram is subject to strong theorems proving that the Bose Glass phase must intervene between the superfluid and the Mott insulator and implying a Griffiths transition between the Mott insulator and the Bose glass. The full phase diagrams in 3d and 2d are discussed, and we zoom in on the insensitivity of the transition line between the superfluid and the Bose glass in the close vicinity of the tip of the Mott insulator lobe. We briefly comment on the established and remaining questions in the 1d case, and give a short overview of numerical work on related models.     

Computational comparison of charge neutralisations of conductors and insulators with corona ionisers

We report a numerical investigation of phenomena of charge neutralisations of insulators and conductors with a balanced DC or AC ioniser using 2-D cylindrical electrohydrodynamic modelling. The early-phase phenomena of the insulator charge neutralisation are complicated and significantly different from the conductor ones, which indicates that the evaluation by the standard test may lead to potential problems in practical applications. In addition, the results of simulations demonstrated that, in the insulator charge neutralisation, ionisers themselves can cause latent hazards during neutralisation. We propose proper use of ionisers and the standard test to avoid such hazards.     

Scattering of a Narrow Wave Beam on a Rough,Locally-Specular Surface in the Case of Pulsed Illumination

We consider scattering of a pulsed narrow wave beam on a rough surface with a locally-specular indicatrix. Analytical expressions for the average received power are obtained for normal distributions of heights and slopes of the rough surface in two cases in which the direction to the receiver is close to or strongly different from the direction of specular reflection. It is shown that in these cases, the received echo pulses have drastically different profiles determined by the source and receiver parameters, the scheme of sounding, and the variance of the heights and slopes of the rough surface. The obtained analytical expressions for the average received power agree well with the results of numerical simulations.     

Simulations of a Plasma Flow Switch

In a portion of the experimental program using the SHIVA Star capacitor bank at the Air Force Weapons Laboratory (AFWL), a cylindrical foil load is imploded using an inductive store and a plasma flow switch. We have performed a number of two-dimensional simulations of the switch and load using the MHD code MACH2. In addition to explaining the data from the first series of experiments, the simulations led to design modifications of the basic plasma flow switch that resulted in improved current delivery and in enhanced radiation yield. The experimental results are reported in a companion paper by Degnan et al. The key modification was closing portions of the vane structure. The switch must be sealed shut or else substantial current will flow in the diffuse gas that is ablated from the walls of the switch barrel.     

最大平均相关高度滤波算法在畸变目标识别中的应用

为了解决在联合变换相关器上无法识别复杂背景下畸变目标(目标的平面内旋转或尺寸改变)的问题,对其应用最大平均相关高度滤波算法进行畸变目标识别.首先在频域内优化最大平均相关高度滤波器的三个性能控制参量;然后将优化好的最大平均相关高度频域滤波器映射到物空问,得到最大平均相关高度参考模板,作为实例,本文对复杂背景下的军舰和汽车...     

The effect of the target structure and composition on the ejection and transport of polymer molecules and carbon nanotubes in matrix-assisted pulsed laser evaporation

Matrix-assisted pulsed laser evaporation (MAPLE) is a prominent member of a broad and expanding class of laser-driven deposition techniques where a matrix of volatile molecules absorbs laser irradiation and provides the driving force for the ejection and transport of the material to be deposited. The mechanisms of MAPLE are investigated in coarse-grained molecular dynamic simulations focused on establishing the physical regimes and limits of the molecular transfer from targets with different structures and compositions. The systems considered in the simulations include dilute solutions of polymer molecules and individual carbon nanotubes (CNTs), as well as continuous networks of carbon nanotubes impregnated with solvent. The polymer molecules and nanotubes are found to be ejected only in the ablation regime and are incorporated into matrix-polymer droplets generated in the process of the explosive disintegration of the overheated matrix. The ejection and deposition of droplets explain the experimental observations of complex surface morphologies in films deposited by MAPLE. In simulations performed for MAPLE targets loaded with CNTs, the ejection of individual nanotubes, CNT bundles, and tangles with sizes comparable or even exceeding the laser penetration depth is observed. The ejected CNTs align along the flow direction in the matrix plume and tend to agglomerate into bundles at the initial stage of the ablation plume expansion. In a large-scale simulation performed for a target containing a network of interconnected CNT bundles, a large tangle of CNT bundles with the total mass of 50 MDa is separated from the continuous network and entrained with the matrix plume. No significant splitting and thinning of CNT bundles in the ejection process is observed in the simulations, suggesting that fragile structural elements or molecular agglomerates with complex secondary structures may be transferred and deposited to the substrate with the MAPLE technique.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-kappa gate dielectric

By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-kappa gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-kappa dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Superconducting proximity effect and majorana fermions at the surface of a topological insulator

We study the proximity effect between an s-wave superconductor and the surface states of a strong topological insulator. The resulting two-dimensional state resembles a spinless px+ipy superconductor, but does not break time reversal symmetry. This state supports Majorana bound states at vortices. We show that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.     

等离子体浸没离子注入非导电聚合物的适应性及栅网诱导效应的研究

本文建立了绝缘材料等离子体浸没离子注入过程的动力学Particle-in-cell(PIC)模型, 将二次电子发射系数直接与离子注入即时能量建立关联, 研究了非导电聚合物厚度、介电常数和二次电子发射系数对表面偏压电位的影响规律以及栅网诱导效应. 研究结果表明: 非导电聚合物较厚时, 表面自偏压难以实现全方位离子注入, 栅网诱导可以间接为非导电聚合物提供偏压, 并抑制二次电子发射, 为厚大非导电聚合物表面等离子体浸没离子注入提供了有效途径.     

Dynamics of the plume formation and parameters of the ejected clusters in short-pulse laser ablation

The dynamics of the early stages of the ablation plume formation and the mechanisms of cluster ejection are investigated in large-scale molecular dynamics simulations. The cluster composition of the ablation plume has a strong dependence on the irradiation conditions and is defined by the interplay of a number of processes during the ablation plume evolution. At sufficiently high laser fluences, the phase explosion of the overheated material leads to the formation of a foamy transient structure of interconnected liquid regions that subsequently decomposes into a mixture of liquid droplets, gas-phase molecules, and small clusters. The ejection of the largest droplets is attributed to the hydrodynamic motion in the vicinity of the melted surface, especially active in the regime of stress confinement. Spatially resolved analysis of the dynamics of the plume formation reveals the effect of segregation of the clusters of different sizes in the expanding plume. A relatively low density of small/medium clusters is observed in the region adjacent to the surface, where large clusters are being formed. Medium-size clusters dominate in the middle of the plume and only small clusters and monomers are observed near the front of the expanding plume. Despite being ejected from deeper under the surface, the larger clusters in the plume have substantially higher internal temperatures as compared to the smaller clusters. The cluster-size distributions can be relatively well described by a power law Y(N)∼N^-τ with exponents different for small, up to ∼15 molecules, and large clusters. The decay is much slower in the high-mass region of the distribution. Received: 13 October 2001 / Accepted: 18 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-434/982-5660, E-mail: lz2n@virginia.edu     

Theory of the effect of a DC magnetic field on surface space-charge-wave/optical phonon instabilities in semiconductor media

A theoretical investigation has been carried out on the effect of a DC magnetic field on surface space-charge-wave instabilities caused by a drift current parallel to the surface of a doped polar semiconductor. The magnetic field is taken as perpendicular to the semiconductor surface. The dispersion relation is obtained using a generalization of the Kliewer-Fuchs specular-reflection boundary conditions. Calculated results are obtained in the non-retarded limit for two cases: (1) where a current-carrying, nonpolar semiconductor interfaces a polar insulator half-space and (2) where a current-carrying, polar semiconductor interfaces a nonpolar insulator half-space. Convective or amplifying instabilities arise because of the presence of optical phonons. Numerical results are presented for the gain as a function of frequency and magnetic field.     

Novel effects of localization due to intrinsic disorder in manganites

We discuss the effects of a novel ‘intrinsic’ disorder in hole-doped rare-earth manganites. Using effective field theory as well as direct numerical simulations, we show that this disorder can have dramatic effects in terms of the transition from ferromagnetic insulator to ferromagnetic metal upon hole-doping, including an Anderson localized regime where variable range hopping may be observed.     

直流高压加速管轴向绝缘的优化设计

 为了降低500 mA直流高压加速管高梯度区的电位梯度，对加速管轴向绝缘结构进行优化设计。首先分析了沿面闪络的机理和该加速管轴向绝缘体结构。根据SEEA理论并通过数值模拟，发现阴极、真空和绝缘体三结合点处电场畸变是产生高场强的原因，并分别对4种绝缘体结构进行模拟分析，最终确定出比较理想的结构：绝缘体沿面与阴极电极夹角为+45°，绝缘体两端开槽并均匀嵌入金属电极环，绝缘体均匀嵌入阳极电极片内。     

Mapping the current–current correlation function near a quantum critical point

The current–current correlation function is a useful concept in the theory of electron transport in homogeneous solids. The finite-temperature conductivity tensor as well as Anderson’s localization length can be computed entirely from this correlation function. Based on the critical behavior of these two physical quantities near the plateau–insulator or plateau–plateau transitions in the integer quantum Hall effect, we derive an asymptotic formula for the current–current correlation function, which enables us to make several theoretical predictions about its generic behavior. For the disordered Hofstadter model, we employ numerical simulations to map the current–current correlation function, obtain its asymptotic form near a critical point and confirm the theoretical predictions.