Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性     

氧、硫掺杂六方氮化硼单层的第一性原理计算

采用基于密度泛函理论和投影缀加平面波的第一性原理计算方法, 研究了六方氮化硼单层(h-BN)中的氮原子缺陷(V_N)、氧原子取代氮原子(O_N)和硫原子取代氮原子(S_N)时的几何结构、磁性性质和电子结构.研究发现, V_N和O_N体系形变较小, 而S_N体系形变较大; h-BN本身无磁矩, 但具有N缺陷或者掺杂后总磁矩都是1 μ_B; 同时给出了态密度和能带结构.利用掺杂体系的局域对称性和分子轨道理论解释了相关结果, 尤其是杂质能级和磁矩的产生. 关键词： 六方BN单层 第一性原理计算 密度泛函理论 分子轨道理论     

过渡金属 X（ X=Cr、Mn、Fe、Tc、Re ）掺杂Janus Ga2SSe 的第一性原理研究

利用密度泛函理论的第一性原理赝势平面波方法,研究过渡金属X(X=Cr、Mn、Fe、Tc、Re)原子掺杂Janus Ga₂SSe的磁性、电子性质及光学性质.研究表明：过渡金属掺杂Janus Ga₂SSe体系在Chalcogen-rich条件下有着比Ga-rich条件下更好的稳定性.其中Mn掺杂体系形成能在两种条件下皆为最低.本征Ga₂SSe是具有2.02 eV带隙的间接带隙半导体,在紫外区域有着很好的光伏吸收能力.与本征Ga₂SSe相比,Cr掺杂体系自旋向上通道出现杂质能级,自旋向上与向下通道不对称,呈磁矩为2.797μ_B铁磁性半金属. Mn掺杂体系在其自旋向上通道产生的杂质能级,呈磁矩为3.645μ_B的磁性P型半导体. Fe掺杂体系自旋向下通道产生的杂质能级,呈磁矩为3.748μ_B磁性P型半导体.在Tc与Re掺杂后,带隙皆由间接变直接带隙,呈无磁性的P型半导体.从光学性质来看,各掺杂体系与未掺杂Ga₂SSe在介电...     

Ga空位对GaN:Gd体系磁性影响的第一性原理研究

采用基于密度泛函理论的第一性原理结合投影缀加平面波的方法,研究了GaN中Ga被稀土元素Gd替代以及与邻近N或Ga空位组成的缺陷复合体的晶格常数、磁矩、形成能以及电子结构等性质.结果发现,Gd掺杂GaN后禁带宽度变窄,由直接带隙半导体转为间接带隙半导体;单个Gd原子掺杂给体系引入大约7μB的磁矩;在Gd与Ga或N空位形成的缺陷复合体系中,N空位对引入磁矩贡献很小,大约0.1μB,Ga空位能引入约2μB的磁矩.随着Ga空位的增多,体系总磁矩增加,但增加量与Ga空位的位置分布密切相关.当Ga空位分布较为稀疏时,Gd单原子磁矩受影响较小,但当Ga空位距离较近且倾向于形成团簇时,Gd单原子磁矩明显增加,而且这种情况下空位形成能也最小.     

密度泛函理论计算GenFe(n=1—8)团簇的基态结构及其磁性

基于第一性原理，利用密度泛函理论中的广义梯度近似 (GGA)对Ge_nFe(n=1—8)团簇进行了结构优化、能量及频率的计算，得到了 Ge_nFe(n=1—8)团簇在不同自旋多重度下的平衡构型及其基态结构.结果表明：Ge_nFe混合团簇的平均结合能明显比相应纯锗团簇的平均结合能有所增大，即掺杂Fe原子可以提高锗团簇的稳定性；纯锗团簇的基态除了Ge₂为自旋三重态外其他均为单重态，而混合团簇Ge_nFe(n=1—8)的基态均为自旋三重态；对Ge_nFe(n=1—8)团簇的磁性做了较系统的研究，发现团簇总磁矩随团簇尺寸增大基本稳定在2μ_B (只有Ge₈Fe的总磁矩2.391μ_B较明显地偏离了2μ_B)，另外团簇中Fe原子的磁矩在2.5μ_B左右振荡. 关键词： nFe团簇')" href="#">Ge_nFe团簇 密度泛函理论(DFT) 自旋多重度 磁矩     

Fe原子薄片的磁性:第一性原理计算

使用基于密度泛函理论的第一原理方法,对Fe单层原子薄片在二维正方、二维六角晶格下的电子结构和磁学性质进行了系统研究.结果表明,二维正方、二维六角以及bcc晶格在平衡晶格常数下都具有磁性,其单位原子磁矩分别为2.65,2.54和2.20μ_В.对二维晶格在被压缩和被拉伸时的磁性计算表明,随着晶格的被拉伸,当最近邻原子间距大于4.40时,铁原子间的键合被拉断,体系单位原子的磁矩趋于孤立Fe原子的磁矩4μ_В;随着原子键长的减小,各体系的磁矩 关键词： Fe 原子薄片 磁性 从头计算     

反向衬底偏压下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生电流特性研究

研究了反向衬底偏压V_B下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生(GMG)电流I_GMG特性, 发现I_GMG曲线的上升沿与下降沿随着|V_B|的增大向右漂移. 基于实验和理论模型分析, 得出了V_B与这种漂移之间的物理作用机制, 漂移现象的产生归因于衬底偏压V_B 调节了表面电势φ_s在栅电压V_G 中的占有比重: |V_B|增大时相同V_G下φ_s会变小, φ_s 的变化继而引发上升沿产生率因子g_r减小以及下降沿产生率因子g_f增大. 进一步发现I_GMG 上升沿与下降沿的最大跨导G_MR, G_MF 在对数坐标系下与V_B成线性关系, 并且随着|V_B|增加而增大. 由于漏电压V_D在I_GMG 上升沿与下降沿中的作用不同, 三种V_D下G_MR-V_B曲线重合而G_MF-V_B曲线则产生差异. 增大V_D 会增强g_f 随V_G的变化, 因此使得给定V_B 下的G_MF变大. 同时这却导致了更大V_D下G_MF-V_B 曲线变化的趋势减缓, 随着V_D从0.2 V变为0.6 V, 曲线的斜率s从0.09减小到0.03. 关键词： 产生电流 表面势 衬底偏压 N沟道金属氧化物半导体场效应晶体管     

MC20F20（M=Li，Na，Be和Mg）几何结构和电子性质的密度泛函计算研究

采用密度泛函理论（density functional theory, DFT）中的广义梯度近似（generalized gradient approximation, GGA）对MC₂₀F₂₀（M=Li,Na,Be和Mg）的几何结构和电子性质进行了计算研究.几何结构研发现：随着内掺原子序数的增加,金属原子M对C₂₀F₂₀中的C—C键的影响越来越大,而对C—F键的影响甚微.掺杂能计算表明：MC₂₀F₂₀的掺杂能均为负值,需要在一定的实验条件下才能被合成.内掺碱金属和碱土金属分别产生了两类截然不同的能隙和磁性.其中,内掺碱金属的能隙非常小,且带有1μ_B的净磁矩,表现出磁性;而内掺碱土金属的能隙比C₆₀的能隙还大,净自旋为0,表现出非磁性. 关键词： 富勒烯 几何结构 电子结构 密度泛函     

尖晶石铁氧体TixNi1-xFe2O4中阳离子分布和Ti离子磁矩的实验研究

采用固相反应法制备了系列样品Ti_xNi_1-xFe₂O₄ (x=0.0, 0.1, 0.2, 0.3, 0.4). 室温下的X射线衍射谱表明样品全部为(A)[B]₂O₄型单相立方尖晶石结构, 属于空间群Fd3m. 样品的晶格常数随Ti掺杂量的增加而增大. 样品在10 K温度下的比饱和磁化强度σ_S随着Ti掺杂量x的增加逐渐减小. 研究发现, 当Ti掺杂量x≥ 0.2时, 磁化强度σ随温度T的变化曲线出现两个转变温度T_L和T_N. 当温度低于T_N时, 磁化强度明显减小; 当温度达到T_N时, dσ/dT具有最大值. σ-T曲线的这些特征表明, 由于Ti掺杂在样品中出现了附加的反铁磁结构. 这说明样品中的Ti离子不是无磁性的+4价离子, 而是以+2和+3价态存在, 其离子磁矩的方向与Fe和Ni离子的磁矩方向相反. 利用本课题组提出的量子力学方势垒模型拟合样品在10 K温度下的磁矩, 得到了Ti, Fe和Ni三种阳离子在(A)位和[B]位的分布情况, 并发现在所有掺杂样品中, 80%的Ti离子以+2价态占据尖晶石结构的[B]位.     

第一原理研究Mn掺杂LiNbO3晶体的磁性和光吸收性质

采用基于密度泛函理论和局域密度近似的第一性原理分析了Mn掺杂LiNbO₃晶体的结构, 磁性, 电子特性和光吸收特性. 文中计算了Mn占据Li位和Nb位体系的形成焓, 对应的形成焓分别为-8.340 eV/atom和-8.0062 eV/atom, 也就意味着Mn 原子优先占据Li位. 这也就意味着Mn原子占据Li位的掺杂LiNbO₃晶体结构更稳定. 磁性分析的结果显示, 其对应磁矩也比占据Nb位的高. 进一步分析磁性的来源, 自旋态密度结果显示: Mn掺杂LiNbO₃晶体的磁性主要源于掺杂原子Mn, Mn原子携带的磁矩高达 4.3 μ_B, 显示出高自旋结构. 由于Mn-3d与近邻O-2p及次近邻Nb-4d 轨道的杂化作用, 计算表明: 诱导近邻O原子及次近邻Nb原子产生的磁矩对总磁矩的贡献较小. 通过光学吸收谱的分析, 得出在可见光区Li位被Mn原子替代以后显示出更好的光吸收响应相比于Nb位. 本文还分析了O空位对于LiNbO₃晶体磁性与电子性质的影响, 结果显示O空位的存在可以增加Mn掺杂LiNbO₃体系的磁性.     

Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study

The electronic structure, magnetic properties, and mechanism of magnetization in two-dimensional(2D) aluminum nitride(AlN) monolayer doped with nonmagnetic elements of group 1A(Li, Na, K) or group 2A(Be, Mg, Ca) were systematically investigated using first-principles studies. Numerical results reveal that the total magnetic moments produced by group 1A and group 2A nonmagnetic doping are 2.0μB and 1.0μB per supercell, respectively. The local magnetic moments of the three N atoms around the doping atom are the primary moment contributors for all these doped AlN monolayers. The p orbital of the dopant atom contributes little to the total magnetic moment, but it influences adjacent atoms significantly, changing their density of states distribution, which results in hybridization among the p orbitals of the three closest N atoms, giving rise to magnetism. Moreover, the doped AlN monolayer, having half-metal characteristics,is a likely candidate for spintronic applications. When two group 1A or group 2A atoms are inserted, their moments are long-range ferromagnetically coupled. Remarkably, the energy of formation shows that, if the monolayer has been grown under N-rich conditions, substitution of a group 2A atom at an Al site is easier than substitution of a group 1A atom.     

Pressure induced magnetic and semiconductor–metal phase transitions in Cr_2MoO_6

We investigate magnetic ordering and electronic structures of Cr_2MoO_6under hydrostatic pressure. To overcome the band gap problem, the modified Becke and Johnson exchange potential is used to investigate the electronic structures of Cr_2MoO_6. The insulating nature at the experimental crystal structure is produced, with a band gap of 1.04 eV, and the magnetic moment of the Cr atom is 2.50 μB, compared to an experimental value of about 2.47 μB. The calculated results show that an antiferromagnetic inter-bilayer coupling–ferromagnetic intra-bilayer coupling to a ferromagnetic inter-bilayer coupling–antiferromagnetic intra-bilayer coupling phase transition is produced with the pressure increasing. The magnetic phase transition is simultaneously accompanied by a semiconductor–metal phase transition. The magnetic phase transition can be explained by the Mo–O hybridization strength, and ferromagnetic coupling between two Cr atoms can be understood by empty Mo-d bands perturbing the nearest O-p orbital.     

K2NiF4型Sr2CrO4的磁电性质研究

以SrO和CrO₂为原料, 在高温高压的条件下直接反应生成纯相的K₂NiF₄结构的Sr₂CrO₄多晶样品. 结构用粉末X射线衍射及GSAS精修表征. 磁化率测试显示样品存在一个弱的反铁磁相变, 奈尔温度为T_N=95 K. 在奈尔温度以上, 磁化率随温度的变化遵循居里-外斯定律. 对样品进行了电阻测试, 结果显示了样品的绝缘特性.     

Magnetism in boron nitride monolayer: Adatom and vacancy defect

Using the full potential linearized augmented plane wave (FLAPW) method, we have investigated the adatom or vacancy defect induced magnetic properties of hexagonal boron nitride (h-BN) monolayer. It has been observed that the N vacancy defect has no influence on the magnetic property of h-BN, whereas the B vacancy defect caused spin polarization in the nearest three N atoms. The total magnetic moment is about 0.87 μ_B within muffin-tin radius (0.29 μ_B per N atom) and the spin polarized N atoms show metallic feature. In the presence of B adatom defect, we have obtained rather weak spin polarization about 0.1 μ_B. However, the sizable magnetic moment of 0.38 μ_B appears in N adatom defect. Both B and N adatom defect systems preserve very close to semiconducting feature with a finite band gap. We have found that the DOS and the XMCD spectral shapes are strongly dependent on the defect type existing in the h-BN monolayer and this finding may help reveal the origin of magnetism in the h-BN layer if one performs surface sensitive experiment such as spin polarized scanning tunneling microscopy or XMCD measurement in the near future.     

Vacancies in fully hydrogenated boron nitride layer: implications for functional nanodevices

Using density functional theory, a series of calculations of structural and electronic properties of hydrogen vacancies in a fully hydrogenated boron nitride (fH‐BN) layer were conducted. By dehydrogenating the fH‐BN structure, B‐terminated vacancies can be created which induce complete spin polarization around the Fermi level, irrespective of the vacancy size. On the contrary, the fH‐BN structure with N‐terminated vacancies can be a small‐gap semiconductor, a typical spin gapless semiconductor, or a metal depending on the vacancy size. Utilizing such vacancy‐induced band gap and magnetism changes, possible applications in spintronics are proposed, and a special fH‐BN based quantum dot device is designed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ab initio studies of isolated hydrogen vacancies in graphane

We present a density functional study of various hydrogen vacancies located on a single hexagonal ring of graphane (fully hydrogenated graphene) considering the effects of charge states and the position of the Fermi level. We find that uncharged vacancies that lead to a carbon sublattice balance are energetically favorable and are wide band gap systems just like pristine graphane. Vacancies that do create a sublattice imbalance introduce spin polarized states into the band gap, and exhibit a half-metallic behavior with a magnetic moment of 1.00 μ_B per vacancy. The results show the possibility of using vacancies in graphane for novel spin-based applications. When charging such vacancy configurations, the deep donor (+1/0) and deep acceptor (0/−1) transition levels within the band gap are noted. We also note a half-metallic to metallic transition and a significant reduction of the induced magnetic moment due to both negative and positive charge doping.     

First principles study on the electronic structure and effect of vanadium doping of BN nanowires

The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.     

Strain-induced magnetism in ReS_2 monolayer with defects

We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS_2 monolayer with monosulfur vacancy(V_s) and disulfur vacancy(V_(2S))both are nonmagnetic.However,as strain increases to 8%,V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V_(2S)-doped ReS_2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS_2 monolayer with V_S and V_(2S) can be a possible candidate for new spintronic applications.