纳米NiAl-Ni和Ni3Al-Ni合金的低温电阻特性

为了深入理解纳米Al-Ni合金低温下的电子输运过程，使用自主研发的电磁感应加热-自悬浮定向流法制备出Al，Ni和Al-Ni纳米合金粉末，并采用真空热压设备将纳米粉末压制成纳米晶块体，利用自主搭建的低温热电测量系统研究了Al-Ni纳米合金的电阻率随温度(8~300 K)的变化规律。研究结果表明:Al-Ni纳米合金由于形成有序晶相而仍然与Al，Ni纳米晶一样，电阻率随温度的降低而降低。纳米Ni₃Al-Ni和NiAl-Ni在居里温度点附近出现了电阻率随温度变化的极大值点，因为单质Ni的影响，Ni₃Al-Ni的居里温度比粗晶Ni₃Al提高了20 K。由于磁子-电子散射作用和声子-电子散射作用，纳米Ni₃Al-Ni，NiAl-Ni和Ni的电阻率在低温下(8~40 K)与温度呈T2和T4关系。     

Temperature dependence of the electrical resistivity of amorphous Co80−xErxB20 alloys

The temperature dependence of the electrical resistivity of amorphous Co_80−xEr_xB₂₀ alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T_min. In addition, the resistivity shows quadratic temperature behavior in the interval T_min<T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity shows a change in structural short range occurring in the composition range 8–9 at%.     

Sr掺杂对CaMnO_3基氧化物电子性质及热电输运性能的影响

采用密度泛函理论计算分析的方法研究了Ca位Sr掺杂的CaMnO_3基氧化物的电子性质和电性能;采用柠檬酸溶胶-凝胶法结合陶瓷烧结制备工艺制备了Ca位Sr掺杂的CaMnO_3基氧化物块体试样,分析研究了所得试样的热电传输性能.结果表明,Sr掺杂CaMnO_3氧化物仍然呈间接带隙型能带结构,带隙宽度由0.756 eV减小到0.711 eV.Sr掺杂CaMnO_3氧化物费米能级附近的载流子有效质量均得到调控,载流子浓度也有所增大.Sr比Ca具有更强的释放电子能力,其掺杂在CaMnO_3氧化物中表现为n型.Sr掺杂的CaMnO_3基氧化物材料电阻率大幅度降低,Seebeck系数绝对值较本征CaMnO_3基氧化物材料有一定程度的增大,Sr掺杂量为0.06和0.12的Ca_(1-x)Sr_xMnO_3(x=0.06,0.12)试样,其373 K的电阻率分别降低至本征CaMnO_3基氧化物材料的25%和21%,其373 K的Seebeck系数绝对值分别是本征CaMnO_3基氧化物材料的112.9%和111.1%,Sr掺杂有效提高了CaMnO_3基氧化物材料的热电性能.     

Temperature dependence of thermal and electrical conductivity of Bi-based high-Tc (2 2 2 3) superconductor

Superconducting samples with nominal composition Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_δ were prepared by the conventional solid-state reaction technique. The samples have been characterized by X-ray diffraction, dc electrical resistivity, ac magnetic susceptibility and thermal conductivity. The X-ray diffraction studies were done at room temperature and the lattice constants of the material were determined by indexing all the peaks. All the above measurements show that, there exists two phases i.e. high-T_c (2 2 2 3) and low-T_c (2 2 1 2). The information obtained from dc electrical resistivity data agrees with ac magnetic susceptibility measurements. The onset temperature T_c (onset) and zero resistivity temperature T_c (R = 0) of the samples remains within the temperature 120 ± 1 K and 103 ± 1 K. Thermal conductivity has been measured with a transient plane source (TPS) technique in the temperature range 77–300 K. The estimation of the electrical resistivity change due to scattering by phonons and impurities has been discussed. An increase in thermal conductivity is observed above and below T_c (R = 0). The electron–phonon scattering time, phonon-limited mobility and the size of the electron–phonon constant are also calculated. Wiedemann–Franz law is applied to gain prediction about the magnitude of electronic and phonon contribution to the total thermal conductivity of the samples. It is observed that heat is mainly conducted by the phonons in this system.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Kinetic interface roughening and magneto resistance of sputter-deposited Fe/Ni75B25 multilayers

The roughening of interfaces as a function of layer thickness and magneto transport properties have been investigated on sputter-deposited Fe/Ni₇₅B₂₅ multilayer films. X-ray reflectivity data were recorded for Ni₇₅B₂₅(72 nm) film and for [Fe(2 nm)/Ni₇₅B₂₅(2 nm)]₁₆ and [Fe(4 nm)/Ni₇₅B₂₅(4 nm)]₈ multilayer films. A power law dependence of the interfacial width of growing Fe/Ni₇₅B₂₅ interfaces was observed. The resulting growth exponents β were found to be in the range of 0.55–0.58 in the initial growth stage of the multilayer with lower Fe/Ni₇₅B₂₅ repetition thickness and at approximately 0.34 for multilayer with higher repetition thickness. The growth exponents were compared with theoretical calculations. High resolution electron microscopy revealed the columnar growth of the Fe/Ni₇₅B₂₅ multilayer. Additionally, an increase of magnetoresistance was observed by the multilayering of Ni₇₅B₂₅ films with Fe interlayers.     

Structural, magnetic and transport properties of NiFeχAg(1−χ) heterogeneous alloys

We carried out a comprehensive study of structural, magnetic and electrotransport properties of as-deposited and annealed (Ni₈₀Fe₂₀)_χAg(_1−χ) heterogenous alloys prepared by sputtering. The NiFe atomic concentration was varied between 15% and 40%. These alloys consist of small magnetic particles (Ni₈₀Fe₂₀) embedded in a nonmagnetic matrix (Ag). The structures of these alloys were investigated by X-ray diffraction, scanning electron microscopy and high-resolution cross-section transmission electron microscopy. The magnetic measurements were made using SQUID magnetometry and ferromagnetic resonance. Magnetoresistance was measured with a conventional four-point probe between 1.5 K and room temperature in field range 0–6T. Three contributions to the magnetoresistance of these granular alloys have been clearly identified: the spin-valve (or giant) magnetoresistance as in multilayers, scattering on magnetic fluctuations (as in any ferromagnetic metal around its magnetic ordering temperature), and anisotropic magnetoresistance. These three contributions have their own dependences on the size of the magnetic particles, on the degree of intermixing between Ni₈₀Fe₂₀ and Ag, and on temperature. We discuss the different shapes and amplitudes of magnetoresistance versus Ni₈₀Fe₂₀ concentration or temperature and their evolution upon annealing in terms of the relative roles of these three contributions. The magnetoresistance in multilayers (current in-plane or perpendicular to the plane) and granular alloys are also compared.     

Crystallization kinetics of the Fe40Ni38Mo4B18 amorphous alloy

X-ray diffraction (XRD) and Mössbauer spectroscopy were used to study the annealing of the Fe₄₀Ni₃₈Mo₄B₁₈ amorphous alloy. The samples were isothermally annealed in the 858–878 K temperature range several times. Two crystalline phases were observed in the annealed samples: FeNi₃ and (Fe, Ni, Mo)₂₃B₆. Preliminary results indicate that assuming a linear relationship between the area under the main XRD peak associated with the FeNi₃ phase and its volume fraction, this can be fitted to a Johnson–Mehl–Avrami equation with an exponent n close to 1.0. Mössbauer results show a broad magnetic hyperfine field distribution in as-received samples and, consistent with XRD results, a sextet attributed to precipitates of FeNi₃ (B_hf=29.5 T) for long annealing times.     

电阻率与强度性能的关联及铜合金性能分区

铜合金以低电阻率为特征,由于电阻率与强度存在着共同的微观结构机理,两者往往协同变化,而导致难以对合金进行性能的全面评估和选材.本文以Cu-Ni-Mo合金作为研究对象,以团簇结构[Mo_1-Ni_(12)]构建固溶体的近程序结构模型,解析了电阻率和强度依赖于成分的定量变化规律,并定义了拉伸强度/电阻率的值为代表合金本质特性的"强阻比",得到了完全固溶态Cu-Ni-Mo合金的强阻比为7×10~8MPa/?·m,完全析出态的强阻比为(310—490)×10~8MPa/?·m.进而应用强阻比对常用铜合金进行了性能分区,给出铜合金材料选材的依据,得出了基于Cu-(Cr, Zr, Mg, Ag, Cd)等二元基础体系的铜合金适用于高强高导应用,而基于Cu-(Be, Ni, Sn, Fe, Zn, Ti, Al)等为基础二元体系的铜合金不能实现高强高导.该强阻比为310的特征性能分界线的发现为合金性能的全面评估提供了量化依据,可指导高强高导铜合金的选材和研发.     

Dynamic contribution to the fishtail effect in a twin-free DyBa2Cu3O7−δ single crystal

Superconducting current densities j_s and dynamic relaxation rates Q d ln j_s/d In(dB_e/dt), where dB_e/dt is the sweep rate of the external magnetic field B_e, were measured as a function of temperature (5 K < T < 65 K) in magnetic fields up to 7 T on a twin-free DyBa₂Cu₃O_7−δ single crystal by means of a high-sensitivity capacitance torque magnetometer. Above 15 K, we observe a “fishtail” effect, i.e. a pronounced minimum in the j_s(B_e) curve at fields around B_e = 1 T. The relaxation rate Q shows an anomalous increase at low fields which is correlated to the minimum in the j_s(B_e) curve. Both the j_s versus B_e and Q versus B_e data are used as input parameters into the generalized inversion scheme developed by Schnack et al. [Phys. Rev. B 48 (1993) 13178] to calculate the true critical current density j_c which is by definition independent of relaxation effects. Interestingly, the j_c(B_e, T) curves derived in this way do not show a minimum. This points clearly to a dynamic contribution to the fishtail effect. The true critical current density j_c(B_e, T) decreases weakly with increasing B_e over the entire measured temperature and field range, as expected for single-vortex pinning. This indicates that the observed fishtail effect is not caused by a crossover from single-vortex pinning to pinning of flux bundles. The temperature dependence of j_c is in good agreement with the predictions of a model based on single-vortex pinning caused by spatial fluctuations in the charge-carrier mean free path.     

Properties of solvent-free perylene iodine

The perylene iodine system was prepared by a vapour-phase reaction without the use of solvents. Compositions between peryleneI₂ and peryleneI₆ were synthesized and studied by gravimetric analysis, infrared spectroscopy, X-ray diffraction and temperature-dependent resistivity measurements. Infrared spectra in the region 400–4000 cm⁻¹ taken after different amounts of iodine were removed from the sample are distinct from perylene with new absorption lines at 1551 and 1302 cm⁻¹ and shifts of some perylene frequencies. Powder X-ray diffraction measurements indicate that the lattice is monoclinic with parameters a=11.65 Å, b=10.85 Å, c=10.1 Å, β=100.5°. The (1 0 0) reflection, which is forbidden in the space group of perylene, is observed from the compound. The material is electrically conductive and obeys Ohm's law at high temperatures. At low temperatures and high currents, nonlinear effects are observed. The conductivity of the material increases to 1.0 (Ω cm)⁻¹ at room temperature as the iodine content increases to a composition of peryleneI₆. The resistivity obeys an exponential temperature dependence.     

Theory of the residual electrical resistivity of binary actinide alloys

A system of self-consistent equations has been proposed for the coherent potential approximation of the multiband conductivity model for the case of conduction electron scattering from chaotic electric fields of ions of disordered binary alloy components at zero temperature. It has been qualitatively demonstrated that the deviation of the concentration dependence of the residual electrical resistivity of actinide alloys with multiband conductivity from the Nordheim rule is caused by the explicit dependence of the electrical resistivity of the alloy on the magnitude and sign of the real part of the Green’s function at the Fermi level. The derived system of equations for the multiband coherent potential approximation has been used to calculate the concentration dependence of the density of states and the residual electrical resistivity of the alloys of neptunium and plutonium. The results of the calculations have been compared with the available experimental data.     

深过冷条件下Co_7Mo_6金属间化合物的枝晶生长和维氏硬度研究

采用电磁悬浮和自由落体两种实验技术对二元Co-50%Mo过共晶合金中初生Co_7Mo_6金属间化合物的生长机理和维氏硬度进行了系统研究.电磁悬浮实验中,合金熔体获得的最大过冷度为203 K(0.12T_L),初生Co_7Mo_6枝晶生长速度与过冷度之间呈现幂函数关系.随着过冷度的增大,初生枝晶中Co元素含量单调递增,枝晶尺寸明显减小,并且其维氏硬度逐渐升高.在自由落体状态下,随着液滴直径的减小,合金熔体的过冷度和冷却速率均增大.当液滴直径减小到392μm以下时,初生Co_7Mo_6枝晶从小平面向非小平面形态进行转变.实验发现,深过冷条件下Co_7Mo_6化合物发生了显著的溶质截留效应,其维氏硬度与Co元素分布和形貌特征密切相关.     

非晶Ni-P合金的晶化相

利用电镜双倾台倾转Ni₁₂P₅晶体以及对Vafaei-Makhsoos发表的数据的分析,证实了由他所提出的三个新的Ni₃P相并不存在。从而澄清了非晶Ni-P合金在加热过程中总共有七个晶化相析出:α=5.48?的面心立方亚稳相α,由此相转变生成的六角多型体α₁,α₂,α₃亚稳相,体心四方Ni₁₂P₅相,体心四方Ni₃P相及Ni固溶体。 关键词：     

多晶TaN1-δ薄膜的电输运性质研究

利用射频溅射法在石英玻璃基底上制备了一系列面心立方结构的多晶TaN_1-δ薄膜, 并对其晶体结构和2–350 K温度范围的电子输运性质进行了系统研究. 薄膜呈多晶结构, 并且平均晶粒尺寸随着基底温度的升高逐渐增大. 电输运测量结果表明, TaN_1-δ薄膜在5 K以下表现出类似超导体-绝缘体颗粒膜的电输运性质; 随着温度的升高, 薄膜在10–30 K表现出类似金属-绝缘体颗粒膜的性质; 在70 K以上, 热涨落诱导的遂穿导电机理主导着电阻率的温度行为. 我们的结果表明: TaN_1-δ多晶薄膜的类颗粒膜属性使其具有较高的电阻率和负的电阻温度系数.     

The effect of rare earth substitution on the magnetic properties of Ni0.5Zn0.5MxFe2−xO4 (M: rare earth)

Variation of the complex permeability with frequency of Ni_1−xZn_xFe₂O₄ (x=0.5, 0.6 and 0.7) prepared by a combustion method has been measured over a wide range of frequency, up to 1.8 GHz. Zn content improves permeability but moves the onset of resonance to lower frequencies.

The influence on some properties of samples prepared by the insertion of small amounts of Ruthenium, Yttrium and rare-earth cations into the Ni_0.5Zn_0.5M_xFe_2−xO₄ ferrite has been also investigated. Relative losses and Curie temperature of all the samples have been measured. Ferrites substituted with Ru and Gd improve microwave behavior compared to non-substituted samples.     

落管中Ni-Fe-Ti合金的快速凝固机理及其磁学性能

采用落管自由落体方法实现了Ni_(45)Fe_(40)Ti_(15)合金在微重力无容器条件下的快速凝固,获得了直径介于160—1050μm的合金液滴.理论计算表明冷却速率及过冷度随液滴直径减小而增大,并呈指数函数关系,实验获得的最大过冷度为210 K(0.14 T_L).随着过冷度增大,凝固组织中粗大的γ-(Fe,Ni)枝晶逐渐细化,二次枝晶间距减小,溶质Ti在γ-(Fe,Ni)相中的固溶度显著扩展.对不同直径合金液滴的凝固样品进行磁学性能分析,结果表明随着凝固合金液滴直径减小,其饱和磁化强度增大,矫顽力减小,矩形比下降,软磁性能明显提高.     

A contribution to the invar problem by hyperfine field distribution analyses

The Mössbauer spectra of Invar type Fe₆₅(Ni_1-xMn_x)₃₅ alloys (0 x 0.3) were analyzed to yield hyperfine field distribution (P(H)) curve. The P(H) curves of the alloy with x = 0, that is the “classical” Invar alloy, at 4.2 K is character ized by a relatively sharp main peak at 350 kOe and a weak low field component around 50 kOe. With increasing x, the low field component grows and the high field main peak spreads toward a low field. By raising temperature, the main peak exhibits a remarkable broadening as well as a decrease in the average internal field and a growth of the low field component has not been detected. On the basis of these observations, models of the Invar alloy so far proposed are discussed.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.     

Coexisting antiferromagnetism and ferromagnetism in mechanically alloyed Fe-rich Fe–Ni alloys: implications regarding the Fe–Ni phase diagram below 400°C

Fe–Ni alloys below the Invar region with compositions Fe_100−xNi_x (x=21, 24, and 27 at%) were prepared by high-energy ball milling technique (mechanical alloying). The as-milled samples, characterized by X-ray diffraction and Mössbauer spectroscopy, contain a mixture of (BCC) and γ (FCC) phases, whereas the samples annealed at 650°C for 0.5 h show a single γ (FCC) phase displaying a single line Mössbauer spectrum at room temperature (RT). At low temperature, the Mössbauer spectra of annealed Fe₇₆Ni₂₄ and Fe₇₃Ni₂₇ alloys show the existence of a magnetically split pattern together with a broad singlet, which are ascribed to a high-moment ferromagnetic Ni-rich phase and a low-moment Fe-rich phase, respectively. The Fe-rich phase in annealed Fe₇₆Ni₂₄ alloy, which is paramagnetic at RT, undergoes antiferromagnetic ordering at 40 K, estimated from the dramatic line broadening of its spectrum, giving rise to a small hyperfine field (e.g. 2 T at 6 K). The coexistence of these phases is attributed to phase segregation occurring in these alloys as a result of enhanced atomic diffusion. The stability of these alloys towards martensitic (FCC→BCC) transformation at low temperatures is discussed in connection with the Fe–Ni phase diagram below 400°C.