利用离子激发发光研究低温条件下ZnO发光行为EI北大核心CSCD

离子激发发光(Ions beam induced luminescence,IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H^(+)研究了300,200,100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射,结合Voigt分峰与XPS实验结果,确定红光(1.75 eV)与V_(Zn)相关,橙红光(1.95 eV)来自Zn_(i)到O_(i)跃迁;对于与V_(O)相关的绿光(2.10 eV),其红移可能由于温度降低导致更多电子由导带释放到Zn_(i)。峰中心位于3.10 eV和3.20 eV近带边发射分别来自于Zn_(i)到价带的跃迁和激子复合,红移原因分别为Zn_(i)附近局域化能级和带隙收缩。利用单指数公式对发光强度进行拟合,获得的衰减速率常数(f)可以表征缺陷的辐射硬度,对比发现深能级发射峰在200 K时辐射硬度最大,而近带边发射峰在300 K时辐射硬度最大。     

正电子湮没谱和光致发光谱研究掺锌GaSb质子辐照缺陷

用正电子湮没谱和光致发光谱研究了质子辐照后掺锌GaSb中的缺陷.通过分析正电子的缺陷寿命τ₂及强度I₂的变化发现,在高能质子的辐照下产生了双空位缺陷V_GaV_Sb,可能同时产生了小的空位团.正电子平均寿命τ_av和S参数随着质子辐照剂量的变化也证明了这一结论.通过分析不同质子辐照剂量下掺锌GaS     

Helium irradiation-induced defects in deformed 316L stainless steel

Well-annealed 316L stainless steel was first cold rolled to 10% and 20% reductions in thickness and then irradiated by 50 keV He⁺ to a dose of 1 × 10²⁰ He⁺/m² at room temperature. Thermal desorption spectroscopy was used to investigate the helium desorption behaviour at different helium trapping states. The results showed that high-density dislocations had stronger inhibitory effect for helium desorption at temperatures from 800 to 1200 K. Positron annihilation Doppler broadening spectroscopy measurements were used to investigate the distribution of helium irradiation-induced defects. The S–E and ΔS–E plots clearly demonstrated that the helium irradiation-induced defects were trapped and restricted in motion by dislocations. The interaction between dislocations and helium irradiation-induced defects in deformed 316L stainless steel was investigated.     

Effect of hydrogen defects on nanocrystallite layers of Si solar cells by hydrogen implantation

The Si solar cells were irradiated with high energy hydrogen ions of 10, 30, 60 and 120?keV at the dose rate of 10¹⁷ H⁺ ions (proton)/cm². The structural, optical and electrical properties of the implanted samples and fabricated cells were studied. The implantation induced defects bringing structural changes before and after annealing was evidenced by the transmission electron microscopy. The Raman spectrum showed a change of crystalline to amorphous state at 480?cm^?1 when the sample was implanted by hydrogen ion of 30?keV energy. Formation of nanocrystallite layers were observed after annealing. The electroluminescence images showed that hydrogen-related defect centers were involved in the emission mechanism. The photoluminescence emission from the implanted cells was attributed to nanocrystallite layers. From current–voltage measurements, the conversion efficiencies of implanted Si solar cells were found lower than the un-implanted reference cell. The ion implantation did not passivate the defects rather acted as recombination centers.     

The photoluminescence of ZnSe bulk single crystals excited by femtosecond pulse

This paper reports on the photoluminescence spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500--700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain \va in ZnSe crystal is estimated to be about 8.8 \ti10^-3 at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500--700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor--vacancy pair, and it is also influenced by a few selenium defects and the temperature. The rapid decrease in photoluminescence intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine--zinc vacancy in 500--700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He--Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.     

Defects and radiation induced electronic processes in magnesium aluminate spinel of different compositions

The time dependence of the formation and decay of irradiation-induced optical absorption centers in magnesium aluminate spinel single crystals of different compositions (MgO - 1.0Al 2 O 3 and MgO - 2.5Al 2 O 3 ) was investigated. The kinetics of accumulation of X-ray irradiation-induced absorption bands is consistent with the mechanism of trap filling with free charge carriers through the conduction band. The model includes Coulomb blocking effects on spatially correlated defects. The observed two-stage decay of absorption bands after termination of X-ray irradiation is explained by electron hole recombination between centers of two different distances and/or different potential barriers. UV-irradiation confirms the existence of charge exchange between complex spatially correlated defects.     

Luminescence anisotropy of ZnO microrods

The local features of light emission from ZnO microrods were studied: it is revealed that ZnO luminescence spectra are significantly influenced by the crystal morphology. It is shown that the near and edge ultraviolet emission occurs primarily from the top (0001) planes of ZnO microrods; while the defect related visible emission was found to occur dominantly from the side facets. The room temperature cathodoluminescence analysis revealed that visible emission consists of a few overlapping peaks, arising due to recombination on common points and surface defects (Zn_i, V_o, V_o⁰/V_o^?*_, V_o^** and surface defects.). While at low temperature, only the luminescence due to neutral donor bound exciton (D⁰X) emission is observed. The data obtained suggest that the light emission spectra of ZnO material of diverse morphology cannot be directly compared, although some common spectral features are present.     

Accumulation and annealing of implantation damage in a-Si:H

Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H⁺, B⁺, P⁺, and Ar⁺ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T _a<250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.     

Effect of Ag doping on the photoluminescence properties of ZnO films

ZnO:Ag films were grown on Si (1 0 0) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT-PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550 °C, the intensity of the near-band edge (NBE) emission at 378 nm decreased and a new emission peak at 399 nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399 nm emission should be attributed to the electron transition from the conduction band to Ag_Zn-related complexes defects radiative centers above the valence band.     

Photoluminescence and radioluminescence study of NaMgF3:Eu nanoparticles

Photoluminescence (PL) and radioluminescence (RL) measurements were made on small (∼25 nm) NaMgF₃ nanoparticles doped with Eu concentrations ranging from 0.1% to 5%. We find that they contained Eu³⁺, Eu²⁺, and an additional unidentified defect with a broad PL emission ∼470 nm. Similar to previous measurements on larger (57 nm–77 nm) NaMgF₃:Eu nanoparticles with 1% Eu and 5% Eu, we find that the PL lifetime decreases with increasing Eu concentration that can be attributed to Eu energy transfer to non-radiative recombination sites. However, there is no change in the fraction of Eu³⁺ distorted sites. The ∼470 nm PL defect peak was also reported for larger nanoparticles, which suggests that this peak arises from similar unidentified point defects. However, the activated non-radiative decay for the small nanoparticles has a significantly lower activation energy. The Eu³⁺ RL decreases by only 2.3% at 10 kGy for low Eu concentrations.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Dependence of photoluminescent properties of cubic Y2O3:Tb nanocrystals on particle size and temperature

Temperature-dependent spectral properties in the cubic Y₂O₃:Tb³⁺ nanocrystals (NCs, 10-70 nm) under 488 nm excitation were studied and compared to that in the bulk. In NCs, emission lines assigned to the ⁵D₄-⁷F_J (J=1-6) transitions of Tb³⁺ ions and a broad band originated from oxygen defects were observed. As a function of temperature, two intensity maximums of the ⁵D₄-Σ⁷F_J transitions appeared in the NCs, at ∼250 and ∼500 K, while in the bulk only one maximum appeared at ∼250 K. The relative intensity of the maximum at ∼500 K to that at ∼250 K increased with decreasing particle size. The intensity maximum of the band emissions that came from the oxygen defects appeared in the range of 500-600 K. The appearance of intensity maximum as a function of temperature was attributed to the rivalry between thermal quenching process and phonon-assisted excitation. The appearance of two maxima in the NCs was attributed to the luminescence contributed by different Tb³⁺ centers, the internal and the surface. The emission for the surface Eu³⁺ centers has higher quenching temperature in contrast to that for the internal centers.     

Effects of annealing temperature on the structure, photoluminescence and ferromagnetism properties of Cr-implanted ZnO nanowires

Room temperature ferromagnetism was observed in Cr-implanted ZnO nanowires annealed at 500, 600, and 700 °C. The implantation dose for Cr ions was 1×10¹⁶ cm^?2, while the implantation energies were 100 keV. Except for ZnO (100), (002), and (200) orientations, no extra diffraction peaks from Cr-related secondary phase or impurities were observed. With the increasing of annealing temperatures, the intensity of the peaks increased while the FWHM values decreased. The Cr 2p_1/2 and 2p_3/2 peaks, with a binding energy difference of 10.6 eV, appear at 586.3 and 575.7 eV, can be attributed to Cr³⁺ in ZnO nanowires. For the Cr-implanted ZnO nanowires without annealing, the band energy emission disappears and the defect related emission with wavelength of 500–700 nm dominates, which can be attributed to defects introduced by implantation. Cr-implanted ZnO nanowires annealed at 500 °C show a saturation magnetization value of over 11.4×10^?5 emu and a positive coercive field of 67 Oe. The origin of ferromagnetism behavior can be explained on the basis of electrons and defects that form bound magnetic polarons, which overlap to create a spin-split impurity band.     

ZnO nanoparticles produced by novel reactive physical deposition process

This paper reports the deposition of ZnO nanoparticles with controlled sizes and different particle densities and their structural, composition and optical properties. They were deposited by means of a DC magnetron based vacuum nanoparticle source onto different substrates (GaAs, Si and Ti/SiO₂/Si). We believe that this is the first time that such nanoparticles have been produced using this unique technique. Zinc was used as sputtering target to produce zinc nanoparticles which were oxidized in-line using molecular oxygen. The structural properties and chemistry of the ZnO were studied by transmission electron microscopy. An average particle size of 6(±2) nm was produced with uniform size distribution. The particle density was controlled using a quartz crystal monitor. Surface densities of 2.3 × 10¹¹/cm², 1.1 × 10¹³/cm² and 3.9 × 10¹³/cm² were measured for three different deposition runs. The ZnO particles were found to be single crystalline having hexagonal structure. Photoluminescence measurements of all samples were performed at room temperature using a cw He-Cd laser at 325 nm excitation. The UV emission around 375 nm at room temperature is due to excitonic recombination and the broad emission centered at 520 nm may be attributed to intrinsic point defects such as oxygen interstitials.     

On the Zeeman effect of the principal emission line of high purity CuI at very low temperatures

The strong emission line at 24346 cm^-1 (4.2 K) is attributed to the radiative recombination of excitons bound to neutral acceptors (A⁰, X).     

Photoluminescence spectra of the AgGaTe2 single crystals doped with hydrogen

The photoluminescence spectra of single crystals of the ternary AgGaTe₂ compound obtained by the Bridgman-Stockbarger method are studied before and after bombardment by the 100-eV hydrogen ions of dose 10¹⁵ cm^?2. The spectra were detected in the temperature range from 10 to 300 K at various powers of laser excitation. The spectra exhibit emission bands related to the donor-acceptor recombination, free, and bound excitons. The intensity of these bands in crystals doped with hydrogen is higher than that in undoped crystals. This is explained by the passivation of defects in a crystal lattice by hydrogen. The binding energy of a free exciton and the band gap in AgGaTe₂ crystals are calculated at 10 K.     

Determination of trapping–detrapping events,recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Analysis of the out-of-phase modulated photocurrent (MPC) signal, the so-called Y signal, is proposed for determining the trapping–detrapping events, recombination processes and gap-state parameters in amorphous silicon. This is demonstrated by analysing experimental Y spectra obtained on this material from different laboratories including our own. Model simulations are also employed in which the amphoteric nature of the dangling bonds and their distribution according to the defect-pool model are taken into account. From the reconstruction of the Y signal, phase shift and MPC amplitude spectra, several contributions resolved from the frequency dependence of the experimental Y spectra are identified. Two electron trapping–detrapping processes are resolved. These are attributed to hydrogen-related positive defects and to transitions involving the D^+/0 level of the normal dangling bonds from the defect-pool distribution. At lower frequencies a residual contribution is resolved that is attributed to a term related to recombination through the D^+/0 and D^0/? levels. Between 300 and 150?K the above recombination contribution is essentially from the D^0/? and dominates the Y signal at lower frequencies. In this region a characteristic phase lead appears, which is attributed to the existence of safe hole traps in the valence band tail. Around 150?K, trapping–detrapping events in the conduction band tail dominate.     

β-irradiation effect in aluminoborosilicate glasses: The role of <Emphasis Type="Italic">RE</Emphasis> codoping (<Emphasis Type="Italic">RE</Emphasis> = Sm,Gd)

The effect of Sm and Gd codoping on the structural modifications of β-irradiated aluminoborosilicate glasses has been studied by electron paramagnetic resonance (EPR) and Raman spectroscopy. The EPR spectra showed that the relative amount of Gd³⁺ ions occupying network former positions (Gd_[n.f.]³⁺) follows a nonlinear behavior as a function of the Sm/Gd ratio. This suggests that codoping favors the occupation by Gd³⁺ ions of the network former positions rather than the modifier positions in aluminoborosilicate glasses. The appearance of a superhyperfine structure of EPR lines attributed to boron-oxygen hole centers (BOHC) with increasing Sm/Gd ratio was observed. This suggests that Gd³⁺ ions are diluted in the vicinity of the BOHC defects. The concentration of defects created by irradiation reveals a nonlinear dependence on Sm and Gd codoping for the lowest irradiation dose (10⁵ Gy). Therefore, codoping also affects the defect creation processes at least at the lowest irradiation dose. Raman spectroscopy measurements suggest that the irradiation-induced structural changes vary nonlinearly with the Sm/Gd ratio. In fact, the shift of the Si-O-Si bending vibration modes reveals a clear minimum for samples containing equal amounts of Sm and Gd (1: 1) in the investigated glasses. The text was submitted by the authors in English.     

Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH₃COO)₂ and Na₂S₂O₃, and pH is controlled in an acidic region by adding H₂SO₄. The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1×10¹¹, 1×10¹², 1×10¹³ and 1×10¹⁴ ions/cm² using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences.     

Photoluminescence spectroscopy of defects in ZnO nano/microwires

Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90 K. The defect, acting as binding site for bound exciton (BX) transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet (UV) luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.