δ掺杂的赝形高电子迁移率晶体管AlGaAs/InGaAs/GaAs结构的光谱研究

报道δ掺杂赝形高电子迁移率晶体管结构Al(?)Ga(?)As/In(?)Ga(?),As/GaAs的综合光谱研究结果。采用光致发光光谱,平面光电流谱和光致发光激发光谱方法,并与理论计算相对比,确认了光致发光谱上n=1电子子带n=2电子子带到n=1重空穴子带间的强发光峰,对弱峰C的研究表明它是n=1电子子带到n=1轻空穴子带复合跃迁的发光峰。由于费密能级高于第二电子子带,没有发现文献中曾报道过的属于费密边的发光峰;平面光电流谱和光致发光激发光谱观察到n=1重空穴子带到n=1,2,3电子子带的三个激子跃迁峰。 关键词：     

掺杂ZnSe/BeTe Ⅱ型量子阱结构中带电激子的磁场效应

报道了n型掺杂ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-Ⅱ QW)在极低温 (5—10 K)条件下的各种光学性质. 磁场中(Farada配置)ZnSe层的反射光谱展示了一个典型的负的带电激子(X^-)的跃迁特征. 对于空间间接光致发光(spacially indirect PL)光谱,它的主发光峰显示了一个反玻尔兹曼分布的非对称性,并且在磁场中(Voigt配置)它的峰值能量随磁场的增加而降低. 这些实验结果显示了该掺杂样品的空间间接PL是来自Ⅱ型QW结构所特有的带电激子的跃迁. 关键词： 光致发光 二维电子气 带电激子 Ⅱ型量子阱     

MOCVD方法生长ZnO微米柱的结构与光学性质

通过X射线衍射、扫描电子显微镜和变温光致发光光谱对MOCVD方法生长在蓝宝石衬底上的ZnO微米柱材料的结构及发光特性进行了表征.X射线衍射结果表明,ZnO具有良好的c轴择优取向,扫描电子显微镜图中可观察出ZnO微米在呈六角结构生长,半径约为0.5～1.5μm.样品的发光光谱通过He-Cd激光器的325nm线激发,从光谱中发现低温(81K)下出现极强的与激子相关的带边发光峰,温度升高到360K时与自由激子相关的紫外发射峰仍然是清晰可见.     

GaAs/AlGaAs异质结的界面束缚二维激子效应

本文讨论了GaAs/AlGaAs异质结界面的H线发光及其性能。用双晶X射线衍射及皮秒光致发光证明了H线与界面质量密切相关,并且有相似于激子跃迁的寿命行为。用限制于异质结界面势阱的二维电子(或空穴)与分布于GaAs边的三维空穴(或电子)组成的二维激子效应,解释了H线的实验结果。并讨论了不同外延生长的异质结与界面有关的发光行为。     

调制掺杂ZnSe/BeTe Ⅱ型量子阱结构中的内秉电场和新型带电激子

报道了调制掺杂的ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-Ⅱ QW)在低温(2—5 K)条件下的光致发光(PL),光致发光激发(PLE)和磁性光致发光(magneto-PL)光谱的实验结果.　观察到非掺杂样品的PL有两个很强的主发光峰而掺杂样品只有一个的奇异发光.　PL直线偏振度和PLE的测量结果都表明了这些空间间接型跃迁PL是来自两个异质结界面的贡献,非掺杂样品的两个主发光峰的分离则是起因于QW结构中的内秉电场(built-in electric field).在平行于QW生长方向的强磁场中, 关键词： 光致发光 二维电子气 带电激子 Ⅱ型量子阱     

纳米ZnO镶嵌SiO2薄膜的磁控溅射制备和发光性质的研究

采用射频磁控反应溅射方法在SiO衬底上制备了纳米ZnO镶嵌SiO2薄膜.在室温下利用吸收光谱和光致发光光谱研究了样品的光学性质.发现吸收光谱随纳米ZnO尺寸的减小发生了明显的蓝移,表明随着ZnO尺寸的减小,量子尺寸效应增强,导致带隙展宽,吸收峰蓝移.光致发光光谱在387和441 nm附近出现了两个发光带,分析认为紫外发光来源于自由激子的辐射复合,而蓝色发光带来自于氧空位的电子到价带的跃迁,并用时间分辨光谱和发光衰减证实了上述观点.     

SiO2厚度对类阴极射线发光中电子加速的影响

研究了有机 /无机复合结构ITO/SiO2 /MEH PPV/SiO2 /Al器件的类阴极射线发光性质 ,电子经过SiO2层加速后 ,激发MEH PPV层发光。发光除了MEH PPV激子发光峰外 ,还有一个带间复合的能量更高的短波发光峰。通过 2个发光峰随SiO2 层的厚度的变化规律 ,研究了SiO2 对电子的加速能力。     

X射线辐照后BaFC1中缺陷性质的研究

未掺Eu2+的BaFCl粉末样品在80K下经X射线辐照后,在不同的温度条件下(从80K副273K),用580nm的光波激励样品时观测到310nm和380nm的发光峰.经分析认为,样品经X射线辐照后,在晶体中形成两种卤素离子的F-H''心对.当用F心吸收带的光波激励样品时,两种F—H心对衰变成相应的自陷激子态并复合发光.310nm和380nm分别对应于F-离子和Cl-离子的自陷激子的发光,并且它们的发光强度强烈地依赖于温度的变化。     

Zn元素替代对MgGa2O4∶Cr3+的结构和发光性能的影响

采用高温固相法按化学式Zn_xMg_(1-x)Ga₂O₄∶Cr3+(x=0,0.2,0.6,0.8,1.0)配比原料制备了一系列红色长余辉发光材料。X射线衍射(XRD)分析表明样品物相均为面心立方结构。光致发光特性表明样品的红光发射峰均由以Cr3+为发光中心的电子2E—4A₂跃迁所致,Cr3+的激发带与基质发射带之间有大面积重叠,两者间存在有效的能量传递。余辉衰减曲线与热释光谱分析表明,不同Zn掺入量的样品余辉衰减快慢不同,是由于其中存在的陷阱能级深度不同,且陷阱能级越深,其余辉时间越长。     

X射线辐照后BaFC1中缺陷性质的研究

未掺Eu~(2+)的BaFCl粉末样品在80K下经X射线辐照后,在不同的温度条件下(从80K副273K),用580nm的光波激励样品时观测到310nm和380nm的发光峰.经分析认为,样品经X射线辐照后,在晶体中形成两种卤素离子的F-H’心对.当用F心吸收带的光波激励样品时,两种F—H心对衰变成相应的自陷激子态并复合发光.310nm和380nm分别对应于F-离子和Cl-离子的自陷激子的发光,并且它们的发光强度强烈地依赖于温度的变化。     

Mn掺杂对ZnO薄膜结构及发光性能的影响

利用脉冲激光沉积的方法在Si衬底上生长出了c轴高度取向的Mn掺杂ZnO薄膜.X射线衍射表明所有样品都具有纤锌矿结构,没有发现其它相,随着掺杂量的增加,c轴晶格常数增大.原子力显微镜结果显示:Mn的掺杂引起了ZnO薄膜表面粗糙度的变化.由光致发光谱发现,在387 nm附近出现了由于近带边自由激子复合引起的紫外峰,还有以4...     

Magneto-optical properties and exciton dynamics in diluted magnetic semiconductor nanostructures

Nanostructures of diluted magnetic semiconductors were fabricated to study novel magneto-optical properties that are derived from quantum confined band electrons interacting with magnetic ions. Quantum dots (QDs) of Cd_0.97Mn_0.03Se were grown by the self-organization on a ZnSe substrate layer. QDs of Zn_0.69Cd_0.23Mn_0.08Se and quantum wires (QWRs) of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se were fabricated by the electron beam lithography. A single quantum well (QW) of ZnTe/Zn_0.97Mn_0.03Te and double QWs of Cd_0.95Mn_0.05Te–CdTe were grown by molecular beam epitaxy. Magneto-optical properties and the formation and relaxation dynamics of excitons were investigated by ultrafast time-resolved photoluminescence (PL) spectroscopy. Excitons in these nanostructures were affected by the low-dimensional confinement effects and the interaction with magnetic ion spins. The exciton luminescence of the Cd_0.97Mn_0.03Se QDs shows the confined exciton energy due to the dot size of 4–6 nm and also shows marked increase of the exciton lifetime with increasing the magnetic field. The QDs of Zn_0.69Cd_0.23Mn_0.08Se fabricated by the electron beam lithography display narrow exciton PL spectrum due to the uniform shape of the dots. The exciton luminescence from the QWRs of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se shows the influence of the one-dimensional confinement effect for the exciton energy and the luminescence is linearly polarized parallel to the wire direction. The transient PL from the ZnTe/Zn_0.97Mn_0.03Te QWs displays, by the magnetic field, the level crossing of the exciton spin states of the nonmagnetic and magnetic layers and the spatial spin separation for the excitons. Cd_0.95Mn_0.05Te–CdTe double QWs show the injection of the spin polarized excitons from the magnetic well to the nonmagnetic QW.     

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E₀和E₀+Δ₀没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~10¹⁷cm^-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。     

PHOTOCONDUCTIVITY OF Cd0.7Mn0.3Se

The photoconductivity spectra of semimagnetic semiconductor Cd0.7Mn0.3Se have been measured at 50-300 K and in the wavelength range of 5500 ? to 8000 ?. It is found that the energy gap of Cd0.7Mn0.3Se changes with the temperature linearly, and the temperature coefficient (dEg/dT) is about -7×10-4 eV/K. A photoconductivity peak which is related to Mn2+ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd1-xMnxSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

Magnetic entropy change and magnetic properties of LaFe_(11.5)Si_(1.5) after controlling the Curie temperature by partial substitution of Mn and hydrogenation

Magnetic properties and magnetic entropy changes of La(Fe_(1-x)Mn_x)_(11.5)Si_(1.5)H_y compounds are investigated. Their Curie temperatures are adjusted to room temperature by partial Mn substitution for Fe and hydrogen absorption in 1-atm(1 atm = 1.01325×10~5Pa) hydrogen gas. Under a field change from 0 T to 2 T, the maximum magnetic entropy change for La(Fe_(0.99)Mn_(0.01))_(11.5)Si_(1.5)H_(1.61)is-11.5 J/kg. The suitable Curie temperature and large value of ?S_m make it an attractive potential candidate for the room temperature magnetic refrigeration application.     

FORMATION AND MAGNETIC PROPERTIES OF Dy2Fe17-xMnxC(x = 0-17) PREPARED BY ARC-MELTING

We report on alloys formed by replacing iron with manganese in the compound Dy₂Fe₁₇C_1.0 Samples were characterized by X-ray diffraction and magnetic measure-ments, The 2:17-type structure can be crystallized in the whole range of manganese substitution. The Curie temperature of the series of Dy₂Fe_17-xMn_xC_1.0(x= 0-17) drops down considerably from 515K for x = 0 to about 20K for compounds with high manganese concentration, and the compensation point was observed in a narrow range of x≈4-6. The rapid decrease of the magnetization shows that the manganese substitution is not a simple magnetic dilution to the transition-metal sublattice mo-ment, it indicates that the moment of Mn may be antiparallel to that of Fe. The field dependence of the magnetization of Dy₂Fe_17-xMn_xC_1.0 may indicate the existence of the nonlinear magnetic structure for the samples with high Mn conoentrations.     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

High-temperature ferromagnetism in Zn1−xMnxO semiconductor thin films

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn_1−xMn_xO thin films grown on Al₂O₃ and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ_B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.     

Excitonic properties of nanostructure semimagnetic semiconductors

Magneto-optical properties of semimagnetic semiconductors with nanometer-scale structures (nanostructures) are described. Superlattices of the CdTe/Cd_{1 − x}Mn_xTe and Cd_{1 − x}Mn_xTe/ZnTe systems and microcrystals of Cd_{1 − x}Mn_xSe were grown by epitaxy and sputtering methods. These semimagnetic semiconductor nanostructures show remarkably enhanced magneto-optical responses in the optical absorption, the luminescence and the dynamics of the confined excitons. The results are interpreted by the quantum-confined excitonic states interacting with the magnetic ion spins involved in the nanostructures.     

第一性原理的广义梯度近似+U方法的纤锌矿Zn1-xMgxO极化特性与Zn0.75Mg0.25O/ZnO 界面能带偏差研究

在纤锌矿结构Zn_1-xMg_xO/ZnO异质结构中发现了高迁移率的二维电子气(2DEG), 2DEG 的产生很可能是由于界面上存在不连续极化, 而且2DEG通常也被认为是由极化电荷产生的结果. 为了探索2DEG的形成机理及其产生的根源, 研究Zn_1-xMg_xO合金的极化特性与ZnO/Zn_1-xMg_xO超晶格的能带排列是非常必要的. 基于第一性原理广义梯度近似+U方法研究了Zn_1-xMg_xO合金的自发极化随Mg组分x的变化关系, 其中极化特性的计算采用Berry-phase方法. 由于ZnO与Zn_1-xMg_xO 面内晶格参数大小相当, ZnO 与Zn_1-xMg_xO 的界面匹配度优良, 所以ZnO/Zn_1-xMg_xO 超晶格模型较容易建立. 计算了Mg_0.25Zn_0.75O/ZnO超晶格静电势的面内平均及其沿着Z(0001)方向上的宏观平均. (5+3)Mg_0.25Zn_0.75O/ZnO超晶格拥有较大的尺寸, 确保远离界面的Mg_0.25Zn_0.75O与ZnO区域与块体计算情况一致. 除此之外, 基于宏观平均为能量参考, 计算得到Mg_0.25Zn_0.75O/ZnO超晶格界面处价带偏差为0.26 eV, 并且导带偏差与价带偏差的比值处于合理区间, 这与近来实验上报道的结果相符. 除了ZnO在[0001]方向上产生自发极化外, 由于在ZnO中引入Mg杂质会产生应变应力, 导致Mg_xZn_1-xO层产生额外的极化值. 这样必然会在Mg_0.25Zn_0.75O/Zn界面处产生非连续极化现象, 促使单极性电荷在界面处积累, 从而在Mg_0.25Zn_0.75O/Zn超晶格中产生内在电场. 此外, 计算了Mg_0.25Zn_0.75O/ZnO超晶格的能带排列, 由于价带偏差Δ E_V=0.26 eV与导带偏差ΔE_C=0.33 eV, 表明能带遵循I型排列. Mg_0.25Zn_0.75O/ZnO 的这种能带排列方式足以让电子与空穴在势阱中产生禁闭作用. 2DEG在电子学与光电子学领域都有重要应用, 本文的研究结果将对Mg_0.25Zn_0.75O/ZnO 界面2DEG的设计与优化中起到重要作用, 并且可以作为研究其他Mg组分的Mg_xZn_1-xO/ZnO超晶格界面电子气特性的参考依据.