Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si（111）

SiC films were prepared by heating polystyrene/Si（111） in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges： increasing slowly （1200-1250 ℃）, increasing quickly （1250- 12.70 ℃）, and decreasing （1270-1300 ℃）. The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5,522.5, and -127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.     

Applied bias photon-to-current conversion efficiency of ZnO enhanced by hybridization with reduced graphene oxide

The role of reduced graphene oxide(rGO) in the enhancement of photo-conversion efficiency of ZnO films for photoelectrochemical(PEC) water-splitting applications was analyzed. ZnO and rGO-hybridized ZnO(rGO/ZnO) films were prepared via a two-step electrochemical deposition method followed by annealing at 300 °C under argon gas flow. The physical, optical and electrochemical properties of the films were characterized to identify the effect of rGO-hybridization on the applied bias photon-to-current efficiency(ABPE) of ZnO. Scanning electron microscopy and X-ray diffraction indicated the formation of verticallyaligned, wurtzite-phase ZnO nanorods. Diffuse-reflectance UV–visible spectroscopy indicated that rGO-hybridization was able to increase the light absorption range of the rGO/ZnO film. UPS analysis showed that hybridization with rGO increased the band gap of ZnO(3.56 eV) to 3.63 eV for rGO/ZnO sample,which may be attributed to the Burstein–Moss effect. Photoluminescence(PL) spectra disclosed that rGOhybridization suppressed electron-hole recombination due to crystal defects. Linear sweep voltammetry of the prepared thin films showed photocurrent density of 1.0 and 1.8 m A/cm~2 for ZnO and rGO/ZnO at+0.7 V, which corresponded to an ABPE of 0.55% and 0.95%, respectively. Thus, this report highlighted the multi-faceted role of rGO-hybridization in the enhancement of ZnO photo-conversion efficiency.     

Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of （002）. The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%（molar fraction）. Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%（molar fraction）.     

Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells

Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.     

Influence of Annealing on Properties of ZnO Films Grown via Plasma－enhanced MOCVD

The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced met-al-organic chemical vapour deposition(MOCVD) on C-plane sapphire substrate were studied. The crystallini-ty and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmo-sphere. The structure, the band gap and the binding energy of O1s electrons, and the molar ratio of O to Zn were determined by X-ray diffraction (XRD), photoluminescence (PL) and X-ray photoelectron scan meth-ods. For both the annealed and the as-grown films, the exciton peak features were observed at room temper-ature. The band-edge photolof the annealed film is much stronger than that of the as-grown film, and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0. 91, while it is 0. 78 for the as-urown film.     

Effect of Sb on the properties of anodic Pb(Ⅱ) oxide film formed in alkaline solution

The composition and properties of the anodic films formed on Pb and Pb-3at.%Sb alloy at -0.10 V (vs. Hg/HgO) for 2.5 h in 0.1 mol.dm-3 NaOH solution (25℃) were investigated by cyclic voltammetry, linear sweep voltammetry, open circuit decay curve, photocurrent technique, X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the anodic film formed oh Pb mainly consists of t-PbO, while that on Pb-3at.%Sb consists of o-PbO, t-PbO and a small amount of orthorhombic Sb2O3. The dominant component of the film anodically grown on Pb-3at.%Sb for less than 5 min is o-PbO, however, t-PbO is the major component of the anodic film formed for 1 h or longer. It is established that Sb suppresses the growth of t-PbO. The anodic film formed on Pb-3at.%Sb is less porous than that on Pb. The bandgap energies of t-PbO and o-PbO in the films were determined by photocurrent measurements to be 1.83-1.84 eV and 2.60 eV, respectively.     

溶胶-凝胶法制备Ca10(PO4)6(OH)2 /TiO2复合涂层及其在模拟生理体液中的行为

The composite films consisting of hydroxyapatite (HAP) submicron particles embedded in the gel composed of the titania nanoparticles were prepared on commercial Ti6A14V plates with titania buffer layer obtained by a spin-coating technique. The films were calcined in air at various temperatures, and the bioactivities of the films were investigated by immersing them in acellular simulated body fliud (SBF). X-ray diffraction(XRD), Fourier transform infrared spectroscopy (FTIR), Field emission-scanning electron microscopy(FESEM) and Energy dispersive X-ray (EDS) analysis were employed to investigate the phase formation and structure of the films before and after immersion, and the variations of Ca and P contents in SBF were measured by Inductively Coupled Plasma Spectroscopy(ICP). The results show that the as-prepared films were dense, homogeneous, all well-crystallized, and there was a close interracial bond between the film and the substrate. The characterisatics of the grown layer on the surfaces of the HAP/TiO2 films after immersion in SBF for different periods of time are specially discussed.     

磷掺杂TiO2薄膜的制备与表征及其可见光照射下光催化降解邻苯二甲酸丁苄酯性能（英文）

P‐doped TiO2 (PTIO) thin‐films with different P contents were prepared using a sol‐gel method. The thin‐film samples were characterized using various techniques. The photocatalytic activity was evaluated by decomposing butyl benzyl phthalate under visible‐light irradiation. The results showed that the transformation of anatase to the rutile phase was inhibited and grain growth of TiO2 was prevented by P doping. The results confirm that the doped P atoms existed in two chemical forms, and those incorporated in the TiO2 lattice may play a positive role in photocatalysis. The high photocatalytic activities of the PTIO thin‐films may be the result of extrinsic absorption through the creation of oxygen vacancies, rather than excitation of the intrinsic absorption band of bulk TiO2 . The PTIO can be recycled with little depression of the photocatalytic activity. After six cycles, the photocatalytic activity of the PTIO film was still higher than 98%.     

Effects of ZnO Buffer Layer Thickness on Properties of MgxZn1-xO Thin Films Deposited by MOCVD

High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.     

Preparation of TiO2/ITO film electrode by AP-MOCVD for photoelectrocatalytic application

Titanium dioxide (TiO2 ) thin films were grown onto Indium tin oxide (ITO) glass under atmospheric pressure by chemical vapor deposition (AP-MOCVD) using titanium tetraisopropoxide astitanium precursor. The as-prepared TiO2 /ITO films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and photoelectrochemical measurements. Their photocatalytic (PC) and photoelectrocatalytic (PEC) activities were evaluated based on the results of methyl orange dye (MO) degradation experiments in aqueous solution. The difference between the front side (EE, electrolyte/electrode interface) and the back side (SE, substrate/electrode interface) illumination was evaluated in both photocurrent and MO degradation experiments. The effect of the film thickness on degradation rate by PEC under the two illumination directions was also studied. Stability of TiO2 /ITO film electrode was investigated in repetitive degradation experiments. Overall, the TiO2 /ITO film with thickness ranging from 321 to1440 nm deposited by MOCVD method is an effective photoelectrode for MO degradation under SE illumination in PEC reaction system.     

溶液法制备的氧化锌多层膜及其场效应性质(英文)

通过旋涂法,采用不同浓度的前躯体制备了氧化锌多层膜,并制备了基于此多层膜的薄膜晶体管器件.实验证明,基于按照氧化锌前躯体浓度顺序为0.25、0.10和0.05 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的晶体管器件的载流子迁移率为0.02 cm.2V-.1s-1,高于按照浓度顺序为0.05、0.10和0.25 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率(0.013 cm2.V-.1s-1).原子力显微镜(AFM)结果表明,前一种薄膜粗糙度的均方根值(rms)为3.95 nm,而后一种薄膜粗糙度的rms远远高于前者,为4.52 nm,这就说明了氧化锌薄膜的粗糙度对薄膜的半导体性质有很大的影响,这是由于平整的薄膜有利于形成理想的源/漏电极与半导体层的接触.在晶体管中,起传输作用的半导体层是靠近ZnO/SiO2界面处的几纳米的半导体层中的氧化锌晶粒,因此起始形成的氧化锌薄膜的结晶度影响着晶体管的性能.采用X射线衍射(XRD)测试了多层膜中起始形成的薄膜的结晶性能.对于前一种薄膜,起始形成的薄膜为多晶薄膜,而对于后一种薄膜,起始形成的薄膜是无定形薄膜.因此,粗糙度以及起始形成的薄膜的结晶度影响着多层半导体薄膜的性质.     

耐蚀Zn-Al合金材料的组合材料芯片方法优选

应用组合材料芯片方法, 通过离子束溅射法制备了全组分范围的Zn-Al薄膜样品阵列. 沉积得到的多层薄膜经370 ℃扩散处理2 h形成合金薄膜. 通过扫描俄歇能谱仪(AES)、X射线衍射仪(XRD)及扫描电子显微镜(SEM)对样品的成分、结构和形貌进行表征. 结果显示, 在低温退火后, 合金薄膜成分均匀, 结晶良好, 表面致密. 材料芯片上的样品在0.1 mol·L-1氯化钠溶液中的极化电阻测试结果表明, 对于全组分的Zn-Al合金薄膜, Al摩尔分数在87%附近的成分具有最高的极化电阻值.进一步的实验发现, 在83%-86%这一较宽的摩尔分数区间内, 极化电阻值均保持在105 Ω·cm-2以上, 比传统热镀锌镀层的极化电阻高1个数量级.     

阳极氧化TiN薄膜制备N掺杂纳米TiO2薄膜及其可见光活性

室温下通过电泳沉积(EPD)的方法在Ti片表面制备TiN薄膜, 然后对TiN薄膜进行阳极氧化得到N掺杂多孔纳米结构的TiO2薄膜. 利用X射线衍射(XRD), X射线光电子能谱(XPS), 扫描电子显微镜(SEM)及光电化学方法对得到的薄膜进行表征. XRD测试结果表明, 经过阳极氧化并在350 ℃空气气氛中退火1 h的薄膜中存在锐钛矿晶型的TiO2. XPS的结果表明, 样品中的N元素取代部分O, 且N的摩尔分数为0.95%. SEM显示, 经阳极氧化后薄膜表面出现多孔纳米结构. 光电化学测试结果显示, 阳极氧化提高了N掺杂TiO2薄膜在可见光下的光电响应. 经阳极氧化并热处理的薄膜在0 V电位及可见光照射下光电流密度为2.325 μA·cm-2, 而单纯热处理的薄膜在相同条件下光电流密度仅为0.475 μA·cm-2. 阳极氧化得到纳米多孔结构提高了N掺杂纳米TiO2薄膜的表面积, 从而对可见光的响应增大.     

普鲁士蓝/壳聚糖杂化膜修饰氧化锌球腔阵列/氧化铟锡电极制备及应用

用Langmuir-Blodgett技术制成了附着聚苯乙烯小球的氧化铟锡(InSnO)模板。将此模板水平置于由硝酸锌及柠檬酸组成的前驱体溶胶中,用溶胶-凝胶法制得氧化锌球腔阵列/氧化铟锡电极。采用电沉积法得到普鲁士蓝/壳聚糖杂化膜修饰的氧化锌球腔阵列/氧化铟锡电极。该电极在pH 7.0～8.0的溶液中具有良好的电化学活性,过氧化氢浓度在7.67×10-7～4.72×10-4mol.L-1范围内与相应的电流响应值呈线性关系,检出限(3S/N)为2.4×10-7mol.L-1。测定2.0×10-5mol.L-1过氧化氢溶液时,其相对标准偏差(n=10)为3.8%。     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

溶胶-凝胶法在聚酰亚胺衬底上制备c轴取向ZnO薄膜

通过溶胶-凝胶工艺, 采用两步加热法在聚酰亚胺表面制备了具有c轴取向的ZnO薄膜. 通过差式扫描量热-热重分析(DSC-TGA)得出最佳的前热处理温度和后热处理温度分别为300和390 ℃. 通过X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜的晶体取向和表面形貌进行了分析, 描述了ZnO薄膜在聚酰亚胺上的生长过程. 拉伸实验结果表明, ZnO薄膜与聚酰亚胺衬底有较强的附着力.     

泡沫镍载 NiCO2O4电极的制备及其催化 H2O2电氧化的性能

本文以水热法结合热处理法原位制备了泡沫镍载 NiCo₂O₄纳米线电极,使用XRD、SEM和TEM对合成的 NiCo₂O₄纳米线进行了表征,NiCo₂O₄纳米线直径约80 nm,长度约 3 ~ 5 μm. 使用循环伏安和计时电流法测试了泡沫镍载NiCo₂O₄纳米线催化H₂O₂的电氧化性能,结果表明泡沫镍载NiCo₂O₄纳米线对H₂O₂电氧化有着优良的催化活性、稳定性和传质性能,在0.3 V电位下0.4 mol·L ^-1 H₂O₂和2 mol·L ^-1 NaOH溶液中氧化电流可达380 mA·cm ^-2.     

Preparation, structure and ultraviolet photoluminescence of ZnO films by a novel chemical method

A novel and simple chemical method was developed for the deposition of ZnO films from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction with the chemical bath deposition technology. By this new method, dense and continuous ZnO thin films with good crystallinity can be prepared in a very short time, e.g., in about 20 min. Results show that as-deposited ZnO films on glass and Si (1 0 0) exhibit hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane. With a dense and continuous appearance, the film is composed of ZnO particles in even size of 200-300 nm. The strong and sharp emission at 391 nm and several weak emissions at the wavelength band of 440-500 nm indicate the high optical quality and the stoichiometrical nature of obtained film. Mechanism analysis shows that the reaction duration in hot water and the drying process are vital important factors affecting the deposition process and the crystallization behavior of the film prepared via the aqueous solution route.     

金属有机化学气相沉积法制备ZnO和ZnO∶Ni薄膜及其特性分析

采用金属有机化学气相沉积法制备了ZnO和ZnO∶Ni薄膜,并对它们的结构、光学和电学特性进行了对比研究.通过扫描电子显微镜( SEM)和X射线衍射(XRD)对薄膜的表面形貌和晶体结构进行了分析,结果表明,Ni元素的掺杂虽然降低了薄膜的晶体质量,但并未改变ZnO的纤锌矿结构.通过紫外-可见分光光度计对薄膜的光学特性进行了...     

钛表面二氧化钛膜中氧空位点缺陷传输性能的电化学研究

"钛/TiO2氧化膜/溶液"界面电极体系的电化学性能主要决定于钛表面的TiO2氧化物膜.本文利用多种电化学技术,结合半导体物理的Mott-Schottky分析和Einstein方程,研究了金属钛在1.0mol·L-1HClO4溶液中表面半导体TiO2氧化膜的生长及氧化膜中氧空位点缺陷在外加电场作用下的传输性能,并根据离子性电荷传输与电子性电荷传输对电场变化响应时间之不同特点,确定氧化膜中点缺陷扩散系数.结果表明,电极电位或阳极析氧反应对稳态电流(iss)、氧化膜的阳极化常数(α)、膜中电场强度()、以及膜中氧空位点缺陷的扩散系数(D0)等重要物理化学参数,均有显著影响,并依据氧化膜中的结构变化进行分析.