Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Linearity of the instrumental intensity scale in TOF‐SIMS—a VAMAS interlaboratory study

A VAMAS interlaboratory study involving 21 time‐of‐flight SIMS instruments from nine countries has been conducted to evaluate the linearity of the instrumental intensity scale and procedures for intensity correction. Analysts were supplied, by National Physical Laboratory (NPL), with a protocol for analysis (closely aligned with ISO 23830) together with a reference material of polytetrafluoroethylene (PTFE) tape. The primary ion beam current is varied to provide secondary ion intensities that span the linear to nonlinear regime. The natural carbon isotope ratios ¹²C_xF_y⁺/¹³C¹²C_x?1F_y⁺ for five peaks are used to evaluate the linearity, without a need to measure the ion beam current. A method is given for determining the linearity as a function of secondary ion intensity, with and without dead time correction. It is found that single ion counting statistics is closely obeyed, and the linearity achievable is generally excellent with careful application of dead time correction. Three quarters of instruments in the study achieved better than 95% linearity at a count rate of 0.8 measured counts per pulse, equivalent to 1.6 secondary ions impinging the detector per primary ion pulse. We discuss factors affecting linearity and the precise application of dead time correction and give guidance for practical analysis. This includes suboptimal detector efficiency, inhomogeneous intensities across the rastered area, inadequate charge compensation, and the choice of peak integration limits. The interlaboratory study shows that the method to determine linearity is generally applicable, robust and provides an excellent basis for the development of an ISO standard. © Crown copyright 2011. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 2. Poly(n‐alkyl methacrylates)

Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, facilitating their use in the molecular depth profiling of these polymers by secondary ion mass spectrometry (SIMS). This study is the second in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～90 nm thick spin‐cast poly(methyl methacrylate), poly(n‐butyl methacrylate), poly(n‐octyl methacrylate) and poly(n‐dodecyl methacrylate) films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. The degradation of the poly(n‐alkyl methacrylates) were compared to determine the effect of the length of the alkyl pendant group on their degradation under SF₅⁺ bombardment. The sputter rate and stability of the characteristic secondary ion intensities of these polymers decreased linearly with alkyl pendant group length, suggesting that lengthening the n‐alkyl pendant group resulted in increased loss of the alkyl pendant groups and intra‐ or intermolecular cross‐linking under SF₅⁺ bombardment. These results are partially at variance with the literature on the thermal degradation of these polymers, which suggested that these polymers degrade primarily via depolymerization with minimal intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Development of resonance‐enhanced multiphoton ionization SNMS for state‐selective detection of sputtered atoms under low‐energy ion irradiation

An instrument for a sputtered neutral mass spectrometry with a quadrupole mass spectrometer (QMS) by resonance‐enhanced multiphton ionization method is developed to study sputtered neutrals emission phenomena under ion irradiation in a low‐energy region. We have prepared a pulsed primary ion beam and an ion counting system, and have optimized the operation parameter including a sample bias, energy analyzer voltages, pulsed timing of laser and ion beam, etc. A yield ratio of the lowest‐lying excited state a⁵S₂ to the ground state a⁷S₃ for sputtered Cr atoms has been measured as a function of incident energy of Ar⁺ and O₂⁺ down to 600 eV using a polycrystalline Cr sample. The yield ratio has become a constant value for the Ar⁺ incidence, while it has exponentially increased below 1 keV for the O₂⁺ incidence. It is found that the internal energy distribution of sputtered Cr atoms has been significantly influenced by oxygen density at the surface. Copyright © 2011 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 3. Poly(hydroxyethyl methacrylate) with chemical derivatization

Molecular depth profiling of polymers by secondary ion mass spectrometry (SIMS) has focused on the use of polyatomic primary ions due to their low penetration depth and high damage removal rates in some polymers. This study is the third in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to assess 5 keV SF₅⁺‐induced damage of ～90 nm thick spin‐cast poly(2‐hydroxyethyl methacrylate) (PHEMA) and ～130 nm thick trifluoroacetic anhydride‐derivatized PHEMA (TFAA‐PHEMA) films. The degradation of these polymers under extended SF₅⁺ bombardment (～2 × 10¹⁴ ions cm^?2) was compared to determine the effect of the pendant group chemistry on their degradation. The sputter rate and ion‐induced damage accumulation rate of PHEMA were similar to a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that the addition of a terminal hydroxyl group to the alkyl pendant group does not markedly change the stability of poly(n‐alkyl methacrylates) under SF₅⁺ bombardment. The sputter rate and ion‐induced damage accumulation rate of TFAA‐PHEMA were much higher than a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that derivatization of the terminal hydroxyl group can significantly reduce degradation of the polymer under SF₅⁺ bombardment. This result is in good agreement with the literature on the thermal and radiation‐induced degradation of fluorinated poly(alkyl methacrylates), which suggests that the electron‐withdrawing fluorinated pendant group increases the probability of depolymerization. Copyright © 2004 John Wiley & Sons, Ltd.     

SIMS depth profiling of semiconductor interfaces: Experimental study of depth resolution function

Reconstruction of original element distribution at semiconductor interfaces using experimental SIMS profiles encounters considerable difficulties because of the matrix effect, sputtering rate change at the interface, and also a sputtering‐induced broadening of original distributions. We performed a detailed depth profiling analysis of the Al step‐function distribution in GaAs/Al_xGa_1?xAs heterostructures by using Cs⁺ primary ion beam sputtering and CsM⁺ cluster ion monitoring (where M is the element of interest) to suppress the matrix effect. The experimental Depth Resolution Function (DRF) was obtained by differentiation of the Al step‐function profile and compared with the ‘reference’ DRF found from depth profiling of an Al delta layer. The difference between two experimental DRFs was explained by the sputtering rate change during the interface profiling. We experimentally studied the sputtering rate dependence on the Al_xGa_1?xAs layer composition and applied it for a reconstruction of the DRF found by differentiating the Al step‐function distribution: the ‘reconstructed’ and ‘reference’ DRFs were found to be in good agreement. This confirmed the correctness of the treatment elaborated. Copyright © 2010 John Wiley & Sons, Ltd.     

Organic secondary ion mass spectrometry: Signal enhancement by water vapor injection

The enhancement of the static secondary ion mass spectrometry (SIMS) signals resulting from the injection, closely to the sample surface, of H₂O vapor at relatively high-pressure, was investigated for a set of organic materials. While the ion signals are generally improved with increasing H₂O pressure upon 12 keV Ga⁺ bombardment, a specific enhancement of the protonated ion intensity is clearly demonstrated in each case. For instance, the presence of H₂O vapor induces an enhancement by one order of magnitude of the [M+ H]⁺ static SIMS intensity for the antioxidant Irgafos 168 and a ∼1.5-fold increase for polymers such as poly(vinyl pyrrolidone).     

Repair of defects created by Ar+ sputtering on graphite surface by annealing as confirmed using ToF‐SIMS and XPS

Defects were created on the surface of highly oriented pyrolytic graphite (HOPG) by sputtering with an Ar⁺ ion beam, then characterized using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) at 500°C. In the XPS C1s spectrum of the sputtered HOPG, a sp³ carbon peak appeared at 285.3 eV, representing surface defects. In addition, 2 sets of peaks, the C_x⁻ and C_xH⁻ ion series (where x = 1, 2, 3...), were identified in the ToF‐SIMS negative ion spectrum. In the positive ion spectrum, a series of C_xH₂^+• ions indicating defects was observed. Annealing of the sputtered samples under Ar was conducted at different temperatures. The XPS and ToF‐SIMS spectra of the sputtered HOPG after 800°C annealing were observed to be similar to the spectra of the fresh HOPG. The sp³ carbon peak had disappeared from the C1s spectrum, and the normalized intensities of the C_xH⁻ and C_xH₂^+• ions had decreased. These results indicate that defects created by sputtering on the surface of HOPG can be repaired by high‐temperature annealing.     

Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles

A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar⁺ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar⁺ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar⁺ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.     

Highly Emissive Self‐Trapped Excitons in Fully Inorganic Zero‐Dimensional Tin Halides

The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero‐dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite‐derived zero‐dimensional Sn^II material Cs₄SnBr₆ is presented that exhibits room‐temperature broad‐band photoluminescence centered at 540 nm with a quantum yield (QY) of 15±5 %. A series of analogous compositions following the general formula Cs_4?xA_xSn(Br_1?yI_y)₆ (A=Rb, K; x≤1, y≤1) can be prepared. The emission of these materials ranges from 500 nm to 620 nm with the possibility to compositionally tune the Stokes shift and the self‐trapped exciton emission bands.     

Medium energy ion irradiation of Ge surface – search for a better understanding of the surface nano‐patterning

We report the morphological changes on Ge surfaces upon 50 keV Ar⁺ and 100 keV Kr⁺ beam irradiation at 60° angle of incidence. The Ge surfaces having three different amorphous–crystalline (a/c) interfaces achieved by the pre‐irradiation of 50 keV Ar⁺ beam at 0°, 30° and 60° with a constant fluence of 5 × 10¹⁶ ions/cm² were further processed by the same beam at higher fluences viz. 3 × 10¹⁷, 5 × 10¹⁷, 7 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to understand the mechanism of nano‐scale surface patterning. The Kr⁺ beam irradiation was carried out only on three fresh Ge surfaces with ion fluences of 3 × 10¹⁷, 5 × 10¹⁷ and 9 × 10¹⁷ ions/cm² to compare the influence of projectile mass on surface patterning. Irrespective of the depth of a/c interface, the nanoscale surface patterning was completely missing on Ge surface with Ar⁺ beam irradiation. However, the surface patterning was evidenced upon Kr⁺ beam irradiation with similar ion fluences. The wavelength and the amplitude of the ripples were found to increase with increasing ion fluence. In the paper, the mass redistribution at a/c interface, the incompressible solid flow through amorphous layer, the angular distribution of sputtering/backscattering yields and the generation of non‐uniform stress across the amorphous layer are discussed, particularly in analogy with low energy experiments, to get better understanding of the mechanism of nanoscale surface patterning by the ion beams. Copyright © 2016 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

Improvements in quantification accuracy of inorganic time‐of‐flight secondary ion mass spectrometric analysis of silicate materials by using C60 primary ions

Time‐of‐flight secondary ion mass spectrometry is a very useful tool for the comprehensive characterization of samples by in situ measurements. A pulsed primary ion beam is used to sputter secondary ions from the surface of a sample and these are then recorded by a time‐of‐flight mass spectrometer. The parallel detection of all elements leads to very efficient sample usage allowing the comprehensive analysis of sub‐micrometre sized samples. An inherent problem is accurate quantification of elemental abundances which mainly stems from the so‐called matrix effect. This effect consists of changes in the sputtering and ionization efficiencies of the secondary neutrals and ions due to different sample compositions, different crystal structure or even different crystallographic orientations. Here we present results obtained using C₆₀ molecules as a new primary ion species for inorganic analyses. The results show an improvement in quantification accuracy of elemental abundances, achieving relative errors as small as the certified uncertainties for the analyzed silicate standards. This improvement is probably due to the different sputter mechanism for C primary ions from that for single atomic primary ions such as Ga⁺, Cs⁺ or Ar⁺. The C cluster breaks up on impact, distributing the energy between its constituent carbon atoms. In this way it excavates nano‐craters, rather than knocking out single atoms or molecules from the surface via a collision cascade, leading to a more reproducible sputter process and much improved quantification. Copyright © 2009 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 1. Effect of main chain and pendant methyl groups

Polyatomic primary ions have been applied recently to the depth profiling of organic materials by secondary ion mass spectrometry (SIMS). Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, but the relationship between polymer chemistry and degradation under polyatomic primary ion bombardment has not been studied systematically. In this study, positive and negative ion time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～100 nm thick spin‐cast poly(methyl methacrylate) (PMMA), poly(methyl acrylate) (PMA) and poly(methacrylic acid) (PMAA), films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. These polymers were compared to determine the effect of the main chain and pendant methyl groups on their degradation under SF₅⁺ bombardment. The sputter rate of PMMA was approximately twice that of PMA or PMAA and the rate of damage accumulation was higher for PMA and PMAA than PMMA, suggesting that the main chain and pendant methyl groups played an important role in the degradation of these polymers under SF₅⁺ bombardment. These results are consistent with the literature on the thermal and radiation‐induced degradation of these polymers, which show that removal of the main chain or pendant methyl groups reduces the rate of depolymerization and increases the rate of intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Accurate ultra‐low‐energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1–xN structures using optical conductivity enhancement

Ultra‐low‐energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN–In_xGa_1–xN (x ～0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN–In_xGa_1–xN restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently, unstable and unrepresentative depth profiles tend to be produced. A technique known as optical conductivity enhancement (OCE) has been used during depth profiling to reduce the material resistivity. This creates an electrical path between the sample and holder, eliminating charge build up and resulting in accurate depth profiles. Copyright © 2010 John Wiley & Sons, Ltd.     

Gas‐phase fluorine migration reactions in the radical cations of pentafluorosulfanylbenzene (Aryl―SF5) and benzenesulfonyl fluoride (Aryl―SO2F) derivatives and in the 2,5‐xylylfluoroiodonium ion

The gas‐phase reactions of Aryl―SF₅^·+ and Aryl―SO₂F^·+ have been studied with the electron ionization tandem mass spectrometry. Such reactions involve F‐atom migration from the S‐atom to the aryl group affording the product ion Aryl―F^·+ by subsequent expulsion of SF₄ or SO₂, respectively. Especially, the 4‐pentafluorosulfanylphenyl cation 4‐SF₅C₆H₄⁺ (m/z 203) from 4‐NO₂C₆H₄SF₅^·+ by loss of ·NO₂ could occur multiple F‐atom migration reactions to the product ion C₆H₄F₃⁺ (m/z 133) by loss of SF₂ in the MS/MS process. The gas‐phase reactions of 2,5‐xylylfluoroiodonium (pXyl―I⁺F, m/z 251) have also been studied using the electrospray tandem mass spectrometry, which involve a similar F‐atom migration process from the I‐atom to the aryl group giving the radical cation of 2‐fluoro‐p‐xylene (or its isomer 4‐fluoro‐m‐xylene, m/z 124) by reductive elimination of an iodine atom. All these gas‐phase F‐atom migration reactions from the heteroatom to the aryl group led to the aryl―F coupling product ions with a new formed C_Aryl―F bond. Density functional theory calculations were performed to shed light on the mechanisms of these reactions. Copyright © 2014 John Wiley & Sons, Ltd.     

Secondary‐Ion Mass Spectrometry Images Cardiolipins and Phosphatidylethanolamines at the Subcellular Level

Millions of diverse molecules constituting the lipidome act as important signals within cells. Of these, cardiolipin (CL) and phosphatidylethanolamine (PE) participate in apoptosis and ferroptosis, respectively. Their subcellular distribution is largely unknown. Imaging mass spectrometry is capable of deciphering the spatial distribution of multiple lipids at subcellular levels. Here we report the development of a unique 70 keV gas‐cluster ion beam that consists of (CO₂)_n⁺(n>10 000) projectiles. Coupled with direct current beam buncher‐time‐of‐flight secondary‐ion mass spectrometry, it is optimized for sensitivity towards high‐mass species (up to m/z 3000) at high spatial resolution (1 μm). In combination with immunohistochemistry, phospholipids, including PE and CL, have been assessed in subcellular compartments of mouse hippocampal neuronal cells and rat brain tissue.     

Ion beam induced emissions from solid europium compounds

Impact of energetic heavy particles on europium compound surfaces gives rise to radiative optical emission from reflected and sputtered particles and from the excited states of the solid compounds. In the present paper we discuss the optical spectrum and the sputtered secondary ion mass spectrum observed when solid europium oxide (Eu₂O₃) and europium chloride (EuCl₃) are bombarded with 90 keV Ar⁺ ions from an ion accelerator. We observe the reduction reaction in solid europium chloride (EuCl₃) by bombardment with a 20 A/cm² beam of 90 keV Ar⁺ ions.