Highly Emissive Self‐Trapped Excitons in Fully Inorganic Zero‐Dimensional Tin Halides |
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| Authors: | Viktoriia Morad Dr Michael Wörle Dr Sergii Yakunin Dr Gabriele Rainò Olga Nazarenko Markus Fischer Dr Ivan Infante Prof Dr Maksym V Kovalenko |
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| Institution: | 1. Laboratory of Inorganic Chemistry, ETH Zürich, Zürich, Switzerland;2. Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials, Dübendorf, Switzerland;3. Department of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, HV, Amsterdam, The Netherlands |
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| Abstract: | The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero‐dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite‐derived zero‐dimensional SnII material Cs4SnBr6 is presented that exhibits room‐temperature broad‐band photoluminescence centered at 540 nm with a quantum yield (QY) of 15±5 %. A series of analogous compositions following the general formula Cs4?xAxSn(Br1?yIy)6 (A=Rb, K; x≤1, y≤1) can be prepared. The emission of these materials ranges from 500 nm to 620 nm with the possibility to compositionally tune the Stokes shift and the self‐trapped exciton emission bands. |
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| Keywords: | luminescence perovskites self-trapped excitons solid-state synthesis tin |
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