Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

The base--collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collector--base bias--and shows a kink as the reverse collector--base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.     

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor(HBT) on thin film silicon-on-insulator(SOI) is obtained with the substrate bias effects being considered.The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias,which is quite different from that of a conventional bulk HBT.The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.     

应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究

在绝缘层附着硅(SOI)结构的Si膜上生长SiGe合金制作具有SiGe量子阱沟道的SOI p型金属氧化物半导体场效应晶体管(PMOSFET)，该器件不仅具有SOI结构的优点，而且因量子阱中载流子迁移率高，所以进一步提高了器件的性能.在分析常规的Si SOI MOSFET基础上，建立了应变SiGe SOI 量子阱沟道PMOSFET的阈值电压模型和电流-电压(I-V)特性模型，利用Matlab对该结构器件的I-V特性、跨导及漏导特性进行了模拟分析，且与常规结构的器件作了对比.模拟结果表明，应变SiGe SOI量子阱沟道PMOSFET的性能均比常规结构的器件有大幅度提高. 关键词： 应变SiGe SOI MOSFET 阈值电压 模型     

SOI部分耗尽SiGe HBT集电结空间电荷区模型

SOI上的薄膜异质SiGe晶体管通过采用"折叠"集电极,已成功实现SOI上CMOS与HBT的兼容.本文结合SOI薄膜上的纵向SiGe HBT结构模型,提出了包含纵向、横向欧姆电阻和耗尽电容的"部分耗尽 (partially depleted) 晶体管"集电区简化电路模型.基于器件物理及实际考虑,系统建立了外延集电层电场、电势、耗尽宽度模型,并根据该模型对不同器件结构参数进行分析.结果表明,空间电荷区表现为本征集电结耗尽与MOS电容耗尽,空间电荷区宽度随集电结掺杂浓度减小而增大,随集电结反偏电压提高而增大, 关键词： SOI SiGe HBT 集电区 空间电荷区模型     

Visible nonlinear band-edge luminescence in ZnSe and CdS excited by a mid-infrared free-electron laser

Visible nonlinear band-edge luminescence in ZnSe and CdS bulk crystals was observed upon excitation by a mid-infrared free-electron laser (mid-IR FEL) at approximately 9 mm. The emission intensity is proportional to the 74th and 45th powers of the excitation intensity for ZnSe and CdS, respectively. For ZnSe, the temporal profile of the emission intensity does not follow the profile of the excitation macropulse of the FEL, but sharply rises and decays only at the maximum of the macropulse profile. These features are in marked contrast to those of a previous report, where the emission profile follows that of the macropulse, and the emission intensity scales with the 4th power of the excitation intensity. The experimental observations were reproduced by a numerical simulation based on impact ionization and avalanche ionization by electrons accelerated by the optical electric field of the FEL. The large nonlinearity in the bandedge emission comes from the macropulse temporal structure, which consists of micropulses densely spaced to allow excited carriers to survive when the next micropulse arrives. They work as seed carriers in the next carrier multiplication step.     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

Analysis of avalanche mechanisms in short-pulses laser-induced damage

A theory based on the rate equation of free electron is used to analyze the process of free electron multiplication in optical materials under the laser irradiation, specially researching on the effect of avalanche ionization on the electron multiplication and material damage threshold. Numerical investigation with SiO₂ is processed using this theoretical model, and damage thresholds under different avalanche models are analyzed. The result shows that during research on the energy charge between electron and electromagnetic field, the probability of avalanche ionization should be considered. Under this assumption, the numerical threshold gets well with the experimental result.     

An improved design for Al Ga N solar-blind avalanche photodiodes with enhanced avalanche ionization

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode(APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al_(0.3)Ga_(0.7)N/Al_(0.45)Ga_(0.55)N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al_(0.3)Ga_(0.7)N which has about a six times higher hole ionization coefficient than the high-Al-content Al_(0.45)Ga_(0.55)N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.     

薄膜SOI上SiGe HBT集电结耗尽电荷和电容改进模型

文章研究了SOI衬底上SiGe npn异质结晶体管集电结耗尽电荷和电容.根据器件实际工作情况,基于课题组前面的工作,对耗尽电荷和电容模型进行扩展和优化.研究结果表明,耗尽电荷模型具有更好的光滑性;耗尽电容模型为纵向耗尽与横向耗尽电容的串联,考虑了不同电流流动面积,与常规器件相比,SOI器件全耗尽工作模式下表现出更小的集电结耗尽电容,因此更大的正向Early电压;在纵向工作模式到横向工作模式转变的电压偏置点,耗尽电荷和电容的变化趋势发生改变.SOI薄膜上纵向SiGe HBT集电结耗尽电荷和电容模型的建立和扩展为毫米波SOI BiCMOS工艺中双极器件核心参数如Early电压、特征频率等的设计提供了有价值的参考. 关键词： 耗尽电容 SiGe HBT SOI     

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

The stress effect of SiGe pMOSFETs has been investigated to understand the electrical properties of devices fabricated on the Si bulk and PD SOI substrates. A comparison of the drain saturation current (I_D.sat) and maximum transconductance (g_m,max) in both the SiGe bulk and the SiGe PD SOI devices clearly shows that the SiGe PD SOI is more immune from hot-carriers than the SiGe bulk. The stress-induced leakage current (SILC) is hardly detectable in ultra-thin oxide, because the increasing contribution of direct tunneling is comparable to the trap-assisted component. The SiGe PD SOI revealed degraded properties being mainly associated with the detrimental silicon-oxide interface states of the SOI structure.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

电荷载流子倍增寄存器中的倍增噪声

信号电荷在电荷载流子倍增寄存器中的强场下,吸收电场能量激发碰撞电离过程。电子碰撞电离过程激发的电子-空穴对具有独立性和随机性,其激发过程产生的倍增噪声主要是散粒噪声。借助于马尔可夫链定理,得到了CCM单元的倍增因子的计算方法,建立了电子碰撞电离的数学模型。在此基础上,推导了CCM单元倍增噪声的功率谱密度,表明其与倍增因子相关。     

The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μ m thick thin-layer SOI.     

Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to agree well with the reports of other theoretical predictions and experimental results published in literatures.     

Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

The SiGe-on-insulator (SGOI) materials were obtained by thermal oxidation of SiGe layers on SOI wafers. As a comparison, H ions were implanted into SiGe layer of some samples before oxidation. The high degree relaxed SGOI materials with high Ge fraction were fabricated by two kinds of samples, including the samples without and with H ions implantation, and relaxation degree of SiGe layers is above 93%. The different result is that implantation of H ions decreased the oxidation rate of SiGe layer and decreased the loss of Ge in SiGe layer during oxidation. The effect of implantation of H ions is discussed in the paper.     

Epitaxial growth of fully relaxed Si0.75Ge0.25 on SOI substrate

A fully relaxed Si_0.75Ge_0.25 film with low dislocation densities is fabricated by epitaxial growth on SOI substrate without depositing graded buffers. The relaxation mechanism of the SiGe layer directly grown on SOI substrate is also analyzed. For SiGe grown on SOI with low Ge content, the strain is redistributed between SiGe and the top Si of SOI substrate, and the strain residing in SiGe layer can be fully relaxed by the formation and expansion of dislocation half-loops near the SiGe/Si interface. The surface morphology and crystal quality of all samples are analyzed by optical microscopy and transmission electron microscopy (TEM), respectively. Compared to the Si_0.75Ge_0.25 layer epitaxially grown on graded buffer, the Si_0.75Ge_0.25 directly grown on SOI substrate appears good surface morphology and perfect crystal quality.     

蒙特卡罗方法模拟薄膜电致发光器件中碰撞离化的作用

基于经验赝势法得到的能带结构数据，采用分段多项式拟合获得ZnS能带结构的解析表达式 ，建立解析能带模型.使用建立的模型计算得到各能谷的态密度和总的散射速率,并与文献 的计算结果进行了对比，验证该解析能带模型既具有非抛物型多能谷能带模型运算速度快、 使用方便的优势,又具有与采用全导带模型相近的计算精度.进一步利用该模型进行蒙特卡罗 模拟，得到第一导带和第二导带中电子数随电场强度的变化、不同电场中能量分布函数以及 包含与不包含碰撞离化情况下电子能量随时间变化的曲线.讨论在外加电场下，电子在导带 内各个能谷间和 关键词： 蒙特卡罗模拟 解析能带模型 多项式拟合 碰撞离化     

Mechanism for the streamer propagation toward the anode and cathode due to background electron multiplication

A simple mechanism for the propagation of an ionization wave in a dense gas due to the multiplication of background electrons in a nonuniform electric field is proposed. The mechanism does not depend on the sign of the field projection onto the streamer propagation direction. The streamer propagation is caused by the enhancement of the electric field at the streamer head. It is shown that, in a prebreakdown field, the intense multiplication of electrons takes place in both electropositive and electronegative gases. The prebreakdown multiplication can provide a fairly high density of background electrons; this allows one to treat the background as a continuous medium when considering streamer propagation as a multiplication wave. The initial ionization is enabled by the natural background of ionizing radiation and cosmic rays. An analytical expression for the velocity of the ionization front is obtained based on a simple equation for the multiplication of background electrons. This expression is in good agreement with numerical simulations performed within both a simple model of background electron multiplication and a more comprehensive drift-diffusion model. In particular, the drift-diffusion model predicts the propagation of the ionization front from a small-radius anode to the cathode due to the multiplication of background electrons. The velocity of the ionization wave front is calculated as a function of the electric field at the streamer head for helium, xenon, nitrogen, and sulfur hexafluoride. It is shown that some features of streamer propagation (e.g., its jerky motion) can be related to the recently found nonmonotonic dependence of ionization frequency on the electric field.     

Random response time of thin avalanche photodiodes

The avalanche built-up time using random response time model for avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers exit the multiplication region. The dead-space effect is included in our model to demonstrate its effect on response time of APDs especially for the thin devices. Our results show that feedback impact ionisation process and dead-space prolong the response time in APDs. The time response of homojunction InP p⁺-i-n⁺ diodes with the multiplication region of 0.281, 0.582 and 1.243 m are calculated.