Improvement of photoemission performance of a gradient-doping transmission-mode GaAs photocathode

Two types of transmission-mode GaAs photocathodes grown by molecular beam epitaxy are compared in terms of activation process and spectral response, one has a gradient-doping structure and the other has a uniform-doping structure. The experimental results show that the gradient-doping photocathode can obtain a higher photoemission capability than the uniform-doping one. As a result of the downward graded band-bending structure, the cathode performance parameters, such as the electron average diffusion length and the surface electron escape probability obtained by fitting quantum yield curves, are greater for the gradient-doping photocathode. The electron diffusion length is within a range of from 2.0 to 5.4 μm for doping concentration varying from 10¹⁹ to 10¹⁸ cm^-3 and the electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm.     

Frequency response range of terahertz pulse coherent detection based on THz-induced time-resolved luminescence quenching

It has been proposed previously that the coherent detection of a terahertz(THz) pulse can be achieved based on the time-resolved luminescence quenching. In this paper, we investigate the frequency response range of this novel detection technology by simulating the motion of carriers in gallium arsenide(GaAs) by the ensemble Monte Carlo method. At room temperature, for a direct-current(DC) voltage of 20 kV/cm applied to the semiconductor(GaAs) and sampling time o140 fs, the luminescence quenching phenomena induced by terahertz pulses with different center frequencies are studied The results show that the quenching efficiency is independent of the THz frequency when the frequency is in a range o0.1 THz–4 THz. However, when the frequency exceeds 4 THz, the efficiency decreases with the increase of frequency Therefore, the frequency response range is 0.1 THz–4 THz. Moreover, when the sampling time is changed to 100 fs the frequency response range is extended to be approximately 0.1 THz–5.6 THz. This study of the frequency-dependen characteristics of the luminescence response to the THz pulse can provide a theoretical basis for the exploration of THz detection technology.     

Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy

The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420~μ A/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy (MBE) growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1× 10^19~cm^-3 to 1×10^18~cm^-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition, by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaAlAs causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.     

In-situ multi-information measurement system for preparing gallium nitride photocathode

We introduce the first domestic in-situ multi-information measurement system for a gallium nitride (GaN) photo- cathode. This system can successfully fulfill heat cleaning and activation for GaN in an ultrahigh vacuum environment and produce a GaN photocathode with a negative electron affinity (NEA) status. Information including the heat clean- ing temperature, vacuum degree, photocurrent, electric current of cesium source, oxygen source, and the most important information about the spectral response, or equivalently, the quantum efficiency (QE) can be obtained during prepa- ration. The preparation of a GaN photocathode with this system indicates that the optimal heating temperature in a vacuum is about 700 C. We also develop a method of quickly evaluating the atomically clean surface with the vacuum degree versus wavelength curve to prevent possible secondary contamination when the atomic level cleaning surface is tested with X-ray photoelectron spectroscopy. The photocurrent shows a quick enhancement when the current ratio between the cesium source and oxygen source is 1.025. The spectral response of the GaN photocathode is flat in a wavelength range from 240 nm to 365 nm, and an abrupt decline is observed at 365 nm, which demonstrates that with the in-situ multi-information measurement system the NEA GaN photocathode can be successfully prepared.     

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future.     

Transmission-mode GaN photocathode based on graded Al_xGa_(1-x)N buffer layer

We create a GaN photocathode based on graded Alx Ga1-x N buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes.A gateshaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained.Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones.The fitted interface recombination velocity is 5×104 cm/s,with negligible magnitude,proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer.     

Laser-based transfection with conjugated gold nanoparticles

The irradiation of ceils combined with the immunoconjugate of gold nanoparticles by the short pulse laser can make the plasma membrane be transiently permeabilized, which can be used to transfer exogenous molecules into the cells. We explore this technique as a novel gene transfection method for floating cells. Three different floating cells exposed to the laser are selectively transfected with fluorescein isothiocyanatedextran, antibody, and green fluorescent protein （GFP） coding plasmids, and the viability of cells are determined by propidium iodide. For fluorescein isothiocyanate-dextran, the best transfection efficiency of 65% is obtained; for the antibody, it is 74%; whereas for the green fluorescent protein coding plasmids, a very small transfection efficiency is gained. If the transfection efficiency is improved, gold nanoparticles will be very useful as mediator for gene transfection in living cells.     

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Four 4H-SiCp–i–n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated.Single photon detection efficiency(SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling.Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate(DCR) confirms that the trap-assisted tunneling(TAT) process is the main source of DCR.The temperature coefficient ranges from-2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers.Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.     

Photon bunching and anti-bunching with two dipole-coupled atoms in an optical cavity

We investigate the effect of the dipole–dipole interaction(DDI) on the photon statistics with two atoms trapped in an optical cavity driven by a laser field and subjected to cooperative emission. By means of the quantum trajectory analysis and the second-order correlation functions, we show that the photon statistics of the cavity transmission can be flexibly modulated by the DDI while the incoming coherent laser selectively excites the atom–cavity system's nonlinear Jaynes–Cummings ladder of excited states. Finally, we find that the effect of the cooperatively atomic emission can also be revealed by the numerical simulations and can be explained with a simplified picture. The DDI induced nonlinearity gives rise to highly nonclassical photon emission from the cavity that is significant for quantum information processing and quantum communication.     

Photodynamics of Ga_(Zn)–V_(Zn) complex defect in Ga-doped ZnO

The wide-band-gap II–VI compound semiconductor ZnO is regarded as a promising single-photon emission(SPE)host material. In this work, we demonstrate that a(GaZn–VZn)-complex defect can readily be obtained and the density can be controlled in a certain range. In analogy to nitrogen vacancy centers, such a defect in ZnO is expected to be a new single photon source. The optical properties of the(GaZn–VZn)-complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements. The electron transitions between the defect levels emit light at ～ 650 nm with a lifetime of 10–20 nanoseconds, indicating a good coherent length for SPE. Finally, a two-level emitter structure is proposed to explain the carrier dynamics. We believe that the photodynamics study of the(GaZn–VZn)-complex defect in this work is important for ZnO-based quantum emitters.     

Research on quantum efficiency of transmission-mode InGaAs photocathode

To investigate the quantum efficiency of high performance transmission-mode InGaAs photocathode, the quantum efficiency curve is fitted by using the multilayer optical thin film theory and the first principle calculation. A series of the performance parameters are obtained with the relative error less than 5%. It indicates that the thickness of the emission layer is 0.7–0.9 μm, the thickness of the window layer is 0.1–0.3 μm. Meanwhile the results from the first principle calculation are proved to be reliable as well. In addition, the long-wave response will increase and the highest integral sensitivity will be obtained when the thickness of the emission layer is the optimum value. For the InGaAs photocathode, the back interface recombination velocity mainly leads to the low integral sensitivity, which is caused by the material lattice mismatch.     

Structural Design and Experiment of Narrow-Band Response GaAlAs Photocathodes

To obtain the peak response at 532 nm,narrow-band response GaAlAs photocathodes with two GaAlAs active layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency.The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition.The results indicate that the peak response and the cut-off wavelength occur at 532 nm for the two kinds of photocathodes respectively.The response of the reflection-mode photocathode is an order of magnitude higher than that of the transmission-mode photocathode,whereas the better growth quality and the thicker second GaAlAs active layer can improve the transmission-mode response.     

NEA GaN光电阴极量子产额研究

围绕NEA GaN光电阴极光电发射过程的光谱响应理论,研究了其量子产额问题。分别给出了反射模式和透射模式NEA GaN光电阴极的量子产额计算公式,分析了影响量子产额的因素。分析了国外制备的反射模式和透射模式NEA GaN光电阴极的量子产额曲线。结果表明,目前制备的NEA GaN光电阴极已具有高达30%的量子效率和良好的发射性能。相同条件下,反射模式比透射模式的量子效率要高,而且反射模式不像透射模式那样存在短波限制。     

透射式指数掺杂GaAs光电阴极最佳厚度研究

通过研究指数掺杂GaAs光电阴极中光电子扩散漂移长度与均匀掺杂GaAs光电阴极中光电子扩散长度的差异,确定透射式指数掺杂GaAs光电阴极的最佳厚度范围为16—22 μm.利用量子效率公式对透射式指数掺杂GaAs光电阴极最佳厚度进行了仿真分析,发现厚度为20 μm时阴极积分灵敏度最大.外延生长阴极厚度分别为16和20 μm的两种透射式指数掺杂GaAs样品并进行了激活实验,测得样品的积分灵敏度分别为1228和1547 μA/lm,两者的比值为796%. 实验结果与仿真结果符合. 关键词： GaAs光电阴极 透射式 指数掺杂 厚度     

指数掺杂结构对透射式GaAs光电阴极量子效率的影响研究

通过在一维连续性方程光电子产生函数项中加入短波约束因子,修正了指数掺杂和均匀掺杂透射式GaAs光电阴极量子效率公式.利用修正的透射式阴极量子效率公式分别拟合制备的指数掺杂和均匀掺杂透射式阴极量子效率实验曲线,符合得很好.另外拟合得到的阴极性能参数表明,由于内建电场的作用,指数掺杂阴极的性能要好于均匀掺杂阴极,指数掺杂结构能够明显提高透射式阴极的量子效率. 关键词： 透射式光电阴极 指数掺杂 量子效率 内建电场     

高性能透射式GaAs光电阴极量子效率拟合与结构研究

为了探索高性能透射式GaAs光电阴极的特征结构,对光电阴极量子效率公式进行了光谱反射率与短波截止限的修正,并利用修正后的公式对ITT透射式GaAs光电阴极量子效率(≈43%)曲线进行了拟合,得到拟合相对误差小于5%时的结构参数为:窗口层Ga_1-xAl_xAs的厚度介于0.3-0.5 μm,Al组分x值为0.7,发射层GaAs的厚度介于1.1-1.4 μm.另外,根据拟合结果讨论了均匀掺杂透射式GaAs光电阴极的优化结构参数,如果光电阴极具有0.4 μm厚的Ga_1-xAl_xAs(x=0.7)窗口层和1.1-1.5 μm厚的GaAs发射层,则积分灵敏度可以达到2350 μA/lm以上. 关键词： 透射式GaAs光电阴极 量子效率 积分灵敏度 光学性能     

透射式蓝延伸GaAs光电阴极的光电发射特性研究

利用计算光学性能、量子效率和积分灵敏度的理论模型,分别研究比较了我国和ITT典型透射式蓝延伸GaAs光阴极的光电发射特性,包括阴极的光学性质和性能参数。结果表明我国的透射式蓝延伸光阴极积分灵敏度已经达到2 100μA.lm-1,但与ITT的2 750μA.lm-1相比还存在一定的差距。分析的主要原因是一方面是GaAlAs窗口层的厚度和Al组分大小对于短波响应,特别是对蓝延伸起着决定的作用;另一方面阴极性能参数电子扩散长度和后界面复合速率的大小对长波响应和短波响应也有着重要的影响,这些因素都受制于基础工业制造水平的落后。     

近紫外波段NEA GaN阴极响应特性的研究

为了深入理解近紫外波段NEA GaN阴极的光谱响应特性, 在超高真空系统中对MOCVD生长的不同发射层厚度和掺杂浓度的三个样品进行激活实验, 并在线测试样品光谱响应. 利用反射式GaN阴极量子效率公式和最小二乘法对入射光波长为0.25—0.35 μ之间的 阴极响应量子效率实验数据进行拟合, 分别得到后界面复合速率和拟合直线L的斜率, 并使用量子效率公式对入射光波长为0.35 μ时的反射式GaN阴极光谱响应量子效率进行仿真. 结果表明, 后界面复合速率和直线v的斜率都能很好地反映GaN阴极的响应性能, 当GaN阴极后界面复合速率小于10⁵ cm/s, 发射层的厚度取0.174—0.212 μ时, 阴极光谱响应性能最好. 关键词： 反射式GaN 势垒 最小二乘法 后界面缺陷     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.