Birefringence in YA1O3∶Nd between 2–4·7 eV

The paper presents original spectra of the birefringence of the orthorhombic YAlO₃Nd single crystal in the region from 2 to 4·7 eV, describes a reflection method of null ellipsometry which was used for the measurement of the spectra and, in conclusion, makes a comparison between the measured spectra and the values predicted from the values measured over the region of lower energies 1·1 – 2·2 eV.The authors are grateful to J. Kvapil for samples preparation.     

Chalcogen bonds tuned by an N–H···π or C–H···π interaction: investigation of substituent,cooperativity and solvent effects

In the present work, ab-initio calculations are performed to investigate cooperativity effects between chalcogen bond and H···π interactions in XHY···NCH···C₆H₆ and XHY···CNH···C₆H₆ complexes, where X = F, Cl, Br, CN, NC, and Y = S, Se. The nature of these interactions and the mechanism of cooperativity are studied by means of quantum theory of atoms in molecules, noncovalent interaction index, many-body analysis of interaction energy and electron density shift analysis. For each ternary complex, the shortening of the Y···N(C) distance is more pronounced than that of the H···π. The cooperative energies of these complexes are all negative which demonstrate a positive cooperativity between the Y···N(C) and H···π interactions. The many-body analysis of interaction energy reveals that the two-body energy term has the largest contribution to the total interaction energies of ternary complexes. A good linear correlation is established between the three-body energy and cooperative energy values in the ternary systems. The cooperative energies of XHY···CNH···C₆H₆ complexes indicate a larger sensitivity on the polarity of solvent than XHY···NCH···C₆H₆ ones.     

Comprehensive study of a 4H–SiC MES–MOSFET

In this paper, we studied the enhancement of the breakdown voltage in the 4H–SiC MESFET–MOSFET (MES–MOSFET) structure which we have proposed in our previous work. We compared this structure with Conventional Bulk-MOSFET (CB-MOSFET) and Field plated Conventional Bulk-MOSFET (FCB-MOSFET) structures. The 4H–SiC MES–MOSFET structure consists of two additional schottky buried gates which behave like a Metal on Semiconductor (MES) at the interface of the active region and substrate. The motivation for this structure was to enhance the breakdown voltage by introducing a new technique of utilizing the reduced surface field (RESURF) concept. In our comparison and investigation we used a two-dimensional device simulator. Our simulation results show that the breakdown voltage of the proposed structure is 3.7 and 2.9 times larger than CB-MOSFET and FCB-MOSFET structures, respectively. We also showed that the threshold voltage and the slope of drain current (I_D) as a function of drain–source voltage (V_DS) for all the structures is the same.     

On difference of properties between organic fluorine hydrogen bond C–H···F–C and conventional hydrogen bond

The existence of C–H···F–C hydrogen bonds in the complexes of trifluoromethane and cyclic molecule (oxirane, cyclobutanone, dioxane, and pyridine) has been experimentally proven by Caminati and co-workers. This study presents a theoretical investigation on these C–H···F–C hydrogen bonds at B97D/6-311++G^** and MP2/6-311++G^** levels, in terms of C–H vibrational frequency shifts, atoms in molecules characteristics, and the bonding feature of C–H···F–C hydrogen bonds. It is found that in three important aspects, there are significant differences in properties between C–H···F–C and conventional hydrogen bonds. The C–H···F–C hydrogen bonds show a blueshift in the C–H vibrational frequencies, instead of the X–H normal redshift in X–H···Y conventional hydrogen bonds. The natural bond orbital (NBO) analyses show that σ and p types of lone pair orbitals of the F atom to an antibonding σ^*_H–C orbital form a dual C–H···F–C hydrogen bond. Such a dual hydrogen bonding leads to the proton acceptor directionality of the C–H···F–C hydrogen bond softer. Our studies also show that the Laplacian of the electron density (▽²ρ_BCP) is not always a good criterion for hydrogen bonds. Therefore, we should not recommend the use of the Laplacian of the electron density as a criterion for C–H···F–C hydrogen bonds.     

A sensitive 3–4-mm radiometer

Improving the parameters of the Schottky barrier mixing diodes has permitted us to improve the sensitivity of the 3–4-mm radiometer described in [1]. The authors were able to achieve a fluctuation sensitivity of no worse than 0.15K for double-sideband reception with an output RC filter time constant of =1 sec by using, with several changes, the high-frequency part of this receiver. The sensitivity reached 0.1K at several points in the 3–4-mm range. Figure 1 shows a calibration record of a standard load, cooled in liquid nitrogen. The amplification while recording the noise was 30 times greater than for the calibration signal.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 21, No. 11, pp. 1702–1703, November, 1978.     

Strictly non-blocking 4×4 silicon electro–optic switch matrix

The first path-independent insertion-loss(PILOSS) strictly non-blocking 4×4 silicon electro–optic switch matrix is reported. The footprint of this switch matrix is only 4.6 mm×1.0 mm. Using single-arm modulation, the crosstalk measured in this test is-13 d B ～-27 d B. And a maximum crosstalk deterioration of 6d B caused by two-path interference is also found.     

Ternary LiBH4–MgH2–NaAlH4 hydride confined into nanoporous carbon host for reversible hydrogen storage

Ternary hydride of LiBH₄–MgH₂–NaAlH₄ confined into carbo n aerogel scaffold (CAS) via melt infiltration for reversible hydrogen storage is proposed. Nanoconfinement of hydrides into CAS is obtained together with surface occupation of some phases, such as Al and/or LiH. Regarding nanoconfinement, not only multiple-step decomposition of LiBH₄–MgH₂–NaAlH₄ hydride reduces to about single step, but also reduction of dehydrogenation temperature is significantly observed, for example, ∆T up to 70 °C regarding last dehydrogenation step. Moreover, decomposition of NaBH₄ in nanoconfined sample can be done at 360 °C (dehydrogenation temperature in this study), which is 115 and 180 °C lower than that of NaBH₄ in milled LiBH₄–MgH₂–NaAlH₄ and bulk NaBH₄, respectively. The reaction of LiBH₄+NaAlH₄→LiAlH₄+NaBH₄ takes place during nanoconfinement and the decomposition of LiAlH₄ is observed, resulting deficient hydrogen content liberated. However, hydrogen content released (1st cycle) and reproduced (2nd–4th cycles) from this ternary hydride enhances up to 11% and 22% of full hydrogen storage capacity due to nanoconfinement. After rehydrogenation (T=360 °C and P(H₂)=50 bar H₂ for 12 h), NaBH₄, MgH₂, and Li₃AlH₆ are reversible, whereas Li₃AlH₆ and NaBH₄ in milled sample cannot be recovered due to deficient hydrogen pressure (T=360 °C and P(H₂)=80 bar) and probably evaporation of molten sodium during dehydrogenation, respectively. The latter results in inferior hydrogen content reproduced from milled sample to nanoconfined sample.     

Spectral structure of barium–phosphate–silicate phosphor Ba10(PO4)4(SiO4)2:EuM+

The new apatite–silicate phosphor doped with Eu ions in Ba₁₀(PO₄)₄(SiO₄)₂ matrix was synthesized through solid-state reaction. It was found that the as-synthesized phosphor displayed apparent mixture of band and line emission peaks giving rise to pseudo white light. The narrow emission bands peaking at 410 nm can be assigned to the 4f⁶5d→4f⁷(⁸S_7/2) transition of Eu²⁺ ions, and the other band at 507 nm is ascribed to anomalous fluorescent emission. One group of line emission peaking at 595 nm and 613 m were due to the ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ions. The occurrence of photostimulated luminescence and discrete emission lines in violet (410 nm), green (507 nm) and red (595 nm and 613 nm) colors indicate that this material has potential application in fields of white-light-emitting.     

Effect of Hydrogen on Young’s Modulus and Internal Friction of V–4Ti–4Cr Alloy

Physics of the Solid State - We studied Young’s modulus and internal friction of the V–4Ti–4Cr alloy with different hydrogen impurity concentrations in the temperature range of...     

Radiative Characteristics of Xe2Cl* Molecules under High-Energy Electron Pumping of Xe–CCl4 and Ar–Xe–CCl4 Gas Mixtures with a Low CCl4 Content

Optics and Spectroscopy - Spontaneous and stimulated emissions of Xe2Cl* triplex molecules upon excitation of Xe–CCl4 gas mixtures with a low CCl4 content by a pulsed high-energy electron...     

Strain behavior of the hydrogenated submicrocrystalline Ti–6Al–4V alloy

Comparative studies of the influence of 0.002–0.12 mass % hydrogenation on the structure and phase composition of the submicrocrystalline and coarse-grained Ti–6Al–4 V alloys are performed. The evolution of the strain processes in the hydrogenated alloy is studied for both alloys upon tension at a temperature of 293 K depending on the hydrogen content and alloy state. It is established that the presence of hydrogen in the nanostructured Ti–6Al–4 V alloy in the solid solution leads to a decrease of its yield stress and an increase of its tensile strength and total strain before failure. The possible reasons for the increased duration of the uniform strain stage and the effect of strain hardening of the alloy in the presence of hydrogen in the solid solution are discussed.     

Electrical properties of a solid polymeric electrolyte of PVC–ZnO–LiClO4

The ZnO filler has been introduced into a solid polymeric electrolyte of polyvinyl chloride (PVC)–ZnO–LiClO₄, replacing costly organic filler for conductivity improvement. Ionic conductivity of PVC–ZnO–LiClO₄ as a function of ZnO concentration and temperature has been studied. The electrolyte samples were prepared by solution casting technique. The ionic conductivity was measured using impedance spectroscopy technique. It was observed that the conductivity of the electrolyte varies with ZnO concentration and temperature. The temperature dependence on the conductivity of electrolyte was modelled by Arrhenius and Vogel–Tammann–Fulcher equations, respectively. The temperature dependence on the conductivity does not fit in both models. The highest room temperature conductivity of the electrolyte of 3.7 × 10⁻⁷ Scm⁻¹ was obtained at 20% by weight of ZnO and that without ZnO filler was found to be 8.8 × 10⁻¹⁰ Scm⁻¹. The conductivity has been improved by 420 times when the ZnO filler was introduced into the PVC–LiClO₄ electrolyte system. It was also found that the glass transition temperature of the electrolyte PVC–ZnO–LiClO₄ is about the same as PVC–LiClO₄. The increase in conductivity of the electrolyte with the ZnO filler was explained in terms of its surface morphology.     

Ultrasonic cavitation erosion of gas nitrided Ti–6Al–4V alloys

Ultrasonic cavitation erosion experiments were performed on Ti–6Al–4V alloys samples in annealed, nitrided and nitrided and subsequently heat treated state. The protective oxide layer formed as a result of annealing and heat treatment after nitriding is eliminated after less than 30 min cavitation time, while the nitride layer lasts up to 90 min cavitation time. Once the protective layer is removed, the cavitation process develops by grain boundary erosion, leading to the expulsion of grains from the surface. The gas nitrided Ti–6Al–4V alloy, forming a Ti_xN surface layer, proved to be a better solution to improve the cavitation erosion resistance, compared to the annealed and nitrided and heat treated state, respectively. The analysis of the mean depth of erosion rate at 165 min cavitation time showed an improvement of the cavitation erosion resistance of the nitrided samples of up to 77% higher compared to the one of the annealed samples.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

Glass formation in the system Li2B4O7–Pb3O4–CuO using X-ray diffraction

X-ray diffraction was performed to construct the phase diagram for the ternary Li₂B₄O₇–Pb₃O₄–CuO glass system. Three principal regions were identified: (1) a glass-forming region observed at the composition (75 < Li₂B₄O₇ < 100) mol%, (0 < CuO < 35) mol% and (0 < Pb₃O₄ < 70) mol% in the ternary system, and (100 ? x) mol% Li₂B₄O₇–x mol% Pb₃O₄ where x = 0 up to 70, (100 ? y) mol% Li₂B₄O₇–y mol% CuO where y = 0 up to 25 in the binary system;. (2) a crystalline region: all compositions prepared from the binary system Pb₃O₄–CuO and the ternary system containing Li₂B₄O₇ up to 60 mol%; (3) a partially crystalline region formed between the glass and crystalline regions.     

Creep behaviour of Zr + 4·5%Sn + 1%Mo in 300 K–750K temperature range

Measurements of the Young modulus normalized yield stress and the stress sensitivity parameter in creep of the Zr + 4·5% Sn + 1% Mo alloy in the temperature interval 300 K –750 K are presented. It is shown that there exists a plateau in the temperature dependence of the Young modulus normalized yield stress in the temperature range 540 K–660 K. The stress sensitivity parameter and the activation area exhibit a maximum at about 550 K. The discontinuous creep deformation is observed. It is suggested that the dynamic strain aging plays a significant role in the creep deformation of the Zr + 4·5% Sn + 1% Mo alloy in the temperature interval 540 K–660 K.This paper has been prepared for the Symposium Recent Problems in the Plasticity of Metals and Alloys, Prague, August 1980.The authors thank Prof. J. adek, DrSc., for valuable discusions.     

Cu2ZnSnSe4 films by selenization of Sn–Zn–Cu sequential films

This paper deals with the formation of Cu₂ZnSnSe₄ (CZTS) in the process of selenization of metal precursor layers in elemental selenium vapour. Metallic precursors were sequentially evaported from Sn, Zn and Cu sources. Precursor Sn–Zn–Cu films have a “mesa-like” structure and consist mainly of Cu₅Zn₈ and Cu₆Sn₅ phases. It was confirmed that the formation of different binary copper selenides is the dominating process of selenization in elemental Se vapour at temperatures up to 300 °C. The formation of kesterite CZTS films begins at 300 °C and dominates at higher temperatures, always resulting in multiphase films that consist of high-quality Cu₂ZnSnSe₄ crystals and of a separate phase of ZnSe.     

Microstructure and mechanical properties of V–4Ti–4Cr alloy as a function of the chemical heat treatment regimes

The regularities of the formation of a heterophase structure and mechanical properties of V–4Ti–4Cr alloy as a function of thermomechanical and chemical heat treatments are studied. The regimes of thermomechanical treatment which provide the formation of a heterophase structure with a homogeneous volume distribution of oxycarbonitride nanoparticles with a size of about 10 nm and an increase in the volume content and thermal stability of this phase and which provide an increase in the temperature of alloy recrystallization are developed. The formation of the heterophase structure results in a substantial (up to 70%) increase in the short-term high-temperature strength of the alloy at T = 800°C. The increase in the strength is achieved while keeping a rather high level of plasticity.     

Yttria catalyzed microstructural modifications in oxide dispersion strengthened V–4Cr–4Ti alloys synthesized by field assisted sintering technique

Abstract

The present work deals with synthesis, characterisation and elevated temperature mechanical property evaluation of V–4Cr–4Ti and oxide (yttria = 0.3, 0.6 and 0.9 at%) dispersion strengthened V–4Cr–4Ti alloy processed by mechanical alloying and field-assisted sintering, under optimal conditions. Microstructural parameters of both powder and sintered samples were deduced by X-ray diffraction (XRD) and further confirmed with high resolution transmission electron microscopy. Powder diffraction and electron microscopy study show that ball milling of starting elemental powders (V–4Cr–4Ti) with and without yttria addition has resulted in single phase α–V (V–4Cr–4Ti) alloy. Wherein, XRD and electron microscopy images of sintered samples have revealed phase separation (viz., Cr–V and Ti–V) and domain size reduction, with yttria addition. The reasons behind phase separation and domain size reduction with yttria addition during sintering are extensively discussed. Microhardness and high temperature compression tests were done on sintered samples. Yttria addition (0.3 and 0.6 at.%) increases the elevated temperature compressive strength and strain hardening exponent of α–V alloys. High temperature compression test of 0.9 at% yttria dispersed α–V alloy reveals a glassy behaviour.