纳米铜薄膜塑性变形中空位型缺陷形核与演化的分子动力学研究

本文采用分子动力学方法模拟了纳米单晶铜薄膜在单向拉伸载荷作用下的塑性变形过程, 重点分析了空位型缺陷的形核过程和演化机理. 在模拟过程中, 采用镶嵌原子势描述原子间的相互作用. 模拟结果表明纳米铜薄膜中塑性变形起源于位错的表面形核, 而空位型缺陷的形核及演化都与晶体内部的位错运动密切相关. 空位型缺陷通常从位错割阶及层错交截处开始形核, 以单空位、层错四面体和不规则空位团等形式存在. 关键词： 纳米薄膜 塑性变形 空位 层错四面体     

层错四面体对单晶铜层裂行为影响的分子动力学研究

层错四面体是一种典型的三维空位型缺陷,广泛存在于受辐照后的面心立方金属材料中,对材料的力学性能有显著的影响.目前,关于层错四面体对辐照材料层裂行为的影响还缺乏深入系统的研究.本文使用分子动力学方法模拟了含有层错四面体的单晶铜在不同冲击速度下的层裂行为,对整个冲击过程中的自由表面速度及微结构演化等进行了深入的分析.研究发现,层错四面体在冲击波作用下会发生坍塌,并进一步诱导材料产生位错、层错等缺陷.在中低速度加载下,层错四面体坍塌引起的缺陷快速向周围扩展,为孔洞提供了更宽的形核区域,促进了孔洞的异质成核,造成材料层裂强度大幅度减小.当冲击速度较高时,层错四面体坍塌导致的局部缺陷对材料的层裂强度不再有明显影响.     

α-Fe纯I型裂纹扩展中位错形成过程的三维分子动力学模拟

通过分子动力学方法模拟了三维 α-Fe I型裂纹的单向拉伸实验中的裂纹扩展过程。研究了在不同温度下裂纹扩展时位错的形成过程和断裂机理。计算结果表明,裂纹扩展过程是位错不断发射的过程。 裂纹尖端附近先形成无位错区和层错,当裂纹处应力增加到KI=0.566 MPam1/2时,裂纹尖端附近的某一层原子会逐渐分叉形成两层原子,分层后的原子层继续分离形成位错;当应力KI 达到0.669MPam1/2时第一个位错发射。随着温度的升高,临界应力强度因子逐渐降低,同时位错发射也相应地加快。     

冲击条件下含纳米空洞的单晶铜的塌缩

利用分子动力学方法研究了单晶铜中不同大小的球形空洞在冲击波下的演化过程.模拟结果表明不同大小空洞的塌缩过程不同.模拟中冲击波由空洞左边扫向空洞右边.在较大尺寸的空洞塌缩过程中会产生系列的位错环.当空洞半径较小时，先在空洞的右侧形成位错环，当空洞半径增大到某一临界大小时，在空洞左右两侧同时产生位错环，当空洞半径较大时，先在空洞左侧形成位错环.当空洞左右两侧的位错环均形成以后，其右侧位错环前端的生长速度大于其左侧的.空洞半径增大，相应的位错环前端的生长速度变化不大.当空洞半径增大时，空洞中心指向位错源的矢量方     

α-Fe纯I型裂纹扩展中位错形成过程的三维分子动力学模拟

通过分子动力学方法模拟了三维 α-Fe I型裂纹的单向拉伸实验中的裂纹扩展过程。研究了在不同温度下裂纹扩展时位错的形成过程和断裂机理。计算结果表明,裂纹扩展过程是位错不断发射的过程。 裂纹尖端附近先形成无位错区和层错,当裂纹处应力增加到KI=0.566 MPam1/2时,裂纹尖端附近的某一层原子会逐渐分叉形成两层原子,分层后的原子层继续分离形成位错;当应力KI 达到0.669MPam1/2时第一个位错发射。随着温度的升高,临界应力强度因子逐渐降低,同时位错发射也相应地加快。     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

α-Fe裂纹的分子动力学研究

通过分子动力学方法，模拟了α-Fe裂纹的单轴拉伸实验中的形变过程.研究了不同晶体取向裂纹的形变特点和断裂机理，观察到各种形变现象，如位错形核和发射，位错运动，堆垛层错或孪晶的形成，纳米空洞的形成与连接等.计算结果表明，裂纹扩展是塑性过程和弹性过程相结合的过程，其中塑性过程表现为由裂尖发射的位错导致的原子切变行为，而弹性过程的发生则是由无位错区中的原子断键所导致.同时还研究了α-Fe裂纹的形变特点和断裂机理与温度场和应力场的依赖关系.     

单晶Cu冲击加载及卸载下塑性行为的微观模拟

使用分子动力学方法对室温下单晶铜沿［001］和［111］方向冲击加载及卸载下的塑性行为进行了模拟,得到了Hugoniot关系以及冲击熔化压力,与实验基本符合. 加载过程中,较高的初始温度有利于位错的形核与发展. 通过对冲击波在自由表面卸载过程的模拟和分析发现：卸载过程呈现“准弹性卸载行为”;沿［001］方向卸载后大量不全位错环与堆积层错消失,而沿［111］方向卸载后只有少量层错消失,部分层错甚至会发展扩大. 关键词： 分子动力学 冲击波 塑性     

冲击条件下含纳米空洞的单晶铜的塌缩

利用分子动力学方法研究了单晶铜中不同大小的球形空洞在冲击波下的演化过程.模拟结果表明不同大小空洞的塌缩过程不同.模拟中冲击波由空洞左边扫向空洞右边.在较大尺寸的空洞塌缩过程中会产生系列的位错环.当空洞半径较小时,先在空洞的右侧形成位错环,当空洞半径增大到某一临界大小时,在空洞左右两侧同时产生位错环,当空洞半径较大时,先在空洞左侧形成位错环.当空洞左右两侧的位错环均形成以后,其右侧位错环前端的生长速度大于其左侧的.空洞半径增大,相应的位错环前端的生长速度变化不大.当空洞半径增大时,空洞中心指向位错源的矢量方 关键词： 纳米空洞 位错环 冲击波 塑性变形     

面心立方铜晶体中空洞生长与贯通的尺寸效应

利用分子动力学方法模拟沿拉伸方向排布的两个空洞在单轴拉伸作用下的动力学行为.着重研究不同尺寸空洞对其拉伸贯通过程的影响.结果表明,不同尺度的空洞都是通过空洞表面发射位错环长大与贯通的.空洞在弹性阶段沿加载方向缓慢长大,在塑性阶段沿垂直方向生长后形成类八面体形状.随空洞尺寸的减小,临界屈服应力逐渐增大.当半径较大时,位错对称成核、迁移,空洞沿加载方向被拉长,演化过程相似;当半径较小时,位错不对称成核,空洞沿垂直方向被拉长.空洞生长分为弹性变形、独立长大、融合贯通和平稳生长四个阶段.独立生长阶段随尺寸的减小逐渐缩短甚至消失.     

强流脉冲电子束辐照诱发多晶纯铝中的空位缺陷簇结构

利用强流脉冲电子束（HCPEB）技术对多晶纯铝样品进行辐照,采用透射电子显微镜详细分析了辐照诱发的空位簇缺陷.HCPEP辐照后,在辐照表层内形成了大量的四方形空位胞,其间包含位错圈和堆垛层错四面体（SFT）等类型的空位簇缺陷.1次辐照后,空位胞内产生空位型位错圈,5次辐照则主要产生SFT;10次辐照后,空位胞内产生的空位簇缺陷主要是位错圈,局部区域也观察到了SFT缺陷,在产生SFT的附近区域具有很低的位错密度或者几乎无位错出现.HCPEB辐照产生的瞬间加热和冷却诱发了幅值极大且应变速率极高的应力,这一因素 关键词： 强流脉冲电子束 多晶纯铝 空位簇缺陷 堆垛层错四面体     

Direct transformation of vacancy voids to stacking fault tetrahedra

Defect accumulation is the principal factor leading to the swelling and embrittlement of materials during irradiation. It is commonly assumed that, once defect clusters nucleate, their structure remains essentially constant while they grow in size. Here, we describe a new mechanism, discovered during accelerated molecular dynamics simulations of vacancy clusters in fcc metals, that involves the direct transformation of a vacancy void to a stacking fault tetrahedron (SFT) through a series of 3D structures. This mechanism is in contrast with the collapse to a 2D Frank loop which then transforms to an SFT. The kinetics of this mechanism are characterized by an extremely large rate prefactor, tens of orders of magnitude larger than is typical of atomic processes in fcc metals.     

Molecular dynamics study of configuration and stability of vacancy clusters in fcc Ag

Vacancies may agglomerate to form vacancy Frank loops of different shapes, as observed by transmission electron microscopy in quenched and irradiated fcc metals. The dynamics for the dissociation of vacancy Frank loops and the subsequent evolution of defect nanostructures were explored by means of the molecular dynamics method and displayed by the local crystalline order method. Frank loops of different initial shapes were found to transform to a variety of defect nanostructures: triangle to stacking fault tetrahedra, equilateral hexagon to quasi-heptahedron, and scalene hexagon to various intermediate structures depending on the length of the short side. The formation energies for vacancy Frank loops of different geometries are introduced to categorize various final configurations. Crystallographic analysis and elasticity calculations were performed to elucidate the transform mechanisms in fcc Ag.     

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations

We present a comprehensive dislocation dynamics (DD) study of the strength of stacking fault tetrahedra (SFT) to screw dislocation glide in fcc Cu. Our methodology explicitly accounts for partial dislocation reactions in fcc crystals, which allows us to provide more detailed insights into the dislocation–SFT processes than previous DD studies. The resistance due to stacking fault surfaces to dislocation cutting has been computed using atomistic simulations and added in the form of a point stress to our DD methodology. We obtain a value of 1658.9 MPa, which translates into an extra force resolved on the glide plane that dislocations must overcome before they can penetrate SFTs. In fact, we see they do not, leading to two well differentiated regimes: (i) partial dislocation reactions, resulting in partial SFT damage, and (ii) impenetrable SFT resulting in the creation of Orowan loops. We obtain SFT strength maps as a function of dislocation glide plane-SFT intersection height, interaction orientation, and dislocation line length. In general SFTs are weaker obstacles the smaller the encountered triangular area is, which has allowed us to derive simple scaling laws with the slipped area as the only variable. These laws suffice to explain all strength curves and are used to derive a simple model of dislocation–SFT strength. The stresses required to break through obstacles in the 2.5–4.8-nm size range have been computed to be 100–300 MPa, in good agreement with some experimental estimations and molecular dynamics calculations.     

Atomistic simulation of the interaction between mobile edge dislocations and radiation-induced defects in Fe-Ni-Cr austenitic alloys

The classical molecular dynamics method is employed to simulate the interaction of edge dislocations with interstitial Frank loops (2 and 5 nm in diameter) in the Fe-Ni₁₀-Cr₂₀ model alloy at the temperatures T = 300–900 K. The examined Frank loops are typical extended radiation-induced defects in austenitic steels adapted to nuclear reactors, while the chosen triple alloy (Fe-Ni₁₀-Cr₂₀) has the alloying element concentration maximally resembling these steels. The dislocation-defect interaction mechanisms are ascertained and classified, and their comparison with the previously published data concerning screw dislocations is carried out. The detachment stress needed for a dislocation to overcome the defect acting as an obstacle is calculated depending on the material temperature, defect size, and interaction geometry. It is revealed that edge dislocations more efficiently absorb small loops than screw ones. It is demonstrated that, in the case of small loops, the number of reactions accompanied by loop absorption increases with temperature upon interaction with both edge and screw dislocations. It is established that Frank loops are stronger obstacles to the movement of screw dislocations than to the movement of edge ones.     

Delayed plasticity in nanoindentation of annealed crystals

Continuum constitutive relations used in the design of macro-sized components assume that the elastic limit of a crystalline solid is time independent. Recent experiments using the nanoindentation technique, however, reveal that the elastic limit of submicron-sized metallic volumes decreases as time under load increases. A submicron metallic volume can sustain a static load in the elastic regime initially, but transition to plastic deformation may occur after some waiting time. In this paper, the characteristics of this type of delayed plasticity are reviewed. The available experimental data suggest that homogeneous nucleation of the plasticity events, which was frequently discussed in the recent literature, occurs only at sufficiently high loads within a narrow range. In a lower and broader load range, the nucleation of the plasticity events occurs at a history dependent rate, thus via a damage-accumulation mechanism not compatible with the homogeneous nucleation theory. A model based on the diffusion-controlled, subcritical growth of a Frank loop just underneath the indenter is proposed in this work to explain the history dependent nucleation of instability observed at lower loads. By fitting to the available nanoindentation data in Ni₃Al, it is apparent that self-diffusion along the indenter-sample interface, rather than through the bulk, is likely to be the controlling factor for the growth of the Frank loop to a critical size to yield a dislocation avalanche.     

Fréedericksz transition thresholds in pretilted nematic slabs

The appearance of periodically distorted director structures in pretilted nematic slabs with rigid boundary conditions above the Fréedericksz transition is determined as a function of the Frank elastic constant ratios K(2)/K(1), K(3)/K(1), and the pretilt angle. It is found that the periodically distorted state can be reached either directly from the undistorted state on increasing the magnetic field or indirectly through the homogeneously distorted state. A new threshold field for the transition undistorted state, homogeneously distorted state was found for specific ranges of the Frank elastic constant ratios K(2)/K(1), K(3)/K(1), and the pretilt angle.     

n型金属氧化物半导体场效应晶体管噪声非高斯性研究

基于n型金属氧化物半导体场效应晶体管（nMOSFET）噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨. 关键词： 噪声 非高斯性 n型金属氧化物半导体场效应晶体管 氧化层陷阱     

Mechanisms of stacking fault tetrahedra destruction by gliding dislocations in quenched gold

The destruction processes of stacking fault tetrahedra (SFTs) induced by gliding dislocations were examined by transmission electron microscopy (TEM) in situ straining experiments for SFTs with edge lengths ranging from 10 to 50 nm. At least four distinct SFT destruction processes were identified: (1) consistent with a Kimura–Maddin model for both screw and 60° dislocations, (2) stress-induced SFT collapse into a triangular Frank loop, (3) partial annihilation leaving an apex portion and (4) complete annihilation. Process (4) was observed at room temperature only for small SFTs (～10 nm); however, this process was also frequently observed for larger SFTs (～30 nm) at higher temperature (～853 K). When this process was induced, the dislocation always cross-slipped, indicating only screw dislocations can induce this process.     

动态压缩下马氏体相变力学性质的微观研究

使用分子动力学方法,模拟了活塞以恒定加速运动从一端压缩单晶铁（沿［001］晶向）发生马氏体相变的微观过程.根据模拟结果将上述压缩过程分为弹性压缩、晶格软化、相变（bcc至hcp）、超应力松弛和高压相弹性压缩五个阶段,对各阶段的原子滑移规律和应力变化特征做了详细分析.分析得出应力超过约10 GPa时,开始出现弹性常数软化行为;层错结构（fcc）和孪晶界为新相形核的两种缺陷,前者更为稳定;相变后粒子首先进入超应力松弛状态（即沿加载方向的偏应力呈现负值）,在应力超过约36 GPa粒子转变为高压相弹性压缩状态. 关键词： 分子动力学 单晶铁 相变 动态压缩