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1.
为了准确评估红外材料和涂层的隐身性能,研制了一套IRS400型材料发射率测试装置,主要用于温度范围(50~400)℃,光谱范围(3~5)m和(8~12)m的固体不透明材料和涂层定向发射率测量。给出IRS400型材料发射率测试装置的技术指标,阐述其工作原理,IRS400的光学系统采用全反射式设计,探测器选用钽酸锂热释电探测器,采用50 ℃~1 000 ℃黑体辐射源标准装置对黑体发射率B(1,2)进行标定。通过解决标定和环境温度补偿等关键技术,确保发射率测量不确定度小于2%(k=2)。  相似文献   

2.
介绍了镀膜技术和红外热像仪测量镀膜材料发射率的方法,并利用红外热像法分析了基底材料对薄膜发射率的影响。通过实验研究了镀膜时间与膜厚度变化导致的测量波段发射率的变化关系。  相似文献   

3.
针对基于光谱数据进行温度与发射率分离过程中存在的n个方程包含n+1个未知数这一欠定问题,提出利用牛顿迭代法来实现材料表面真温及发射率的反演计算,通过给定温度和发射率初值,利用泰勒级数的线性项建立迭代公式,通过迭代得到温度和发射率的近似解。分别利用理论热辐射谱和腔黑体的实验数据进行验证,结果表明,任意给定温度和发射率初值均可获得与真实温度接近的计算温度值,相对误差小于0.09。发射率反演结果与真实发射率线形一致,当温度和发射率初值越接近真实温度和发射率时,发射率反演结果越精确。该方法消除了发射率假定模型限制,有望应用于高温及超高温下各种材料真实温度和光谱发射率研究。  相似文献   

4.
基于基尔霍夫定律,利用砷化镓(GaAs)半导体激光器作为标准光源研制了一种能够准确实时测量不透明物体光谱发射率的反射式测量装置。利用该装置在300~1 123K之间对黄铜和紫铜两种样品在波长1.55μm处的光谱发射率进行了系统的研究,探讨了温度、氧化、加热时间等因素对两种铜样品光谱发射率的影响。实验结果表明:黄铜和紫铜的光谱发射率均随温度的升高而增大,并且紫铜的光谱发射率始终大于黄铜的光谱发射率,两种样品随温度的光谱发射率曲线均出现了峰值和谷值。通过分析有氧化膜时金属表面的反射模型,得到了金属表面氧化膜厚度的计算公式,并利用该公式估算了紫铜发射率出现峰值和谷值时氧化膜的厚度。恒温长时间测量结果表明:光谱发射率随加热时间出现小幅增大,2h后,由于样品表面氧化达到一定程度,氧化速率开始变缓,样品表面的光谱发射率也随之开始趋于稳定。样品在较高温度处的光谱发射率数值始终大于较低温度处的发射率数值。该研究进一步丰富了铜的光谱发射率数据,并为其光谱发射率的应用提供了实验依据。  相似文献   

5.
ITO导电膜红外发射率理论研究   总被引:5,自引:0,他引:5       下载免费PDF全文
根据红外辐射理论和薄膜光学原理计算了高品质ITO(indium tin oxide)导电膜的红外发射 率,其理论曲线与实测曲线基本符合. 并得出方块电阻小于30Ω时,ITO膜在红外波段8—14μ m的平均红外发射率理论值小于0.1.实际制备方块电阻小于10Ω的ITO膜具有优良的红外隐身 性能. 讨论了高品质ITO膜具有低红外发射率的物理机理,并提出了低红外发射率临界方块电 阻值,这有利於理论研究和工艺制备红外隐身ITO膜. 关键词: 红外发射率 ITO薄膜 理论计算 方块电阻  相似文献   

6.
为了得到辐射能的方向分布特性,利用蒙特卡罗法,研究了定向管内壁面为不等温灰体、其底部假想圆型辐射器为黑体时,管内壁发射率、管长与半径比、管内空气流速等参数的变化对管口表面当量定向发射率的影响,计算结果表明:管长与半径比增加,管口表面较大的当量定向发射率向小角度的天顶角方向移动,空气流速仅影响当量定向发射率数值大小。  相似文献   

7.
地表微波发射率是含水量、表面粗糙度、地物结构等的函数,这些因素具有明显的季节性。用晴空条件下高级微波扫描辐射计(AMSR-E)的瞬时发射率,辅助2003年IGBP(international geosphere-biosphere project labels)地表分类数据,获得了北半球各种植被覆盖地区2003年夏冬两季每半月平均的地表微波发射率。分析不同植被发射率随频率、极化、时间等变化的特性。结果表明,植被发射率在H和V极化均随频率的增加而增加,在有降雪的地区发射率随频率增加而迅速减小。植被区夏季发射率较高,89GHz的V极化发射率值大于0.944,且发射率时间序列上很稳定,极化差较低(<0.081),同一地区发射率时间序列RSME小于0.007 2。植被区冬季在积雪出现的地方发射率值降低,尤其表现在高频部分。随着植被密度的增加,植被地区发射率值增加而极化差降低。  相似文献   

8.
文章以土壤为例,首先指出了典型的温度反射率分离算法由高光谱FTIR数据反演温度和发射率的局限; 当地物出射能量的真值和地物真实温度对应的黑体辐射在数值上的差别与仪器的噪声等效光谱辐射亮度在相同的数量级上时,产生奇异发射率的概率很大, 野外测量时这种现象在714和1 250 cm-1附近经常发生。针对这个局限,构建了一个三层的感知器(MLP)网络,利用ASTER光谱库中的土壤发射率光谱生成训练样本,MODIS光谱库中的土壤发射率光谱生成测试样本,对网络进行训练和测试,取得了比较好的结果。同时利用光谱平滑迭代算法(ISSTES)由测试样本反演土壤的温度和发射率,并与MLP方法的结果进行比较,MLP方法反演的土壤发射率精度在可接受的范围之内,略低于ISSTES算法,MLP方法的优点在于,它能够克服典型的温度发射率算法的局限,可以作为典型的温度发射率分离算法有益的补充。  相似文献   

9.
从麦克斯韦方程出发,可以得到超薄金属膜层光学常数n、k与其厚度有关系的理论依据。采用电阻热蒸发和电子束热蒸发的方法在K9玻璃基底上分别沉积了不同厚度的Cu膜、Cr膜、Ag膜,由椭偏法检测、Drude模型拟合,获得了不同厚度Cu膜、Cr膜、Ag膜光学常数n、k随波长λ的变化规律。超薄金属薄膜与块状金属的光学常数相差较大,随着薄膜厚度的增加,n、k值趋近于块状金属。通过对样品膜层吸收、色散特性的分析,发现连续金属薄膜在可见光波段对长波的吸收较大,而且相比于介质薄膜平均色散率高10mn~102nm量级。  相似文献   

10.
溅射无定形硅的紫外-可见椭圆偏振光谱和光学常数   总被引:1,自引:0,他引:1  
利用作者试制的紫外-可见椭圆偏振光谱仪研究了溅射无定形硅薄膜的光学性质,获得了不同氢分压制备的无定形硅在紫外至可见光谱范围内的n~λ、k~λ等关系,并对结果进行了讨论.  相似文献   

11.
ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.  相似文献   

12.
Zn oxide, Ti oxide and Zn-Ti oxide thin films were prepared by vacuum evaporation. Their structural and optical properties have been obtained by X-ray diffractometry (XRD), the energy-dispersive X-ray fluorescence (EDXRF) method and spectrophotometry. The EDXRF method was used to study the stoichiometry of the deposited Zn-Ti oxide films. The XRD patterns show that the prepared ZnO and Zn-Ti oxide films were polycrystalline, while Ti oxide films were amorphous. Spectroscopic optical constants n() and k() as well as the energy gap Eg were evaluated from spectrophotometry in the interband transition energy region. It was discovered that ZnO–TiO thin films remain transparent in a shorter wavelength range than the ZnO thin films, resulting from the slight increase of their band gap. It was found that n, k and transmittance values for the mixed-oxide film vary smoothly between the values of the pure constituent oxides in the fundamental energy gap region. PACS 68.60.Wm; 68.55.-a; 78.66.-w  相似文献   

13.
We present a simple model of spin-spin coupling which provides insight into the nature of the rapid decrease in the Curie temperature with decreasing thin film thickness n (number of monolayers). The shift of Curie temperature t(n) = 1-T(c)(n)/T(c)(infinity) follows the usual power law t(n) approximately n(-lambda) in thin films crossing over to linear behavior t(n) approximately n in the ultrathin film thickness limit. Experimental results for ferromagnetic thin films are compared, and shown to follow curves of t(n) with lambda values dependent on the nature of the spin-spin interactions.  相似文献   

14.
When a thin glassy film is strained uniaxially, a shear deformation zone (SDZ) can be observed. The ratio of the thickness of the SDZ to that of the undeformed film is related to the maximum extension ratio, lambda, which depends on the entanglement molecular weight, M(e). We have measured lambda as a function of film thickness in strained freestanding films of polystyrene as a probe of M(e) in confinement. It is found that thin films stretch further than thick films before failure, consistent with the interpretation that polymers in thin films are less entangled than bulk polymers, thus the effective value of M(e) in thin films is significantly larger than that of the bulk. Our results are well described by a conceptually simple model based on the probability of finding intermolecular entanglements near an interface.  相似文献   

15.
李斌  曾菱  张凤山 《光学学报》2002,22(11):1291-1295
对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。  相似文献   

16.
Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease.  相似文献   

17.
The correlation between emissivity and giant magnetoresistance (GMR) in magnetic thin films is investigated at infrared (IR) wavelengths using a thin-film model of emissivity. The sensitivity of emissivity to GMR is shown to depend upon film thickness, and agrees excellently with bulk-material results for films thicker than the material skin depth. However, for films thinner than the skin depth the sensitivity to GMR is shown to weaken. In addition, at mid-to-far IR wavelengths the spectral dependence of the correlation is investigated using a modified Drude-type expression for the refractive index combined with the thin-film model. This is applied to a multilayered GMR material, and the sensitivity of emissivity to GMR is shown to have a similar spectral dependence to that of the magnetorefractive effect. An analytical interpretation in terms of skin depth is also developed at long wavelengths, and shown to agree excellently with thin-film simulations.  相似文献   

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