Si和6H-SiC衬底上β-FeSi2薄膜的制备

以6H-SiC (0001) Si面和Si(100)为衬底,采用磁控溅射Fe-Si合金靶和Si靶两靶共溅射的方法,并经过后续的快速退火成功制备了β-FeSi2薄膜.通过X射线衍射(XRD)、拉曼(RAMAN)和电子扫描电镜(SEM)研究了不同衬底对薄膜生长过程的影响.结果表明:与Si衬底不同,6H-SiC为衬底所生长的FeSix薄膜与衬底之间很难产生相互扩散,导致薄膜中的Si原子主要来源于靶材.同时分析不同退火温度对6H-SiC衬底和Si衬底上的FeSix薄膜的影响,并相比较.结果表明:不同衬底Si(100)和6H-SiC (0001) Si面所生长的薄膜经900℃退火时皆完全转化为多晶β-FeSi2相,其择优取向皆为(220)/(202),且随温度从500℃到900℃的不断上升,(220)/(202)衍射峰的强度增强,半高宽变小,得到900℃下的半高宽为0.33°.     

非晶Ni-Al阻挡层对快速退火制备的硅基Ba0.6Sr0.4TiO3薄膜结构及物性影响的研究

应用非晶Ni-Al薄膜作为扩散阻挡层,采用磁控溅射法和溶胶-凝胶法在Pt/TiO2/SiO2/Si(001)衬底上制备了Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt电容器结构,研究了在650～800 ℃温度范围内快速退火(RTA)工艺对电容器结构和物理性能的影响.结果表明:在外加电场为-100 kV/cm时,700 ℃和750 ℃退火样品的介电常数达到最大,分别为150和170.非晶Ni-Al薄膜的应用可以有效地降低BST薄膜的漏电流密度.650 ℃退火样品在整个测试电场范围内满足欧姆导电机制;700 ℃、750 ℃和800 ℃退火样品分别在电压低于-3.67 V、-2.65 V和-2.14 V时满足欧姆导电机制,在电压高于-3.67 V、-2.65 V和-2.14 V时满足普尔-弗兰克导电机制.     

溶胶-凝胶柠檬酸燃烧法制备Sr2FeMoO6-δ粉体

采用溶胶-凝胶柠檬酸燃烧法成功制备出Sr2FeMoO6-δ纳米粉体,并研究了溶胶的pH、煅烧气氛、煅烧温度对Sr2FeMoO6-δ粉体形成的影响.利用X射线衍射仪测试分析了粉体的物相以及利用扫描电子显微镜观察了粉体的微观结构.结果表明:胶液的pH为2～3,经过5;H2/Ar还原气氛在900～ 1000℃煅烧8h,得到单一的双钙钛矿结构的Sr2FeMoO6-δ粉体.     

热退火对ZnO-SiO2复合薄膜的微结构及荧光特性的影响

采用脉冲激光沉积技术(PLD)在单晶Si衬底上制备了ZnO-SiO2复合薄膜.分别用SEM、XRD观察了样品在沉积态(300℃)及700℃和900℃下热退火后的形貌和结构.发现经700℃热处理后,样品中有第三相β-Zn2SiO4形成,经900℃热处理后的样品中硅锌矿型Zn2SiO4取代了β-Zn2SiO4成为第三相.研究了热退火处理前后样品的荧光特性变化,结果表明经700℃热处理后,荧光光谱与沉积态相比,紫外区域的发光强度有较大提高,可见光区域的宽带强度变弱;经900℃热处理后,紫外区域荧光强度与700℃处理相比略有减小,可见光发光带消失.     

退火温度对Co掺杂CeO2稀磁氧化物薄膜的结构和铁磁性能的影响

采用溶胶-凝胶法,在Si(100)和石英玻璃衬底上制备了3;Co掺杂CeO2稀磁氧化物薄膜,研究了不同退火温度(500 ℃, 600 ℃和700 ℃)对薄膜结构和铁磁性能的影响.XRD 和拉曼光谱结果表明,随着退火温度的升高,薄膜晶化度明显提高.不同退火温度下的3;Co掺杂CeO2薄膜为多晶薄膜,且未破坏CeO2原有的结构.随着退火温度的升高, 晶粒尺寸逐渐增大.另外,3;Co掺杂CeO2薄膜在可见光范围内都有很好的透射率,其室温下的光学带隙Eg随退火温度增加而减小.超导量子干涉磁强计(SQUID)测量表明所有样品都表现出室温铁磁性,随着退火温度的升高,饱和磁化强度和矫顽力增大,700 ℃退火的薄膜具有最大的饱和磁化强度和最大的矫顽力.不同退火温度导致样品的磁性有了明显的变化,这源于磁性产生的不同机理.可见薄膜的结构最终影响了其铁磁性能.     

退火温度对La3Ga5SiO14薄膜结构及表面形貌的影响

采用脉冲激光沉积技术在Si(100)衬底上制备了La3Ga5SiO14薄膜,并研究了不同的退火温度对薄膜结构和表面形貌的影响.衬底温度为室温时生长的薄膜经过800 ℃以上的高温退火后,由最初的无定形态转变为无规则取向的多晶结构.衬底温度为400 ℃时生长的薄膜经过800 ℃退火处理后呈现无序的多晶形态.当退火温度进一步升高至1000 ℃时,XRD图谱显示薄膜由最初的(220)和(300)两个结晶方向转变为以(200)和(400)为主要取向的多晶结构.表面形貌分析表明:衬底温度为400 ℃时,随着退火温度的升高,薄膜颗粒尺寸逐渐增大,表面无裂纹,而衬底温度为室温时生长的薄膜退火后则出现大量的裂缝、孔洞等缺陷.     

温度对SiO2表面上磁控溅射制备Ge纳米点的生长模式和尺寸的影响

采用磁控溅射技术在SiO2/Si(100)表面上制备了一系列不同生长温度的Ge纳米点样品.原子力显微镜(AFM)的实验结果表明:不同衬底温度下Ge纳米点在SiO2薄膜上的生长模式和尺寸分布有所不同.当衬底生长温度达到500 ℃时,SiO2开始与Ge原子发生化学反应,并形成"Ge纳米点的Si窗口".在此温度条件下,外延生长实验可获得尺寸均匀且密度高达3.2×1010 cm-2的Ge纳米点.     

Al2O3衬底上生长ZnO薄膜的结构和光学特性

用脉冲激光沉积法在Al2O3(0001)衬底上沉积了ZnO薄膜.衬底温度分别为300℃、400℃、500℃、600℃和700℃.利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究.X射线衍射的结果表明在不同温度下生长的ZnO薄膜均具有高度c轴择优取向,衬底温度400℃时,膜的应力较小质量较高.ZnO薄膜有很强的紫外发光峰,紫外发光峰的强度与衬底温度密切相关,并发现当衬底温度从300℃增到400℃时,紫外发射峰出现6nm的蓝移.     

射频磁控溅射生长ZnO薄膜及性能研究

采用射频磁控溅射技术在玻璃衬底生长ZnO及ZnO∶ Al薄膜,通过改变氩氧比、衬底温度和溅射功率获得样品.用X射线衍射仪、紫外-可见分光光度计、扫描电子显微镜进行表征.结果发现:室温下40W的溅射功率1h的溅射时间,改变氩氧比获得样品.XRD图谱中无明显衍射峰出现;紫外可见光分光光度计测试结果显示400nm波长以下,透光率在90;以上.说明薄膜生长呈无定形.衬底温度高于200℃样品,XRD有明显(002)衍射峰出现,在400～ 800 nm波长范围,透光率在88;以上,衬底温度300℃时,XRD衍射峰半高宽最小,晶粒尺寸大.TEM显示:衬底300℃晶粒尺寸最大,晶体发育好.在200℃掺铝ZnO薄膜,(002)峰不明显,有(101)峰出现.     

退火温度对InP晶体中Er3+离子的发光特性影响的研究

利用离子注入法,以300keV的能量,7×1014cm-2的剂量,在室温下,对(100)InP晶体进行稀土(RE)元素Er的注入;分别在600℃、650℃、700℃、750℃、800℃温度下,采用安瓿闭管恒温退火20h.二次离子质谱仪(SIMS)观测到稀土元素Er原子在InP中的分布,直到800℃时几乎没有变化;在77K温度下,观测到InP中Er3+离子的1.54μm特征光致发光(PL)峰.提出退火温度对InP中Er3+离子的光致发光强度影响的机理.     

Effects of system parameters on MHD flows in rotating magnetic fields

A numerical study is presented of the electromagnetic and hydrodynamic field distributions induced by rotating magnetic fields in a conducting fluid contained in a cylindrical vessel with insulated and conducting walls and ends. Simulations are carried out to determine the effect of various rotating electromagnetic field configuration parameters on magnetohydrodynamic melt flow structure and velocity distributions. Results show that the flow motion consists of the primary azimuthal and secondary meridional flows and that the detailed pattern of these flows changes with the system parameters such as the electric conductivities of the container and the liquids, and the relative positions of the inductor and melts. It is found that the basic structure of the melt velocity distribution is not affected noticeably by the distribution of electromagnetic forces in the case of symmetric distribution, but it changes significantly if this symmetry breaks.     

钆基配位聚合物分子磁制冷材料研究进展

磁制冷是一种高效、节能、环保的新型制冷技术,在气体液化、高能物理、超导技术等诸多领域具有广阔的应用前景。Gd基配位聚合物分子磁制冷材料不仅具有迷人的结构和优异的磁热效应,而且表现出良好的物理和化学稳定性,因而备受关注。本文主要从合成策略、结构与性能方面出发,综述了近年来Gd基配位聚合物分子磁制冷材料的研究进展,探讨了分子结构与磁性能之间的构效关系以及提高磁热效应的有效方法,并对今后的发展和面临的问题进行了讨论和展望。     

Impact of magnetic field on the nucleation and morphology of calcium carbonate crystals

The influence of static magnetic field of strength 0.75 T on the nucleation of calcium carbonate crystals has been investigated. Particle size analysis shows that magnetic field can cause marked difference in distribution. One of the major impacts of magnetic exposure is the increase in number of the critical nuclei formed. Also, magnetic field promotes the formation of parallelepipedic calcite crystals and the dissolution of the smaller crystals by Ostwald ripening mechanism. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

烧结温度对相分离锰氧化物中磁相变的影响

采用标准固态反应法,在不同的烧结温度下制备了Pr0.6Ca0.38Ba0.02MnO3和Pr0.6Ca0.4Mn0.98Ga0.02O3,以研究烧结温度对样品颗粒尺寸以及磁相变的影响。通过X射线衍射测试,我们发现对于这两个系列的样品,无论是Ba对Ca的替代还是Ga对Mn的替代,各样品均为菱面体对称结构,且没有任何杂相。扫描电镜实验表明,随着烧结温度的升高,两个系列样品的颗粒尺寸都将增大。研究低温下样品磁化强度随外加磁场变化(M-H)的实验结果后,我们发现随烧结温度的升高即颗粒尺寸的增大,由反铁磁向铁磁发生磁相变的临界磁场减小,而场致铁磁性将增加,这说明颗粒长大对铁磁态的发展是有利的。对比两个样品的磁性质后,我们发现Ba2+替代在破坏电荷轨道有序导致场致铁磁性的能力上比Ga3+替代要强。     

Effect of ferric ions on the morphology and size of magnetite nanocrystals synthesized by ultrasonic irradiation

Two‐dimensional plate‐like Fe₃O₄ nanocrystals and nanoparticles could be synthesized by a simple one‐step sonochemical method through ultrasonic irradiation in reverse co‐precipitation solution at low temperature. This technique provided a facile and rapid way to prepare Fe₃O₄nanocrystals with different morphology and size. Magnetite nanoplates were synthesized with only ferrous salt adding into alkali solution, and adding ferric ions with low molar ratio in the metal salts solution would lead to the formation of very small magnetite nanoparticles (∼10 nm). The size of as‐prepared magnetite nanoparticles increased with increasing reaction temperature and showed narrow size distribution, the standard deviation less than 2 nm. This investigation indicated that ferric ions had significant influence on the morphology of Fe₃O₄ nanocrystals. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Experimental analysis of Mn segregation in Bridgman‐grown gallium antimonide: Dependency on the ampoule radius

This work considered the segregation of manganese in vertical Bridgman‐grown GaSb crystals for different ampoule diameters. Experimental data of the impurity distribution were obtained from atomic absorption spectrometry and also Hall measurements. It was demonstrated that the radial segregation is more pronounced in the case of thick ampoule diameters. Furthermore the manganese effective segregation coefficient, resistivity, carrier mobility and density were obtained in each case. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric Spectroscopy of Ferronematics Based on 6CHBT Liquid Crystal

In our study, the dielectric behaviour of the rod-like liquid crystal (6CHBT) doped with magnetic nanoparticles of spherical shape was investigated by means of dielectric spectroscopy in the frequency range from 20 Hz to 2 MHz. A low frequency dielectric dispersion in the nematic and isotropic phases of the pure liquid crystal (LC) has been assigned to the space charge polarization. After doping the host LC with the magnetic nano particles, a nearly Debye-like relaxation process was observed with the temperature dependence obeying the Arrhenius law. Considering a possible electric double layer formation on the particle surfaces, the detected relaxation process in the doped LC can be associated with the electric double layer polarization. The experimental results point out that in the measured frequency range the space charge and interfacial effects constitute the main dielectric response. Any anchoring effects were not observed and are therefore expected to appear in higher frequencies.     

Sm、Co共掺杂对BiFeO3陶瓷漏电流和铁磁特性的影响

采用快速液相烧结法制备Bi0.95 Sm0.05Fe1-x Cox O3(x=0、0.05、0.1)陶瓷样品,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、振动样品磁强计(VSM)对其结构、形貌和磁性进行了测量与分析.结果表明:所有样品的主衍射峰与纯相BiFeO3相吻合且具有良好的晶体结构,样品晶粒的大小随着Sm3+、Co3+掺杂而变小,其晶粒尺寸在1～5 μm; Sm3+、Co3+共掺杂有效地减小BiFeO3陶瓷的漏导电流,漏导电流密度下降1～2个数量级;所有样品在磁场为1000 Oe作用下具有完整的的磁滞回线,呈显出较弱的铁磁性.随着掺杂量x的增加,样品的铁磁性显著提高.当x为0.1时,样品具有较好的的铁磁特性.这可以理解为Sm3+、Co3+的掺杂,破坏BiFeO3样品中原有的反铁磁结构,形成一种新的亚铁磁结构,导致掺杂Co3+的样品磁性大幅度增强.     

Fe80.8Si7.2B6Nb5Cu非晶/纳米晶磁粉芯软磁性能研究

采用熔体快淬法制备了Fe80.8Si7.2B6Nb5Cu非晶条带,然后经过退火、研磨、成型、退火等一系列的处理,得到了结构致密的非晶纳米晶双相磁粉芯.研究了不同条件下磁粉芯的微观形貌、磁导率、功率损耗、品质因数等基本性能.研究结果表明: Fe80.8Si7.2B6Nb5Cu非晶纳米晶双相磁粉芯具有较高磁导率(36~37) ,且在不同的频率和磁场下比较稳定;低频下(小于200 kHz),当磁场小于50 mT时,其功率损耗最大值仅为49.42 W/kg;同时,有着较好的品质因数.     

Epitaxial growth of magnetic semiconductor EuO on silicon by molecular beam epitaxy

Functional oxides demonstrate a wide range of magnetic, optical and transport properties. Their integration with silicon promises significant advances in electronics. An important key in enabling brand‐new oxide technologies is the utilization of silicon/oxide epitaxy, thus making quality of the interface a critical issue. The progress depends on our ability to avoid formation of impurity phases at the interface and to tackle structural mismatch of the oxide and Si. We design a novel chemical protection of Si (001) surface on the submonolayer scale based on the surface metal silicide with the (1×5) reconstruction. This new technique is applied to the long‐standing problem of integration of a ferromagnetic semiconductor with Si. Direct epitaxial growth of EuO on Si without any buffer layer, so far inaccessible, is achieved by molecular beam epitaxy. The nucleation step, comprising first 10 monolayers of EuO, is followed by a distillation‐controlled growth. An alternative to standard capping procedures for EuO, based on controlled formation of an amorphous Eu₂O₃ layer, is devised. Crystal perfection of the films is established ex situ by x‐ray diffraction and Rutherford backscattering. Magnetic properties of the EuO films match those of the bulk.