光控液晶光子晶体微腔全光开关

设计了一种缺陷模迁移光子晶体微腔全光开关. 两条二维三角晶格空气孔光子晶体波导由一个光子晶体微腔连接, 在微腔的点缺陷中填充掺有少量偶氮聚合物的苯乙炔类液晶. 通过调节控制光的偏振态, 使偶氮聚合物发生顺-反异构化反应, 带动液晶分子重新取向, 从而改变光子晶体微腔的谐振波长, 进而实现光的通过与截止. 运用时域有限差分法和平面波展开法分析 了二维光控液晶光子晶体微腔全光开关的光学特性. 数值计算结果表明: 对于1.55 μ通信波段通过外界偏振光控制所填充的向列相液晶 的折射率可以实现对光波的导通与截止. 分析结果显示, 此开关具有阈值低, 消光比较大, 体积小等优点. 关键词： 二维光子晶体微腔 波导 时域有限差分(FDTD) 液晶     

光子晶体四信道波分复用器的研究

提出了一种由2-D光子晶体构成的四信道波分复用系统。该系统包括利用光子晶体的线缺陷实现的波导部分和利用光子晶体微腔实现的频率选择部分。采用时域有限差分(FDTD)方法,研究了光在含点缺陷(即微腔)和线缺陷(即波导)的光子晶体中的传输特性,并给出了仿真结果。计算结果表明,该结构可以实现波长为λ=1550nm附近的四信道波分复用。     

二维三角晶格光子晶体波导的出射光集束传播

为了解决光子晶体波导出射端光场控制, 同时解决二维三角晶格光子晶体波导出射光辐射困难的问题。利用二维三角晶格光子晶体设计了一种新型光子晶体波导出射口结构。在二维三角晶格光子晶体波导出射端引入两个微腔, 通过光波与微腔发生共振, 形成类似于三个点光源干涉的出射光, 同时进一步提出波导出射端喇叭口干涉出射光定向辐射的设计。通过这种微腔喇叭口设计, 利用时域有限差分法分析结果表明光波实现很好的定向辐射, 并且辐射距离显著提高。     

二维光子晶体六通道波分复用器的透射谱

设计了一种由微米尺度二维光子晶体构成的六通道波分复用系统。该系统包括利用光子晶体线缺陷实现的波导部分和利用光子晶体微腔实现的频率选择部分。采用时域有限差分方法（FDTD）,研究光在该系统中的传输特性。     

光子晶体滤波特性分析

采用时域有限差分(FDTD)方法,研究光在含点缺陷(即微腔)和线缺陷(即波导)的光子晶体中的传输特性.计算结果表明,处于光子晶体禁带的光能被局域在光子晶体波导中传输.而具有特定本征共振频率的光子晶体微腔可将在其附近波导中传播的相应频率成份的光下载到微腔中,不同结构的腔可以“下载”不同频率成份的波.以上计算结果,可用于光子晶体上/下载滤波器的设计.     

光子晶体集成光电子器件

文章简要介绍了利用光子晶体实现微纳尺度上光调控的物理原理和工作机制,重点讨论了如何利用光子晶体的缺陷态实现微纳尺度的各种集成光电子器件,并结合文章作者所在研究组的研究工作经验,简单回顾了各种类型的集成光电子器件的工作原理、物理实现和光学特性.     

液晶调制光子晶体微腔光衰减器

设计了一种二维液晶调制光子晶体微腔光衰减器。两条二维三角晶格空气孔光子晶体波导由一个光子晶体微腔连接,在微腔的点缺陷中填充苯乙炔类液晶。通过施加不同电压,电场诱导液晶取向以改变液晶的折射率,从而改变光子晶体微腔的谐振波长,进而实现光传播强度调节。运用时域有限差分方法和平面波展开法分析了二维液晶调制光子晶体微腔光衰减器的光学特性。数值计算结果表明:对于1.55μm通信波段,通过外界电场控制所填充的向列相液晶的方向可以对这种二维液晶调制光子晶体微腔光衰减器实现3.40%～99.58%的可调谐光输出。     

基于光子晶体共振耦合的四波长波分复用/解复用器

谐振腔因其具有选频功能而在集成光学领域具有广泛的应用. 通过两个光子晶体环形腔、四个不同尺寸的光子晶体微腔及波导之间的耦合, 实现了1310 nm, 1550 nm, 1600 nm和1650 nm 四个波长的波分解复用．时域有限差分法模拟分析的结果表明, 仅仅通过调制输出波导边缘介质柱的半径, 即可使四个波长的输出效率均达到90%以上. 所设计的器件不但效率高, 而且尺寸小(约为12 μ m× 17 μ m), 在未来的光通信领域中具有潜在的应用价值.     

基于光子晶体微腔的回波光量子存储

充分发掘量子计算机的应用潜力需要将大量分立的量子节点连接起来,组建一个与互联网类似的全量子网络.高性能的可集成光量子存储器是解决不同量子节点间信号同步问题的核心器件,直接关系到量子网络的实现规模和整体性能.然而,目前的微纳量子存储器还存在可集成性和存储性能难以兼容的问题,还不能满足构建全量子网络的需求.本文提出在掺铒硅材料上设计通信波段的光子晶体微腔,不仅可利用光学微腔的角动量共振模式来实现基于光子回波的量子存储,还可利用光学微腔来增强光和物质相互作用,有望实现高存储效率的可集成量子存储器.     

基于六角格子光子晶体波导的高效全光二极管设计

提出了一种基于六角格子光子晶体波导微腔和Fabry-Perot(FP)腔非对称耦合的全光二极管结构, 它由一个包含非线性Kerr介质的高Q值微腔与一个光子晶体波导中的FP腔组成. 通过有限时域差分方法对其传输特性进行了仿真, 发现通过两腔的非对称耦合可以实现在特定光强度下的正向传输、反向截止的功能. 在靠近微腔方向光入射时, 特定强度的光可以激发非线性微腔的Kerr效应, 改变了Fano腔的共振频率, 从而变成透射状态. 而远离微腔方向光入射, 由于这个不对称的结构造成场局域的分布不对称, 激发微腔Kerr效应的光强还不够, 所以光不能透射. 所设计的全光二极管结构具有良好的性能参数: 最大透射率高和高透射比、光强阈值低和易于集成等.     

中红外完全带隙Si反蛋白石光子晶体的制备与光学性能研究

通过溶剂蒸发对流自组装法制备SiO2胶体晶体,采用低压化学气相沉积法填充Si,制备得到Si反蛋白石(opal)三维光子晶体.采用扫描电子显微镜对Si反opal的显微形貌进行表征,采用平面波展开法理论模拟Si反opal的光子带隙,采用傅里叶变换红外光谱仪测试其光学性能.研究结果表明:Si在SiO2微球空隙内填充致密均匀,显微红外光谱测试的光子带隙反射峰位置及带宽与理论计算基本符合.变角度反射光谱测试表明,Si反opal沿不同角度入射时在中心波长3319nm处均存在明显的反射峰,证明其具有完全光子带隙,带隙位于中红外大气窗口区域.     

带多孔硅表面缺陷腔的半无限光子晶体Tamm态及其折射率传感机理

结合表面缺陷半无限光子晶体Tamm态与多孔硅光学传感机理,在光子晶体表面缺陷腔中引入多孔硅,并利用其高效的承载机制,提出基于多孔硅表面缺陷光子晶体Tamm态的折射率传感结构.在半无限光子晶体中缺陷腔与原来的周期性分层介质结构的界面上存在Tamm态,通过入射角度调制使其在缺陷腔中实现多次全反射,并在缺陷腔中加入吸收介质,使谐振波长在缺陷腔中完成衰荡,从而在反射谱中得到缺陷峰;调整光子晶体参数,使缺陷峰的半高全宽得到优化,提高其品质因数(Q值);在此基础上,根据Goos-H?nchen相位移与谐振波长的关系,建立由待测样本折射率改变所导致的多孔硅表面吸附层有效折射率变化与缺陷峰值波长漂移之间的关系模型,并分析其折射率传感特性.结果表明,此生物传感结构Q值为1429,灵敏度为546.67 nm/RIU,证明了该传感结构的有效性,可为高Q值和高灵敏度折射率传感器的设计提供一定的理论参考.     

Study on the thermal isolation properties of porous silicon photonic crystal

The thermal isolation properties of porous silicon photonic crystal structures have been designed and discussed theoretically. Excellent thermal isolation properties can be obtained on such a porous silicon photonic crystal, even better than that of porous silicon with high porosity. Due to the excellent thermal isolation properties of the porous silicon photonic crystal structures, they can be used as the thermal isolation substrates in infrared detectors     

Mid infrared band gap properties of 3-dimensional silicon inverse opal photonic crystal

By the solvent vaporization convection self-assembly method, 1.86 μm silica microspheres were assembled into a colloidal crystal template with long-range order. High refractive index silicon was then filled in the voids of the silica template by the low pressure chemical vapor deposition method. A 3-dimensional silicon inverse opal photonic crystal was obtained with a photonic band gap simulated by a plane wave expansion method. Its micro modality and photonic band gap properties were characterized by scanning electron microscopy and Fourier transform IR spectrometer. There was a good agreement between the measured spectra and the simulated results. The tilt-angle reflectance spectra showed that an obvious reflection peak at 3319 nm stayed in existence with different incidence directions. This result proved that silicon inverse opal has a complete photonic band gap in the mid infrared range. This study opens up an opportunity to create Si-based photonic crystal devices for atmosphere mid infrared photodetection.     

Silicon-based two-dimensional photonic crystal waveguides

A review of the properties of silicon-based two-dimensional (2D) photonic crystals is given, essentially infinite 2D photonic crystals made from macroporous silicon and photonic crystal slabs based on silicon-on-insulator basis. We discuss the bulk photonic crystal properties with particular attention to the light cone and its impact on the band structure. The application for wave guiding is discussed for both material systems, and compared to classical waveguides based on index-guiding. Losses of resonant waveguide modes above the light line are discussed in detail.     

Beam focusing upon the reflection from crystals and multilayer periodic structures with variable period

The experimental spectral dependence of the intensity of the second harmonic (SH) generated in microcavities based on porous silicon photonic crystal demonstrates resonant intensity enhancement (by a factor of ～2×10²) in the vicinity of the cavity mode and at the edges of the photonic band gap. The enhancement is due to the combined effect of pump radiation localization inside the microcavity, multiple SH interference in the photonic crystal, and two-photon resonance of the porous silicon quadratic susceptibility at the SH frequency.     

Enhanced third harmonic reflection and diffraction in Silicon on Insulator photonic waveguides

Enhanced third harmonic (TH) generation from Silicon-On-Insulator (SOI) planar waveguides as well as SOI photonic crystal (PhC) slabs is studied in different angular configurations, both in the visible and infrared energy ranges. In the SOI planar waveguide, the multilayer structure causes the optical properties such as TH reflection to be different from those of bulk silicon samples. This behavior is well reproduced by calculations of TH reflectance.Measurements of third-harmonic reflection and diffraction from one-dimensional PhC slabs etched in the SOI waveguide are also reported. The angular positions of TH peaks at various diffraction orders agree well with those calculated from a nonlinear grating equation. Both reflection and diffraction processes contribute to enhanced TH generation efficiency in the PhC slabs.TH reflectance measurements performed on PhC slabs in the near infrared show a resonant interaction between the incident beam and the photonic structure, dependent on the angle of incidence. This leads to a nonlinear conversion efficiency which is strongly enhanced with respect to that of the SOI waveguide, due to the excitation of strong local fields associated with the presence of photonic modes in the PhC slab.     

Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing

We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.     

Giant third-harmonic in porous silicon photonic crystals and microcavities

A giant enhancement (no less than by 10³) of the optical third-harmonic generation in one-dimensional porous silicon microcavities and photonic crystals was observed experimentally. The enhancement is due to the resonant enhancement of the fundamental field in the cavity mode and the fulfillment of the phase matching condition at the photonic band gap edges of the photonic crystal and in the vicinity of the microcavity mode.     

Nanofluidic tuning of photonic crystal circuits

By integrating soft-lithography-based nanofluidics with silicon nanophotonics, we demonstrate dynamic, liquid-based addressing and high deltan/n (approximately 0.1) refractive index modulation of individual features within photonic structures at subwavelength length scales. We show ultracompact tunable spectral filtering through nanofluidic targeting of a single row of holes within a planar photonic crystal. We accomplished this with an optofluidic integration architecture comprising a nanophotonic layer, a nanofluidic delivery structure, and a microfluidic control engine. Variants of this technique could enable dynamic reconfiguration of photonic circuits, selective introduction of optical nonlinearities, or delivery of single molecules into resonant cavities for biodetection.