Optical properties of He+-implanted and diamond blade-diced terbium gallium garnet crystal planar and ridge waveguides

Terbium gallium garnet (Tb₃Ga₅O₁₂, TGG) crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect. In this work, 400-keV He⁺ ions with a fluence of 6.0×10¹⁶ ions/cm² are irradiated into the TGG crystal for the planar waveguide formation. The precise diamond blade dicing with a rotation speed of 2×10⁴ rpm and a cutting velocity of 0.1 mm/s is performed on the He⁺-implanted TGG planar waveguide for the ridge structure. The dark-mode spectrum of the He⁺-implanted TGG planar waveguide is measured by the prism-coupling method, thereby obtaining the relationship between the reflected light intensity and the effective refractive index. The refractive index profile of the planar waveguide is reconstructed by the reflectivity calculation method. The near-field light intensity distribution of the planar waveguide and the ridge waveguide are recorded by the end-face coupling method. The He⁺-implanted and diamond blade-diced TGG crystal planar and ridge waveguides are promising candidates for integrated magneto-optical devices.     

Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation

We report the fabrication of a planar waveguide in the Nd:Bi_(12)SiO_(20) crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric(TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi_(12)SiO_(20) crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi_(12)SiO_(20) crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi_(12)SiO_(20) crystal.     

Refractive index profiles of ion implanted waveguides in thulium sodium yttrium tungstate

Planar waveguides were first formed in thulium sodium yttrium tungstate (Tm:NaY(WO₄)₂) crystals by the implantation of MeV He, P and Ni ions with certain doses at room temperature, respectively. The refractive index profiles of the three ion implanted waveguides were found different to some extent. The present data show that He⁺ ion implanted waveguides in Tm:NaY(WO₄)₂ should be the typical barrier type one, while a combination of radiation damage and radiation enhanced diffusion may be responsible for the refractive index profiles of the MeV Ni⁺ and P⁺ ion implanted waveguides in Tm:NaY(WO₄)₂.     

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet(Nd:CNGG) crystal are reported. The waveguide is produced by proton(H~+) implantation at 480 ke V and a fluence of 1.0×10~(17) ions/cm~2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8nm. The reflectivity calculation method(RCM) is used to reconstruct the refractive index profile. The finite-difference beam propagation method(FD-BPM) is employed to calculate the guided mode profile of the waveguide.The stopping and range of ions in matter 2010(SRIM 2010) code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.     

Double optical waveguide in Cu-doped KNSBN crystal formed by MeV boron ion implantation

We reported for what is to be believed the first time a double optical waveguide in a Cu-doped potassium sodium strontium barium niobate (KNSBN) crystal formed by double boron ion implantation. The energy and dose of B⁺ and B³⁺ ions were (3+6) MeV and (2+2)×10¹⁴ ions/cm², respectively. The refractive index profile of the waveguide showed a double-barrier confined shape, which suggested the formation of a two-layer waveguide structure. The two waveguide layers were with thickness of 2.6 and 2 μm, respectively, which was in a good agreement with the parameters obtained from transport and range of ions in matter 98 (TRIM) code simulation. The nuclear energy loss distribution of the MeV B ions implanted into this crystal had a similar shape to that of the waveguide index profile, which means an inherent relationship between the waveguide formation and the energetic energy deposition.     

Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO₂ upper cladding and a 5.0μm SiO₂ lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.     

TE0导模干涉刻写周期可调亚波长光栅理论研究

通过棱镜耦合激发非对称金属包覆介质波导结构中的TE₀导波模式, 利用两束TE₀模的干涉从理论上实现了周期可调的亚波长光栅刻写. 分析了TE₀模式的色散关系, 刻写亚波长光栅的周期与激发光源、棱镜折射率、光刻胶薄膜厚度及折射率之间的关系. 用有限元方法数值模拟了金属薄膜、光刻胶薄膜和空气多层结构中TE₀导模的干涉场分布. 研究发现, 激发光源波长越短, TE₀ 模干涉刻写的亚波长光栅周期越小; 光刻胶越厚, 刻写的亚波长光栅周期越小; 高折射率光刻胶有利于更小周期亚波长光栅的刻写. 相较于表面等离子体干涉光刻, 基于TE₀ 模的干涉可在厚光刻胶条件下通过改变激发光源、棱镜折射率、光刻胶材料折射率、特别是光刻胶薄膜的厚度等多种方式实现对亚波长光栅周期的有效调控.     

过冷水溶液中的空间光孤子

建立了在过冷水溶液中传播的光束的非局域非线性模型.过冷水的热致折射率扰动在温度扰动较小的情况下随温度增大,但在温度扰动达到一定程度后随温度减小.在求出该模型的数值孤子解后,对孤子的性态进行了研究.研究表明,在光功率较小时,过冷水表现出自聚焦的特性,而在光功率较大时,在孤子的中心区域的过冷水表现出自散焦的特性,而在孤子的外围仍表现为自聚焦.在总功率较大的情况下,孤子间的相互作用也表现出这种部分自散焦,部分自聚焦的现象.     

Measurement of electro-optic coefficients of low symmetry crystal GdCa4O(BO3)3

In this paper, we report all of the electro-optic coefficients of the low symmetry crystal GdCa₄O(BO₃)₃ measured by the interferometric method. The new sample orientations, which have not been reported so far, have been used for measuring the skew electro-optic coefficients γ₅₁, γ₅₃, γ₄₂ and γ₆₂ independently. The results obtained are γ₁₁=0.4, γ₂₁=0.5, γ₃₁=0.6, γ₁₃=0.1, γ₂₃=0.4, γ₃₃=2.0, γ₅₁=0.7, γ₅₃=1.5, γ₄₂=0.5, γ₆₂=0.8×10⁻¹²m/V.     

添加Fe(C5H5)2合成氢掺杂金刚石大单晶及其表征

在Ni₇₀Mn₂₅Co₅-C体系中添加含氢化合物Fe(C₅H₅)₂作为新型氢源, 利用温度梯度法, 在压力为5.5-6.0 GPa、温度为1280-1400 ℃的条件下, 成功合成出氢掺杂的宝石级金刚石大单晶. 通过傅里叶显微红外光谱发现, 随着Fe(C₅H₅)₂添加量的增加, 合成晶体中与氢相关的对应于sp³杂化C-H键的对称伸缩振动和反对称伸缩振动的红外特征峰2850和2920 cm^-1逐渐增强, 而晶体中氮含量却逐渐减少. 通过合成晶体的拉曼光谱分析发现, 金刚石的拉曼峰伴随Fe(C₅H₅)₂的添加向高频偏移, 这表明氢的进入在金刚石内部产生了压应力. 观察扫描电子显微镜图像发现, 在低含量Fe(C₅H₅)₂添加时晶体表面平滑, 而高含量添加时晶体表面缺陷增多, 且呈现出气孔状. 使用新的添加剂Fe(C₅H₅)₂作为氢源, 合成出含氢宝石级金刚石单晶, 丰富了金刚石单晶中对氢的研究内容, 也可为理解天然金刚石的形成机理提供帮助.     

In2O3晶体电子结构和光吸收机理研究

为了得到准确的In₂O₃晶体电子结构, 本文分别采用GGA, GGA+U, HSE06的方法计算了电子结构, 并进行了G₀W₀修正, 通过比较计算结果, 得到HSE06+G₀W₀方法计算得到的禁带宽带最接近实验结果. 在此基础上使用Hedin的G₀W₀近似方法和Bethe-Salpeter方程计算得到了In₂O₃晶体的光学性质, 计算结果与实验结果吻合很好, 在此基础上通过对准粒子能带结构、光学跃迁矩阵和光学吸收谱的分析, 给出了In₂O₃晶体的光学跃迁机理.     

具有生物活性钼钨仿生配合物与ATP作用的NMR研究

在常温下合成了以邻苯二酚为配体,分别以乙二胺、1,2-丙二胺、1,3-丙二胺为抗衡离子的7种手性钼钨八面体配合物(NH2CH2CH2NH3)3[Mo(V)O2(OC6H4O)2](1),(NH2CH2CH2NH3)2[W(VI)O2(OC6H4O)2](2),(NH2CH2CH2NH3)2.5[Mo(V)0.5W(VI)0.5O2(O2C6H4)]2](3),(NH3CH2CHNH2CH3)3[Mo(V)O2(OC6H4O)2](4),(NH3CH2CHNH2CH3)2[W(VI)O2(OC6H4O)2](5),(NH3CH2CHNH2CH3)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](6),(NH3CH2CH2CH3NH2)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](7),并在生理条件下对其与ATP的相互作用进行了液体NMR研究,发现标题配合物的中心金属离子在纯D2O溶剂中大多数以+5价形式存在,W(VI)被还原为W(V),但与ATP混合后又转化为+6价,配合物原有的顺磁性特征完全消失.研究还发现ATP可以促进中心离子与原配体发生解离.     

非线性一维光子晶体波导光双稳

利用非线性折射率系数较大且非线性时间响应较快的CdS_xSe_1-x玻璃为材料,设计并制备了非线性一维光子晶体波导光双稳器件,该器件的折射率空间分布呈正弦形式。实验测得双稳开关的阈值功率密度为1.60×10⁵W/cm²,开关时间为63ps。采用时域有限差分方法讨论了光子晶体带隙随入射光强变化而移动的情况,随着入射光功率密度的增加,光子晶体的带隙中心向短波方向移动。同时计算了该器件的双稳特性,理论计算得到双稳开关的阈值功率密度为1.40×10⁵W/cm²,开关时间约为50ps。获得了理论与实验基本一致的结果。     

Synthesis and properties of a new copper(II)-hafnium phosphate Cu0.5Hf2(PO4)3

Phosphates of general formula M_0.5Hf₂(PO₄)₃ with M=Cd²⁺, Ca²⁺, Sr²⁺ and Cu²⁺ were prepared by coprecipitation and characterized by several physical techniques. The compounds containing Cd²⁺, Ca²⁺, Sr²⁺ belong to the Nasicon-type structure, whereas Cu_0.5Hf₂(PO₄)₃ exhibited substantially different DRX patterns. Combined temperature programmed reduction (TPR) and temperature-programmed oxidation (TPO) showed that the copper in Cu_0.5Hf₂(PO₄)₃ was distributed between two energetically different sites in proportions respectively equal to 40 and 60%. Electron Paramagnetic Resonance (EPR) investigations confirmed the TPR/TPO results and revealed that the two sites hosting the Cu²⁺ ions are of orthorhombic symmetry. Moreover, the Cu²⁺ ions might be reduced by hydrogen to Cu⁺. These results were also supported by the UV–visible studies that showed the disappearance, under reducing conditions, of the band corresponding to crystal field transitions of Cu²⁺ ions and the emergence of a new peak attributed to the transitions between (3d)¹⁰ and (3d)⁹(4s)¹ Cu⁺ levels. At the same time, IR spectroscopy confirmed that protons entered the open lattice framework of the material and gave rise to a new protonated phase containing monovalent copper Cu_0.5^IH_0.5Hf₂(PO₄)₃. This redox process was proven to be reversible without any subsequent change in the network of the phosphate.     

自准直法测GdTaO4晶体折射率

本文利用自准直法在473, 532, 632.8和1064 nm的激光波长上精确地测量出GdTaO₄晶体的折射率, 得到了Sellmeier方程, 并计算了在632 nm处光轴与折射率主轴n_z的夹角为21.75°, 进而得知GdTaO₄晶体是正光性双轴晶体.     

平面环形谐振腔微光学陀螺结构设计与优化

提出具有高群有效折射率的双环级联作为核心元件的谐振式平面光波导陀螺结构, 基于光学Sagnac原理得到了双微环耦合谐振式光学陀螺理论灵敏度与群有效折射率的一般表达式和双环与单环陀螺系统的灵敏度关系, 并由耦合模理论方法得到了双环系统耦合器的两个透射系数对应的群有效折射率变化情况. 在环腔半径R₁=R₂=100 μm、环腔传输损耗系数t₁=t₂=0.95的情况下, 针对环与环之间耦合器和环与波导之间耦合器透射系数对群有效折射率的不同影响, 得到了最大群有效折射率的产生条件. 采用文中参数(R=100 μm, t=0.95)计算的单环谐振式陀螺灵敏度为(10⁴-10⁵)°/h, 而双环级联谐振系统理论灵敏度能够达到10 °/h. 该研究对微环耦合谐振腔在角速度检测上的应用有重要的意义.     

碘酸镁晶体的结构与相变

本文用差热分析、高温和室温X射线衍射分析等方法研究了Mg(IO₃)₂·4H₂O的相变过程: Mg(IO₃)₂·4H₂O晶体属单斜晶系,空间群为P2或Pm,每个晶胞含有两个化合式量,点阵常数为a=8.307?,b=6.627?,c=8.541?,β=1.00°45′。我们用X射线粉末法测定了α-Mg(IO₃)₂的晶体结构。α-Mg(IO₃)₂属六角晶系,其空间群是P6₃。在14℃的点阵参数为a=5.4777?,c=5.1282?,c/a=0.9362。每个单胞含一个化合式量,6O^II占据在6(c)等效位置上,21^V占据在2(b)等效位置上,Mg⁺⁺无序地占据着2(a)等效位置的一半。其原子参数为x_c=0.096,y_c=0.344,z_c=0.162,z_b=0,z_a=0.981。从结构来看,它与α-LiIO₃同晶型,所不同的是2(a)位置只有一半被Mg⁺⁺离子占据着,另一半为空位。 关键词：     

Characterization of optical waveguides in β-BaB2O4 crystals formed by 3.0 MeV Ni ions implantation

We report on the optical planar waveguides formation and modal characterization in β-BaB₂O₄ crystals by Ni²⁺ ion implantation at energy of 3.0 MeV and doses of 10¹⁴ ions/cm². The prism coupling method was used to investigate the dark-mode property at wavelengths of 633 nm and 1539 nm, respectively. The refractive index profiles of the waveguides with different doses were reconstructed by an effective refractive index method based on the reflectivity calculation method (RCM). The modal analysis indicates that the fields of TM modes can be well restricted in the guiding region, which means the formation of non-leaky waveguide in the crystal.     

铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_1-x)_0.4(Sr_yBa_1-y)_0.8Nb₂O₆的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n₀³·γ_c高达730×10 关键词：     

Nonlinear optical characterization of phosphate glasses based on ZnO using the Z-scan technique

The nonlinear optical properties of a phosphate vitreous system [(ZnO)_x-(MgO)_30-x-(P₂ O₅)₇₀], where x=8, 10, 15, 18, and 20 mol% synthesized through the melt-quenching technique have been investigated by using the Z-scan technique. In the experiment, a continuous-wave laser with a wavelength of 405 nm was utilized to determine the sign and value of the nonlinear refractive (NLR) index and the absorption coefficient with closed and opened apertures of the Z-scan setup. The NLR index was found to increase with the ZnO concentration in the glass samples by an order of 10^-10 cm²·W^-1. The real and imaginary parts of the third-order nonlinear susceptibility were calculated by referring to the NLR index (n₂) and absorption coefficient (β) of the samples. The value of the third-order nonlinear susceptibility was presented by nonlinear refractive or absorptive behavior of phosphate glasses for proper utilization in nonlinear optical devices. Based on the measurement, the positive sign of the NLR index shows a self-focusing phenomenon. The figures of merit for each sample were calculated to judge the potential of phosphate glasses for application in optical switching.