辉光放电质谱法在无机非金属材料分析中的应用

辉光放电质谱法(GDMS)作为一种固体样品直接分析技术,已广泛应用于金属、半导体等材料的痕量和超痕量杂质分析。近年来,随着制样方法和离子源装置的改进,GDMS同样也能很好地应用于玻璃、陶瓷、氧化物粉末等非导体材料的成分分析。简介了GDMS的基本原理和分析特点,概述了GDMS在无机非金属材料分析的方法以及应用情况。     

辉光放电质谱法测定高纯材料中痕量硫杂质

准确测定并控制材料中杂质元素含量是发挥高纯材料性能不可或缺的环节。辉光放电质谱法(GDMS)是准确、快速、高灵敏分析高纯材料中痕量及超痕量硫的理想方法。对GDMS分析高纯铜和镍基高温合金中痕量硫的质谱干扰进行了讨论,优化了放电电流和放电电压,采用多种标准物质对硫的相对灵敏度因子(RSF)进行了校准和验证,并与二次离子质谱法(SIMS)进行分析结果比对,验证了GDMS定量分析结果的准确性和可靠性。     

辉光放电质谱测量中的相对灵敏度因子研究

辉光放电质谱(GDMS)作为高纯金属和半导体材料分析的强有力工具在国内已得到了大量应用,该文简要介绍了GDMS的基本原理和国内外应用现状,对仪器测量条件的选择、测量重复性进行了详细研究,对于含量在1 mg/kg左右的杂质,测量的重复性将产生约1%～5%的不确定度;对不同金属基体的系列标准物质进行对比研究,发现对于基体相同的样品,杂质元素在较宽的浓度范围内可以使用同样的校正系数进行校正,大部分元素的线性相关系数达到0.999以上,但对于不同基体的样品,测量中仍存在明显的基体效应,一些元素,尤其是轻质量数元素的相对灵敏度因子(RSF)设定值存在较大的偏差,并不适合定量分析,但绝大部分不超过2倍误差,可以满足半定量分析的要求。通过对GDMS定量分析中关键因素的研究,认为相对灵敏度因子的校正是GDMS测量结果可溯源性的关键。     

辉光放电质谱法测定超高纯铜溅射靶材中痕量杂质元素及其相对灵敏度因子的求取北大核心CSCD

通过选择合适的同位素及分辨率,提出了辉光放电质谱法(GDMS)测定超高纯铜溅射靶材中39种痕量杂质元素的分析方法。对辉光放电过程中的参数进行了优化,条件如下:放电气体流量为450 mL·min^(-1),放电电流为2.00 mA,预溅射时间为20 min。由于高纯铜的GDMS标准样品极难获得,为提高痕量杂质元素的检测准确度,在现有的标准样品条件下,利用高纯铜标准样品只获得了与基体匹配的21种杂质元素的相对灵敏度因子(RSF),其余18种杂质元素的RSF只能按照仪器自带的标准RSF进行计算。参照美国材料与试验协会的标准ASTM F1593-08(2016)的TypeⅢ中的第2种方法计算33种杂质元素的检出限,而其他6种主要杂质元素因其含量高于仪器噪声水平而无法用此法得到检出限。用GDMS对超高纯铜溅射靶材样品进行了检测,主要杂质元素为硅、磷、硫、氯、铁、银,检出量为0.015~0.082μg·g^(-1),杂质总量小于1μg·g^(-1)。除锌、碲、金的检出限在10 ng·g^(-1)级外,其余元素的检出限能够达到ng·g^(-1)级,其中钍、铀的检出限甚至达到了0.1 ng·g^(-1)级,说明方法能够满足GB/T 26017-2010中的6N(99.9999%)超高纯铜溅射靶材的检测要求。     

高纯金属的快速分析-强激光溅射电离飞行时间质谱法

随着现代材料行业的发展,高纯金属纯度分析日趋重要。本研究建立了一种基于强激光溅射电离飞行时间质谱（LAI-TOFMS）检测高纯金属纯度新方法。为消除高价离子和多原子离子等干扰峰的影响,在离子源内引入了氦气。通过分析高纯阴极铜的系列标准样品,建立了其中16种痕量元素的固体直接定量分析方法,在4个动态范围内（10-7 – 10-3 μg/g）的线性相关度优于0.97,检出限低至0.1 μg/g。该方法几乎无需样品处理、分析时间短、操作简便、灵敏度高、谱峰干扰小,可用于高纯金属材料纯度及其痕量杂质的快速分析。     

辉光放电质谱法研究高纯氧化铋中19种元素的相对灵敏度因子

采用标准溶液加入法,往高纯氧化铋中加入混合标液,烘干并研磨均匀,制备了5个高纯氧化铋的控制样品。在挑取适量的粉末样品压在高纯铟薄片上,建立了辉光放电质谱法(GDMS)研究高纯氧化铋中的Mg、Al、Ca等19个元素相对灵敏度因子的方法。实验考察了放电参数和制样面积对基体信号强度和稳定性的影响,优化后的辉光放电电流为1.8 mA,放电电压为950 V,压在铟薄片上的高纯氧化铋直径约为6~8 mm。通过选择合适的同位素,在4000的中分辨率下测定即可消除质谱干扰。为了验证加标的准确性,采用电感耦合等离子体质谱仪(ICP-MS)对控制样品进行测定,所有元素的回收率都在80%以上。采用GDMS法测定5个控制样品并结合ICP-MS的测定值建立工作曲线,大部分元素的线性均达到0.995以上;除Al、Ga、Sb外,大部分元素的校准相对灵敏度因子(calRSF)和仪器自带的标准相对灵敏度因子(stdRSF)的比值都在1/2~2之间,说明GDMS的半定量分析不会有数量级的差别。但对于某些需要准确测定纯度的定量分析,则必须采用基体相匹配的RSF值进行校正。     

辉光放电质谱（GDMS）法校正高纯氧化铋中19种元素的相对灵敏度因子

采用标准溶液加入法往高纯氧化铋中加入混合标准溶液,烘干并研磨均匀,制备了5个高纯氧化铋的控制样品。再挑取适量的粉末样品压在高纯铟薄片上,建立了辉光放电质谱(GDMS)法校正高纯氧化铋中的Mg、Al、Ca等19种元素相对灵敏度因子的方法。实验考察了放电参数和制样面积对基体信号强度和稳定性的影响,优化后的辉光放电电流为1.8mA,放电电压为950V,压在铟薄片上的高纯氧化铋直径约为6～8mm。通过选择合适的同位素,在4000的中分辨率下测定即可消除质谱干扰。为了验证加标回收的准确性,采用电感耦合等离子体质谱(ICP-MS)法对控制样品进行测定,所有元素的加标回收率都在80%以上。采用GDMS法测定5个控制样品并结合ICP-MS法的测定值建立工作曲线,大部分元素的线性均达到0.995以上;除Al、Ga、Sb外,大部分元素的校准相对灵敏度因子(calRSF)和仪器自带的标准相对灵敏度因子(stdRSF)的比值都在1/2～2之间,说明GDMS的半定量分析不会有数量级的差别。但对于某些需要准确测定纯度的定量分析,则必须采用基体相匹配的RSF值进行校正。     

辉光放电质谱法测定高纯钛中痕量杂质元素及其相对灵敏度因子校正EI北大核心CSCD

通过选择合适的同位素及分辨率,建立了辉光放电质谱法(GDMS)测定高纯Ti中57种痕量杂质元素的方法。辉光放电过程优化条件为Ar流量500 mL/min,放电电流2.2 mA,预溅射时间30 min。利用高纯Ti标准样品获得了与基体匹配的13种元素的相对灵敏度因子(RSF)值。用建立的方法对高纯Ti溅射靶材样品进行检测,主要杂质元素为Al, Si, S, Cl, V, Cr, Mn, Fe, Ni, Cu, Zr,含量在0.051~2.470μg/g之间,相对标准偏差(RSD)<23%,杂质总量<5μg/g。其中,Ca, Nb元素的检出限为0.5μg/g,其余元素的检出限低至10 ng/g级或1 ng/g级,而且Th, U元素的检出限达到0.1 ng/g。该方法能够满足5N级高纯金属Ti溅射靶材的检测要求。     

辉光放电质谱法测定高纯铟中痕量元素

采用辉光放电质谱法(GDMS)对高纯铟中铁、铜、铅、锌、铊、镉、锡等14种元素进行了测定,对仪器工作参数进行了优化,对预溅射过程时间的确定和质谱干扰的排除进行了讨论,结果表明,GDMS是目前具有足够灵敏度对高纯导电材料进行直接分析的有效手段。     

膜去溶进样高分辨电感耦合等离子体质谱法测定半导体级氢氟酸中杂质元素

利用高分辨电感耦合等离子体质谱法测定半导体级高纯氢氟酸中的痕量金属杂质,用膜去溶进样系统直接进样检测,无需前处理、快速,避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱法可以消除多分子离子干扰,降低检出限,提高定量准确性。方法的检出限为0.09～37.07ng/L,加标回收率为92.3%～116.8%。方法简单,结果可靠,适用于高纯氢氟酸中痕量元素的快速测定。     

On-line coupling of ion chromatography and atomic spectrometry and use of direct graphite furnace atomic absorption spectrometry as new tools for ultra trace determinations in refractory metals

On-line coupling of inductively coupled plasma (ICP) techniques such as ICP-AES and ICP-MS with ion chromatography (IC) offers unique features for ultra-trace analysis. An on-line preconcentration procedure based on cation exchange enables sub-ng/g analysis in complex matrices like molybdenum and tungsten. The best dissolution reagent for these matrices is hydrogen peroxide, which can be cleaned to ultra high purity with the same metal free chromatography equipment used for the preconcentration. Preconcentration is possible for elements that show cationic reactions within acidic peroxide containing solutions. In this study 28 elements detrimental for microelectronics applications are observed. A comparison of the combinations IC-ICP-AES and IC-ICP-MS with glow discharge mass spectrometry (GDMS) for the analysis of today's purest tungsten samples shows the analytical power and accuracy of the coupled devices. Graphite furnace atomic absorption spectrometry (GFAAS) as an extremely sensitive analytical technique is applied with and without the same sample pretreatment as used for the on-line coupling. Direct GFAAS measurements of alkali metals are complementary to IC-ICP techniques. The data evaluated with these wet chemical techniques are compared to the usual manufacturers characterisation technique GDMS. With respect to the low concentrations present in these high purity materials (ng/g level in the solid) the discrepancies between all methods are acceptable. The sensitivity of IC-ICP-MS is in most cases far superior to IC-ICP-AES and for some elements also to GDMS. Furthermore the specific advantages of on-line coupling such as the elimination of isobaric interferences in ICP-MS or spectral interferences in ICP-AES are shown for ICP-AES and ICP-MS determinations.     

High performance analytical characterization of refractory metals

It is first shown what effects trace impurities generally exert on metal properties and why trace analysis is essential to modern applications of refractory metals in today's high technology. The effect of trace impurities in metals on complex systems like microelectronic components is also discussed.It is then shown, what principal analytical requirements are mandatory for trace characterization of refractory metals at levels of rising purity (4 N to 6 N). A survey of analytical methods for trace and ultratrace characterization of refractory metals is given including the following methods: flame and graphite furnace atomic absorption spectrometry, ICP and DCP-atomic emission spectrometry, X-ray fluorescence spectrometry, activation analysis, mass spectrometric methods, especially SIMS and GDMS.     

辉光放电质谱技术应用进展

对辉光放电质谱(GDMS)在金属与半导体、非导体、薄层与深度分析、分子信息分析方面的应用和一些新装置、新方法进行了综述.着重介绍了近20年来我国学者在辉光放电质谱方面的成就,并结合国际上的报道对该领域的发展现状进行了总结.     

3D-SIMS analysis of ultra high purity molybdenum and tungsten: a characterisation of different manufacturing techniques and products

Applying a recently developed three dimensional SIMS imaging technique major differences in the distribution of trace elements in ultra high purity Mo and W have been found. In the electron beam melted material severe grain boundary segregation of trace elements have occurred whereas in the hot pressed material trace elements have been present as precipitates with a size of 5–15 m. Guided by the results of the 3D-SIMS images and the advantages of the sintering process a material with homogeneous distribution of trace elements has been developed and characterised. To test the applicability for the microelectronics industry, sputtering targets have been manufactured out of this new material and layers with a thickness of 350 nm have been sputterdeposited on silicon. The quality of these layers, with respect to particle emission and the distribution of trace elements, was evaluated by EPMA and 3D-SIMS imaging. Further improvement of the sintering process led to a material with a completely homogeneous distribution of C, H, N, O and S to minimise the outgassing and diffusion of impurities.Abbreviations BSE Back scattered electron - EPMA Electron probe micro analysis - GAAS Graphite furnace atomic absorption spectrometry - GDMS Glow discharge mass spectrometry - ICP-AES Inductively coupled plasma atomic emission spectrometry - ICP-MS Inductively coupled plasma mass spectrometry - SIMS Secondary ion mass spectrometry - ULSI Ultra large scale integration     

On-line coupling of atomic spectrometry and ion chromatography with time resolved registration as a new tool for ultra trace analysis in refractory metals

Summary On-line coupling of Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) and Ion Chromatography (IC) offers unique features for ultra trace analysis. With an on-line preconcentration procedure based on cation exchange, sub-ng/g analysis is possible in complex matrices like molybdenum and tungsten. Results match with isotope dilution mass spectrometry (IDMS) and are comparable with glow discharge mass spectrometry (GDMS). The optimal dissolution reagent for these matrices is hydrogen peroxide whose clean up to ultra high purity is possible with metal-free chromatographic equipment. All elements with cationic chemistry can be preconcentrated in acidic peroxide solutions. In this study 21 elements are measured which are detrimental for microelectronic applications. The absolute detection limits of the IC-ICP combination, with time resolved registration, are at the lower ng-level. The reproducibility is not significantly lowered by the coupling, but a ten-fold sensitivity enhancement is observed in comparison to chemically similar off-line trace-matrix-separations. Other features are simultaneous matrix corrections, use of monitors lines for method enhancement, error recognition and correction using time resolved measurement and simple calibration of the method with aqueous standards.     

Characterization of high purity gallium

Multi-step wet analytical procedures were tested on gallium samples of different purity grades. Results obtained were compared with those of spark source mass spectrometry (SSMS) and glow discharge mass spectrometry (GDMS). It was found that multi-step procedures, as applied, with preconcentration factors of 200 are suitable to determine most of the detectable elements in high purity gallium in the ng/g-range. The results thus obtained agree well with those obtained by mass spectrometry. The sensitivity of the multi-step and mass spectrometry methods is not sufficient to detect traces of the investigated elements in super purity gallium, i.e. better than 6 N. These qualities can be differentiated, however, by single crystal resistivity measurement.     

Classical analysis including trace-matrix separation versus solid state mass spectrometry: A comparative study for the analysis of high purity Mo,W and Cr

The applicability of GDMS, SIMS, SSMS, NAA and TMS with AAS, ICP-OES and ICP-MS end determination for routine bulk ultratrace analysis of high purity refractory metals was investigated. Due to the heterogeneous distribution of trace elements in the sub-ppm range, sample consumption and analysis time have a tremendous influence on quantification with procedures of low sample consumption. As an example, GDMS, which is commonly used for ultrapure material certification by most of the manufacturers in Europe and the USA, exhibits discrepancies by more than one order of magnitude for repetitive analyses of a series of trace components in the same sample. Furthermore, results of different laboratories using the same instrument are frequently not comparable. Due to easy standardization and large sample consumption TMS procedures combined with FAAS, GFAAS, ICP-AES and ICP-MS as methods of end determination exhibit better precision and accuracy than GDMS and SIMS. Detection limits are comparably low or even better in case of ICP-MS end determination. TMS procedures are less expensive and less time consuming than highly sophisticated analytical techniques like GDMS, SIMS or NAA. Additionally, they can be easily applied by experienced personnel in a well equipped industrial analytical laboratory.List of Acronyms Used AAS Atomic Absorption Spectrometry - FAAS Flame Atomic Absorption Spectrometry - GDMB Gesellschaft Deutscher Metallhütten- und Bergleute - GDMS Glow Discharge Mass Spectrometry - GFAAS Graphite Furnace Atomic Absorption Spectrometry - ICP-AES Inductively Coupled Plasma Atomic Emission Spectrometry - ICP-MS Inductively Coupled Plasma Mass Spectrometry - IDMS Isotope Dilution Mass Spectrometry - NAA Neutron Activation Analysis - SIMS Secondary Ion Mass Spectrometry - SSMS Spark Source Mass Spectrometry - TMS Trace-Matrix Separation - VLSI Very Large Scale Integration - XRFS X-Ray fluorescence Spectroscopy Dedicated to Professor Günther Tölg on the occasion of his 60th birthday     

Glow discharge mass spectrometry

Over the past twenty years or so, glow discharge mass spectrometry (GDMS) has become the industry standard for the analysis of trace elements in metals and semiconductors. A review of its history is followed by a picture of the present situation and a look to where the future may lie. Applications are summarised, including the ability of GDMS to offer depth-resolved data and non-conductor analysis, and the well-documented quantitative nature of the results is reviewed. The effects resulting from the physical properties of the analyte material are discussed at length. Finally, recent work such as fast flow sources and pulsed glow discharges is reviewed.