Uncertainty study of DS-(D-)→γlν (l=e,μ) decays determined by wave function

Wave function is important for determining decay constants f_DS^- and f_D^-. Using the 5 types of D meson wave functions in the heavy quark limit, we studied the uncertainties of radiative pure-leptonic decays of D_S^-(D^-) mesons. The branching ratios are (1.025390—1.706812) × 10^-5 and (0.953498—1.576725) × 10^-6 for D_S^- and D^- decays, respectively, which are sensitive to the type of wave function.     

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO₂ thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO₂/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×10¹⁷, 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm², then irradiated at RT by 853 MeV Pb ions to 5.0×10¹¹, 1.0×10¹², 2.0×10¹² or 5.0×10¹² ions/cm², respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO₂ films. For examples, 5.0×10¹² Pb-ions/cm² irradiation produced huge blue and green light-emitters in 2.0×10¹⁷ C-ions/cm² implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×10¹⁷ carbon-ions/cm² implanted samples, 2.0×10¹² Pb-ions/cm² irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×10¹² Pb-ions/cm² irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×10¹⁸ carbon-ions/cm² implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO₂-based light-emission materials.     

Raman scattering investigation of C-doped a-SiO_2 after high energy heavy ion irradiations

Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.     

高山宇宙线荷电强子流强的负正比

在海拔3220米的实验室里,用磁谱仪动量予选装置和多板云室,对落在0.23m²面积上的单根荷电强子进行了观测.考虑到各种可能的修正以后,得出在10—20 GeV/c之间,荷电强子的负正比为:N^-/N⁺=0.53±0.05.当认为N⁺只包含有P和π⁺,N^-是π^-,而且N_π+/N_π-=1时,推算出N_π-/N_p=0.9±0.1.若π^-积分谱的形式为j（>p）=Kp^-r,估算出在5—20 GeV/c的动量范围,r（?）2.3.本文也对荷电强子的积分流强作了粗略的估计,其结果是:j_⊥^p+π（>12 GeV/c）=（7.4±0.7）×10^-5cm^-2·st^-1·s^-1.     

Cu100-xZrx金属玻璃压缩率及压力感生晶化现象

 本文采用金刚石对顶压砧高压装置和高压X射线技术测定了两种金属玻璃线压缩率曲线；得到Cu₃₀Zr₇₀和Cu₂₅Zr₇₅的线压缩率分别为2.7×10^-3 GPa^-1和2.3×10^-3 GPa^-1，实验最高压力超过30 GPa。实验过程中首次观察到Cu-Zr金属玻璃在室温下加压发生晶化的现象。     

锰铜压力计的灵敏度

 文中根据K. Yosida对锰铜合金电阻率的理论，认为电阻率和下列各量成比例关系：ρ∝VDS/E_f，式中E_f是电子的费米能，V为导体体积，S为锰离子的自旋，D为交换积分函数。代入计算电阻的公式，求得ΔR/R=ΔD/D－ΔE_f/E_f+ΔS/S+2ΔV/(3V)，然后文中分别求出了上式中后边前三项和ΔV/V的关系，最后利用静力压缩曲线求得ΔR/R和流体静压力p的关系为：ΔR/R₀=2.41×10⁵×p (Pa)，流体动压力关系为：ΔR/R₀=2.8×10⁵×p (Pa)，和实验结果进行了比较，十分符合。     

高压下FexN化合物的相分解

 本文研究了室温下压力对Fe_xN化合物相分解的影响。X射线衍射分析表明，高压促使氮原子从Fe_xN化合物的晶格中脱溶出来，引起相分解，形成母相与α-Fe。这种相分解现象随压力增大而加强。通过分析不同压力下母相Fe_xN与α-Fe的相对含量，研究了氮从Fe_xN中脱溶的动力学过程，并计算出激活体积。对于Fe₃N和Fe₄N化合物，其激活体积分别为2.24×10^-5 m³/mol和1.62×10^-5 m³/mol。本实验还指出，通过对Fe_xN化合物的高压处理以及适当条件下退火，可以获得Fe₁₆N₂化合物。     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

D介子与∑c+重子寿命的宇宙线数据

本文提出一个证认宇宙线中新X粒子的分析原则:筛比较法。对目前全部已知乳胶室事例进行了判定。其中结果有D介子和∑_c⁺重子的平均寿命和质量,τ（D^&;#177;）=5.8×10^-13秒,τ（D⁰）=2.0×10^-13秒,τ（∑_c⁺）（?）2.4×10^-14秒。支持△I=1的选择规则。     

一种层子和轻子的结构模型

提出了一种亚层子模型. 层子和轻子是由rishon T和V组成的. T和V是SU_H(3)×SU_C(3)×SU_G(2)×U(1)群的多重态. 由这些多重态可以自然地得到三代层子和轻子. 在此模型中质子衰变为μ^－e⁺e⁺或e^－μ⁺μ⁺.     

Pure annihilation type decays B0→Ds- K2+ and Bs→Da2 in perturbative QCD approach

We calculate the branching ratios of pure annihilation type decays B⁰→D_s^- K₂^*+ and B_s→Da₂ using the perturbative QCD approach based on k_T factorization. The branching ratios are predicted to be (60.6_{-16.5-10.4-2.1}^{+17.3+4.3+3.2} )× 10^-6 for B⁰→D_s^- K₂^*+, (1.1_-0.4-0.2-0.1^+0.4+0.1+0.1)×10^-6 for B_s→D⁰a₂⁰ and (2.3_-0.8-0.4-0.1^+0.8+0.2+0.1)×10^-6 for B_s→D^-a₂⁺. They are large enough to be measured in the ongoing experiment. Due to the shortage of contributions from penguin operators, there are no direct CP asymmetries for these decays in the Standard Model. We also derive simple relations among these decay channels to reduce theoretical uncertainties for the experiments to test the accuracy of theory and search of new physics signal.     

SiC1-xGex/SiC 异质结光电二极管特性的研究

使用二维器件模拟软件Medici, 对SiC_1-xGe_x/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC_1-xGe_x层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm²的条件下, p-n+ SiC_0.8Ge_0.2/SiC和p-n+ SiC_0.7Ge_0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10^－7 A/μm和7.438×10^－7 A/μm; 为了进一步提高SiC_1-xGe_x/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC_0.8Ge_0.2/SiC和p-i-n SiC_0.7Ge_0.3/SiC的光电流分别达到1.6734×10－6 A/μm和1.844×10－6 A/μm.     

Semileptonic decays Bc→(ηc,J/Ψ)lv in the perturbative QCD approach

In this paper we study the semileptonic decays of B_c^-→(η_c,J/Ψ)l^-v_l. We first evaluate the B_c→(η_c,J/Ψ) transition form factors F₀(q²), F₊(q²), V(q²) and A_0,1,2(q²) by employing the pQCD factorization approach, and then we calculate the branching ratios for all considered semileptonic decays. Based on the numerical results and the phenomenological analysis, we find that: (a) the pQCD predictions for the values of the B_c→η_c and B_c→J/Ψ transition form factors agree well with those obtained by using other methods; (b) the pQCD predictions for the branching ratios of the considered decays are Br(B_c^-→η_c e^-v_e(μ^-v_μ)=(4.41_-1.09^+1.22)×10^-3, Br(B_c^-→η_cτ^-v_τ) =(1.37_-0.34^+0.37)×10^-3, Br(B_c^-→J/Ψ e^-v_e(μ^-v_μ)) =(10.03_-1.18^+1.33)×10^-3, and Br(B_c^-→J/Ψτ^-v_τ) =(2.92_-0.34^+0.40)×10^-3; and (c) we also define and calculate two ratios of the branching ratios R_ηc and R_J/Ψ, which will be tested by LHCb and the forthcoming Super-B experiments.     

对带电轻子质量公式的一些猜测

本文建议轻子电磁自能通过（（δm）/m）=（1/（2π））n^-b 与量子数 n 联系起来,其中 b 为待定常数.并建议动量截断值 M 与引力常数 k 和精细结构常数α的联系为 M=（?）.得到了带电轻子质量公式（?）.利用 e^-和μ^-质量的实验值和α值作输入,给出计算值 k=（6.67231±0.00026）×10^-8 cm³g^-lsec^-2和m_τ=（1782.306±0.078）MeV,与观察值 k=（6.6720±0.0041）×10^-8cm³ g^-1sec^-2和 m_τ=(1782_-4⁺³)MeV 很好符合.公式预言第四个带电轻子质量应为 m=（11725.47±0.51）MeV 可以在最近的实验中检验。本文还对所建议的质量公式和结果进行了讨论.     

Simulation and performance study of ceramic THGEM

THGEMs based on a ceramic substrate have been successfully developed for neutron and single photon detection. The influences on thermal neutron scattering and internal radioactivity of both ceramic and FR-4 substrates were studied and compared. The ceramic THGEMs are homemade, of 200 μm hole diameter, 600 μm pitch, 200 μm thickness, 80 μm rim, and 50 mm×50 mm sensitive area. FR-4 THGEMs with the same geometry were used as a reference. The gas gain, energy resolution and gain stability were measured in different gas mixtures using 5.9 keV X-rays. The maximum gain of a single layer ceramic THGEM reaches 6×10⁴ and 1.5×10⁴ at Ne+CH₄=95:5 and Ar+i-C₄H₁₀=97:3, respectively. The energy resolution is better than 24%. Good gain stability was obtained during a more than 100 hour continuous test in Ar+CO₂=80:20. By using a ²³⁹Pu source, the alpha deposited energy spectrum and gain curve of the ceramic THGEM were measured.     

不等质量(1/2—1/2)或(1/2-1/2)电磁束缚系统的近似B.S.波函数

本文求解了不等质量(1/2—1/2)电磁束缚系统的Bethe-Salpeter方程. 给出了这类系统的近似B.S.波函数. 利用复合粒子量子场论的微扰展开, 在精确到O(α)的量级下, 计算了Ξ⁰→(Σ⁺μ^－)+ν_μ的衰变率和分支比, 结果是wΞ⁰→(Σ⁺μ^－)+ν_μ=1.12(1/秒)R=[wΞ⁰→(Σ⁺μ^－)+ν_μ]/[wΞ⁰→(Σ⁺μ^－)+ν_μ]≥4.7×10^－7. 类似地, 还讨论了Λ→(pμ^－)+ν_μ过程.     

Design of a capacitive main power coupler for RF superconducting accelerators

An updated main coupler has been designed for the superconducting accelerator of Free Electron Laser (FEL) project under construction in Peking University. A capacitive structure is chosen for the main coupler. Numerical investigation using CST Microwave Studio demonstrates the cold window part. The other nonstandard structures such as holding rods and antenna are also optimized. The coupler uses a 95% purity Al₂O₃ ceramic cold window. The VSWR (Vottage Standing Wave Ratio) is 1.02 at 1.3GHz and the frequency bandwidth is 45MHz with VSWR<1.1. The electric field intensity is 8.5×10^－2kV/mm around the window with 20kW Continuous Wave (CW) transmitted power. The Q_ext is designed variable from 5×10⁶ to 1×10⁷.     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

能量为6×1014~5×1016eV的宇宙线能谱研究

1982年, 作者在悉尼大学对能量为6×10¹⁴~5×10¹⁶eV的高能宇宙线的能谱进行了实验研究. 实验采用了快速、高效率的电子仪器, 并用电子计算机进行控制, 实现了高度自动化. 研究结果表明, 初级宇宙线的积分能谱可表示为I=K.(E/E₀)^－γ, 式中γ的数值在能量E为3×10¹⁵eV附近由1.15±0.04改变为1.19±0.08.     

Effect of Annealing Temperature on Electrical Properties of Ferroelectric Bi3.25La0.75Ti3O12 Capacitors

Lanthanum-modified bismuth titanate (Bi_3.25La_0.75Ti₃O₁₂, BLT) thin films arefabricated on platinized Si wafers by the sol-gel method, and the effect of annealing temperatures ranging from 650°C to 800°C on the electrical properties of Pt/BLT/Pt capacitors are investigated. It is found that polarization and leakage current of BLT capacitors strongly depend on the annealing temperature although all the capacitors demonstrate very similar characteristics, except the value of polarization, in pulse-width dependence, retention, and fatigue. Remanent polarization increases with the increase of annealing temperature, and annealing temperature of 700°C can yield thelargest remanent polarization, and then polarization decreases with increasing annealing temperature. For the 700°C annealed Pt/BLT/Pt capacitor, the remanent polarization 2P_r and the coercive field 2E_c, at an electric field of 226kV/cm, are 23.8μC/cm² and 130kV/cm, respectively. Dielectric breakdown voltages of BLT films annealed at 750°C and 800°C are much lower than those annealed at 650°C and 700°C. At 100kV/cm, the leakage currents of BLT films prepared at 650°C and 700°C are only1.5×10^-6A/cm² and 8.9×10-7A/cm², espectively. Moreover, all the Pt/BLT/Pt capacitors exhibit excellent retention properties after a cumulative time of 1× m 10⁴s and do not show any significant fatigue up to 1×10¹⁰ switching cyclesat frequency of 1MHz.