磁性材料的磁结构、磁畴结构和拓扑磁结构

首先简要地介绍了磁性材料中磁结构、磁畴结构和拓扑磁结构以及相互之间的关系. 一方面, 磁畴结构由材料的磁结构、内禀磁性和微结构因素决定; 另一方面, 磁畴结构决定了材料磁化和退磁化过程以及技术磁性. 拓扑学与材料物理、材料性能的联系越来越紧密. 最近的研究兴趣集中在一些拓扑磁性组态, 如涡旋、磁泡、麦纫、斯格米子等. 研究发现这些拓扑磁结构的拓扑性质与磁性能密切相关. 然后从尺寸效应、缺陷、晶界三个方面介绍国际学术界在磁结构、磁畴结构和拓扑磁结构方面的进展. 最后介绍了在稀土永磁薄膜材料的微观结构、磁畴结构和磁性能关系、交换耦合纳米盘中的拓扑磁结构及其动力学行为方面的工作. 通过对文献的评述, 得到以下结论: 开展各向异性纳米复合稀土永磁材料的研究对更好地利用稀土资源具有重要的意义. 可以有目的地改变材料的微结构, 可控地进行磁性材料的磁畴工程, 最终获得优秀的磁性能. 拓扑学的概念正在应用于越来越多的学科领域, 在越来越多的材料中发现拓扑学的贡献. 研究磁畴结构、拓扑磁性基态或者激发态的形成规律以及动力学行为对理解量子拓扑相变以及其他与拓扑相关的物理效应是十分重要的. 也会帮助理解不同拓扑学态之间相互作用的物理机制及其与磁性能之间的关系, 同时拓展拓扑学在新型磁性材料中的应用.     

稀土配合物Tb(Sal)3·3H2O纳米微晶的制备及发光性质

利用化学沉淀法制备了不同粒径的Tb(Sal)_3·3H_2O纳米微晶和Tb(Sal)_3·3H_2O稀土配合物。利用元素分析、红外光谱、热重分析和透射电镜表征了纳米微晶和稀土配合物的结构、热性质和粒径大小。利用荧光激发和发射光谱、紫外光谱探讨了有机配体和中心离子之间的能量传递过程。结果显示Tb(Sal)_3·3H_2O纳米微晶的粒径主要分布在50～250nm区域并且发出较强铽(Ⅲ)离子的特征荧光。这些结果为进一步扩展稀土配合物在发光材料以及磁材料中的应用奠定了基础。     

提高土铕配合物发光性质研究简

将稀土铕配合物Eu（BA）3（TPPO）2分别组装到未修饰和修饰的介孔分子筛（SBA-15）中,详细地表征了样品的形貌和结构,系统地研究了其光致发光性质和稳定性,并与纯的稀土配合物进行比较研究。研究结果表明,SBA-15为组装的稀土配合物提供了良好的刚性环境,组装后的稀土铕离子配合物的光致发光稳定性比纯的配合物的光致发光稳定性有很大的提高。这将使稀土配合物在分子光学、电子器件等诸多领域具有重要的应用前景。     

铁基纳米晶合金介观结构的等效RLC并联模型

根据实验研究成果提出纳米晶合金软磁性能受其介观结构影响的观点，建立了Fe基纳米晶合金的球状介观结构模型，分别求出只有交变磁场或交变磁场和静磁场作用时纳米晶粒球的频率函数——D函数.分析表明，两种D函数都是复变函数，其实部Re(D)为纳米晶电感性质和电容性质的反映，虚部Im(D)为纳米晶电阻性质的反映，据此建立了Fe基纳米晶合金介观结构的等效RLC并联模型.由该模型求得合金产生极值巨磁电阻的条件为v_extGMI=v|_Re(D)=0，决定因素有μ,σ,ω,R和H_ex及微观磁结构. 关键词： Fe基纳米晶合金 等效RLC并联模型 球状介观结构模型 频率函数     

稀土配合物Tb（Sal）3·3H2O纳米微晶的制备及发光性质

利用化学沉淀法制备了不同粒径的Tb（Sal）3·3H2O纳米微晶和Tb（sal）3·2H2O稀土配合物。利用元素分析、红外光谱、热重分析和透射电镜表征了纳米微晶和稀土配合物的结构、热性质和粒径大小。利用荧光激发和发射光谱、紫外光谱探讨了有机配体和中心离子之间的能量传递过程。结果显示Tb（Sal）,·3H2O纳米微晶的粒径主要分布在50～250nm区域并且发出较强铽（Ⅲ）离子的特征荧光。这些结果为进一步扩展稀土配合物在发光材料以及磁材料中的应用奠定了基础。     

含铕配合物荧光纳米纤维的制备及光学性质的研究

通过静电纺丝技术,将发光良好的稀土配合物Eu(DBM)₃·H₂O和Eu(DBM)₄·CPC纳米微粒复合到水溶性的聚乙烯基吡咯烷酮中,制备了具有稀土铕离子红色特性荧光的聚合物纳米纤维。通过对稀土配合物以及聚合物纳米纤维样品扫描电镜和透射电镜的测试,发现当稀土配合物复合到聚合物纳米纤维中后,由于与聚乙烯基吡咯烷酮乙醇溶解性良好,其微观结构发生了变化,得到了50～100 nm左右的比较均匀的线状结构。同时,通过对稀土配合物以及聚合物纳米纤维样品的荧光激发、发射光谱及荧光寿命进行研究,表明稀土配合物在聚合物纳米纤维中比其在粉末状有更高的发光强度及更长的荧光寿命,其原因在于高分子纳米纤维为稀土配合物提供了较稳定的化学环境。     

一种金纳米球复合稀土Eu3+功能纳米材料的制备及光热监测应用

光热治疗基于光热药剂在激光照射下产生热量,进而高温杀死肿瘤细胞,因而实时监测光热过程中微观温度变化对于优化治疗效果具有十分重要的作用。稀土Eu~(3+)配合物的发光具有线谱、长荧光寿命以及对温度高度敏感的特点,利用Eu~(3+)配合物的温敏特性可检测光热过程中的温度变化,整合温度监测功能和光热特性的纳米体系在光热治疗领域具有很好的应用前景。本文制备了一种内部封装温度敏感探针Eu~(3+)配合物且表面复合金纳米球的功能纳米颗粒,将该功能纳米颗粒分散液置于不同的温度环境中,发现其荧光性能对温度具有高的响应灵敏度,即Eu~(3+)的特征发射峰(615 nm)强度随温度升高降低52.7%,表明该稀土荧光温度纳米传感器具有高的温度敏感性。在激光辐照下,功能纳米颗粒可以产生良好的光热现象,基于自身的温敏特性可实时对光热特性进行温度监控。     

三角形石墨烯量子点阵列的磁电子学特性和磁输运性质

基于密度泛函理论的第一性原理计算方法,研究了三角形石墨烯纳米片用不同连接方式拼接而成的四种一维量子点阵列(1D QDAs)的磁电子学性质和磁输运性质.结合能计算表明所有1D QDAs是非常稳定的.特别是研究发现1D QDAs的电子和磁性质不仅依赖于磁性态,也明显依赖于连接方式,如在无磁态时,不同量子点阵列(QDAs)可为金属或窄带隙半导体.在铁磁态时,不同QDAs能为半金属(half-metal)或带隙不同的双极化磁性半导体.而在反铁磁态时,不同QDAs为带隙不等的半导体.这些结果意味着连接方式对有效调控纳米结构电子和磁性质扮演重要的角色.1D QDAs呈现的半金属或双极化磁性半导体性质对于发展磁器件是非常重要的,而这些性质未曾在本征石墨烯纳米带中出现.同时,我们也研究了一种阵列的磁器件特性,发现其拥有完美的(100%)单或双自旋过滤效应,尤其是呈现超过109%的巨磁阻效应.     

提高稀土铕配合物发光性质研究

将稀土铕配合物—Eu(BA)3(TPPO)2分别组装到未修饰和修饰的介孔分子筛(SBA-15)中,详细地表征了样品的形貌和结构,系统地研究了其光致发光性质和稳定性,并与纯的稀土配合物进行比较研究。研究结果表明,SBA-15为组装的稀土配合物提供了良好的刚性环境,组装后的稀土铕离子配合物的光致发光稳定性比纯的配合物的光致发光稳定性有很大的提高。这将使稀土配合物在分子光学、电子器件等诸多领域具有重要的应用前景。     

纳米Ni/SiO2介孔复合体的制备与超顺磁性

采用溶胶－凝胶法制备了Ni^2+的SiO2干凝胶,再通过化学还原得到了纳米Ni/SiO2介孔复合体。从样品的透射电子显微镜观测结果可估算出,介孔复合体中Ni粒子的尺寸约为11－12nm。样品的磁性测量结果表明,与通常的Ni纳米颗粒相比,纳米Ni/SiO2介孔复合体中纳米Ni粒子的粒径在大于理论计算的纳米Ni粒子的临界尺寸时,仍能够保持超顺磁状态。在一定温度范围内,提高还原温度有利于复合体中纳米Ni粒子向超顺磁状态转变。     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.