Hole subband non-parabolicities in strained Si/Si1 − xGexquantum wells

We study the hole subband non-parabolicities in undoped pseudomorphic Si/Si_{1 − x}Ge_xquantum wells, strained in the growth direction 100. We solve exactly the multiband effective mass equation that describes the heavy, light and split-off hole valence bands. The symmetries of the Luttinger–Kohn Hamiltonian of the system are used to decouple the degenerate subbands. We calculate the in-plane dispersion relations, investigate the importance of the inclusion of the split-off hole valence band in the Hamiltonian and comment on the resulted non-parabolicities. Resonance states are also obtained.     

Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs

Photoluminescence measurements made at various depths below the surface of annealed GaAs single crystals are compared with vacancy distribution profiles obtained from electrical measurements. Results on undoped n-GaAs indicate that isolated Ga or As vacancies form non radiative centers. A broad-band emission at 1.20 eV, arising from V_Ga-donor complexes, is observed in spectra taken from n-type samples doped with Si, Sn or Te. The intensity of the 1.20eV band varies with depth and reaches its maximum value in the region where Ga vacancies are dominant. These results show the consistency between photoluminescence and electrical measurements. A band at 1.37eV has previously been assigned to V_As-acceptor complexes. This band was observed in this study only when the samples had been annealed in ampoules prepared from quartz containing traces of Cu. It is concluded that the 1.37eV band is due to Cu contamination rather than V_As-acceptor complexes.     

Shallow acceptor luminescence in GaAs grown by liquid phase epitaxy

Two pairs of photoluminescence (PL) emission bands between 1.494 and 1.480 eV have been observed at 4.2°K from high purity, undoped GaAs layers grown by liquid phase epitaxy. The PL emission from doped layers grown after incremental Si additions to a single parent melt suggests that Si acceptors are responsible for the lower energy pair of bands near 1.484 eV. The identity of the acceptor species responsible for the higher energy pair near 1.493 eV is presently unknown.     

Optical characterization of SiO2/Zn2SiO4:V nanocomposite obtained after the incorporation of ZnO:V nanoparticles in silica host matrix

Vanadium-doped Zn₂SiO₄ particles embedded in silica host matrix were prepared by a simple solid-phase reaction under natural atmosphere at 1200 °C after the incorporation of ZnO:V nanoparticles in silica monolith using sol-gel method with supercritical drying of ethyl alcohol in two steps. The obtained sample, exhibits a strong PL band in the visible range at 540 nm and two thin emission lines in the UV range at 394 and 396 nm under intensive power excitation. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. It is suggested that radiative defects attributed to vanadium in the interfaces between Zn₂SiO₄ particles and SiO₂ host matrix resulting from heat treatment and zinc oxide excitonic emissions, were responsible for theses luminescence bands.     

用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：     

CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres

The yellow emission of thermally treated undoped and In doped ZnO nanostructures was studied by the cathodoluminescence (CL) technique. CL spectra acquired at room temperature of the as-grown samples revealed two emissions at about 3.2 eV and 2.13 eV, corresponding to the near band edge and defect related emissions, respectively. On annealing the samples at 600  ^°C in Ar and O₂ atmospheres, the defect emission suffers a red shift, irrespective of the annealing atmosphere. This red shift is explained in terms of variations in the relative intensities of the two component bands centered at about 2.24 eV and 1.77 eV, which were clearly resolved in the CL spectra acquired at low temperature of the annealed samples. A decrease of the relative intensity of the yellow emission (2.24 eV) was observed for all thermally annealed samples. The annealing of zinc interstitial point defects is proposed as a possible mechanism to explain this intensity decrease.     

Stimulated emission of GaN under high one and two quantum excitation

Stimulated emission at 3.435 eV in GaN at 80 K is reported. This emission is attributed to a cooperative excitonic process and is observed only in undoped samples. One and two photon optical pumping has been used and optical gain of about 10³ cm^-1 has been measured.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Photoluminescence properties of a near-stoichiometric CuGaSe2 film

Epitaxial films of CuGaSe₂ were grown on (001)GaAs substrates by an MBE technique. A near-stoichiometric film with chemical compositions consistently varied from Cu- to Ga-rich was prepared by growing the film without the substrate rotation. A series of PL spectra was obtained by directing a focused laser beam point-by-point across the boundary separating the Cu- and Ga-rich regions. Distinct features of these spectra were noted. On the Cu-rich side, optical emissions peaked at 1.71, 1.67, 1.63, and 1.59 eV were observed in a PL spectrum. The peak at 1.71 eV was due to the emission of bound exciton, while the peak at 1.67 eV was caused by the free-to-bound transition. The other two peaks were identified to be the donor-to-acceptor emissions. Further annealing experiments performed in different environments suggested that the peaks at 1.67, 1.63, and 1.59 eV were associated with the optical transitions of CB→Cu_Ga, Cu_i→Cu_Ga, and Cu_i→V_Ga, respectively. On the Ga-rich side, a dominant donor-to-acceptor emission peaked at 1.62 eV was observed, which was determined to be the Ga_Cu→V_Cu transition. The two defects with opposite charge states resulted in a highly compensated material with high resistivity.     

Chemical effects in the N7 VV Auger spectra from W(100) and W(110) surfaces

Fine structure in the N₇ VV Auger spectra from clean W(100) and W(110) surfaces has been interpreted by Lander's band model for the doubly ionized final state. It is shown that the energies of the prominent emissions in the spectra are similar for the two surfaces and furthermore are consistent with the self convolution of a bulk density of states for tungsten. An additional feature in the spectrum from the W(100) surface has been attributed to emission from an intrinsic surface state at ?0.4 eV. The localization of this state at the surface was confirmed by its sensitivity to adsorbates (H₂, CO, O₂ and I₂). During the interaction of these gases with the surface the Auger spectra always retained the features attributed to the bulk density of states which were modified only by a shift in the background intensity profile. New emission features in this part of the spectra were not seen except for the example of hydrogen adsorption when a single new emission could be seen on each of the two tungsten surfaces. However, each adsorbate produce either one (H₂) or two (CO, O₂ and I₂) new emissions at lower energies which were attributed to emissions from new adsorbate derived levels which reside at energies below the prominent features of the tungsten valence band. The location of these new adsorbate levels is compared and contrasted with the equivalent ultraviolet photoelectron spectroscopic determinations.     

Electroluminescence in CuGaSe2 single crystals

Electroluminescence has been observed in p-type CuGaSe₂ single crystals. At room temperature these crystals exhibit a resistivity of about 10^?2 Ω cm. The electrominescence has been obtained by minority carrier injection from an indium electrode. Two peaks have been identified in the emission spectrum whose energies are 1.53 and 1.59 eV, respectively. These peaks could be caused by the recombination of injected minority carriers in acceptor centers which are localized in the forbidden gap near the valence band.     

ZnSe晶体中Cu杂质深能级的ODLTS谱

用控制Cu杂质在ZnSe品格中占据位置的方法,成功地得到了Cu-G和Cu-R中心分别占优势的ZnSe:Cu晶体.首次用ODLTS方法测得与Cu-R和Cu-G中心相应的受主能级分别位于价带顶上0.72eV和0.30eV.     

Optical properties of p-type ZnO doped by lithium and nitrogen

A lithium and nitrogen doped p-type ZnO (denoted as ZnO: (Li, N)) film was prepared by RF-magnetron sputtering and post annealing techniques with c-Al₂O₃ as substrate. Its transmittance was measured to be above 95%. Three dominant emission bands were observed at 3.311, 3.219 and 3.346 eV, respectively, in the 80 K photoluminescence (PL) spectrum of the p-type ZnO:(Li, N), and are attributed to radiative electron transition from conduction band to a Li_Zn-N complex acceptor level (eFA), radiative recombination of a donor-acceptor pair and recombination of the Li_Zn-N complex acceptor bound exciton, respectively, based on temperature-dependent and excitation intensity-dependent PL measurement results. The Li_Zn-N complex acceptor level was estimated to be about 126 meV above the valence band by fitting the eFA data obtained in the temperature-dependent PL spectra.     

Optical properties of in situ doped and undoped titania nanocatalysts and doped titania sol-gel nanofilms

In this paper we present spectroscopic properties of doped and undoped titanium dioxide (TiO₂) as nanofilms prepared by the sol-gel process with rhodamine 6G doping and studied by photoacoustic absorption, excitation and emission spectroscopy. The absorption spectra of TiO₂ thin films doped with rhodamine 6G at very low concentration during their preparation show two absorption bands, one at 2.3 eV attributed to molecular dimmer formation, which is responsible for the fluorescence quenching of the sample and the other at 3.0 eV attributed to TiO₂ absorption, which subsequently yields a strong emission band at 600 nm. The electronic band structure and optical properties of the rutile phase of TiO₂ are calculated employing a fully relativistic, full-potential, linearized, augmented plane-wave (FPLAPW) method within the local density approximation (LDA). Comparison of this calculation with experimental data for TiO₂ films prepared for undoped sol-gels and by sputtering is performed.     

Visible photoluminescence in porous GaAs capped by GaAs

A typical porous structure with pores diameters ranging from 10 to 50 nm has been obtained by electrochemical etching of (1 0 0) heavily doped p-type GaAs substrate in HF solution. Room temperature photoluminescence (PL) investigations of the porous GaAs (π-GaAs) reveal the presence of two PL bands, I₁ and I₂, located at 1.403 and 1.877 eV, respectively. After GaAs capping, the I₁ and I₂ PL bands exhibit opposite shift trends. However, the emission efficiency of these two bands is not strongly modified. Low temperature PL of capped porous GaAs versus injection levels shows that the I₁ PL band exhibits a red shift while the I₂ PL band exhibits a blue shift with increasing injection levels. The I₂ PL band intensity temperature dependence shows an anomalous behaviour and its energy location shows a blue shift as temperature increases. The observed PL bands act independently and are attributed to electron – hole recombination in porous GaAs and to the well-known quantum confinement effects in GaAs nanocrystallites. The I₂ PL band excitation power and temperature dependencies were explained by the filling effect of GaAs nanocrystallites energy states.     

Studies of luminescence properties of ZnO and ZnO:Zn nanorods prepared by solution growth technique

Pyramidal ZnO nanorods with hexagonal structure having c-axis preferred orientation are grown over large area silica substrates by a simple aqueous solution growth technique. The as-grown nanorods were studied using XRD, SEM and UV-vis photoluminescence (PL) spectroscopy for their structural, morphological and optical properties, respectively. Further, the samples have also been annealed under different atmospheric conditions (air, O₂, N₂ and Zn) to study the defect formation in nanorods. The PL spectra of the as-grown nanorods show narrow-band excitonic emission at 3.03 eV and a broad-band deep-level emission (DLE) related to the defect centers at 2.24 eV. After some mild air annealing at 200 °C, fine structures with peaks having energy separation of ∼100 meV were observed in the DLE band and the same have been attributed to the longitudinal optical (LO) phonon-assisted transitions. However, the annealing of the samples under mild reducing atmospheres of N₂ or zinc at 550 °C resulted in significant modifications in the DLE band wherein high intensity green emission with two closely spaced peaks with maxima at 2.5 and 2.7 eV were observed which have been attributed to the V_O and Zn_i defect centers, respectively. The V-I characteristic of the ZnO:Zn nanorods shows enhancement in n-type conductivity compared to other samples. The studies thus suggest that the green emitting ZnO:Zn nanorods can be used as low voltage field emission display (FED) phosphors with nanometer scale resolution.     

Electron excitations in LiB3O5 crystals with defects: Low-temperature time-resolved luminescence VUV spectroscopy

The dynamics of electron excitations and luminescence of LiB₃O₅ (LBO) single crystals was studied using low-temperature luminescence vacuum ultraviolet spectroscopy with a subnanosecond time resolution under photoexcitation with synchrotron radiation. The kinetics of the photoluminescence (PL) decay, the time-resolved PL emission spectra, and the time-resolved PL excitation spectra of LBO were measured at 7 and 290 K, respectively. The PL emission bands peaking at 2.7 eV and 3.3 eV were attributed to the radiative transitions of electronic excitations connected with lattice defects of LBO. The intrinsic PL emission bands at 3.6 and 4.2 eV were associated with the radiative annihilation of two kinds of self-trapped electron excitations in LBO. The processes responsible for the formation of localized electron excitations in LBO were discussed and compared with those taking place in wide-gap oxides.     

Effect on photophysical properties of colloidal ZnS quantum dots by doping with cobalt, copper, and cobalt�Ccopper mixtures

Colloidal ZnS quantum dots (QDs) are prepared by passing H₂S gas through a solution of Zn(CH₃COO)₂ in acetonitrile. Photophysical properties are investigated using UV?CVisible and photoluminescence (PL) spectroscopy. The spectrum shows an absorption shoulder at 271 nm representing a band gap of 4.6 eV. The doping of ZnS QDs with Co, Cu, and a mixture of Co and Cu not only increased the band gap to 0.2 eV but also turns these otherwise colorless QDs to blue in color due to cobalt, and green due to Cu. The observed emission in the visible region suggests that the dopants may have induced additional excited states to the ZnS QDs. This absorbance in the visible region can be utilized in the optoelectronic applications.     

Self-assembly and photoluminescence of molybdenum oxide nanoparticles

We report on the synthesis of self-assembled hillock shaped MoO₃ nanoparticles on thin films exhibiting intense photoluminescence (PL) by RF magnetron sputtering and subsequent oxidation. MoO₃ nanocrystals of size ∼29 nm are self-assembled into uniform nanoparticles with diameter ∼174 nm. The mechanism of the intense PL behaviour from MoO₃ nanoparticles is investigated and systematically discussed. The films exhibit two bands; a near-band-edge UV emission and a defect related deep level visible emission. The enhancement in PL intensity with annealing is not only by the improvement in crystallinity and grain size but also by the increase in the rms surface roughness and porosity of the films. The PL intensity is thermally activated with activation energy 1.07 and 0.87 eV respectively for the UV and visible emissions. The UV band exhibits a blue shift according to the band gap with increasing post-annealing temperatures, which suggests the possibility to tune the UV photoluminescence band by varying the oxidation temperature.     

Luminescent properties of GaN films grown on porous silicon substrate

GaN films have been grown on porous silicon at high temperatures (800-1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spectra recorded at 5 K exhibit excitonic emissions around 3.36-3.501 eV and a broad yellow luminescence at 2.2 eV. CL analysis at different electron excitation conditions shows spatial non-uniformity in-depth of the yellow and the band-edge emissions. These bands of luminescence are broadened and red- or blue-shifted as the electron beam penetrates in the sample. These behaviors are explained by a change of the fundamental band gap due to residual strain and the local thermal effect. It was found that the use of AlN buffer layer improves the crystalline quality and the luminescence property of GaN.