取向纳米ZnO/Cu_2O异质结阵列的制备及光电特性

以水热合成法制备的一维取向n型ZnO纳米线阵列为衬底,采用电化学沉积法在其上沉积生长一层p型Cu2O半导体包覆层,制备出了新型ZnO/Cu2O异质结纳米线阵列光敏器件.利用XRD、SEM、TEM、XPS、PL及光响应特性等测试方法对样品的形貌、晶体结构、化学成分及光电特性进行了分析表征.研究了生长条件对ZnO/Cu2O异质结纳米线阵列各种特性的影响.研究发现,适宜的沉积电压和沉积时间是保证ZnO/Cu2O异质结光敏器件具有适宜厚度核壳包覆层及较好光响应特性的关键因素.研究结果为ZnO及Cu2O半导体材料在光敏器件中的应用提供了实验基础.     

Ag/ZnO/ZnSe三元异质结的合成及其可见光光催化性能

以Ag纳米线为模板,通过两步水浴法合成了Ag/ZnO/ZnSe三元异质结光催化材料。利用场发射扫描电子显微镜(FESEM)、X射线能谱仪(EDS)、X射线衍射仪(XRD)以及透射电子显微镜(FETEM)对样品的形貌和结构进行了表征。结果显示,Ag/ZnO/ZnSe三元异质结为蠕虫状的Ag/ZnO二元异质结外镶嵌着ZnSe小颗粒。在可见光下,对比纯Ag纳米线、纯ZnO纳米球、Ag/ZnO异质结对罗丹明B的可见光降解效率,结果发现Ag/ZnO/ZnSe异质结表现出了更高的光催化效率。其光催化性能的提高主要是由于Ag/ZnO/ZnSe异质结的作用促使电子空穴对的分离,降低了电子空穴对的复合机率,从而提高了材料的光催化效率。     

三元添加剂水溶液体系合成亚微米硫化锌空心球

利用仿生合成方法,通过加入一定量的引发剂使甲基丙烯酸原位聚合,在聚乙二醇(PEG)、聚甲基丙烯酸(PMAA)和十二烷基硫酸钠(SDS)的三元添加剂混合溶液体系中控制了合成硫化锌晶体,提出了一种简单易行的合成硫化锌空心球的新方法.采用透射电子显微镜(TEM)、扫描电子显微镜(SEM)、X射线粉末衍射(XRD)及紫外吸收光谱等手段对合成样品的形貌、结构及性能进行了表征.TEM结果显示,ZnS空心球的直径约为300～400nm,其壳层的厚度约为50nm.SEM结果显示,空心球的外壳是由初级纳米粒子定向熔合排列形成的蠕虫状结构紧密组装而成.由于相应的胶束结构的改变,表面活性剂SDS浓度的变化明显改变了ZnS产物的形貌,在较高浓度的SDS溶液中得到了ZnS片状晶体的球形聚集体.利用核-壳机理初步解释了空心球结构的形成过程.     

直接Z型Zn2SnO4-xNx/ZnO1-yNy异质结光催化剂的制备及机理

采用微波溶剂热法成功制备直接Z型Zn_2SnO_(4-x)N_x/ZnO_(1-y)N_y核壳结构异质结光催化剂。2种物质不同的功函数改变了其表面电荷密度,并在界面处形成内建电场,导致其从传统的Ⅰ型镶嵌异质结转变为Ⅱ型异质结,再转变为Z型异质结构。N杂质原子替代O原子进入Zn_2SnO_4和ZnO的晶格,在两者的价带(VB)顶部形成双杂质能级。核壳结构的Z型异质结光催化剂对罗丹明B的降解速率为纯相Zn_2SnO_(4-x)N_x的1.40～1.43倍,同时具有良好的循环稳定性,且可以降解亚甲基蓝、甲基橙、水杨酸等污染物。Z型异质结的形成使其光生电子-空穴对具有较强的氧化还原能力,而双杂质能级的存在可以拓宽其光响应范围并提高载流子的分离效率。因此,Zn_2SnO_(4-x)N_x/ZnO_(1-y)N_y异质结光催化剂高的光催化活性归因于Z型异质结和双杂质能级的协同作用。     

硫化镍修饰的硫化镉/硫化锌异质结复合光催化剂用于高效光催化产氢性质的研究(英文)

光催化水分解是一种经济而且可持续的利用太阳能来制备洁净能源氢气的方式,因此寻找和开发高效稳定的光催化剂已成为光催化产氢领域的研究热点.CdS因其具有高效、廉价、较负的导带位置等优点而引起人们的关注.然而,由于CdS镉本身光生电子/空穴对易复合,以及存在光腐蚀等不足,限制了其实际利用.为了提高CdS的光催化水分解产氢性质,人们开发了构建异质结和负载助催化剂等策略.近年来,ZnO,g-C_3N_4,TiO_2等半导体已被证实可以与CdS一起形成Ⅱ型异质结来促进光生电子和空穴的分离,进而提升光催化产氢性质.此外,传统的type Ⅰ型CdS/ZnS异质结也被证实能提高光催化产氢速率.研究表明,ZnS一方面能够钝化CdS表面态,另一方面ZnS半导体中存在缺陷能(VZn,IS),有利于转移CdS价带的空穴,最终大幅度提高了整个体系的光催化活性.在适用于CdS的各种助催化剂中,由于常用的Pt,Pd和Ru等贵金属的高成本严重限制了它们的实际应用,所以近年来基于过渡金属的各种非贵金属助催化剂(包括MoS_2,Ni_2P,FeP,Ni_3N,NiS,Ni(OH)_2等)得到了广泛的研究.我们采用原位化学沉积法将无定型的NiS助催化剂修饰在CdS/ZnS异质结表面,开发出廉价高效的NiS-CdS/ZnS三元产氢光催化体系.在该三元体系中,NiS和ZnS分别用于促进CdS导带上光生电子和价带的光生空穴的分离及利用,从而使得高能的CdS的光生电子转移到NiS表面并应用于光催化产氢,而高能的CdS的光生空穴被应用于氧化牺牲剂Na2S和Na_2SO_3,最终实现了整个体系的高效光催化产氢活性及稳定性.我们首先利用水热合成法得到大量的CdS纳米棒,然后使用化学浴沉积法在CdS表面沉积一定量的ZnS壳层,制备出CdS/ZnS异质结.光照前,采用原位化学沉积法将NiS颗粒负载在CdS/ZnS表面.光催化产氢的性能测试表明,当初始加入镍盐(20 mmol/L)量为100μL时,所得样品N2(NiS-CdS/ZnS)产氢效率最高(574μmol·h~(–1)),分别是CdS/NiS,CdS/ZnS和CdS的16.2,5.6和38倍.复合材料的表观量子效率高达43.2%.由此可见,NiS助催化剂和CdS/ZnS异质结存在协同效应,实现了三元体系的高效的光催化产氢性能.瞬态光电流测试结果表明,ZnS和NiS的加入能有效地促进光生电子/空穴的分离和利用.X射线衍射结果表明,CdS以六方相的形式存在,负载ZnS和NiS之后没有明显变化.高分辨透射电子显微镜照片和元素分布证实了NiS-CdS/ZnS复合材料中ZnS和NiS富集在纳米棒表层,其中NiS没有明显晶格条纹.紫外-可见漫反射结果表明,NiS和ZnS的负载后,复合材料的吸收边和纯相的CdS相近,而加入NiS助催化剂使得复合催化剂的颜色变黑,进而增加了可见光的吸收.     

氧化锌基梯型异质结光催化剂（英文）

随着工业的快速发展和化石燃料的过度开发使用,能源危机和环境污染日益严重.光催化技术在能源与环境领域具有良好的应用前景,是人类社会可持续发展的有效策略之一.传统氧化锌(ZnO)光催化剂因其无毒性、良好生物相容性和低成本而备受关注.然而, ZnO光催化性能受限于光生载流子复合严重和光生电子还原能力弱等问题.常规的改性方法,包括原子掺杂、缺陷调控、助催化剂负载等,很难兼顾载流子分离效率和氧化还原能力.相较而言,构建梯型异质结可以较好地解决上述问题.梯型异质结界面处的内建电场可以促进光生载流子的高效分离和转移,同时保留光催化体系最强的氧化还原能力,从而实现更高效的光催化反应.然而,尽管已有大量关于ZnO基梯型异质结的研究工作被陆续发表,却很少有评论性文章对该领域进行综述.因此,有必要对ZnO基梯型光催化剂的研究成果进行总结,并为这一研究方向的发展提供及时的指导.本文首先介绍了异质结的发展历程,讨论了II型异质结、传统Z型体系、全固态Z型异质结的光催化反应机理,并在此基础上指出了它们在热力学上的挑战.其次,深入分析了梯型异质结的理论基础,包括还原型半导体和氧化型半导体的选择,相互接触后的电子转移...     

花状ZnO/ZnS异质结构的简易合成、结构表征及光催化活性

采用简便的两步溶液相化学方法,在较低温度下(80℃),制备出了花状的ZnO/ZnS异质结构。分别利用X射线衍射、X射线光电子能谱仪、扫描电子显微镜、透射电子显微镜、紫外-可见光谱仪等测试手段对所制备的样品进行表征,结果表明ZnO/ZnS异质结构是由花状ZnO纳米结构和ZnS纳米粒子组成。在光降解罗丹明B(RhB)的测试中,ZnO/ZnS异质结构样品体现出了比ZnO前驱物和商业P25光催化剂更高的光催化效率,这主要可归因于异质结构更有利于电子-空穴的有效分离。ZnO/ZnS光催化剂体现出良好的循环稳定性。     

金属氧化物异质结气体传感器气敏增强机理

金属氧化物异质结由于费米能级效应、不同组分之间的协同作用,常被用来提高电阻型金属氧化物半导体气体传感器的气敏特性。本文简述了近年来国内外金属氧化物异质结材料的类别,主要分为混合氧化物结构、层状结构、第二相粒子修饰结构、一维纳米结构和核-壳结构;重点综述了金属氧化物异质结的气敏增强机理,包括异质结效应、协同效应、催化溢流效应、响应反型、载流子分离及微结构调控六大机理;分析了当前异质结气体传感器面临的瓶颈。最后对纳米异质结气体传感器的发展进行了展望,今后金属氧化物异质结气体传感器可以从明确异质结界面机理展开,这将为自下而上地设计出符合实际需要的气体传感器提供一定参考。     

ZnO/ZnS大面积单晶异质结及其光电性能研究

ZnO和ZnS是重要的Ⅱ-Ⅵ族宽禁带半导体材料,二者之间形成的异质结具有Ⅱ型能带结构,可以促使受激载流子实现空间分离,延长受激载流子的寿命,从而提高材料的光催化和光电探测性能。本文利用物理气相沉积方法,首次在ZnO块状单晶衬底上生长了一层ZnS单晶薄膜,薄膜由厚约4nm、边长几百纳米,取向一致的等边三角形纳米片组成。X射线衍射和透射电子显微镜的表征结果显示,ZnS薄膜与ZnO衬底具有单一外延取向关系。阴极射线荧光光谱表明ZnS薄膜的制备显著提高了ZnO单晶片可见光荧光发光峰的强度。此外,对ZnO/ZnS异质结的紫外光电探测性能的研究结果显示,异质结对不同波长的紫外光均有响应,光响应的上升弛豫时间和下降弛豫时间分别为200ms和1050ms,展示了较好的光电应用潜力。     

Ag掺杂对n-ZnO纳米棒/p-GaN异质结结构和发光性能的影响

利用简单的水热合成法在p-GaN薄膜上制备了Ag掺杂的一维ZnO纳米棒(ZnO NRs),并且研究了Ag掺杂对于ZnO NRs结构和形貌以及n-ZnO NRs/p-GaN异质结发光特性的影响。结果表明,不同Ag掺杂浓度的ZnO纳米棒截面均呈六边形的棒状结构,且纳米棒的取向垂直于衬底;XRD分析结果表明,随着Ag掺杂浓度的增加,ZnO纳米棒(0002)晶面的峰位向衍射角减小的方向移动,表明Ag+置换了ZnO晶格中的部分Zn2+后使其晶格常数略增加;随着Ag掺杂浓度的增加,ZnO纳米棒近带边发光峰发生一定的红移并且强度逐渐减弱,黄带发光峰逐渐增强,n-ZnO NRs/p-GaN异质结具有更好的传输效率。     

Hierarchical saw-like ZnO nanobelt/ZnS nanowire heterostructures induced by polar surfaces

Saw-like nanostructures composed of single-crystalline ZnO nanobelts and single-crystalline ZnS nanowires have been successfully synthesized by a vapor-solid process. Several techniques, including scanning electron microscope, transmission electron microscopy, and photoluminescence spectroscopy, were used to investigate the structures, morphology, and photoluminescence properties of the products. Due to the similar crystal habits of wurtzite ZnO and ZnS with chemically active Zn-terminated (0001) and chemically inactive O-terminated (or S-terminated) (000) polar surfaces, hierarchical saw-like nanostructures were considered to be formed by the initiation of a chemically active Zn-terminated ZnO (0001) polar surface. Photoluminescence properties of the heterostructures, different from pure ZnO nanobelts or ZnS nanowires, were also studied at room temperature.     

Self-organized hierarchical ZnS/SiO(2) nanowire heterostructures

Novel hierarchical heterostructures formed by wrapping ZnS nanowires with highly dense SiO(2) nanowires were successfully synthesized by a vapor-liquid-solid process. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. Studies indicate that a typical hierarchical ZnS/SiO(2) heterostructure consists of a single-crystalline ZnS nanowire (core) with diameter gradually decreasing from several hundred nanometers to 20 nm and adjacent amorphous SiO(2) nanowires (branches) with diameters of about 20 nm. A possible growth mechanism was also proposed for the growth of the hierarchical heterostructures.     

A study on electrodeposited of ZnO/ZnS heterostructures

ZnO/ZnS heterostructures were synthesized by a two steps electrochemical deposition method. Firstly, ZnS layer was deposited from an aqueous solution containing Na₂S₂O₃ and ZnSO₄ onto indium-doped tin oxide (ITO) coating glass substrate at two deposition potentials. Then, ZnO nanostructures were deposited from an aqueous solution of Zn(NO₃) onto ZnS surface. The as-obtained samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman and UV-visible analysis. The results indicate that the electrodeposition of ZnS layer at ?0.9 V give the best proprieties of ZnO/ZnS heterostructures. Homogeneous and uniform surface of ZnO/ZnS heterostructure was confirmed by AFM images. The XRD patterns indicates a high crystallinity of ZnO/ZnS. A high transmittance of 65% was also noted from UV-Visible spectra and band gap energy as large as 3.6?eV was found.     

ZnS nanoparticle decorated ZnO nanowall network: investigation through electron microscopy and secondary ion mass spectrometry

We report on the fabrication of ZnO nanowall networks decorated with ZnS nanostructures on aluminum substrates using simple chemical route. The structural features and elemental constituents of the ZnS/ZnO heterostructure systems have been extensively studied using electron microscopy and energy dispersive X‐ray spectroscopy. The light emission characteristics of the bare and heterostructured systems have been analyzed using room temperature photoluminescence spectroscopy. The decoration of ZnS nanostructures over ZnO nanowalls has been evidenced through secondary ion mass spectrometry (SIMS). The ‘matrix effect’ has been found to be prominent during SIMS analysis of the bare and heterostructured nanowalls indicating the presence of ZnS phase over ZnO surface. ‘MCs⁺‐SIMS’ has been employed to suppress the matrix effect and is found to be potentially effective in making a semi‐quantitative estimation of Zn and O surface–atom concentrations in both systems. The luminescence responses of the ZnS/ZnO heterostructures have been found to be strongly dependent on the extent of ZnS phase over ZnO. The higher luminescence responses in ZnS/ZnO heterostructures fabricated with smaller ZnS nanoparticles have been explained in terms of a mechanism of charge‐carrier transfer from ZnS to ZnO. Copyright © 2014 John Wiley & Sons, Ltd.     

Large-scale synthesis of tube-like ZnS and cable-like ZnS-ZnO arrays: Preparation through the sulfuration conversion from ZnO arrays via a simple chemical solution route

Arrayed structures are desirable for many applications, but the fabrication of many material arrays remains a significant challenge. As a prominent II-VI semiconductor, large-scale arrayed ZnS structure has not been easily fabricated. Here, we introduce a simple structure conversion route for the synthesis of novel arrayed structures, and large-scale tube-like ZnS structure arrays and cable-like ZnS-ZnO composite arrays were successfully prepared through sulfuration conversion from arrayed rod-like ZnO structure based on a hydrothermal method at low temperature. XRD, EDS, SEM, TEM and PL are used to confirm the formation of the novel arrayed structure and trace the conversion process. The results show that the conversion ratio can be conveniently tailored by the reaction time, and the PL properties of the obtained materials can be adjusted through the conversion ratio. Especially, the cable-like structure holds the PL properties of both ZnO and ZnS structures. This simple solution method can be further extended to the preparation of other semiconductor sulfide and selenide, and can amplify the application field of large-scale arrays of semiconductors.     

Dual II Heterojunctions Metallic Phase MoS2/ZnS/ZnO Ternary Composite with Superior Photocatalytic Performance for Removing Contaminants

Fabricating a high-performance photocatalyst to efficiently solve serious environmental problems is an urgent affair. Herein, a series of MoS₂/ZnO composites were successfully fabricated through a facile hydrothermal route using Na₂MoO₄, (NH₂)₂CS and urchin-like ZnO as precursors. According to the results of XRD and XPS, it was found that ZnS appeared in MoS₂/ZnO composite; meanwhile, the content was positively correlated with the weight of the precursor (NH₂)₂CS. It should be noted that the morphology and the metallic phase content of MoS₂ grown in situ on the surface of ZnO were affected by the molar ratio of Na₂MoO₄ and ZnO. Benefiting from the special dual II heterojunctions of MoS₂/ZnS/ZnO ternary composite, the material exhibited excellent charge separation and transfer performances. In the photocatalytic measurements, the MoS₂/ZnS/ZnO (Na₂MoO₄:ZnO 1:2 MZ2) composite not only exhibits excellent photocatalytic Cr^VI reduction activity of 42.3×10⁻³ min⁻¹, but also displays remarkable adsorption performance (nearly 32.1 %) for Cr₂ . In addition, the ternary composite shows dominant photocatalytic Cr^VI reduction activities compared to other photocatalysts. This work provides a high-efficient MoS₂/ZnS/ZnO ternary photocatalyst for environmental treatment.     

Laser Assisted Catalytic Growth of ZnS/CdSe Core‐Shell and Wire‐Coil Nanowire Heterostructures

ZnS/CdSe core‐shell and wire‐coil nanowire heterostructures have been synthesized by chemical vapor deposition assisted with pulsed laser ablation. Measurements from high‐resolution transmission electron microscopy and selected area electron diffraction have revealed that both ZnS/CdSe core‐shell and wire‐coil nanowires are of single‐crystalline hexagonal wurtzite structures and grow along the [0001] direction. While the lattice parameters of ZnS and CdSe in the core‐shell nanowires are nearly equal to those of bulk ZnS and CdSe, change of the lattice parameters in the CdSe‐coil is attributed to the doping of Zn into CdSe, resulting in the relaxation of compressive strain at the interface between CdSe‐coil and ZnS‐wire. Composition variation across the interfacial regions in the ZnS/CdSe nanowire heterostructures ranges only 10–15 nm despite the pronounced lattice mismatch between ZnS and CdSe by ?11%. Growth mechanisms of the ZnS/CdSe nanowire heterostructures are discussed.     

The study of electronic and optical properties of ZnO/MoS2 and its vacancy heterostructures by first principles

Based on the first principles calculation, the effects of vacancies on the structural, electronic and optical properties of ZnO/MoS₂ heterostructure are investigated in this work. The results show that vacancies could exist stably in the heterojunctions and cause a significant decrease in bandgap. ZnO/MoS₂ with an O vacancy maintains semiconductor property with a bandgap of 0.119 eV, while heterostructure with a Zn vacancy exhibits metallic characteristic. Furthermore, the absorption capability of defective heterojunctions has been extended to infrared light region with obvious redshift. To sum up, vacancy engineering effectively changes the electronic and optical properties of ZnO/MoS₂ heterostructure, which provides a feasible approach for adjusting the optoelectronic properties of two-dimensional heterostructures and broadening their application in functional nanoelectronic and optoelectronic devices.