YP1xVxO4∶Eu3+在真空紫外区发光的优化

系统地考查了Eu3 + 在YPO4 YVO4 固溶体中的发光。当V5+ 的浓度低于 0 3 ,出现VO4 3 -离子团的蓝色发射 ;直到V5+ 的浓度等于或大于 0 3时 ,VO4 3 -离子团的蓝色发射才被Eu3 + 离子的红色发射所猝灭 ,发射主波长在 61 9nm。在真空紫外线的激发下 ,Eu3 + 在YPO4 YVO4 固溶体有较强发光 ,并随着P5+ 浓度的增加 ,Eu3 + 离子的发光增强。经过优化的组成为YP0 7V0 3 O4 ∶Eu3 + 的荧光粉在真空紫外激发下既具有较强的发光 ,又具有优良的色纯度 ,将是一种新型的良好的等离子体平板显示用荧光粉。     

钒磷酸钇铕PDP用荧光粉的合成及其发光特性研究

采用共沉淀法成功合成了Y（P,V）O4：Eu^3＋荧光粉,并利用SEM、变温紫外激光激发及真空紫外激发下的发射光谱对所合成粉体的表面形貌及发光性能进行了表征。试验结果表明,与高温固相合成法相比,共沉淀法合成的Y（P,V）O4：Eu^3＋荧光粉的颗粒形貌好,发光强度明显提高;在325nm激光激发下,低温时存在基质VO4^3-的蓝色宽带发射,随着温度升高,VO4^3-吸收的激发能量逐渐传递给Eu^3＋,使其发光逐渐增强,当温度高于临界点时,Eu^3＋发射出现温度猝灭;Y（P,V）O4：Eu^3＋荧光粉发射主峰位于619nm,色纯度好,且发光亮度与彩色PDP用商品红粉（Y,Gd）BQ：Eu^3＋相当。     

GdVO4：Eu^3＋的激发光谱特性研究

测量了GdVO4：Eu^3 在室温下的光致发光光谱;研究了不同掺杂方式和烧结气氛对多晶GdVO4：Eu^3 发光性质的影响,探讨了GdVO4：Eu^3 的激发光谱在200～350nm范围内激发带的来源和GdVO4：Eu^3 中的能量传递。在200～350nm范围内的激发带可解释为来自于钒酸根团的配体O到V的电荷迁移跃迁吸收;硝酸溶液使部分正GdVO4形成多钒酸盐,还原气氛使GdVO4产生O空位和部分V变价,影响了钒酸根团间的电荷迁移跃迁吸收和钒酸根团间、钒酸根团与Eu^3 间的能量传递。产生激发谱带蓝移和激发带间强度比例变化。GdVO4中VO4^3-的π轨道能使得VO4^3-和稀土离子(Gd^3 、Eu^3 )的电子波函数有效地重叠,从而VO4^3-和稀土离子可通过交换作用有效地传递能量。GdVO4：Eu^3 在200nm处的吸收很弱,在此位置也没有Gd^3 或Eu^3 的4f^n-1 5d的吸收和明显的4f^n高能级吸收,而激发却十分有效,可解释为由于存在VC4^3-与Gd^3 或Eu^3 的4f^n高能级间有效的能量传递所致;由于Gd^3 的特征发射恰好在基质的强激发带。且Gd^3 的特征发射没有出现,可存在Gd^3 →VO4^3-→Eu^3 的能量传递。Gd^3 和^6GJ、^6PJ能级间隔与Eu^3 的^7Fl、^5D0能级间隔相近,处于^6GJ态的Gd^3 可通过共振能量传递激发：Eu^3 到^5Dn态,这可导致Gd^3 →Eu^3 离子的能量传递。     

红色荧光粉Ca4(La1-x-yGdxYy)1-nO(BO3)3:nEu3+的发光和优化

用高温固相法合成了红色荧光粉Ca4（La1-x-yGdxYy）1-nO（BO3）3：nEu^3＋（LnCOB：Eu,Ln=La1-x-y-GdxYy）,并对其在真空紫外至可见范围的发光性质进行了系统的研究,找出发光较好的组分范围并与某些商品红色荧光粉进行了比较。LnCOB：Eu在254nm紫外线激发下的发射光谱为Eu^3＋的^5D0→^7FJ（J=0,1,2,3,4）的特征跃迁。监测其最强的^5D0→^7F2发射线,其激发光谱在250nm左右有一个宽的激发带,归属于Eu-O电荷迁移带,适于用254nm汞线激发;在300—450nm有一些弱的归属于Eu^3＋的f-f跃迁的锐吸收峰;在真空紫外区184—188nm附近有一个宽带,为基质吸收带,并可能包含了Eu^3＋的f-d跃迁。在Ca4GdO0（BO3）3：Eu^3＋的激发光谱中,还包含了Gd^3＋的^8S7/2→^6GJ跃迁,此跃迁增强了荧光粉在184～188nm附近的激发强度。     

Dy3+/Tm3+共掺杂钒磷酸钇的共沉淀法合成及光谱性质

以Y2O3、Dy2O3、Tm2O3、V2O5、(NH4)2GPO4为原料,采用共沉淀化学法合成了体色纯白的Dy^3 、Tm^3 共掺杂YP1-xVxO4荧光粉。对合成荧光粉的V^5 ／p^5 、Dy^3 ／Tm^3 摩尔比等条件进行了研究。利用SEM、变温紫外激光激发下的发射光谱及紫外激发下的发射光谱,对所合成的粉体的表面形貌及发光性能进行了表征。YP1-xVxO4：Dy^3 ,Tm^3 荧光粉在325nm紫外激光激发下,低温时存在基质VO4^3-的蓝色宽带发射,随着温度升高,VO4^3 吸收的激发能量更有效地传递给Dy^3 、Tm^3 ,使其发光逐渐增强;在254nm的紫外光激发下,YP1-xVxO4：Dy^3 ,Tm^3 荧光粉发白光,是一种潜在的二基色高压汞灯用荧光粉。     

YPO4：Pr^3＋发光的浓度和温度特性

选择激发YPO4：Pr^3 中^Pr^3离子的^3Po级级,测量了系列浓度样品不同温度下的发射光谱及^3Po与^1D2能级的发光衰减曲线,讨论了613．2nm发射光谱线的来源问题,确认是Pr^3 离子的^1D2Г3）→^3H4(Г5）的发射。研究了Pr^3 离子^3P0与^D2能级不同的浓度猝灭关系,并用静态模型对^D2衰减曲线进行了拟合,结果显示^1D2能级发光发生浓度猝来的原因主要是相邻中心的偶极－四极相互作用引起的交叉弛豫。     

Eu3+和Tb3+掺杂的Y2SiO5体系发光特性研究

采用溶胶－凝胶法合成了Eu^3 和Tb^3掺杂的Y2SiO5基发光材料，通过测量它们的激发光谱和发射光谱，研究了它们的发光特性，探讨了材料中Tb^3和Eu^3 两种发光中心间的能量关系。结果表明，Eu^3＋在其中的特征发射以^5D0→^7F2电偶极跃迁为，Eu^3处于非反演对称中心格位；Tb^3在其中的发射为^5D4→^7FJ(J＝4－6）跃迁发射。当Eu^3和Tb^3共存于Y2SiO5基质中时Eu^3的发射增强，Tb^3的发射减弱，存在Tb^3→Eu^3能量传递，Tb^3对Eu^3具有敏化作用。     

一种新型红色荧光粉CaAl12O19∶Eu,Mn的制备及发光性能

固相法制备了碱土金属铝酸盐荧光粉CaAl12O19∶Eu,Mn,测试了样品的XRD及激发与发射光谱,对样品的结构及其发光性能进行了分析,并且考察了灼烧温度及Eu^3＋的浓度对样品发光性能的影响,对Eu^3＋的作用机理进行了探讨。该荧光粉能被波长短于550nm的蓝绿光以及紫外和近紫外光激发,其发射光谱峰值在590,615,645,657nm,其中前两个为Eu^3＋的特征发射,后两个为Mn4＋的2E-4A2跃迁发射。该荧光粉的最佳烧结温度与时间分别为1550℃和4h,Eu^3＋的最佳掺杂摩尔分数为0.11%左右。     

YVO_4∶Tm~(3+)的真空紫外发光性能(英文)

通过高温固相反应合成YVO4∶xTm(x=0.001,0.003,0.005,0.007,0.01,0.03,0.05)蓝色系列粉末状发光材料。经X射线衍射分析产物为单相,属四方锆英石结构,其结果与JCPDS标准卡(72-0861)相符。检测了材料的真空紫外激发光谱和发射光谱。YVO4∶xTm的真空紫外激发光谱在120~350 nm范围内为连续的带状峰,在155 nm和333 nm附近有明显的峰值。在155 nm激发下,YVO4∶xTm的发射光谱由两部分组成,其中主发射峰在474 nm附近呈一尖锐的线状,来自Tm3+的1G4→3H6跃迁;在650 nm左右有一弱发射峰,来自Tm3+的1G4→3H4跃迁。另外,还有一较弱的带状发射,中心位于540 nm左右,来自样品的VO3-4离子的宽带发射。随着Tm3+摩尔分数x由0.001增加到0.005,Tm3+发射光谱强度逐渐增加到最大值。之后随着x继续增加,发射光谱强度逐渐下降,呈现明显的浓度猝灭现象。通过对YVO4∶xTm的光谱分析及其发光机理进行推导,认为YVO4∶Tm3+在紫外及真空紫外激发下,是一种具有较高发光效率以及色纯度较好的蓝色发光材料。     

MCeO3：Eu^3＋（M=Sr，Ba）的合成及发光性质研究

利用高温固相反应法合成了Eu^3＋掺杂的MCeO3（M=Sr，Ba）发光粉末样品，采用X射线衍射技术和荧光光谱等测试手段分别对其物相组成和发光性质进行了研究。X射线衍射结果显示，Eu^3＋离子容易替代MCeO3晶格中M^2＋离子的位置。荧光光谱测试结果表明，Eu^3＋掺杂的SrCeO3和BaCeO3样品在紫外波段存在着非常宽的吸收带，峰值分别位于311和320nm左右，它们属于Ce^4＋-O^2-的电荷迁移带，SrCeO3和BaCeO3基质与Eu^3＋离子之间存在着能量转移。在MCeO3：Eu^3＋样品中，Eu^3＋的发射主要来自于^5D0激发态能级，其中以磁偶极跃迁^5D0-^7F1发射强度为最大；此外样品中还存在着较高的^5D1激发态能级的辐射跃迁。SrCe03：EU^3＋样品的发射强度远大于BaCeO3：EU^3＋样品。     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Etude par diffraction neutronique des solutions solides K1−xBixF1+2xetRb1−xBixF1+2x

Bragg neutron diffraction studies have been carried out on the fluorite type solid solutions K_1?xBi_xF_1+2x (0.50 ? × ? 0.70) and Rb_1?xBi_xF_1+2x (0.50 ? × ? 0.60). The distribution of the fluorine atoms between normal and interstitial sites is given as a function of substitution rate. A substition mechanism is proposed. Electrical and NMR results on one side and structural data on the other side are correlated. A study of the background as a function of temperature has allowed to determine the static origin of its modulation. By inelastic neutron diffusion, it has been shown that the number of carriers is weak, which involves a high mobility.     

E.P.R. in GdxCeyLa1−x−yBe13 and GdxCe−xBe13 intermetallics with high electron lattice relaxation

The bottleneck effect arising in the electron paramagnetic resonance of Gd in GdBe₁₃ and Gd_xCe_-xBe₁₃ with x ? 0.001 is removed by additions of CeBe₁₃ which displays a high electron lattice relaxation rate, tentatively attributed to an interconfiguration fluctuation of the 4f electron of Ce.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.