Efficient Phosphorescent Organic Light Emitting Diodes Using FITCNQ as the Indium-Tin-Oxide Modification Layer

A phosphorescent organic light emitting diode by using tetrafluorotetracyanoquinodimethane （F4 TCNQ） as the indium-tin-oxide modification layer and 4,4＇-bis（earbazol-9-yl）biphenyl （CBP） as the hole transporting layer is reported. CBP doped with a green phosphorescent dopant, tris（2-（p-tolyl）pyridine） iridium（III） （Ir（mppy）3） is used as the emission layer in this device, and the maximum current efficiency of 31.3 cd/A is achieved. Further- more, low efficiency roll-off of 10.4% is observed with device luminance increasing from 100 cd/m2 （29. 7 cd/A） to lO000 cd/m2 （26.5 cd/A）. It is demonstrated that a charge-generation area is formed at F4 TCNQ/CBP interface, which will benefit hole injection into the hole transporting layer. Moreover, use of the CBP hole transporting layer will benefit the low efficiency roll-off by broadening triplet exciton formation, as well as by avoiding accumulation of unbalanced carrier at the hole transporting layer/emission layer interface.     

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.     

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.     

White Organic Light-Emitting Devices Based on 2-（2-Hydroxyphenyl） Benzothiazole and Its Chelate Metal Complex

We present three kinds of organic light-emitting devices (OLED) fabricated to achieve the emission of bright and pure white light. Device A, with a double-layered structure using 2-(2-hydroxyphenyl) benzothiazole (HBT) and poly (N-vinylcarbazole) (PVK) as the emitting layer (EML) and the hole transport layer (HTL) respectively, could realize the blue-green light emission. Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2), synthesized with zinc acetate dihydrate and HBT to form a complex, is used as main EMLs in a similar structure to fabricate devices B and C. Bright and pure white light emissions can be obtained from device C which was fabricated with a green-white emitting host Zn(BTZ)2 and red dopant 5,6,11,12-tetraphenylnaphthacene (rubrene). The maximum quantum efficiency of device C could reach 0.63%, and the corresponding brightness and CIE coordinates were 4000cd/m^2 and (x=0.341, y=0.334) at the driving voltage of 20V.     

Organic Light Emitting Diodes Using Doped Alq3 as the Hole-transport Layer

Effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4TCNQ） doping on the hole conductivity of Alq3 layer are measured. In the hole-only device of Alq3, the current densities increase in 1-3 orders of magnitude upon doping with F4TCNQ, suggesting that the doping can effectively enhance the hole-injection and hole- transport ability of Alq3. An organic light-emitting device using an F4TCNQ doped Alq3 layer as the hole- injection and hole-transport layer, and pristine Alq3 as the electron-transport and emitting layer is fabricated and characterized. Bright emission is achieved in the simple OLED with p-doped Alq3 as the hole-transport layer and the intrinsic Alq3 as the electron-transport and emitting layer. The emitting efficiency and brightness of the device are further improved by inserting a thin electron block layer to confine the carrier recombination zone in the middle of the organic layers.     

Doping in the Mixed Layer to Achieve High Brightness and Efficiency Organic Light Emitting Devices

Doping in the mixed layer was introduced to fabricate high brightness and high efficiency organic light emitting devices.In these devices,a copper phthalocyanine(CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layer and a tris(8-hydroxyquinolinolate) aluminium (Alq3) film as the electron transport layer.The luminescent layer consists of the mixture of NPB,Alq3( to be called the mixed layer),and an emitting dopant 5,6,11,12-petraphenylnaphthacene (rubrene),where the concentration of NPB declined and the concentration of Alq3 was increased gradually in the deposition process.Adopting this doping mixed layer,the device exhibits the maximum emission of 49300cd/m^2 at 35V and the maximum efficiency of 7.96cd/A at 10.5V,which have been improved by two times in comparison with conventional doped devices.We attribute this improvement to the effective confinement of carriers in the mixed layer,which leads to the increase of the recombination efficiency of carriers.     

Tandem white organic light-emitting diodes adopting a C60：rubrene charge generation layerTandem white organic light-emitting diodes adopting a C60：rubrene charge generation layer

Organic bulk heterojunction fullerence （C60） doped 5, 6, 11, 12-tetraphenylnaphthacene （rubrene） as the high quality charge generation layer （CGL） with high transparency and superior charge generating capability for tandem organic light emitting diodes （OLEDs） is developed. This CGL shows excellent optical transparency about 90%, which can reduce the optical interference effect formed in tandem OLEDs. There is a stable white light emission including 468 nm and 500 nm peaks from the blue emitting layer and 620 nm peak from the red emitting layer in tandem white OLEDs. A high efficiency of about 17.4 cd/A and CIE coordinates of （0.40, 0.35） at 100 cd/m2 and （0.36, 0.34） at 1000 cd/m2 have been demonstrated by employing the developed CGL, respectively.     

Tandem white organic light-emitting diodes adopting a C60：rubrene charge generation layer

Organic bulk heterojunction fullerence(C60) doped 5, 6, 11, 12-tetraphenylnaphthacene(rubrene) as the high quality charge generation layer(CGL) with high transparency and superior charge generating capability for tandem organic light emitting diodes(OLEDs) is developed. This CGL shows excellent optical transparency about 90%, which can reduce the optical interference effect formed in tandem OLEDs. There is a stable white light emission including 468 nm and 500 nm peaks from the blue emitting layer and 620 nm peak from the red emitting layer in tandem white OLEDs. A high efficiency of about 17.4 cd/A and CIE coordinates of(0.40, 0.35) at 100 cd/m2 and(0.36, 0.34) at 1000 cd/m2 have been demonstrated by employing the developed CGL, respectively.     

Efficient collinear frequency tripling of femtosecond laser with compensation of group velocity delay

This paper demonstrates an approach that negative uniaxial crystal has a relative anomalous dispersion effect which can compensate group velocity delay, and applies this approach to nonlinear frequency conversion of an ultrafast laser field. High efficiency of the third harmonic generation is experimentally fulfilled by adopting a collinear configuration of doubing-compensation-tripling system. Through finely adjusting the incident angle and optical axis direction of the compensation plate, it obtains ultraviolet (UV) output energy of 0.32~mJ centered at 270~nm with spectral bandwidth of 2~nm when input beam at 800~nm was 70~fs pulse duration and 6~mJ pulse energy which was extracted from Ti:sapphire laser system by a diaphragm, corresponding to an 800-to-270~nm conversion efficiency of 5.3% and a factor-of-1.6 improvement in the third harmonic generation of UV band in comparison with a general conventional configuration. Furthermore, when the full energy of 18~mJ from a Ti:sapphire laser system was used and optimized, the UV emission could reach 0.83~mJ.     

Enhanced Brightness of Eu^3＋ Complex in Organinc Electroluminescent Devices by Using Another Rare—Earth Ion

Rare-earth ions Tb^3 and La^3 were used as a bridge to improve the energy transfer from the polymer to an Eu complex.The material Tb(La)0.5Eu0.5(BSA)3 phen was synthesized and used as the emission layer in the device:ITO/PVK:Tb(La)0.5Eu0.5(BSA)3phen/Alq/Al.The two device were compared in detail and it was found that the device using La0.5Eu0.5(BSA)3phen as the emission material had better monochromatic characteristics with the maximal brightness of 102 ca/m^2 and the colour coordinates x=0.55 and y=0.36.     

Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes(UV OLEDs) using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer(EML) and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.     

BCP对红色有机电致磷光器件效率的影响

使用R-4B作为磷光掺杂剂,CBP为主体,制作以BCP调节载流子复合的红色磷光器件,器件结构ITO/MoO₃(30)/NPB(40)/TCTA(10)/CBP:R-4B(6%)(15)/BCP(x)/CBP:R-4B(6%)(15)/BCP(10)/Alq₃(40)/LiF/Al, 其中x为BCP的厚度,对五种不同厚度的器件和一个对MoO₃优化好且不加BCP的对比器件,来研究它们的发光性能和效率。实验表明：对于面积为1.18 cm2的器件,BCP为4 nm, MoO₃在30 nm时,它的性能达到了最佳,启亮电压为4 V,最大效率为18.9 cd·A-1,其对应的EL主峰位于612 nm, 色坐标为(0.643,0.353), 得到了稳定高效的红色磷光OLED器件。     

3DTAPBP的双分子激发态——电致激基缔合物和激基复合物

研究了苯胺类化合物3DTAPBP(2,2’-二(3-二对甲苯基氨基苯基)联苯)的双分子激发态。首先,制备了3DTAPBP的单层有机发光二极管(OLED)：ITO/MoO₃/3DTAPBP/LiF/Al,其电致发光光谱中不仅含有3DTAPBP的单体激子发光(中心波长约420 nm,蓝光),还观察到电致激基缔合物的发光(峰值为578 nm, 黄光)。由单体发光和电致激基缔合物发光可以混合得到白光,如：7.0 V电压下,3DTAPBP的单层器件的色坐标为(0.36, 0.31),器件结构非常简单。不过由于单层器件中载流子注入和传输的严重不平衡,亮度和效率极低。此外,在3DTAPBP与电子传输材料TPBi(1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)构成的双层器件(ITO/MoO₃/3DTAPBP/TPBi/LiF/Al)中,由于载流子在界面处的堆积,观察到3DTAPBP/TPBi界面处形成激基复合物发光(中心波长约490 nm),对应光子的能量和3DTAPBP与TPBi的HOMO(最高占有轨道)-LUMO(最低未占有轨道)能级差基本吻合。对双层器件的电致发光光谱进行洛伦兹分解拟合,发现随着电压的增加,激基复合物发光减弱,原因是更多的载流子越过3DTAPBP/TPBi界面势垒,相应的3DTAPBP的单体激子发光逐渐增强。4,6和8 V驱动电压下,双层器件的色坐标分别为(0.28, 0.35),(0.24, 0.29)和(0.27, 0.28),随着驱动电压的增大,发光颜色逐渐趋于白色。双层器件的最高亮度和最大电流效率分别达1 349.2 cd·m-2,1.22 cd·A-1。     

荧光染料掺杂的高效率、高亮度白色有机电致发光器件

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm,x%）/Bphen（30 nm）/Cs₂CO₃：Ag₂O（2 nm,20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（x=5,10,15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m²。当驱动电压从4 V增加到9 V时,色坐标从（0.36,0.38）变化为（0.27,0.29）,均处于白光区域。     

Ce3+-冠醚配合物的紫外有机电致发光

采用5d-4f跃迁的稀土Ce³⁺-冠醚配合物(Ce-二环己基并-18-冠-6,Ce-DC18C6)作为发光掺杂剂,4,4'-二(9-咔唑基)联苯(CBP)为基质,设计制备了紫外发光器件:ITO/CuPc/Ce-DC18C6:CBP/Bu-PBD/LiF/Al,首次观测到峰位于376nm的Ce³⁺离子的紫外电致发光。通过对比器件的EL谱与Ce³⁺-冠醚配合物薄膜的PL谱发现,EL光谱中有部分来自Ce³⁺配合物中的Ce³⁺离子的。这种5d-4f电子跃迁的掺杂质量分数为3%时,该UV-发光器件的最大辐射功率为13μW/cm²。     

NPB:CBP复合空穴传输层对黄色有机电致发光器件的影响

采用N, N'-diphenyl-N, N'-bis(1-naphthyl-pheny1)-1, 1'-biphenyl-4, 4'-diamine (NPB):4, 4'-N, N'-dicarbazole-biphenyl (CBP) 掺杂体系为复合空穴传输层,制备了结构为indium-tin oxide (ITO)/NPB:CBP/CBP:bis iridium (acetylacetonate) /2, 9-dimethyl-4, 7-diphenyl-p 关键词： 有机电致发光器件(OLEDs) 复合空穴传输层 NPB:CBP 器件性能     

有机微腔绿色发光二极管

光学微腔是指尺寸在光波长量级的光学微型谐振腔。微腔结构可以使腔内物质和光场的相互作用与体材料相比发生很大变化,出现了自发辐射谱线窄化和增强等腔效应。利用这些腔效应,可以改善有机发光器件的性能。采用微腔结构,优化设计并研制了有机微腔绿色发光二极管,器件结构为Glass/DBR/ITO/NPB/Alq∶Rubrene/Alq/MgAg,获得了最大亮度40100 cd/m2、最大发光效率为6.44 cd/A、半峰全宽为28 nm的纯绿色有机微腔电致发光器件。而与之比较的无腔器件最大亮度为22580 cd/m2、最大发光效率为2.98 cd/A、半峰全宽为120 nm。相同电流密度下微腔电致发光谱的峰值发射强度是无腔器件的4.2倍。结果表明将微腔结构引入有机电致发光器件中,不但改善了发光的色纯度,而且使器件的发光效率和亮度都得到明显增强。     

Organic LED device based on PtOEP phosphor without doping in host material

Electroluminescence (EL) and photoluminescence (PL) have been studied on multi-layer organic light-emitting diode (OLED) devices based on phosphorescent platinum octaethyl porphine (PtOEP) molecule. A multi-layer OLED (called Pt5) which has 100% PtOEP without doping in host as the emitting layer is investigated and compared its EL and PL characteristics with those of the other OLEDs (Pt2 and Pt3) with emitting layer of PtOEP doped in 4,4′-N,N′-dicarbazole-biphenyl (CBP) host material. It is observed that Pt5 shows a lower EL efficiency than Pt2 and Pt3. Three broad EL bands are observed at 500, 527 and 570 nm in the multi-layer device in addition to red sharp EL band due to PtOEP in Pt5, while only the red PtOEP EL is observed in Pt2 and Pt3. The 500, 527 and 570 nm EL peaks arise from absorption of the broad 525 nm Alq₃ emission band by PtOEP layer. The emission from the Alq₃ electron-transport layer is caused by the carrier leakage from the hole-blocking BAlq layer. The intensity of red EL due to PtOEP is much weaker in Pt5 than in Pt2. Taking into account the result of PL, it is suggested that highly efficient energy transfer from CBP host to PtOEP guest occurs in Pt2 and Pt3, giving rise to higher PtOEP luminance, while concentration quenching occurs in PtOEP layer in Pt5.     

铜配合物的光物理与电致发光性能

以中心原子为铜的磷光材料Cu4(C≡Cph)4L2[L=1，8-bis(diphenylphosphino)-3，6-dioxaoctane](简称Cu4)作为掺杂材料，选用空穴传输材料聚乙烯基咔唑(PVK)为母体材料，制作结构为ITO／Cu4PVK／TAZ／Mg：Ag／Ag的双层器件。其发光颜色随掺杂的变化而改变，在较高掺杂浓度的条件下，可观察到单纯Cu4的发光，即实现了单重态到三重态的能量转移。着重讨论了主客体材料间的能量转移过程，并研究了影响器件效率的外界因素如氧气的猝灭对Cu4发光强度的影响。