Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors |
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引用本文: | 李冲,薛春来,刘智,成步文,李传波,王启明.Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors[J].中国物理 B,2014(3):640-644. |
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作者姓名: | 李冲 薛春来 刘智 成步文 李传波 王启明 |
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摘 要: | We report efficient zero-bias high-speed top-illuminated p-i-n photodiodes (PDs) with high responsivity fabricated with germanium (Ge) films grown directly on silicon-on-insulator (SOI) substrates. For a 15 p-m-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at -1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-p.m-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.
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关 键 词: | 光电探测器 反向偏压 高带宽 高响应 锗 光电二极管 载流子收集 电流密度 |
Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors |
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Abstract: | germanium, photodetectors, integrated optoelectronics, optical interconnections |
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Keywords: | germanium photodetectors integrated optoelectronics optical interconnections |
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