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101.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
102.
Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10-9 bit error rate (BER) 相似文献
103.
C. Fallnich B. Ruffing Th. Herrmann A. Nebel R. Beigang R. Wallenstein 《Applied physics. B, Lasers and optics》1995,60(5):427-436
We report on a cw mode-locked non-critically phase matched KTP optical parametric oscillator synchronously pumped by a picosecond Ti:Sapphire laser. High average signal output power of up to 950 mW over a large tuning range has been achieved. For this OPO the influence of resonator-length detuning on the output power, pulse duration and spectral bandwidth has been investigated. The measured data are in good agreement with the results of a numerical simulation using a split-step Fourier method which considers the group-velocity mismatch, the group-velocity dispersion and the self-phase modulation. The numerical simulation also describes the measured strong pump depletion and its influence on the OPO output and efficiency. 相似文献
104.
105.
NaY zeolite samples loaded with sodium metal by vapor phase deposition have been investigated using129Xe NMR spectroscopy. At low sodium concentration, the129Xe NMR spectrum showed three resonance lines which clearly indicate the existence of distinct domains in the zeolite sample. Such an observation suggests that the diffusion of the xenon atoms into each domain only occurs with respect to the NMR time scale (2.9 ms). As the sodium concentration increases, observation of a single broad line indicate a macroscopic homogenization of the system. The shift of this line is explained in part due to a paramagnetic interaction between the xenon atoms and the unpaired electrons of particles containing an odd number of sodium atoms. The linewidth is due to the distribution of the local magnetic fields partially averaged by the rapid motion of the xenon atoms and to the statistical distribution of the sodium particles in the supercage cavities. The paramagnetic interaction vanishes with the oxidation of the sample leading to a narrowing and a shift of the line to higher magnetic fields. 相似文献
106.
Zhengmao Ye Campbell J.C. Zhonghui Chen Eui-Tae Kim Madhukar A. 《Quantum Electronics, IEEE Journal of》2002,38(9):1234-1237
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. 相似文献
107.
108.
In this paper we consider a wavelet algorithm for the piecewise constant collocation method applied to the boundary element solution of a first kind integral equation arising in acoustic scattering. The conventional stiffness matrix is transformed into the corresponding matrix with respect to wavelet bases, and it is approximated by a compressed matrix. Finally, the stiffness matrix is multiplied by diagonal preconditioners such that the resulting matrix of the system of linear equations is well conditioned and sparse. Using this matrix, the boundary integral equation can be solved effectively. 相似文献
109.
Accuracy of approximations in MOSFET charge models 总被引:2,自引:0,他引:2
This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem 相似文献
110.
The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described 相似文献